JP7175864B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7175864B2
JP7175864B2 JP2019168401A JP2019168401A JP7175864B2 JP 7175864 B2 JP7175864 B2 JP 7175864B2 JP 2019168401 A JP2019168401 A JP 2019168401A JP 2019168401 A JP2019168401 A JP 2019168401A JP 7175864 B2 JP7175864 B2 JP 7175864B2
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JP
Japan
Prior art keywords
insulating member
semiconductor device
silicon substrate
portions
gate electrode
Prior art date
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Application number
JP2019168401A
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English (en)
Japanese (ja)
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JP2021048168A5 (https=
JP2021048168A (ja
Inventor
香奈子 小松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Priority to JP2019168401A priority Critical patent/JP7175864B2/ja
Priority to US16/702,790 priority patent/US20210083089A1/en
Priority to CN201911366432.3A priority patent/CN112531028B/zh
Publication of JP2021048168A publication Critical patent/JP2021048168A/ja
Publication of JP2021048168A5 publication Critical patent/JP2021048168A5/ja
Priority to US17/677,578 priority patent/US12356657B2/en
Application granted granted Critical
Publication of JP7175864B2 publication Critical patent/JP7175864B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2019168401A 2019-09-17 2019-09-17 半導体装置 Active JP7175864B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019168401A JP7175864B2 (ja) 2019-09-17 2019-09-17 半導体装置
US16/702,790 US20210083089A1 (en) 2019-09-17 2019-12-04 Semiconductor device
CN201911366432.3A CN112531028B (zh) 2019-09-17 2019-12-26 半导体装置
US17/677,578 US12356657B2 (en) 2019-09-17 2022-02-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019168401A JP7175864B2 (ja) 2019-09-17 2019-09-17 半導体装置

Publications (3)

Publication Number Publication Date
JP2021048168A JP2021048168A (ja) 2021-03-25
JP2021048168A5 JP2021048168A5 (https=) 2021-10-14
JP7175864B2 true JP7175864B2 (ja) 2022-11-21

Family

ID=74869784

Family Applications (1)

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JP2019168401A Active JP7175864B2 (ja) 2019-09-17 2019-09-17 半導体装置

Country Status (3)

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US (2) US20210083089A1 (https=)
JP (1) JP7175864B2 (https=)
CN (1) CN112531028B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7611072B2 (ja) * 2021-05-21 2025-01-09 ルネサスエレクトロニクス株式会社 半導体装置
JP7596242B2 (ja) * 2021-09-22 2024-12-09 株式会社東芝 半導体装置
CN115881779B (zh) * 2023-02-08 2023-05-30 合肥新晶集成电路有限公司 晶体管结构、半导体结构及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014027062A (ja) 2012-07-25 2014-02-06 Asahi Kasei Electronics Co Ltd 電界効果トランジスタ及び半導体装置
US20170194489A1 (en) 2015-12-31 2017-07-06 SK Hynix Inc. Lateral power integrated devices having low on-resistance

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100289049B1 (ko) 1997-12-17 2001-10-24 정선종 이중필드판구조를갖는전력소자
JPH11243198A (ja) * 1998-02-24 1999-09-07 Matsushita Electric Works Ltd 半導体装置及びその製造方法
JP5161439B2 (ja) * 2006-07-31 2013-03-13 オンセミコンダクター・トレーディング・リミテッド 半導体装置
US8754469B2 (en) 2010-10-26 2014-06-17 Texas Instruments Incorporated Hybrid active-field gap extended drain MOS transistor
JP2013201191A (ja) * 2012-03-23 2013-10-03 Toshiba Corp 半導体装置
JP2013232533A (ja) * 2012-04-27 2013-11-14 Rohm Co Ltd 半導体装置および半導体装置の製造方法
JP6284421B2 (ja) 2014-05-09 2018-02-28 ルネサスエレクトロニクス株式会社 半導体装置
CN106549052B (zh) * 2015-09-17 2021-05-25 联华电子股份有限公司 横向扩散金属氧化物半导体晶体管及其制作方法
KR102286013B1 (ko) * 2015-10-07 2021-08-05 에스케이하이닉스 시스템아이씨 주식회사 트랜치 절연 필드플레이트 및 금속 필드플레이트를 갖는 수평형 고전압 집적소자
JP6273329B2 (ja) * 2016-08-15 2018-01-31 ローム株式会社 半導体装置
JP2019165094A (ja) * 2018-03-19 2019-09-26 株式会社東芝 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014027062A (ja) 2012-07-25 2014-02-06 Asahi Kasei Electronics Co Ltd 電界効果トランジスタ及び半導体装置
US20170194489A1 (en) 2015-12-31 2017-07-06 SK Hynix Inc. Lateral power integrated devices having low on-resistance

Also Published As

Publication number Publication date
US20220181486A1 (en) 2022-06-09
JP2021048168A (ja) 2021-03-25
CN112531028A (zh) 2021-03-19
US20210083089A1 (en) 2021-03-18
CN112531028B (zh) 2024-05-17
US12356657B2 (en) 2025-07-08

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