JP7123688B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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JP7123688B2
JP7123688B2 JP2018147942A JP2018147942A JP7123688B2 JP 7123688 B2 JP7123688 B2 JP 7123688B2 JP 2018147942 A JP2018147942 A JP 2018147942A JP 2018147942 A JP2018147942 A JP 2018147942A JP 7123688 B2 JP7123688 B2 JP 7123688B2
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semiconductor device
paste
chip mounting
chip
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JP2020024998A (ja
JP2020024998A5 (https=
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聡史 白木
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to JP2018147942A priority Critical patent/JP7123688B2/ja
Priority to US16/510,087 priority patent/US11239196B2/en
Publication of JP2020024998A publication Critical patent/JP2020024998A/ja
Publication of JP2020024998A5 publication Critical patent/JP2020024998A5/ja
Priority to US17/645,815 priority patent/US12009333B2/en
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    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
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    • H10W70/411—Chip-supporting parts, e.g. die pads
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    • H10W72/01321—Manufacture or treatment of die-attach connectors using local deposition
    • H10W72/01323—Manufacture or treatment of die-attach connectors using local deposition in liquid form, e.g. by dispensing droplets or by screen printing
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    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07352—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in structures or sizes
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    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Die Bonding (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Powder Metallurgy (AREA)
JP2018147942A 2018-08-06 2018-08-06 半導体装置及びその製造方法 Active JP7123688B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018147942A JP7123688B2 (ja) 2018-08-06 2018-08-06 半導体装置及びその製造方法
US16/510,087 US11239196B2 (en) 2018-08-06 2019-07-12 Semiconductor device
US17/645,815 US12009333B2 (en) 2018-08-06 2021-12-23 Semiconductor device

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JP2018147942A JP7123688B2 (ja) 2018-08-06 2018-08-06 半導体装置及びその製造方法

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JP2020024998A JP2020024998A (ja) 2020-02-13
JP2020024998A5 JP2020024998A5 (https=) 2021-08-19
JP7123688B2 true JP7123688B2 (ja) 2022-08-23

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Families Citing this family (7)

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Publication number Priority date Publication date Assignee Title
WO2020202970A1 (ja) * 2019-03-29 2020-10-08 三井金属鉱業株式会社 接合体及びその製造方法
JP7351134B2 (ja) * 2019-08-08 2023-09-27 富士電機株式会社 半導体装置及び半導体装置の製造方法
CN115485858A (zh) * 2020-05-08 2022-12-16 罗姆股份有限公司 半导体装置
JP7732339B2 (ja) * 2021-11-11 2025-09-02 富士電機株式会社 半導体装置及び半導体装置の製造方法
JP2023117060A (ja) * 2022-02-10 2023-08-23 富士電機株式会社 半導体装置の製造方法および半導体装置
JP7824605B2 (ja) * 2022-07-29 2026-03-05 株式会社デンソー 半導体装置及びその製造方法
WO2026003996A1 (ja) * 2024-06-26 2026-01-02 三菱電機株式会社 半導体装置及び電力変換装置

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JP2014135411A (ja) 2013-01-11 2014-07-24 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
JP2015177182A (ja) 2014-03-18 2015-10-05 三菱電機株式会社 パワーモジュール
JP2016081943A (ja) 2014-10-09 2016-05-16 三菱電機株式会社 半導体装置及びその製造方法

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JP2014029897A (ja) 2012-07-31 2014-02-13 Hitachi Ltd 導電性接合体およびそれを用いた半導体装置
US8835299B2 (en) * 2012-08-29 2014-09-16 Infineon Technologies Ag Pre-sintered semiconductor die structure
JP2015115481A (ja) * 2013-12-12 2015-06-22 株式会社東芝 半導体部品および半導体部品の製造方法
US20170294397A1 (en) * 2016-04-08 2017-10-12 Hamilton Sundstrand Corporation Die and substrate assembly with graded density bonding layer
TWI689016B (zh) * 2016-08-22 2020-03-21 日商千住金屬工業股份有限公司 金屬燒結接合體、及晶片接合方法
DE102016118784A1 (de) * 2016-10-04 2018-04-05 Infineon Technologies Ag Chipträger, konfiguriert zur delaminierungsfreien Kapselung und stabilen Sinterung
JP6366766B2 (ja) 2017-03-24 2018-08-01 三菱電機株式会社 半導体装置
JP2019012755A (ja) * 2017-06-29 2019-01-24 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置

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Publication number Priority date Publication date Assignee Title
JP2014135411A (ja) 2013-01-11 2014-07-24 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
JP2015177182A (ja) 2014-03-18 2015-10-05 三菱電機株式会社 パワーモジュール
JP2016081943A (ja) 2014-10-09 2016-05-16 三菱電機株式会社 半導体装置及びその製造方法

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