CN110419093B - 通过改善氧化硅的成核/粘附来改善膜粗糙度的处理方法 - Google Patents

通过改善氧化硅的成核/粘附来改善膜粗糙度的处理方法 Download PDF

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CN110419093B
CN110419093B CN201880017633.XA CN201880017633A CN110419093B CN 110419093 B CN110419093 B CN 110419093B CN 201880017633 A CN201880017633 A CN 201880017633A CN 110419093 B CN110419093 B CN 110419093B
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substrate
amorphous silicon
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silicon layer
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CN110419093A (zh
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程睿
A·B·玛里克
陈一宏
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Applied Materials Inc
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Applied Materials Inc
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    • H10P76/408Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
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    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326Deposition processes
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  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
CN201880017633.XA 2017-04-07 2018-03-21 通过改善氧化硅的成核/粘附来改善膜粗糙度的处理方法 Active CN110419093B (zh)

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US201762482872P 2017-04-07 2017-04-07
US62/482,872 2017-04-07
PCT/US2018/023474 WO2018187034A1 (en) 2017-04-07 2018-03-21 Treatment approach to improve film roughness by improving nucleation/adhesion of silicon oxide

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CN110419093A CN110419093A (zh) 2019-11-05
CN110419093B true CN110419093B (zh) 2023-12-01

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US (1) US10276379B2 (https=)
JP (1) JP7194116B2 (https=)
KR (1) KR102492223B1 (https=)
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WO (1) WO2018187034A1 (https=)

Families Citing this family (7)

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Publication number Priority date Publication date Assignee Title
KR102509390B1 (ko) * 2017-07-24 2023-03-14 어플라이드 머티어리얼스, 인코포레이티드 산화규소 상의 초박형 비정질 규소 막의 연속성을 개선하기 위한 전처리 접근법
KR20190035036A (ko) * 2017-09-25 2019-04-03 삼성전자주식회사 박막 형성 장치 및 이를 이용한 비정질 실리콘 막 형성방법
KR102578827B1 (ko) * 2018-04-24 2023-09-15 삼성전자주식회사 유연한 유무기 보호막 및 그 제조방법
JP7627432B2 (ja) * 2019-12-10 2025-02-06 東京エレクトロン株式会社 犠牲キャッピング層としての自己組織化単分子層
US20210327891A1 (en) * 2020-04-16 2021-10-21 Applied Materials, Inc. Stack for 3d-nand memory cell
US11640905B2 (en) * 2020-12-17 2023-05-02 Applied Materials, Inc. Plasma enhanced deposition of silicon-containing films at low temperature
KR20250129178A (ko) 2024-02-22 2025-08-29 세메스 주식회사 기판 처리 방법 및 시스템

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5273920A (en) * 1992-09-02 1993-12-28 General Electric Company Method of fabricating a thin film transistor using hydrogen plasma treatment of the gate dielectric/semiconductor layer interface
JPH07252657A (ja) * 1994-03-16 1995-10-03 Mitsubishi Heavy Ind Ltd 成膜方法
JP2000031058A (ja) * 1998-07-16 2000-01-28 Ulvac Corp アモルファスシリコン薄膜製造方法
CN1707748A (zh) * 2005-04-20 2005-12-14 中山大学 一种制作硅纳米线二极管结构场发射器件的方法
JP2008192724A (ja) * 2007-02-02 2008-08-21 Konica Minolta Holdings Inc 有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法
CN102205942A (zh) * 2011-05-13 2011-10-05 上海集成电路研发中心有限公司 Mems牺牲层结构制造方法
CN103700576A (zh) * 2013-12-17 2014-04-02 西安文理学院 一种自组装形成尺寸可控的硅纳米晶薄膜的制备方法
US9484202B1 (en) * 2015-06-03 2016-11-01 Applied Materials, Inc. Apparatus and methods for spacer deposition and selective removal in an advanced patterning process

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3181357B2 (ja) 1991-08-19 2001-07-03 株式会社東芝 半導体薄膜の形成方法および半導体装置の製造方法
JPH05160394A (ja) * 1991-10-11 1993-06-25 Sony Corp Mis型半導体装置及びその製造方法
US5800878A (en) 1996-10-24 1998-09-01 Applied Materials, Inc. Reducing hydrogen concentration in pecvd amorphous silicon carbide films
US6391785B1 (en) 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US6939794B2 (en) 2003-06-17 2005-09-06 Micron Technology, Inc. Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device
US7651955B2 (en) * 2005-06-21 2010-01-26 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US7662718B2 (en) 2006-03-09 2010-02-16 Micron Technology, Inc. Trim process for critical dimension control for integrated circuits
US7485572B2 (en) 2006-09-25 2009-02-03 International Business Machines Corporation Method for improved formation of cobalt silicide contacts in semiconductor devices
US7622386B2 (en) 2006-12-06 2009-11-24 International Business Machines Corporation Method for improved formation of nickel silicide contacts in semiconductor devices
US20080254619A1 (en) 2007-04-14 2008-10-16 Tsang-Jung Lin Method of fabricating a semiconductor device
KR20090013286A (ko) 2007-08-01 2009-02-05 삼성전자주식회사 반도체 소자 제조설비
US7709396B2 (en) 2008-09-19 2010-05-04 Applied Materials, Inc. Integral patterning of large features along with array using spacer mask patterning process flow
US8525139B2 (en) 2009-10-27 2013-09-03 Lam Research Corporation Method and apparatus of halogen removal
US8247332B2 (en) 2009-12-04 2012-08-21 Novellus Systems, Inc. Hardmask materials
US8178443B2 (en) 2009-12-04 2012-05-15 Novellus Systems, Inc. Hardmask materials
KR20110064661A (ko) 2009-12-08 2011-06-15 삼성전자주식회사 반도체소자의 제조방법
US20110244142A1 (en) 2010-03-30 2011-10-06 Applied Materials, Inc. Nitrogen doped amorphous carbon hardmask
TW201216331A (en) 2010-10-05 2012-04-16 Applied Materials Inc Ultra high selectivity doped amorphous carbon strippable hardmask development and integration
US20120202315A1 (en) 2011-02-03 2012-08-09 Applied Materials, Inc. In-situ hydrogen plasma treatment of amorphous silicon intrinsic layers
US20130189845A1 (en) * 2012-01-19 2013-07-25 Applied Materials, Inc. Conformal amorphous carbon for spacer and spacer protection applications
US20130196078A1 (en) 2012-01-31 2013-08-01 Joseph Yudovsky Multi-Chamber Substrate Processing System
EP2674996A1 (en) * 2012-06-15 2013-12-18 Imec VZW Method for growing nanostructures in recessed structures
CN104603914B (zh) 2012-09-07 2017-07-14 应用材料公司 多腔室真空系统中的多孔电介质、聚合物涂布基板和环氧化物的集成处理
GB201218697D0 (en) 2012-10-18 2012-11-28 Spts Technologies Ltd A method of depositing an amorphous silicon film
TW201441408A (zh) 2013-03-15 2014-11-01 應用材料股份有限公司 包含氮化矽之膜的電漿輔助原子層沉積
US9171754B2 (en) 2013-05-24 2015-10-27 Globalfoundries Inc. Method including an etching of a portion of an interlayer dielectric in a semiconductor structure, a degas process and a preclean process
US9412656B2 (en) 2014-02-14 2016-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Reverse tone self-aligned contact
JP2016047777A (ja) * 2014-08-27 2016-04-07 国立大学法人大阪大学 グラフェン薄膜の製造方法、並びにグラフェン薄膜を備えた電子素子およびセンサ
US9997373B2 (en) * 2014-12-04 2018-06-12 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US9865459B2 (en) 2015-04-22 2018-01-09 Applied Materials, Inc. Plasma treatment to improve adhesion between hardmask film and silicon oxide film
US9829790B2 (en) * 2015-06-08 2017-11-28 Applied Materials, Inc. Immersion field guided exposure and post-exposure bake process
US10418243B2 (en) 2015-10-09 2019-09-17 Applied Materials, Inc. Ultra-high modulus and etch selectivity boron-carbon hardmask films
TWI715645B (zh) 2015-10-22 2021-01-11 美商應用材料股份有限公司 正形及縫隙填充非晶矽薄膜的沉積

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5273920A (en) * 1992-09-02 1993-12-28 General Electric Company Method of fabricating a thin film transistor using hydrogen plasma treatment of the gate dielectric/semiconductor layer interface
JPH07252657A (ja) * 1994-03-16 1995-10-03 Mitsubishi Heavy Ind Ltd 成膜方法
JP2000031058A (ja) * 1998-07-16 2000-01-28 Ulvac Corp アモルファスシリコン薄膜製造方法
CN1707748A (zh) * 2005-04-20 2005-12-14 中山大学 一种制作硅纳米线二极管结构场发射器件的方法
JP2008192724A (ja) * 2007-02-02 2008-08-21 Konica Minolta Holdings Inc 有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法
CN102205942A (zh) * 2011-05-13 2011-10-05 上海集成电路研发中心有限公司 Mems牺牲层结构制造方法
CN103700576A (zh) * 2013-12-17 2014-04-02 西安文理学院 一种自组装形成尺寸可控的硅纳米晶薄膜的制备方法
US9484202B1 (en) * 2015-06-03 2016-11-01 Applied Materials, Inc. Apparatus and methods for spacer deposition and selective removal in an advanced patterning process

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