JP7182438B2 - 反射防止膜、反射防止膜の製造方法、及び眼鏡型ディスプレイ - Google Patents
反射防止膜、反射防止膜の製造方法、及び眼鏡型ディスプレイ Download PDFInfo
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- JP7182438B2 JP7182438B2 JP2018222794A JP2018222794A JP7182438B2 JP 7182438 B2 JP7182438 B2 JP 7182438B2 JP 2018222794 A JP2018222794 A JP 2018222794A JP 2018222794 A JP2018222794 A JP 2018222794A JP 7182438 B2 JP7182438 B2 JP 7182438B2
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
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- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
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Description
反射防止膜であって、
支持基材上に、フォトレジスト材料から成り、前記支持基材に近い程寸法と屈折率が大きくなるパターンが形成されているものである反射防止膜を提供する。
反射防止膜の製造方法であって、
支持基材上に、芳香族基を有する高分子化合物とフッ素を有する高分子化合物を含有するフォトレジスト材料をコートし、ベークによって前記フッ素を有する高分子化合物を膜表面に配向させ、その後露光と現像によって前記支持基材に近い程寸法と屈折率が大きくなるパターンを形成する反射防止膜の製造方法を提供する。
支持基材上に、フォトレジスト材料から成り、前記支持基材に近い程寸法と屈折率が大きくなるパターンが形成されているものである反射防止膜である。
本発明では、支持基材上に、フォトレジスト材料から成り、前記支持基材に近い程寸法と屈折率が大きくなるパターンが形成されているものである反射防止膜を提供する。
モスアイパターン13のピッチは可視光の波長よりも小さくすることが好ましい。これによって、モスアイパターン13上での乱反射を防止することが出来る。可視光の中で最も短波長なのは約400nmなので、パターンピッチは400nm以下が好ましく、更に好ましくは300nm以下である。
支持基材は、特に限定されず、モスアイパターンを支持できればよく、下層膜でも、基板でもよい。下層膜は有機膜、無機膜どちらでも構わないし、下層膜を設けずに基板上に直接モスアイパターンを形成しても良いが、下層膜と基板は可視光に高透明であることが好ましい。更には基板と下層膜も高屈折率である方が好ましい。また、支持基材として基板を用いる場合、HMDS(Hexamethyldisilazan)処理した基板を用いることが好ましい。
図2は、モスアイパターン13を低屈折率材料14で覆った本発明の反射防止膜の一例を示す概略断面図である。図2に示されるように、フォトレジストの露光と現像で形成したモスアイパターン13のパターン間を、低屈折率材料14で埋めた反射防止膜111とすることも出来る。モスアイパターン13が倒れてしまうと反射防止効果が低下してしまうので、触ってもモスアイパターン13が倒れないようにするためにもモスアイパターン13の埋め込みは効果的である。
また、本発明では、眼鏡型ディスプレイであって、前記眼鏡型ディスプレイの眼球側の基板上に液晶、有機EL、及びマイクロLEDから選択される自己発光型ディスプレイが設置され、該自己発光型ディスプレイの眼球側に焦点を結ぶための凸レンズが設置され、該凸レンズの表面に前記本発明の反射防止膜が形成されている眼鏡型ディスプレイを提供する。
また、本発明は、反射防止膜の製造方法であって、
支持基材上に、芳香族基を有する高分子化合物とフッ素を有する高分子化合物を含有するフォトレジスト材料をコートし、ベークによって前記フッ素を有する高分子化合物を膜表面に配向させ、その後露光と現像によって前記支持基材に近い程寸法と屈折率が大きくなるパターンを形成する反射防止膜の製造方法を提供する。
CyH(シクロヘキサノン)
101、111…反射防止膜、 11…支持基材、 12…高屈折率材料、
13…モスアイパターン、 14…低屈折率材料、
102…合成石英基板、 103…遮光膜、 104…LED照明。
Claims (15)
- 反射防止膜であって、
支持基材上に、ポジ型フォトレジスト材料から成り、前記支持基材に近い程寸法と屈折率が大きくなるパターンが形成されているものであることを特徴とする反射防止膜。 - 前記パターンのピッチが、400nm以下のものであることを特徴とする請求項1に記載の反射防止膜。
- 前記ポジ型フォトレジスト材料が、芳香族基を有する高分子化合物とフッ素を有する高分子化合物を含有し、該フッ素を有する高分子化合物が前記支持基材から離れた側に配向されたものであることを特徴とする請求項1又は請求項2に記載の反射防止膜。
- 前記芳香族基を有する高分子化合物の波長590~610nmの可視光における屈折率が1.6以上であり、前記フッ素を有する高分子化合物の波長590~610nmの可視光における屈折率が1.5以下のものであることを特徴とする請求項3に記載の反射防止膜。
- 前記ポジ型フォトレジスト材料が、ナフタレン、フルオレン、アントラセン、及びシクロペンタジエニル錯体から選ばれる一つ以上の構造を有している繰り返し単位を85%以上含む高分子化合物を含有しているものであることを特徴とする請求項1から請求項4のいずれか一項に記載の反射防止膜。
- 前記ポジ型フォトレジスト材料が、ヨウ素置換又は臭素置換のスチレン、ヨウ素置換又は臭素置換のフェニル(メタ)アクリレート、及びヨウ素置換又は臭素置換のフェニル(メタ)アクリルアミドのうちのいずれかを有している繰り返し単位を50%以上含む高分子化合物を含有しているものであることを特徴とする請求項1から請求項4のいずれか一項に記載の反射防止膜。
- 前記パターンが、波長590~610nmの可視光における屈折率が1.45以下の低屈折率材料で覆われているものであることを特徴とする請求項1から請求項6のいずれか一項に記載の反射防止膜。
- 前記反射防止膜が、波長400~800nmの可視光における透過率が80%以上のものであることを特徴とする請求項1から請求項7のいずれか一項に記載の反射防止膜。
- 眼鏡型ディスプレイであって、前記眼鏡型ディスプレイの眼球側の基板上に液晶、有機EL、及びマイクロLEDから選択される自己発光型ディスプレイが設置され、該自己発光型ディスプレイの眼球側に焦点を結ぶための凸レンズが設置され、該凸レンズの表面に請求項1から請求項8のいずれか一項に記載の反射防止膜が形成されているものであることを特徴とする眼鏡型ディスプレイ。
- 反射防止膜の製造方法であって、
支持基材上に、芳香族基を有する高分子化合物とフッ素を有する高分子化合物を含有するポジ型フォトレジスト材料をコートし、ベークによって前記フッ素を有する高分子化合物を膜表面に配向させ、その後露光と現像によって前記支持基材に近い程寸法と屈折率が大きくなるパターンを形成することを特徴とする反射防止膜の製造方法。 - 前記パターンのピッチを、400nm以下とすることを特徴とする請求項10に記載の反射防止膜の製造方法。
- 前記芳香族基を有する高分子化合物として、波長590~610nmの可視光における屈折率が1.6以上のものを用い、前記フッ素を有する高分子化合物として、波長590~610nmの可視光における屈折率が1.5以下のものを用いることを特徴とする請求項10又は請求項11に記載の反射防止膜の製造方法。
- 前記ポジ型フォトレジスト材料として、ナフタレン、フルオレン、アントラセン、及びシクロペンタジエニル錯体から選ばれる一つ以上の構造を有している繰り返し単位を85%以上含む高分子化合物を含有しているものを用いることを特徴とする請求項10から請求項12のいずれか一項に記載の反射防止膜の製造方法。
- 前記ポジ型フォトレジスト材料として、ヨウ素置換又は臭素置換のスチレン、ヨウ素置換又は臭素置換のフェニル(メタ)アクリレート、及びヨウ素置換又は臭素置換のフェニル(メタ)アクリルアミドのうちのいずれかを有している繰り返し単位を50%以上含む高分子化合物を含有しているものを用いることを特徴とする請求項10から請求項12のいずれか一項に記載の反射防止膜の製造方法。
- 前記パターンを形成した後、該パターンを波長590~610nmの可視光における屈折率が1.45以下の低屈折率材料で覆うことを特徴とする請求項10から請求項14のいずれか一項に記載の反射防止膜の製造方法。
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JP2019113838A (ja) | 2019-07-11 |
KR20190075837A (ko) | 2019-07-01 |
TW201928401A (zh) | 2019-07-16 |
US20190196066A1 (en) | 2019-06-27 |
TWI677703B (zh) | 2019-11-21 |
US10996378B2 (en) | 2021-05-04 |
KR102112424B1 (ko) | 2020-05-18 |
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