JP7158373B2 - 裏面半導体成長 - Google Patents

裏面半導体成長 Download PDF

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JP7158373B2
JP7158373B2 JP2019506348A JP2019506348A JP7158373B2 JP 7158373 B2 JP7158373 B2 JP 7158373B2 JP 2019506348 A JP2019506348 A JP 2019506348A JP 2019506348 A JP2019506348 A JP 2019506348A JP 7158373 B2 JP7158373 B2 JP 7158373B2
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source
drain regions
backside
layer
drain
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JP2019525478A5 (https=
JP2019525478A (ja
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シナン・ゴクテペリ
リチャード・ハモンド
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クアルコム，インコーポレイテッド
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  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Physics & Mathematics (AREA)
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JP2019506348A 2016-08-11 2017-07-12 裏面半導体成長 Active JP7158373B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/234,889 2016-08-11
US15/234,889 US9780210B1 (en) 2016-08-11 2016-08-11 Backside semiconductor growth
PCT/US2017/041755 WO2018031175A1 (en) 2016-08-11 2017-07-12 Backside semiconductor growth

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JP2019525478A JP2019525478A (ja) 2019-09-05
JP2019525478A5 JP2019525478A5 (https=) 2020-08-06
JP7158373B2 true JP7158373B2 (ja) 2022-10-21

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US (1) US9780210B1 (https=)
EP (1) EP3497715B8 (https=)
JP (1) JP7158373B2 (https=)
KR (1) KR102505236B1 (https=)
CN (1) CN109643691B (https=)
BR (1) BR112019002343B1 (https=)
CA (1) CA3030289C (https=)
WO (1) WO2018031175A1 (https=)

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EP3440705A4 (en) 2016-04-01 2019-11-13 INTEL Corporation TRANSISTOR CELLS WITH A DEEP CONTACT WITH CLADDING OF DIELECTRIC MATERIAL
US9847293B1 (en) * 2016-08-18 2017-12-19 Qualcomm Incorporated Utilization of backside silicidation to form dual side contacted capacitor
CN109643742B (zh) 2016-08-26 2024-09-27 英特尔公司 集成电路器件结构和双侧制造技术
US10431664B2 (en) * 2017-06-30 2019-10-01 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure and methods thereof
DE102018106266B4 (de) 2017-06-30 2024-07-25 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtung und verfahren zu ihrer herstellung
US10439565B2 (en) * 2017-09-27 2019-10-08 Qualcomm Incorporated Low parasitic capacitance low noise amplifier
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