KR102492223B1 - 실리콘 산화물의 핵형성/접착을 개선함으로써 막 조도를 개선하기 위한 처리 접근법 - Google Patents

실리콘 산화물의 핵형성/접착을 개선함으로써 막 조도를 개선하기 위한 처리 접근법 Download PDF

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KR102492223B1
KR102492223B1 KR1020197029137A KR20197029137A KR102492223B1 KR 102492223 B1 KR102492223 B1 KR 102492223B1 KR 1020197029137 A KR1020197029137 A KR 1020197029137A KR 20197029137 A KR20197029137 A KR 20197029137A KR 102492223 B1 KR102492223 B1 KR 102492223B1
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substrate
amorphous silicon
processing chamber
silicon layer
patterned features
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KR20190128668A (ko
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루이 청
아비지트 바수 말릭
이홍 첸
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어플라이드 머티어리얼스, 인코포레이티드
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    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
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    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
KR1020197029137A 2017-04-07 2018-03-21 실리콘 산화물의 핵형성/접착을 개선함으로써 막 조도를 개선하기 위한 처리 접근법 Active KR102492223B1 (ko)

Applications Claiming Priority (3)

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US201762482872P 2017-04-07 2017-04-07
US62/482,872 2017-04-07
PCT/US2018/023474 WO2018187034A1 (en) 2017-04-07 2018-03-21 Treatment approach to improve film roughness by improving nucleation/adhesion of silicon oxide

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KR20190128668A KR20190128668A (ko) 2019-11-18
KR102492223B1 true KR102492223B1 (ko) 2023-01-25

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US (1) US10276379B2 (https=)
JP (1) JP7194116B2 (https=)
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WO (1) WO2018187034A1 (https=)

Cited By (1)

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KR20250129178A (ko) 2024-02-22 2025-08-29 세메스 주식회사 기판 처리 방법 및 시스템

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KR102509390B1 (ko) * 2017-07-24 2023-03-14 어플라이드 머티어리얼스, 인코포레이티드 산화규소 상의 초박형 비정질 규소 막의 연속성을 개선하기 위한 전처리 접근법
KR20190035036A (ko) * 2017-09-25 2019-04-03 삼성전자주식회사 박막 형성 장치 및 이를 이용한 비정질 실리콘 막 형성방법
KR102578827B1 (ko) * 2018-04-24 2023-09-15 삼성전자주식회사 유연한 유무기 보호막 및 그 제조방법
JP7627432B2 (ja) * 2019-12-10 2025-02-06 東京エレクトロン株式会社 犠牲キャッピング層としての自己組織化単分子層
US20210327891A1 (en) * 2020-04-16 2021-10-21 Applied Materials, Inc. Stack for 3d-nand memory cell
US11640905B2 (en) * 2020-12-17 2023-05-02 Applied Materials, Inc. Plasma enhanced deposition of silicon-containing films at low temperature

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