KR102505236B1 - 백사이드 반도체 성장 - Google Patents

백사이드 반도체 성장 Download PDF

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KR102505236B1
KR102505236B1 KR1020197003917A KR20197003917A KR102505236B1 KR 102505236 B1 KR102505236 B1 KR 102505236B1 KR 1020197003917 A KR1020197003917 A KR 1020197003917A KR 20197003917 A KR20197003917 A KR 20197003917A KR 102505236 B1 KR102505236 B1 KR 102505236B1
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backside
source
drain region
transistor
circuit structure
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KR20190036533A (ko
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시난 고크테펠리
리차드 햄몬드
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퀄컴 인코포레이티드
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    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H01L21/2652—
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    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
    • H04B1/006—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using switches for selecting the desired band
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    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
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    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
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    • H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
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    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
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    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
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  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
KR1020197003917A 2016-08-11 2017-07-12 백사이드 반도체 성장 Active KR102505236B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/234,889 2016-08-11
US15/234,889 US9780210B1 (en) 2016-08-11 2016-08-11 Backside semiconductor growth
PCT/US2017/041755 WO2018031175A1 (en) 2016-08-11 2017-07-12 Backside semiconductor growth

Publications (2)

Publication Number Publication Date
KR20190036533A KR20190036533A (ko) 2019-04-04
KR102505236B1 true KR102505236B1 (ko) 2023-03-02

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Country Status (8)

Country Link
US (1) US9780210B1 (https=)
EP (1) EP3497715B8 (https=)
JP (1) JP7158373B2 (https=)
KR (1) KR102505236B1 (https=)
CN (1) CN109643691B (https=)
BR (1) BR112019002343B1 (https=)
CA (1) CA3030289C (https=)
WO (1) WO2018031175A1 (https=)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017052562A1 (en) 2015-09-24 2017-03-30 Intel Corporation Methods of forming backside self-aligned vias and structures formed thereby
EP3440705A4 (en) 2016-04-01 2019-11-13 INTEL Corporation TRANSISTOR CELLS WITH A DEEP CONTACT WITH CLADDING OF DIELECTRIC MATERIAL
US9847293B1 (en) * 2016-08-18 2017-12-19 Qualcomm Incorporated Utilization of backside silicidation to form dual side contacted capacitor
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