JP7185510B2 - 中心検出方法 - Google Patents

中心検出方法 Download PDF

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Publication number
JP7185510B2
JP7185510B2 JP2018228008A JP2018228008A JP7185510B2 JP 7185510 B2 JP7185510 B2 JP 7185510B2 JP 2018228008 A JP2018228008 A JP 2018228008A JP 2018228008 A JP2018228008 A JP 2018228008A JP 7185510 B2 JP7185510 B2 JP 7185510B2
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Japan
Prior art keywords
value
line sensor
coordinates
peripheral
axis
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Active
Application number
JP2018228008A
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English (en)
Japanese (ja)
Other versions
JP2020091177A (ja
Inventor
崇史 大森
彩子 小池
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to JP2018228008A priority Critical patent/JP7185510B2/ja
Priority to KR1020190153532A priority patent/KR20200068584A/ko
Priority to CN201911218257.3A priority patent/CN111276412B/zh
Priority to TW108144330A priority patent/TWI824071B/zh
Priority to DE102019218969.5A priority patent/DE102019218969A1/de
Publication of JP2020091177A publication Critical patent/JP2020091177A/ja
Application granted granted Critical
Publication of JP7185510B2 publication Critical patent/JP7185510B2/ja
Active legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/002—Measuring arrangements characterised by the use of optical techniques for measuring two or more coordinates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP2018228008A 2018-12-05 2018-12-05 中心検出方法 Active JP7185510B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018228008A JP7185510B2 (ja) 2018-12-05 2018-12-05 中心検出方法
KR1020190153532A KR20200068584A (ko) 2018-12-05 2019-11-26 중심 검출 방법
CN201911218257.3A CN111276412B (zh) 2018-12-05 2019-12-03 中心检测方法
TW108144330A TWI824071B (zh) 2018-12-05 2019-12-04 中心檢測方法
DE102019218969.5A DE102019218969A1 (de) 2018-12-05 2019-12-05 Zentrumsdetektionsverfahren

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018228008A JP7185510B2 (ja) 2018-12-05 2018-12-05 中心検出方法

Publications (2)

Publication Number Publication Date
JP2020091177A JP2020091177A (ja) 2020-06-11
JP7185510B2 true JP7185510B2 (ja) 2022-12-07

Family

ID=70776525

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018228008A Active JP7185510B2 (ja) 2018-12-05 2018-12-05 中心検出方法

Country Status (4)

Country Link
JP (1) JP7185510B2 (zh)
KR (1) KR20200068584A (zh)
DE (1) DE102019218969A1 (zh)
TW (1) TWI824071B (zh)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002148019A (ja) 2000-11-07 2002-05-22 Yaskawa Electric Corp ウエハのエッジ位置検出方法およびその方法を実行させるプログラムを記録したコンピュータ読み取り可能な記録媒体ならびにウエハのエッジ位置検出装置。
JP2005268530A (ja) 2004-03-18 2005-09-29 Olympus Corp 半導体ウエハのアライメント装置
JP2015133371A (ja) 2014-01-10 2015-07-23 株式会社ディスコ マーク検出方法
JP2018028713A (ja) 2016-08-15 2018-02-22 Ｊｆｅスチール株式会社 二次元画像のエッジ抽出方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006093333A (ja) 2004-09-22 2006-04-06 Disco Abrasive Syst Ltd 切削方法
KR100976316B1 (ko) * 2005-12-06 2010-08-16 시바우라 메카트로닉스 가부시키가이샤 외관 검사 장치
US20090116727A1 (en) * 2006-05-02 2009-05-07 Accretech Usa, Inc. Apparatus and Method for Wafer Edge Defects Detection
WO2008103994A2 (en) * 2007-02-23 2008-08-28 Rudolph Technologies, Inc. Wafer fabrication monitoring systems and methods, including edge bead removal processing
JP5486405B2 (ja) 2010-05-27 2014-05-07 株式会社ディスコ ウェーハの中心位置検出方法
JP6174980B2 (ja) 2013-11-22 2017-08-02 株式会社ディスコ ウェーハの検出方法
US9734568B2 (en) * 2014-02-25 2017-08-15 Kla-Tencor Corporation Automated inline inspection and metrology using shadow-gram images

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002148019A (ja) 2000-11-07 2002-05-22 Yaskawa Electric Corp ウエハのエッジ位置検出方法およびその方法を実行させるプログラムを記録したコンピュータ読み取り可能な記録媒体ならびにウエハのエッジ位置検出装置。
JP2005268530A (ja) 2004-03-18 2005-09-29 Olympus Corp 半導体ウエハのアライメント装置
JP2015133371A (ja) 2014-01-10 2015-07-23 株式会社ディスコ マーク検出方法
JP2018028713A (ja) 2016-08-15 2018-02-22 Ｊｆｅスチール株式会社 二次元画像のエッジ抽出方法

Also Published As

Publication number Publication date
CN111276412A (zh) 2020-06-12
TW202022313A (zh) 2020-06-16
DE102019218969A1 (de) 2020-06-10
KR20200068584A (ko) 2020-06-15
TWI824071B (zh) 2023-12-01
JP2020091177A (ja) 2020-06-11

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