JP7194116B2 - 酸化ケイ素の核形成/接着の向上により膜粗さを改善するための処理アプローチ - Google Patents
酸化ケイ素の核形成/接着の向上により膜粗さを改善するための処理アプローチ Download PDFInfo
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- JP7194116B2 JP7194116B2 JP2019554823A JP2019554823A JP7194116B2 JP 7194116 B2 JP7194116 B2 JP 7194116B2 JP 2019554823 A JP2019554823 A JP 2019554823A JP 2019554823 A JP2019554823 A JP 2019554823A JP 7194116 B2 JP7194116 B2 JP 7194116B2
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 17
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- 239000012071 phase Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- NSETWVJZUWGCKE-UHFFFAOYSA-N propylphosphonic acid Chemical compound CCCP(O)(O)=O NSETWVJZUWGCKE-UHFFFAOYSA-N 0.000 description 1
- 239000005053 propyltrichlorosilane Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- VIFIHLXNOOCGLJ-UHFFFAOYSA-N trichloro(3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecyl)silane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CC[Si](Cl)(Cl)Cl VIFIHLXNOOCGLJ-UHFFFAOYSA-N 0.000 description 1
- HLWCOIUDOLYBGD-UHFFFAOYSA-N trichloro(decyl)silane Chemical compound CCCCCCCCCC[Si](Cl)(Cl)Cl HLWCOIUDOLYBGD-UHFFFAOYSA-N 0.000 description 1
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- ZOYFEXPFPVDYIS-UHFFFAOYSA-N trichloro(ethyl)silane Chemical compound CC[Si](Cl)(Cl)Cl ZOYFEXPFPVDYIS-UHFFFAOYSA-N 0.000 description 1
- RFMOODUJRPZGFS-UHFFFAOYSA-N trichloro(heptadecyl)silane Chemical compound CCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl RFMOODUJRPZGFS-UHFFFAOYSA-N 0.000 description 1
- SRQHGWJPIZXDTA-UHFFFAOYSA-N trichloro(heptyl)silane Chemical compound CCCCCCC[Si](Cl)(Cl)Cl SRQHGWJPIZXDTA-UHFFFAOYSA-N 0.000 description 1
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- LFXJGGDONSCPOF-UHFFFAOYSA-N trichloro(hexyl)silane Chemical compound CCCCCC[Si](Cl)(Cl)Cl LFXJGGDONSCPOF-UHFFFAOYSA-N 0.000 description 1
- UWUKCFJDVNCGML-UHFFFAOYSA-N trichloro(nonadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl UWUKCFJDVNCGML-UHFFFAOYSA-N 0.000 description 1
- SSBOTKQTCWQWMG-UHFFFAOYSA-N trichloro(nonyl)silane Chemical compound CCCCCCCCC[Si](Cl)(Cl)Cl SSBOTKQTCWQWMG-UHFFFAOYSA-N 0.000 description 1
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 description 1
- RCHUVCPBWWSUMC-UHFFFAOYSA-N trichloro(octyl)silane Chemical compound CCCCCCCC[Si](Cl)(Cl)Cl RCHUVCPBWWSUMC-UHFFFAOYSA-N 0.000 description 1
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- LPMVYGAHBSNGHP-UHFFFAOYSA-N trichloro(tetradecyl)silane Chemical compound CCCCCCCCCCCCCC[Si](Cl)(Cl)Cl LPMVYGAHBSNGHP-UHFFFAOYSA-N 0.000 description 1
- WLWBNHYYFCNHRR-UHFFFAOYSA-N trichloro(tridecyl)silane Chemical compound CCCCCCCCCCCCC[Si](Cl)(Cl)Cl WLWBNHYYFCNHRR-UHFFFAOYSA-N 0.000 description 1
- AHEMBBKAVCEZKE-UHFFFAOYSA-N trichloro(undecyl)silane Chemical compound CCCCCCCCCCC[Si](Cl)(Cl)Cl AHEMBBKAVCEZKE-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
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- SAWDTKLQESXBDN-UHFFFAOYSA-N triethoxy(heptyl)silane Chemical compound CCCCCCC[Si](OCC)(OCC)OCC SAWDTKLQESXBDN-UHFFFAOYSA-N 0.000 description 1
- OYGYKEULCAINCL-UHFFFAOYSA-N triethoxy(hexadecyl)silane Chemical compound CCCCCCCCCCCCCCCC[Si](OCC)(OCC)OCC OYGYKEULCAINCL-UHFFFAOYSA-N 0.000 description 1
- WUMSTCDLAYQDNO-UHFFFAOYSA-N triethoxy(hexyl)silane Chemical compound CCCCCC[Si](OCC)(OCC)OCC WUMSTCDLAYQDNO-UHFFFAOYSA-N 0.000 description 1
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- FZMJEGJVKFTGMU-UHFFFAOYSA-N triethoxy(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OCC)(OCC)OCC FZMJEGJVKFTGMU-UHFFFAOYSA-N 0.000 description 1
- ZJLGWINGXOQWDC-UHFFFAOYSA-N triethoxy(pentadecyl)silane Chemical compound CCCCCCCCCCCCCCC[Si](OCC)(OCC)OCC ZJLGWINGXOQWDC-UHFFFAOYSA-N 0.000 description 1
- FHVAUDREWWXPRW-UHFFFAOYSA-N triethoxy(pentyl)silane Chemical compound CCCCC[Si](OCC)(OCC)OCC FHVAUDREWWXPRW-UHFFFAOYSA-N 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- SVKDNKCAGJVMMY-UHFFFAOYSA-N triethoxy(tetradecyl)silane Chemical compound CCCCCCCCCCCCCC[Si](OCC)(OCC)OCC SVKDNKCAGJVMMY-UHFFFAOYSA-N 0.000 description 1
- IMAMKGXMSYGEGR-UHFFFAOYSA-N triethoxy(tridecyl)silane Chemical compound CCCCCCCCCCCCC[Si](OCC)(OCC)OCC IMAMKGXMSYGEGR-UHFFFAOYSA-N 0.000 description 1
- BBWMWJONYVGXGQ-UHFFFAOYSA-N triethoxy(undecyl)silane Chemical compound CCCCCCCCCCC[Si](OCC)(OCC)OCC BBWMWJONYVGXGQ-UHFFFAOYSA-N 0.000 description 1
- PPUHSHGIVZSPFO-UHFFFAOYSA-N trimethoxy(nonadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCCC[Si](OC)(OC)OC PPUHSHGIVZSPFO-UHFFFAOYSA-N 0.000 description 1
- JEPXSTGVAHHRBD-UHFFFAOYSA-N trimethoxy(nonyl)silane Chemical compound CCCCCCCCC[Si](OC)(OC)OC JEPXSTGVAHHRBD-UHFFFAOYSA-N 0.000 description 1
- NMEPHPOFYLLFTK-UHFFFAOYSA-N trimethoxy(octyl)silane Chemical compound CCCCCCCC[Si](OC)(OC)OC NMEPHPOFYLLFTK-UHFFFAOYSA-N 0.000 description 1
- LCXXOYOABWDYBF-UHFFFAOYSA-N trimethoxy(pentadecyl)silane Chemical compound CCCCCCCCCCCCCCC[Si](OC)(OC)OC LCXXOYOABWDYBF-UHFFFAOYSA-N 0.000 description 1
- HILHCDFHSDUYNX-UHFFFAOYSA-N trimethoxy(pentyl)silane Chemical compound CCCCC[Si](OC)(OC)OC HILHCDFHSDUYNX-UHFFFAOYSA-N 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- AXNJHBYHBDPTQF-UHFFFAOYSA-N trimethoxy(tetradecyl)silane Chemical compound CCCCCCCCCCCCCC[Si](OC)(OC)OC AXNJHBYHBDPTQF-UHFFFAOYSA-N 0.000 description 1
- QSYYSIXGDAAPNN-UHFFFAOYSA-N trimethoxy(tridecyl)silane Chemical compound CCCCCCCCCCCCC[Si](OC)(OC)OC QSYYSIXGDAAPNN-UHFFFAOYSA-N 0.000 description 1
- LIJFLHYUSJKHKV-UHFFFAOYSA-N trimethoxy(undecyl)silane Chemical compound CCCCCCCCCCC[Si](OC)(OC)OC LIJFLHYUSJKHKV-UHFFFAOYSA-N 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- CCIDWXHLGNEQSL-UHFFFAOYSA-N undecane-1-thiol Chemical compound CCCCCCCCCCCS CCIDWXHLGNEQSL-UHFFFAOYSA-N 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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Description
集積回路は、単一チップ上の数百万ものトランジスタ、コンデンサ、及び抵抗器を含みうる複雑なデバイスへと進化を遂げてきた。チップ設計の進化では、より高速な回路及びより高い回路密度を取り込むことが繰り返されている。より高い回路密度を伴うより高速な回路に対する需要により、かかる集積回路の製造に使用される材料についても、相応の要求が課されている。詳細には、集積回路構成要素の寸法がサブミクロン単位まで小さくなることにより、今では、かかる構成要素から好適な電気的性能を得るために、低抵抗の導電性材料並びに低誘電率の絶縁材料を使用することが必要になっている。しかし、このような低誘電率の絶縁材料は粗さの問題を抱えることが多い。この粗さの問題は、後続堆積される膜の粗さを増大させ、膜同士の接着に影響を与えうる。
Claims (15)
- 処理チャンバ内で基板上にアモルファスシリコン層を形成する方法であって、
基板の上に、所定の厚さの犠牲誘電体層を堆積させることと、
前記犠牲誘電体層を部分的に除去して前記基板の上側表面を露出させることによって、前記基板上に、パターニングされたフィーチャを形成することと、
前記パターニングされたフィーチャ上に自己集合単層(SAM)を形成することと、
前記SAM上及び前記基板の露出した前記上側表面上に、アモルファスシリコン層を堆積させることと、
前記アモルファスシリコン層から形成された側壁スペーサの中が前記パターニングされたフィーチャで満たされているようにするために、異方性エッチングプロセスを使用して、前記パターニングされたフィーチャの上側表面及び前記基板の前記上側表面から前記アモルファスシリコン層を選択的に除去することとを含む、
方法。 - 前記パターニングされたフィーチャ上に前記SAMを形成する前に、前記パターニングされたフィーチャにプラズマ処理を実施することを更に含み、前記プラズマ処理を実施することが、
前記処理チャンバ内へと処理ガスを流すことと、
前記処理チャンバ内でプラズマを生成して、前記基板の前記パターニングされたフィーチャを処理することとを含む、請求項1に記載の方法。 - 前記処理ガスがアルゴンを含む、請求項2に記載の方法。
- 前記処理ガスが、アルゴン、水素、窒素、亜酸化窒素、アンモニア、及びこれらの組み合わせ、のうちの1つを含む、請求項2に記載の方法。
- 前記パターニングされたフィーチャにプラズマ処理を実施することと、前記パターニングされたフィーチャ上及び前記基板の前記露出した上側表面上に前記アモルファスシリコン層を堆積させることが、同じ処理チャンバ内で実施される、請求項1に記載の方法。
- 前記犠牲誘電体層が酸化ケイ素を含む、請求項1に記載の方法。
- 前記パターニングされたフィーチャ上及び前記基板の前記露出した上側表面上に前記アモルファスシリコン層を堆積させることが、前記パターニングされたフィーチャをシリコン前駆体に曝露して、水素を含むアウトガス可能な化学種を有するアモルファスシリコン膜を形成することを含む、請求項1に記載の方法。
- 前記アモルファスシリコン膜から前記アウトガス可能な化学種を除去してガス抜き済みのアモルファスシリコン膜を形成するために、前記アモルファスシリコン膜を不活性ガス抜き環境に曝露することを更に含む、請求項7に記載の方法。
- 前記シリコン前駆体が、ジシラン、トリシラン、テトラシラン、イソテトラシラン、ネオペンタシラン、シクロペンタシラン、ヘキサシラン、シクロヘキサシラン、及びこれらの組み合わせ、のうちの一又は複数を含む、請求項8に記載の方法。
- 前記シリコン前駆体がジシランである、請求項9に記載の方法。
- 前記不活性ガス抜き環境が実質的に不活性ガスで構成されている、請求項8に記載の方法。
- 前記不活性ガスが、アルゴン、ヘリウム、及び窒素のうちの一又は複数を含む、請求項11に記載の方法。
- 前記シリコン前駆体と前記不活性ガス抜き環境のそれぞれへの曝露が、約50mTorr~約200Torrの範囲内の圧力において行われる、請求項12に記載の方法。
- 前記シリコン前駆体と前記不活性ガス抜き環境のそれぞれへの曝露が、摂氏約350度~摂氏約700度の範囲内の温度において行われる、請求項13に記載の方法。
- 前記シリコン前駆体と前記不活性ガス抜き環境へのそれぞれの曝露により、前記ガス抜き済みのアモルファスシリコン膜が、約5Å~約20Åの範囲内の厚さを有するように成長する、請求項14に記載の方法。
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