JP7155117B2 - Uv ledを有する照明デバイス - Google Patents
Uv ledを有する照明デバイス Download PDFInfo
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- JP7155117B2 JP7155117B2 JP2019524433A JP2019524433A JP7155117B2 JP 7155117 B2 JP7155117 B2 JP 7155117B2 JP 2019524433 A JP2019524433 A JP 2019524433A JP 2019524433 A JP2019524433 A JP 2019524433A JP 7155117 B2 JP7155117 B2 JP 7155117B2
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- light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
Description
Claims (14)
- 少なくとも1つの第1の光出力面から出射光方向に可視光を発するための、基板上に配設された複数の発光ダイオードLEDと、
第2の光出力面から前記出射光方向にUV光を発するための少なくとも1つの紫外線発光ダイオードUV LEDと、
蛍光体層であって、前記LEDが前記蛍光体層によって覆われるように少なくとも前記複数のLED上に配設された蛍光体層と
を備える照明デバイスであって、
前記少なくとも1つのUV LEDからUV光を発するための前記第2の光出力面が、前記出射光方向において前記基板に対して、前記少なくとも1つの第1の光出力面よりも高い位置に置かれており、
前記複数のLEDが、有色光及び/又は白色光を生成するように構成されている、
照明デバイス。 - 前記少なくとも1つのUV LEDが、前記蛍光体層によって覆われており、前記少なくとも1つのUV LEDの上部にある前記蛍光体層が、前記LEDの上部にある前記蛍光体層よりも薄い、請求項1に記載の照明デバイス。
- 前記第2の光出力面が前記出射光方向において前記少なくとも1つの第1の光出力面よりも高くなるように、前記少なくとも1つのUV LEDが、前記基板上に配置されたベース上に配設されている、請求項1又は2に記載の照明デバイス。
- 前記ベースが、前記蛍光体層の厚さよりも大きい厚さを有する、請求項3に記載の照明デバイス。
- 前記ベースが、前記少なくとも1つのUV LEDを前記基板に電気的に接続するためのコネクタを備える、請求項3又は4に記載の照明デバイス。
- 前記ベースが光透過性材料を含む、請求項3乃至5のいずれか一項に記載の照明デバイス。
- 前記ベースが光反射性材料を含む、請求項3乃至5のいずれか一項に記載の照明デバイス。
- 前記基板の近くでの前記ベースの横幅が、前記蛍光体層の表面での前記ベースの横幅よりも大きい、請求項3乃至7のいずれか一項に記載の照明デバイス。
- 前記第2の光出力面が前記出射光方向において前記少なくとも1つの第1の光出力面よりも高くなるように、光透過性材料の層が、前記UV LEDの上部に配設されている、請求項1乃至8のいずれか一項に記載の照明デバイス。
- 前記基板が、前記少なくとも1つのUV LEDを保持するように構成された穴を備える、請求項1乃至9のいずれか一項に記載の照明デバイス。
- 前記穴が、前記基板の縁部又は中心部に配置されている、請求項10に記載の照明デバイス。
- 前記少なくとも1つのUV LEDが、個々の表面実装デバイスSMD UV LEDである、請求項1乃至9のいずれか一項に記載の照明デバイス。
- 請求項1乃至12のいずれか一項に記載の照明デバイスを備えるランプ又は照明器具。
- 照明デバイスを製造する方法であって、
少なくとも1つの第1の光出力面から出射光方向に可視光を発するための複数のLEDを基板上に接合するステップと、
前記複数のLED同士を電気的に接続するステップと、
第2の光出力面から前記出射光方向にUV光を発するための少なくとも1つのUV LEDを前記基板上に実装するステップと、
少なくとも前記複数のLED上に蛍光体層を設けるステップであって、前記LEDが前記蛍光体層によって覆われるようにする、ステップと、を含み、
前記少なくとも1つのUV LEDからUV光を発するための前記第2の光出力面が、前記出射光方向において前記基板に対して、前記少なくとも1つの第1の光出力面よりも高い位置に置かれ、
前記複数のLEDが、有色光及び/又は白色光を生成するように構成されている、
方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP16199349.8 | 2016-11-17 | ||
EP16199349 | 2016-11-17 | ||
PCT/EP2017/079123 WO2018091433A1 (en) | 2016-11-17 | 2017-11-14 | Lighting device with uv led |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2019536278A JP2019536278A (ja) | 2019-12-12 |
JP2019536278A5 JP2019536278A5 (ja) | 2020-12-24 |
JP7155117B2 true JP7155117B2 (ja) | 2022-10-18 |
Family
ID=57354164
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019524433A Active JP7155117B2 (ja) | 2016-11-17 | 2017-11-14 | Uv ledを有する照明デバイス |
Country Status (6)
Country | Link |
---|---|
US (1) | US10679975B2 (ja) |
EP (1) | EP3542400B1 (ja) |
JP (1) | JP7155117B2 (ja) |
CN (1) | CN109952651B (ja) |
ES (1) | ES2884202T3 (ja) |
WO (1) | WO2018091433A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20190012555A (ko) * | 2017-07-27 | 2019-02-11 | 서울바이오시스 주식회사 | 조명 장치 |
CN109065525A (zh) * | 2018-07-10 | 2018-12-21 | 佛山市国星光电股份有限公司 | 一种led模组及led照明灯 |
US20200212265A1 (en) * | 2018-12-26 | 2020-07-02 | Seoul Viosys Co., Ltd. | Led lighting apparatus having additional function |
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2017
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- 2017-11-14 WO PCT/EP2017/079123 patent/WO2018091433A1/en unknown
- 2017-11-14 EP EP17803856.8A patent/EP3542400B1/en active Active
- 2017-11-14 JP JP2019524433A patent/JP7155117B2/ja active Active
- 2017-11-14 US US16/347,804 patent/US10679975B2/en active Active
- 2017-11-14 ES ES17803856T patent/ES2884202T3/es active Active
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JP2005101458A (ja) | 2003-09-26 | 2005-04-14 | Sharp Corp | 半導体発光装置 |
JP2006012511A (ja) | 2004-06-24 | 2006-01-12 | Toshiba Lighting & Technology Corp | 照明装置及び貯蔵庫 |
JP2008523601A (ja) | 2004-12-09 | 2008-07-03 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 照明システム |
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JP2008251644A (ja) | 2007-03-29 | 2008-10-16 | Sharp Corp | 半導体発光装置 |
JP2014082438A (ja) | 2012-09-25 | 2014-05-08 | Toshiba Lighting & Technology Corp | 発光装置および照明装置 |
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Also Published As
Publication number | Publication date |
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EP3542400A1 (en) | 2019-09-25 |
CN109952651B (zh) | 2023-10-10 |
US10679975B2 (en) | 2020-06-09 |
US20190355703A1 (en) | 2019-11-21 |
EP3542400B1 (en) | 2021-06-09 |
ES2884202T3 (es) | 2021-12-10 |
CN109952651A (zh) | 2019-06-28 |
WO2018091433A1 (en) | 2018-05-24 |
JP2019536278A (ja) | 2019-12-12 |
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