JP7176904B2 - 基板処理装置および基板処理方法 - Google Patents

基板処理装置および基板処理方法 Download PDF

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Publication number
JP7176904B2
JP7176904B2 JP2018177250A JP2018177250A JP7176904B2 JP 7176904 B2 JP7176904 B2 JP 7176904B2 JP 2018177250 A JP2018177250 A JP 2018177250A JP 2018177250 A JP2018177250 A JP 2018177250A JP 7176904 B2 JP7176904 B2 JP 7176904B2
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Prior art keywords
substrate
fluid supply
fluid
processing
liquid
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JP2018177250A
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English (en)
Japanese (ja)
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JP2020047885A (ja
Inventor
朋宏 高橋
圭 武知
光敏 佐々木
剛志 秋山
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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Publication date
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Priority to JP2018177250A priority Critical patent/JP7176904B2/ja
Priority to KR1020190100820A priority patent/KR102294137B1/ko
Priority to CN201910770657.9A priority patent/CN110943006A/zh
Priority to US16/551,707 priority patent/US20200098597A1/en
Priority to TW108130727A priority patent/TWI754164B/zh
Publication of JP2020047885A publication Critical patent/JP2020047885A/ja
Priority to US17/359,629 priority patent/US11699601B2/en
Priority to KR1020210109977A priority patent/KR102408818B1/ko
Application granted granted Critical
Publication of JP7176904B2 publication Critical patent/JP7176904B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
JP2018177250A 2018-09-21 2018-09-21 基板処理装置および基板処理方法 Active JP7176904B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2018177250A JP7176904B2 (ja) 2018-09-21 2018-09-21 基板処理装置および基板処理方法
KR1020190100820A KR102294137B1 (ko) 2018-09-21 2019-08-19 기판 처리 장치 및 기판 처리 방법
CN201910770657.9A CN110943006A (zh) 2018-09-21 2019-08-20 基板处理装置以及基板处理方法
US16/551,707 US20200098597A1 (en) 2018-09-21 2019-08-26 Substrate processing device and substrate processing method
TW108130727A TWI754164B (zh) 2018-09-21 2019-08-28 基板處理裝置以及基板處理方法
US17/359,629 US11699601B2 (en) 2018-09-21 2021-06-27 Substrate processing method
KR1020210109977A KR102408818B1 (ko) 2018-09-21 2021-08-20 기판 처리 장치 및 기판 처리 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018177250A JP7176904B2 (ja) 2018-09-21 2018-09-21 基板処理装置および基板処理方法

Publications (2)

Publication Number Publication Date
JP2020047885A JP2020047885A (ja) 2020-03-26
JP7176904B2 true JP7176904B2 (ja) 2022-11-22

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JP2018177250A Active JP7176904B2 (ja) 2018-09-21 2018-09-21 基板処理装置および基板処理方法

Country Status (5)

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US (2) US20200098597A1 (zh)
JP (1) JP7176904B2 (zh)
KR (2) KR102294137B1 (zh)
CN (1) CN110943006A (zh)
TW (1) TWI754164B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111524834B (zh) * 2020-04-29 2023-08-18 西安奕斯伟材料科技股份有限公司 一种多晶硅清洗装置及方法
JP7466372B2 (ja) * 2020-05-13 2024-04-12 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP7461269B2 (ja) 2020-10-09 2024-04-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP2022073307A (ja) * 2020-10-30 2022-05-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
KR20230042647A (ko) 2021-09-22 2023-03-29 가부시키가이샤 스크린 홀딩스 기판 처리 방법 및 기판 처리 장치
JP2023112618A (ja) 2022-02-01 2023-08-14 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007300118A (ja) 2006-04-27 2007-11-15 Samsung Electronics Co Ltd 基板エッチング装置及びそれを用いた基板エッチング方法
JP2010040759A (ja) 2008-08-05 2010-02-18 Toshiba Mobile Display Co Ltd 基板処理装置
JP2017069383A (ja) 2015-09-30 2017-04-06 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
JP2017069529A (ja) 2015-09-30 2017-04-06 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法
JP2018014470A (ja) 2016-07-22 2018-01-25 東京エレクトロン株式会社 基板液処理装置、基板液処理方法および記憶媒体

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JP3960457B2 (ja) * 1999-10-27 2007-08-15 東邦化成株式会社 基板処理装置
JP2006156648A (ja) * 2004-11-29 2006-06-15 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP2008010495A (ja) * 2006-06-27 2008-01-17 Dainippon Screen Mfg Co Ltd 基板処理装置
JP4907400B2 (ja) * 2006-07-25 2012-03-28 大日本スクリーン製造株式会社 基板処理装置及び基板処理方法
JP4803821B2 (ja) * 2007-03-23 2011-10-26 大日本スクリーン製造株式会社 基板処理装置
TWI406330B (zh) * 2007-09-26 2013-08-21 Dainippon Screen Mfg 基板處理裝置及基板處理方法
KR101104016B1 (ko) * 2008-11-04 2012-01-06 주식회사 엘지실트론 웨이퍼 처리 장치 및 이에 사용되는 배럴과, 웨이퍼 처리 방법
JP5599754B2 (ja) * 2010-05-31 2014-10-01 東京エレクトロン株式会社 基板処理装置、基板処理方法、およびこの基板処理方法を実行するためのコンピュータプログラムが記録された記録媒体
JP5890198B2 (ja) * 2011-03-25 2016-03-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法
JP6800675B2 (ja) * 2016-09-26 2020-12-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法及び基板処理装置
JP6693846B2 (ja) 2016-09-28 2020-05-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6971756B2 (ja) * 2017-02-01 2021-11-24 東京エレクトロン株式会社 基板液処理装置
JP6770915B2 (ja) * 2017-03-08 2020-10-21 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
US11594430B2 (en) * 2017-09-11 2023-02-28 Tokyo Electron Limited Substrate liquid processing apparatus, substrate liquid processing method and recording medium

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007300118A (ja) 2006-04-27 2007-11-15 Samsung Electronics Co Ltd 基板エッチング装置及びそれを用いた基板エッチング方法
JP2010040759A (ja) 2008-08-05 2010-02-18 Toshiba Mobile Display Co Ltd 基板処理装置
JP2017069383A (ja) 2015-09-30 2017-04-06 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
JP2017069529A (ja) 2015-09-30 2017-04-06 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法
JP2018014470A (ja) 2016-07-22 2018-01-25 東京エレクトロン株式会社 基板液処理装置、基板液処理方法および記憶媒体

Also Published As

Publication number Publication date
KR102408818B1 (ko) 2022-06-14
KR20210109493A (ko) 2021-09-06
US11699601B2 (en) 2023-07-11
TWI754164B (zh) 2022-02-01
TW202013561A (zh) 2020-04-01
US20210327729A1 (en) 2021-10-21
KR20200034579A (ko) 2020-03-31
US20200098597A1 (en) 2020-03-26
CN110943006A (zh) 2020-03-31
KR102294137B1 (ko) 2021-08-25
JP2020047885A (ja) 2020-03-26

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