JP7108464B2 - chuck table - Google Patents

chuck table Download PDF

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JP7108464B2
JP7108464B2 JP2018100421A JP2018100421A JP7108464B2 JP 7108464 B2 JP7108464 B2 JP 7108464B2 JP 2018100421 A JP2018100421 A JP 2018100421A JP 2018100421 A JP2018100421 A JP 2018100421A JP 7108464 B2 JP7108464 B2 JP 7108464B2
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chuck table
outer peripheral
plate
annular wall
peripheral annular
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JP2019204916A (en
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俊 森
伸一 波岡
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Disco Corp
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Disco Corp
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Priority to JP2018100421A priority Critical patent/JP7108464B2/en
Priority to KR1020190045988A priority patent/KR102644407B1/en
Priority to TW108117713A priority patent/TWI809107B/en
Priority to CN201910434221.2A priority patent/CN110534471B/en
Publication of JP2019204916A publication Critical patent/JP2019204916A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemically Coating (AREA)
  • Jigs For Machine Tools (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Milling, Broaching, Filing, Reaming, And Others (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Gripping On Spindles (AREA)
  • Dicing (AREA)

Description

本発明は、板状ワークを保持するチャックテーブルに関する。 The present invention relates to a chuck table that holds a plate-shaped work.

バイト工具で板状ワークを旋削加工する加工装置に用いられるチャックテーブルは、例えば、外周側に形成された外周環状保持部と、該外周環状保持部の内側に形成され吸引手段に連通する吸引凹部と、該吸引凹部内に形成された複数の支持ピンとによって構成されている（例えば、特許文献１参照）。このような構成のチャックテーブルは、複数の支持ピンによって板状ワークを支持することで、支持ピンによる支持面積が小さいため、ゴミ等の異物を板状ワークとの間に挟みこむことがなく、板状ワークを平坦に保持することができる。 A chuck table used in a processing apparatus for turning a plate-shaped work with a cutting tool includes, for example, an outer peripheral annular holding portion formed on the outer peripheral side and a suction recess formed inside the outer peripheral annular holding portion and communicating with a suction means. and a plurality of support pins formed in the suction recess (see Patent Document 1, for example). In the chuck table having such a configuration, the plate-shaped work is supported by a plurality of support pins, and the support area of the support pins is small. A plate-like work can be held flat.

特開２００５－３３３０６７号公報JP-A-2005-333067

チャックテーブルは経年変化によって機械的な歪みが生じ、支持ピンの上面の高さが微妙に変位する。このため、チャックテーブルの上面（外周環状保持部の上面及び各支持ピンの上面）をバイト工具によって旋削し、支持ピンの高さを揃えている。
ここで、バイト工具で支持ピンの上面を旋削しやすくするために、支持ピンの上面に厚さが２００μｍ程度のニッケル等のメッキ層を形成している。このメッキ層を定期的に数μｍずつ旋削して支持ピンの高さを揃えている。 The chuck table undergoes mechanical distortion due to aging, and the height of the upper surface of the support pin is slightly displaced. For this reason, the upper surface of the chuck table (the upper surface of the outer peripheral annular holding portion and the upper surface of each support pin) is turned by a cutting tool to align the heights of the support pins.
Here, a plated layer of nickel or the like having a thickness of about 200 μm is formed on the upper surface of the support pin so that the upper surface of the support pin can be easily turned with a cutting tool. The plated layer is periodically turned by several μm to make the height of the support pins uniform.

このようにバイト工具でメッキ層を旋削するとき、メッキ層に力がかかりメッキ層が剥がれてしまう問題が有る。また、２００μｍという厚いメッキ層を形成させるために電気メッキが適しているが、電気メッキを可能にする材質は、熱変形をしやすい。そのため、チャックテーブルの各部を電気メッキが可能である材質で形成すると、バイト旋削時に発生する加工熱により、支持ピン等が熱変形して保持されている板状ワークが均一な厚さにならないという問題がある。 When the plated layer is turned with a cutting tool in this way, there is a problem that force is applied to the plated layer and the plated layer is peeled off. Electroplating is suitable for forming a thick plating layer of 200 μm, but materials that allow electroplating are susceptible to thermal deformation. For this reason, if each part of the chuck table is made of a material that can be electroplated, the processing heat generated during turning with the cutting tool deforms the support pins, etc., causing the plate-shaped work to be held with an uneven thickness. There's a problem.

よって、ピンチャックテーブルにおいては、熱変形しにくい材質に、旋削加工で剥がれないメッキ層を形成するという課題がある。 Therefore, in the pin chuck table, there is a problem of forming a plated layer that does not come off by turning on a material that is resistant to thermal deformation.

上記課題を解決するための本発明は、板状ワークの下面を吸引保持して上面をバイト工具で旋削加工する加工装置に用いられるチャックテーブルであって、該板状ワークの下面の外周部分を環状の上面で支持する外周環状壁と、該外周環状壁の内側に形成され該外周環状壁の上面より低い底面を有する吸引凹部と、該吸引凹部の該底面に形成され吸引源に連通する吸引口と、該吸引口を避けて該底面に等間隔で複数立設され該外周環状壁の上面と上面が同一高さである支持ピンとを備え、該外周環状壁の側面と上面及び該支持ピンの側面と上面とにメッキ層が形成されたチャックテーブルである。 The present invention for solving the above-mentioned problems is a chuck table for use in a processing apparatus that sucks and holds the lower surface of a plate-like work and turns the upper surface of the plate-like work with a cutting tool, wherein the outer peripheral portion of the lower surface of the plate-like work is An outer peripheral annular wall supported by an annular upper surface, a suction recess formed inside the outer peripheral annular wall and having a bottom surface lower than the upper surface of the outer peripheral annular wall, and a suction recess formed on the bottom surface of the suction recess communicating with a suction source and a plurality of support pins erected at equal intervals on the bottom surface avoiding the suction port and having the same height as the upper surface of the outer peripheral annular wall, the side surface and the upper surface of the outer peripheral annular wall and the support pins. The chuck table has plated layers formed on the side and top surfaces of the chuck table.

前記外周環状壁と前記吸引凹部と前記支持ピンとをファインセラミックスで構成し、前記メッキ層は無電解ニッケルメッキで形成すると好ましい。 It is preferable that the outer peripheral annular wall, the suction recess, and the support pin are made of fine ceramics, and the plating layer is made of electroless nickel plating.

前記支持ピンは、前記上面を有する円錐台または角錐台で前記底面から立設されると好ましい。 Preferably, the support pin is a truncated cone or truncated pyramid having the top surface and is erected from the bottom surface.

本発明に係るチャックテーブルは、外周環状壁の上面と支持ピンの上面とが同一高さであり、外周環状壁の側面と上面及び支持ピンの側面と上面とにメッキ層を形成しているため、メッキ層をバイト工具で旋削加工したときにメッキ層が剥がれにくい。 In the chuck table according to the present invention, the upper surface of the outer peripheral annular wall and the upper surface of the support pins are at the same height, and the side and upper surfaces of the outer peripheral annular wall and the side and upper surfaces of the support pins are plated. , The plated layer does not easily peel off when the plated layer is turned with a cutting tool.

また、チャックテーブルの外周環状壁と吸引凹部と支持ピンとをファインセラミックスで構成し、メッキ層は無電解ニッケルメッキで形成することで、チャックテーブルが、旋削加工する際の加工熱で熱変形し難くなるため、保持した板状ワークを均一な厚さに旋削加工することができる。 In addition, the outer peripheral annular wall of the chuck table, the suction recesses, and the support pins are made of fine ceramics, and the plating layer is formed of electroless nickel plating. Therefore, the held plate-shaped work can be turned to have a uniform thickness.

支持ピンが、前記上面を有する円錐台または角錐台で吸引凹部の底面から立設されることで、支持ピンの上面と側面（斜面）との間の角度が鈍角になるため、メッキ層をより剥がれ難くすることができる。 Since the support pin is a truncated cone or truncated pyramid having the upper surface and is erected from the bottom surface of the suction recess, the angle between the upper surface and the side surface (inclined surface) of the support pin becomes an obtuse angle. It can be made difficult to peel off.

本発明に係るチャックテーブルが配設された加工装置の一例を示す斜視図である。1 is a perspective view showing an example of a processing apparatus provided with a chuck table according to the present invention; FIG. チャックテーブル及びＹ軸方向移動手段の一例を示す斜視図である。3 is a perspective view showing an example of a chuck table and Y-axis direction moving means; FIG. 旋削手段の一例を示す斜視図である。It is a perspective view which shows an example of a turning means. 支持ピンが円柱形状であるチャックテーブルの一例を示す断面図である。FIG. 4 is a cross-sectional view showing an example of a chuck table in which support pins are cylindrical; 支持ピンが円錐台形状または角錐台形状であるチャックテーブルの別例を示す断面図である。FIG. 10 is a cross-sectional view showing another example of the chuck table in which the support pins have a truncated cone shape or a truncated pyramid shape; 無電解ニッケルメッキ装置の一例を示す説明図である。It is an explanatory view showing an example of an electroless nickel plating apparatus. チャックテーブルのメッキ層を旋削加工して平坦な保持面を形成している状態を示す断面図である。FIG. 4 is a cross-sectional view showing a state in which a plated layer of a chuck table is turned to form a flat holding surface; チャックテーブルの平坦な保持面で保持した板状ワークに旋削加工を施している状態を説明する断面図である。FIG. 5 is a cross-sectional view for explaining a state in which a plate-like work held by a flat holding surface of a chuck table is subjected to turning.

図１に示す加工装置１は、本発明に係るチャックテーブル３０上に保持された板状ワークＷを、バイト工具６４を備えるバイト旋削手段６によって旋削加工する装置である。加工装置１のベース１０上の前方（－Ｙ方向側）は、チャックテーブル３０に対し板状ワークＷの着脱が行われる領域となっており、ベース１０上の後方（＋Ｙ方向側）は、バイト旋削手段６によってチャックテーブル３０上に保持された板状ワークＷの旋削加工が行われる領域となっている。 A processing apparatus 1 shown in FIG. 1 is an apparatus for turning a plate-like work W held on a chuck table 30 according to the present invention by means of a turning tool 6 having a turning tool 64 . The front side (−Y direction side) of the base 10 of the processing apparatus 1 is an area where the plate-like workpiece W is attached to and detached from the chuck table 30, and the rear side (+Y direction side) of the base 10 is a cutting tool. This is an area where the plate-like work W held on the chuck table 30 is turned by the turning means 6 .

図１に示す板状ワークＷは、例えば、シリコンを母材とする外形が円形の半導体ウェーハであるが、これに限定されるものではない。そして、板状ワークＷの上面Ｗａが旋削加工される被加工面となる。板状ワークＷの下面Ｗｂは、図示しない保護テープが貼着されて保護されている。 The plate-shaped work W shown in FIG. 1 is, for example, a semiconductor wafer having a circular outer shape and made of silicon as a base material, but is not limited to this. Then, the upper surface Wa of the plate-like workpiece W becomes a surface to be turned. The lower surface Wb of the plate-shaped workpiece W is protected by a protective tape (not shown).

加工装置１のベース１０の前方側には、オペレータが加工条件等を入力するための入力手段１９が配設されている。また、ベース１０上の前方側には、旋削加工前の板状ワークＷを収容する第一のカセット３３１及び旋削加工済みの板状ワークＷを収容する第二のカセット３３２が配設されている。第一のカセット３３１と第二のカセット３３２との間には、第一のカセット３３１から旋削加工前の板状ワークＷを搬出すると共に、旋削加工済みの板状ワークＷを第二のカセット３３２に搬入するロボット３３０が配設されている。 On the front side of the base 10 of the processing apparatus 1, an input means 19 is arranged for the operator to input processing conditions and the like. Further, on the front side of the base 10, a first cassette 331 for storing the plate-like work W before turning and a second cassette 332 for storing the plate-like work W after turning are arranged. . Between the first cassette 331 and the second cassette 332, the plate-like work W before turning is carried out from the first cassette 331, and the plate-like work W after turning is transferred to the second cassette 332. A robot 330 is arranged to carry in.

ロボット３３０の可動域には、加工前の板状ワークＷを仮置きする仮置きテーブル３３３ａが設けられており、仮置きテーブル３３３ａには位置合わせ手段３３３ｂが配設されている。位置合わせ手段３３３ｂは、第一のカセット３３１から搬出され仮置きテーブル３３３ａに載置された板状ワークＷを、縮径する位置合わせピンで所定の位置に位置合わせ（センタリング）する。
ロボット３３０の可動域には、旋削加工済みの板状ワークＷを洗浄する洗浄手段３３４が配設されている。洗浄手段３３４は、例えば、枚葉式のスピンナー洗浄装置である。 A temporary placement table 333a for temporarily placing a plate-like workpiece W before processing is provided in the movable range of the robot 330, and an alignment means 333b is arranged on the temporary placement table 333a. The alignment means 333b aligns (centers) the plate-like work W carried out from the first cassette 331 and placed on the temporary placement table 333a at a predetermined position by means of a diameter-reduced alignment pin.
In the movable range of the robot 330, cleaning means 334 for cleaning the plate-shaped work W that has been turned is arranged. The cleaning means 334 is, for example, a single wafer spinner cleaning device.

位置合わせ手段３３３ｂの近傍には第一の搬送手段３３５が配設され、洗浄手段３３４の近傍には第二の搬送手段３３６が配設されている。第一の搬送手段３３５は、仮置きテーブル３３３ａに載置されセンタリングされた旋削加工前の板状ワークＷをチャックテーブル３０に搬送し、第二の搬送手段３３６は、チャックテーブル３０に保持された旋削加工済みの板状ワークＷを洗浄手段３３４に搬送する。 A first conveying means 335 is arranged near the alignment means 333 b , and a second conveying means 336 is arranged near the cleaning means 334 . The first conveying means 335 conveys the plate-shaped work W before turning that has been placed on the temporary placement table 333 a and is centered to the chuck table 30 , and the second conveying means 336 is held by the chuck table 30 . The plate-like work W that has been turned is conveyed to the cleaning means 334 .

図２に示すように、チャックテーブル３０は、チャックテーブル３０と共に移動可能なカバー３９により周囲を囲まれつつ、チャックテーブル３０の下方に配設された回転手段３４によりＺ軸方向の軸心周りに回転可能となっている。 As shown in FIG. 2, the chuck table 30 is surrounded by a cover 39 movable together with the chuck table 30, and rotated around the Z-axis direction by a rotating means 34 disposed below the chuck table 30. As shown in FIG. It is rotatable.

図１、２に示すように、チャックテーブル３０、カバー３９、及びカバー３９に連結された蛇腹カバー３９ａの下方には、チャックテーブル３０をＹ軸方向に移動させるＹ軸移動手段１４が配設されている。図２に示すＹ軸移動手段１４は、Ｙ軸方向の軸心を有するボールネジ１４０と、ボールネジ１４０と平行に配設された一対のガイドレール１４１と、ボールネジ１４０に連結しボールネジ１４０を回動させるモータ１４２と、内部に備えるナットがボールネジ１４０に螺合し底部がガイドレール１４１上を摺動する可動板１４３とを備えており、モータ１４２がボールネジ１４０を回動させると、これに伴い可動板１４３がガイドレール１４１にガイドされてＹ軸方向に移動し、可動板１４３上に回転手段３４を介して配設されたチャックテーブル３０及びカバー３９がＹ軸方向に移動する。また、蛇腹カバー３９ａはチャックテーブル３０の移動に伴ってＹ軸方向に伸縮する。 As shown in FIGS. 1 and 2, Y-axis moving means 14 for moving the chuck table 30 in the Y-axis direction is provided below the chuck table 30, the cover 39, and the bellows cover 39a connected to the cover 39. ing. The Y-axis moving means 14 shown in FIG. 2 includes a ball screw 140 having an axis in the Y-axis direction, a pair of guide rails 141 arranged parallel to the ball screw 140, and connected to the ball screw 140 to rotate the ball screw 140. A motor 142 and a movable plate 143 having an internal nut screwed onto the ball screw 140 and a bottom sliding on the guide rail 141 are provided. 143 is guided by the guide rail 141 and moves in the Y-axis direction, and the chuck table 30 and the cover 39 arranged on the movable plate 143 via the rotating means 34 move in the Y-axis direction. Further, the bellows cover 39a expands and contracts in the Y-axis direction as the chuck table 30 moves.

図１に示すように、ベース１０上の後部側（＋Ｙ方向側）にはコラム１１が立設されており、コラム１１の前面にはバイト旋削手段６をチャックテーブル３０に対して離間又は接近するＺ軸方向（鉛直方向）に加工送りする加工送り手段５が配設されている。図１、３に示す加工送り手段５は、Ｚ軸方向の軸心を有するボールネジ５０と、ボールネジ５０と平行に配設された一対のガイドレール５１と、ボールネジ５０の上端に連結しボールネジ５０を回動させるモータ５２と、内部のナットがボールネジ５０に螺合し側部がガイドレール５１に摺接する昇降板５３と、昇降板５３に固定されバイト旋削手段６を保持するホルダー５４とを備えており、モータ５２がボールネジ５０を回動させることに伴い昇降板５３がガイドレール５１にガイドされてＺ軸方向に往復移動し、ホルダー５４に保持されたバイト旋削手段６がＺ軸方向に加工送りされる。 As shown in FIG. 1, a column 11 is erected on the rear side (+Y direction side) of the base 10, and on the front side of the column 11, the cutting tool turning means 6 is separated from or close to the chuck table 30. A processing feed means 5 for processing and feeding in the Z-axis direction (vertical direction) is provided. The processing feed means 5 shown in FIGS. 1 and 3 includes a ball screw 50 having an axis in the Z-axis direction, a pair of guide rails 51 arranged in parallel with the ball screw 50, and a ball screw 50 connected to the upper end of the ball screw 50. Equipped with a motor 52 for rotating, a lifting plate 53 having an internal nut screwed onto the ball screw 50 and having a side part slidably contacting the guide rail 51, and a holder 54 fixed to the lifting plate 53 and holding the turning tool 6. As the motor 52 rotates the ball screw 50, the elevating plate 53 is guided by the guide rail 51 and reciprocates in the Z-axis direction, and the tool turning means 6 held by the holder 54 feeds in the Z-axis direction. be done.

バイト旋削手段６は、軸方向が鉛直方向（Ｚ軸方向）であるスピンドル６０と、スピンドル６０を回転可能に支持するハウジング６１と、スピンドル６０を回転駆動するモータ６２と、スピンドル６０の下端に接続された円形状のバイトホイール６３と、バイトホイール６３に着脱可能に装着されているバイト工具６４とを備えている。 The tool turning means 6 includes a spindle 60 whose axial direction is the vertical direction (Z-axis direction), a housing 61 that rotatably supports the spindle 60, a motor 62 that rotationally drives the spindle 60, and a lower end of the spindle 60. and a circular bite wheel 63 and a bite tool 64 detachably attached to the bite wheel 63.

図３に示すように、バイトホイール６３には、バイト工具６４が挿嵌される挿嵌孔６３０が配設されており、バイト工具６４は、挿嵌孔６３０に挿嵌され固定ボルト６３１によって固定される直方体状のシャンク６４０と、シャンク６４０の下端に尖形に形成された切り刃６４１とを備えている。切り刃６４１は、例えば、ダイヤモンド等の砥粒と所定のバインダーとを焼き固めたものである。 As shown in FIG. 3, the bite wheel 63 is provided with an insertion hole 630 into which the bite tool 64 is inserted. A rectangular parallelepiped shank 640 that is attached to the shank 640 and a sharp cutting edge 641 formed at the lower end of the shank 640 . The cutting edge 641 is made by, for example, baking abrasive grains such as diamond and a predetermined binder.

図１に示すように、ベース１０上には、ベース１０上に立設する壁部１００とコラム１１とで囲まれた凹状部分が形成されており、この凹状部分は、旋削加工時に板状ワークＷとバイト工具６４との加工点に供給される洗浄水が、チャックテーブル３０から流下するのを受け止める洗浄水収容部１０１となる。洗浄水収容部１０１には、排水口１０２が形成されており、旋削屑等を含んだ洗浄水は排水口１０２から図示しない排水タンク等へ排水される。 As shown in FIG. 1, the base 10 has a concave portion surrounded by a wall portion 100 erected on the base 10 and a column 11. This concave portion is a plate-like workpiece during turning. Washing water supplied to the machining point of W and the cutting tool 64 serves as the washing water storage portion 101 that receives the flow down from the chuck table 30 . A drain port 102 is formed in the cleaning water storage unit 101, and the cleaning water containing turning chips and the like is drained from the drain port 102 to a drain tank (not shown) or the like.

チャックテーブル３０の移動経路の上方には、旋削された板状ワークＷの厚さを測定する厚さ測定手段１７が配設されている。厚さ測定手段１７は、チャックテーブル３０を跨ぐようにベース１０上に立設された支持ブリッジ１８により支持されている。厚さ測定手段１７は、Ｚ軸方向に移動可能な直動式のリニアゲージであるが、これに限定されず、例えば、投光部と受光部とを備え非接触で板状ワークＷの厚さを測定できる反射型の光センサであってもよい。例えば、厚さ測定手段１７は、Ｘ軸方向に往復移動可能となっている。 Above the movement path of the chuck table 30, a thickness measuring means 17 for measuring the thickness of the turned plate-like workpiece W is arranged. The thickness measuring means 17 is supported by a support bridge 18 erected on the base 10 so as to straddle the chuck table 30 . The thickness measuring means 17 is a direct-acting linear gauge that can move in the Z-axis direction, but is not limited to this. It may be a reflective optical sensor that can measure the thickness. For example, the thickness measuring means 17 can reciprocate in the X-axis direction.

図２、４に示す本発明に係るチャックテーブル３０は、平面視円形の底板３０３を備えており、底板３０３の上面外周領域からは、外周環状壁３００が一体的に＋Ｚ方向に立設している。図４に示す外周環状壁３００の環状の上面３００ａにはメッキ層Ｍが所定の厚さで形成されており、外周環状壁３００は、板状ワークＷの下面Ｗｂの外周部分を、メッキ層Ｍを介して環状の上面３００ａで支持する。
また、外周環状壁３００の外側面３００ｄ及び内側面３００ｃも、メッキ層Ｍが所定の厚さで形成されている。 The chuck table 30 according to the present invention shown in FIGS. 2 and 4 includes a bottom plate 303 which is circular in plan view, and an outer peripheral annular wall 300 is integrally erected in the +Z direction from the outer peripheral region of the upper surface of the bottom plate 303 . there is A plated layer M having a predetermined thickness is formed on the annular upper surface 300a of the outer peripheral annular wall 300 shown in FIG. It is supported by the annular upper surface 300a via the .
The outer side surface 300d and the inner side surface 300c of the outer peripheral annular wall 300 are also formed with a plating layer M having a predetermined thickness.

外周環状壁３００の内側に形成された空間は、外周環状壁３００の上面３００ａより低い底面３０１ｂ（底板３０３の上面）を有する吸引凹部３０１となる。該吸引凹部３０１の底面３０１ｂには、例えば、吸引口３０１ｃが周方向に所定間隔を空けて均等に配設されている。吸引口３０１ｃの配設数は、図４に示す例においては４つとなっているが、これに限定されるものではない。
底板３０３の内部には、吸引路３０３ｄが設けられており、吸引路３０３ｄは各吸引口３０１ｃに連通すると共に、バキュームポンプやエジェクター等の真空発生装置からなる吸引源３６に連通している。 The space formed inside the outer peripheral annular wall 300 serves as a suction recess 301 having a bottom surface 301b (upper surface of the bottom plate 303) lower than the upper surface 300a of the outer peripheral annular wall 300. As shown in FIG. In the bottom surface 301b of the suction recess 301, for example, suction ports 301c are evenly arranged at predetermined intervals in the circumferential direction. The number of suction ports 301c provided is four in the example shown in FIG. 4, but is not limited to this.
A suction path 303d is provided inside the bottom plate 303. The suction path 303d communicates with each suction port 301c and also communicates with a suction source 36 comprising a vacuum generator such as a vacuum pump and an ejector.

吸引凹部３０１内には、吸引口３０１ｃを避けて底面３０１ｂに等間隔で複数支持ピン３０２が立設しており、各支持ピン３０２の上面３０２ａと外周環状壁３００の上面３００ａとは同一高さに揃えられている。また、各支持ピン３０２の上面３０２ａには、メッキ層Ｍが形成されており、外周環状壁３００の環状の上面３００ａに形成されたメッキ層Ｍと各支持ピン３０２の上面３０２ａに形成されたメッキ層Ｍとは略同一の厚さとなっている。
また、各支持ピン３０２の側面３０２ｃも、メッキ層Ｍが所定の厚さで形成されている。 Inside the suction recess 301, a plurality of support pins 302 are erected at regular intervals on the bottom surface 301b avoiding the suction port 301c, and the upper surface 302a of each support pin 302 and the upper surface 300a of the outer peripheral annular wall 300 are at the same height. are arranged in A plated layer M is formed on the upper surface 302a of each support pin 302, and the plated layer M formed on the annular upper surface 300a of the outer peripheral annular wall 300 and the plated layer M formed on the upper surface 302a of each support pin 302 are formed. It has substantially the same thickness as the layer M.
Also, the side surface 302c of each support pin 302 is formed with a plating layer M having a predetermined thickness.

例えば、外周環状壁３００と吸引凹部３０１の底面３０１ｂ（即ち、底板３０３）と支持ピン３０２とは、ファインセラミックスで構成されている。ファインセラミックスは、例えば、熱膨張係数が極めて低く、また、耐熱衝撃性及び機械的強度に優れたコージライト（２ＭｇＯ・２Ａｌ２Ｏ３・５ＳｉＯ２）である。 For example, the outer peripheral annular wall 300, the bottom surface 301b (that is, the bottom plate 303) of the suction recess 301, and the support pins 302 are made of fine ceramics. Fine ceramics is, for example, cordierite ( 2MgO.2Al.sub.2O.sub.3.5SiO.sub.2 ) which has an extremely low coefficient of thermal expansion and excellent thermal shock resistance and mechanical strength.

各支持ピン３０２は、図４に示す例においては、その外形が円柱となっているが、図５に示すように、外形が円錐台または角錐台となっている支持ピン３０４がより好ましい。支持ピン３０４の上面３０４ａと側面（斜面）３０４ｃとの間の角度は鈍角となっている。 Each support pin 302 has a cylindrical outer shape in the example shown in FIG. 4, but a support pin 304 having an outer shape of a truncated cone or a truncated pyramid as shown in FIG. 5 is more preferable. The angle between the upper surface 304a and the side surface (slope) 304c of the support pin 304 is an obtuse angle.

以下に、図５に示すチャックテーブル３０の外周環状壁３００の内側面３００ｃと外側面３００ｄと上面３００ａ及び支持ピン３０４の側面３０４ｃと上面３０４ａとに対するメッキ層Ｍの形成の一例を説明する。本実施形態においては、メッキ層Ｍは、例えば、図６に示す無電解ニッケルメッキ装置２を用いて形成される。なお、メッキ層Ｍの形成は、図６に示す無電解ニッケルメッキ装置２を用いて行う例に限定されるものではなく、形成されるメッキ層Ｍもニッケル以外の金属で構成されるものとしてもよい。 An example of forming the plating layer M on the inner side surface 300c, the outer side surface 300d, and the upper surface 300a of the outer peripheral annular wall 300 of the chuck table 30 shown in FIG. In this embodiment, the plated layer M is formed using, for example, an electroless nickel plating apparatus 2 shown in FIG. The formation of the plated layer M is not limited to the example of using the electroless nickel plating apparatus 2 shown in FIG. good.

図６に示す無電解ニッケルメッキ装置２のメッキ槽２０は、還元剤及びｐＨ調整液が含まれた硫酸ニッケル、硝酸ニッケル、又はスルファミン酸ニッケル等のニッケルメッキ液を蓄えている。メッキ槽２０は、恒温水槽２１中に配設されており、ニッケルメッキ液の温度調整が可能となっている。
メッキ槽２０には、タンクＡから金属ニッケルが、タンクＢから還元剤が、タンクＣからｐＨ調整液が、各定量ポンプＡ１、Ｂ１、及びＣ１によって補充可能となっている。 A plating bath 20 of the electroless nickel plating apparatus 2 shown in FIG. 6 stores a nickel plating solution such as nickel sulfate, nickel nitrate, or nickel sulfamate containing a reducing agent and a pH adjusting solution. The plating tank 20 is arranged in a constant temperature water tank 21, and the temperature of the nickel plating solution can be adjusted.
The plating tank 20 can be replenished with metallic nickel from the tank A, a reducing agent from the tank B, and a pH adjusting liquid from the tank C by respective metering pumps A1, B1, and C1.

メッキ槽２０内のニッケルメッキ液は、無電解メッキ反応が起こると、液中で還元剤の電子による金属イオンの還元析出が起こり、液中のニッケル濃度、還元剤濃度、及びｐＨ値が変化する。チャックテーブル３０に均一な厚さのメッキ層Ｍを形成するためには、これらのパラメータを長時間一定範囲内に保つ必要があり、無電解ニッケルメッキ装置２はそのための検知部２７を備えている。 When the electroless plating reaction occurs in the nickel plating solution in the plating bath 20, reduction deposition of metal ions occurs due to the electrons of the reducing agent in the solution, and the nickel concentration, the reducing agent concentration and the pH value in the solution change. . In order to form a plated layer M of uniform thickness on the chuck table 30, it is necessary to keep these parameters within a certain range for a long time, and the electroless nickel plating apparatus 2 is equipped with the detector 27 for that purpose. .

検知部２７は、例えば、メッキコントローラー２７０とメッキ槽２０内から採られた検査液を所定温度（検査温度）まで冷やす水槽２７１とを備えている。
図示しないポンプにより、メッキ槽２０内から採られた検査液は、流路２７２を通り、水槽２７１内で所定温度まで下げられた後、メッキコントローラー２７０に送り込まれる。
メッキコントローラー２７０は、検査液のニッケル濃度を比色計で、ｐＨ値をｐＨ計で連続測定して、各値が設定値を外れると各定量ポンプＡ１、Ｂ１、及びＣ１に配線２７４を介して信号を送る。そして、各定量ポンプＡ１、Ｂ１、及びＣ１が作動して、金属ニッケル、還元剤、又はｐＨ調整液を所定量ずつメッキ槽２０に補給して、メッキ槽２０内のニッケルメッキ液のパラメータ調整を行う。また、メッキ槽２０内のニッケルメッキ液の各数値が設定値に戻ると、メッキコントローラー２７０より各定量ポンプＡ１、Ｂ１、及びＣ１に停止信号が送られ、自動的に補給が停止される。 The detection unit 27 includes, for example, a plating controller 270 and a water tank 271 for cooling the test solution taken from the plating bath 20 to a predetermined temperature (test temperature).
A test solution taken from the plating tank 20 by a pump (not shown) passes through the flow path 272 and is sent to the plating controller 270 after being lowered to a predetermined temperature in the water tank 271 .
The plating controller 270 continuously measures the nickel concentration of the test solution with a colorimeter and the pH value with a pH meter. send a signal. Then, the metering pumps A1, B1, and C1 are actuated to replenish the plating tank 20 with a predetermined amount of metallic nickel, reducing agent, or pH adjusting liquid, and to adjust the parameters of the nickel plating solution in the plating tank 20. conduct. Also, when each numerical value of the nickel plating solution in the plating bath 20 returns to the set value, the plating controller 270 sends a stop signal to each of the metering pumps A1, B1, and C1 to automatically stop replenishment.

メッキ槽２０内のニッケルメッキ液は、モータ等の回転駆動源２２０がファン２２１を回転させて攪拌されることで、全体の濃度が均一化される。
メッキ槽２０内には、膜厚モニター２５に電気的に接続される測定センサー２５０が浸されている。膜厚モニター２５は、測定センサー２５０により、被メッキ物のメッキ層の厚さ及びメッキ速度を測定可能であり、例えば、その原理は測定センサー２５０のセンサーヘッドに装着された水晶振動子の発信周波数が、振動子上にメッキ層が析出するにつれて減衰してゆくことを利用したものである。膜厚モニター２５は、この発信周波数の減衰速度からメッキ速度及び被メッキ物のメッキ層の厚さを換算して表示するようになっている。 The nickel plating solution in the plating tank 20 is agitated by rotating a fan 221 with a rotary driving source 220 such as a motor, so that the concentration of the entire nickel plating solution is made uniform.
A measurement sensor 250 electrically connected to the film thickness monitor 25 is immersed in the plating bath 20 . The film thickness monitor 25 can measure the thickness of the plating layer of the object to be plated and the plating speed by means of the measurement sensor 250. For example, the principle is However, it utilizes the fact that the vibration is attenuated as the plated layer is deposited on the vibrator. The film thickness monitor 25 converts the rate of attenuation of the transmission frequency into the plating rate and the thickness of the plated layer of the object to be plated and displays them.

上記のように構成される無電解ニッケルメッキ装置２を用いて、図５に示すチャックテーブル３０の外周環状壁３００の内側面３００ｃと外側面３００ｄと上面３００ａ及び支持ピン３０４の側面３０４ｃと上面３０４ａとに対するメッキ層Ｍを形成する場合には、例えば、図５に示すチャックテーブル３０の各吸引口３０１ｃに、吸引路３０３ｄ内へのニッケルメッキ液の進入を防ぐマスクを施す。 Using the electroless nickel plating apparatus 2 configured as described above, the inner surface 300c, the outer surface 300d and the upper surface 300a of the outer peripheral annular wall 300 of the chuck table 30 shown in FIG. In the case of forming the plating layer M for , for example, each suction port 301c of the chuck table 30 shown in FIG.

そして、図５に示すチャックテーブル３０を支持ピン３０４の上面３０４ａ側から図６に示すメッキ槽２０内のニッケルメッキ液に浸漬させる。なお、少なくともチャックテーブル３０の下面３０５は、ニッケルメッキ液から出ている状態となる。また、例えば、図５に示すチャックテーブル３０の仮想線Ｌ１よりも上側の部分（底面３０１ｂよりも上側の部分）のみをニッケルメッキ液に浸漬させてもよい。この場合には、吸引口３０１ｃのマスクは不要であり、外周環状壁３００の外側面３００ｄは仮想線Ｌ１よりも上側の部分のみにメッキ層Ｍが形成される。 Then, the chuck table 30 shown in FIG. 5 is immersed in the nickel plating solution in the plating tank 20 shown in FIG. At least the lower surface 305 of the chuck table 30 is exposed from the nickel plating solution. Further, for example, only the portion above the imaginary line L1 (the portion above the bottom surface 301b) of the chuck table 30 shown in FIG. 5 may be immersed in the nickel plating solution. In this case, the mask for the suction port 301c is not required, and the plated layer M is formed only on the portion of the outer side surface 300d of the outer peripheral annular wall 300 above the imaginary line L1.

ニッケルメッキ液中の還元剤からの電子によって、図５に示すチャックテーブル３０の外周環状壁３００の内側面３００ｃと外側面３００ｄと上面３００ａ及び支持ピン３０４の側面３０４ｃと上面３０４ａに、ニッケルイオンが均一な厚さで還元析出する。そして、先に説明したように、図６に示す検知部２７によるニッケルメッキ液の各パラメータの調整、ニッケルメッキ液の温度調整（例えば、約７０℃に保つ）、及び膜厚モニター２５によるメッキ層Ｍの厚さ監視が行われつつ、所定時間（例えば、２日間）無電解ニッケルメッキを行い、図５に示す所定の厚さ（例えば、２００μｍ）のメッキ層Ｍを形成する。
なお、ニッケルメッキ液の温度を従来のように例えば９０度に保ちつつメッキ層Ｍの形成を行うと、チャックテーブル３０の熱変形が起こり得るため、本実施形態のようにニッケルメッキ液の温度を約７０℃に保つと好ましい。 Electrons from the reducing agent in the nickel plating solution form nickel ions on the inner side surface 300c, the outer side surface 300d, and the upper surface 300a of the outer peripheral annular wall 300 of the chuck table 30 shown in FIG. Reduced deposition with uniform thickness. Then, as described above, each parameter of the nickel plating solution is adjusted by the detector 27 shown in FIG. While monitoring the thickness of M, electroless nickel plating is performed for a predetermined time (for example, two days) to form a plating layer M having a predetermined thickness (for example, 200 μm) shown in FIG.
If the plating layer M is formed while the temperature of the nickel plating solution is maintained at, for example, 90 degrees as in the conventional art, thermal deformation of the chuck table 30 may occur. It is preferably kept at about 70°C.

以下に、図１、図２、及び図７を用いて、図７に示すチャックテーブル３０（例えば、無電解ニッケルメッキ装置２から搬出されたチャックテーブル３０）のメッキ層Ｍを旋削して、チャックテーブル３０に平坦な保持面を形成する場合について説明する。
例えば、図２に示すＹ軸移動手段１４が、加工装置１にセットされたチャックテーブル３０を図１に示すバイト旋削手段６の真下より少し＋Ｙ方向の位置まで移動させることで、チャックテーブル３０が旋削送りの開始位置に位置付けられる。 1, 2, and 7, the plated layer M of the chuck table 30 shown in FIG. A case of forming a flat holding surface on the table 30 will be described.
For example, the Y-axis moving means 14 shown in FIG. 2 moves the chuck table 30 set in the processing apparatus 1 to a position in the +Y direction slightly below the cutting tool turning means 6 shown in FIG. Positioned at the starting position of the turning feed.

バイト旋削手段６が加工送り手段５により－Ｚ方向へと送られ、図７に示すように、バイト工具６４の最下端となる切り刃６４１が支持ピン３０４の上面３０４ａに形成されたメッキ層Ｍ及び外周環状壁３００の上面３００ａに形成されたメッキ層Ｍに所定量（例えば、数μｍ）切り込む高さ位置にバイト旋削手段６が位置付けられる。さらに、モータ６２が＋Ｚ方向から見て時計回り方向にスピンドル６０を所定の回転速度で回転させ、これに伴って、バイト工具６４がスピンドル６０を軸に時計回り方向に所定の回転速度で周回する。 The cutting tool turning means 6 is sent in the -Z direction by the processing feeding means 5, and as shown in FIG. And the turning tool 6 is positioned at a height position where it cuts a predetermined amount (for example, several μm) into the plated layer M formed on the upper surface 300 a of the outer peripheral annular wall 300 . Further, the motor 62 rotates the spindle 60 clockwise at a predetermined rotational speed when viewed from the +Z direction, and accordingly the cutting tool 64 rotates clockwise around the spindle 60 at a predetermined rotational speed. .

図２に示すＹ軸移動手段１４が、チャックテーブル３０を－Ｙ方向に移動させることで、図７に示すように、バイト工具６４が外周環状壁３００の上面３００ａに形成されたメッキ層Ｍ、次いで、支持ピン３０４の上面３０４ａに形成されたメッキ層Ｍを旋削して平坦化していき、各支持ピン３０４の上面３０４ａに形成されたメッキ層Ｍの高さと外周環状壁３００の上面３００ａに形成されたメッキ層Ｍの高さとが揃えられていく。そして、チャックテーブル３０に各支持ピン３０４の上面３０４ａと外周環状壁３００の上面３００ａとからなる面一で平坦な保持面３０６（図８参照）が形成される。 The Y-axis moving means 14 shown in FIG. 2 moves the chuck table 30 in the -Y direction, and as shown in FIG. Next, the plated layer M formed on the upper surface 304a of the support pin 304 is turned and flattened, and the height of the plated layer M formed on the upper surface 304a of each support pin 304 and the upper surface 300a of the outer peripheral annular wall 300 are formed. The height of the plated layer M thus formed is aligned. A flush and flat holding surface 306 (see FIG. 8) is formed on the chuck table 30 by the upper surface 304 a of each support pin 304 and the upper surface 300 a of the outer peripheral annular wall 300 .

本発明に係るチャックテーブル３０は、外周環状壁３００の上面３００ａと支持ピン３０４の上面３０４ａとが同一高さであり、外周環状壁３００の内側面３００ｃ及び外側面３００ｄと上面３００ａ及び支持ピン３０４の側面３０４ｃと上面３０４ａとにメッキ層Ｍを形成しているため、メッキ層Ｍをバイト工具６４で旋削加工したときに、上面３００ａと上面３０４ａとに形成されたメッキ層Ｍが、内側面３００ｃ及び外側面３００ｄと側面３０４ｃに一体的に形成されたメッキ層Ｍにより補強されていることで剥がれにくくなっている。 In the chuck table 30 according to the present invention, the upper surface 300a of the outer peripheral annular wall 300 and the upper surface 304a of the support pins 304 are at the same height, and the inner surface 300c and the outer surface 300d of the outer peripheral annular wall 300 and the upper surface 300a and the support pins 304 are at the same height. Since the plating layer M is formed on the side surface 304c and the upper surface 304a of the inner surface 300c, when the plating layer M is turned by the cutting tool 64, the plating layer M formed on the upper surface 300a In addition, the plated layer M integrally formed on the outer side surface 300d and the side surface 304c is reinforced, so that it is difficult to peel off.

また、図５、７に示すように、支持ピン３０４が、上面３０４ａを有する円錐台または角錐台で吸引凹部３０１の底面３０１ｂから立設されることで、支持ピン３０４の上面３０４ａと側面（斜面）３０４ｃとの間の角度が鈍角になるため、メッキ層Ｍをより剥がれ難くすることができる。 As shown in FIGS. 5 and 7, the support pin 304 is a truncated cone or truncated pyramid having an upper surface 304a and stands from the bottom surface 301b of the suction recess 301, so that the upper surface 304a of the support pin 304 and the side surface (inclined ) 304c becomes an obtuse angle, the plating layer M can be made more difficult to peel off.

以下に、図１に示す加工装置１と図８に示す平坦な保持面３０６を備えたチャックテーブル３０とを用いて板状ワークＷを旋削する場合について説明する。
まず、図１に示す板状ワークＷが載置されていない状態のチャックテーブル３０が、第一の搬送手段３３５の近傍まで移動する。ロボット３３０が第一のカセット３３１から一枚の板状ワークＷを引き出し、板状ワークＷを仮置きテーブル３３３ａに移動させる。 A case of turning a plate-like work W using the processing apparatus 1 shown in FIG. 1 and the chuck table 30 having a flat holding surface 306 shown in FIG. 8 will be described below.
First, the chuck table 30 shown in FIG. The robot 330 pulls out one plate-like work W from the first cassette 331 and moves the plate-like work W to the temporary placement table 333a.

位置合わせ手段３３３ｂにより板状ワークＷが仮置きテーブル３３３ａ上でセンタリングされた後、第一の搬送手段３３５が、センタリングされた板状ワークＷをチャックテーブル３０上に移動させる。そして、図８に示すように、チャックテーブル３０の中心と板状ワークＷの中心とが略合致するように、板状ワークＷが平坦な保持面３０６上に載置される。このように板状ワークＷがチャックテーブル３０上に載置されると、板状ワークＷの下面Ｗｂは各支持ピン３０４によってメッキ層Ｍを介して支持されるとともに、板状ワークＷの下面Ｗｂの外周部分が、外周環状壁３００の上面３００ａ上でメッキ層Ｍを介して支持された状態になる。 After the plate-like work W is centered on the temporary placement table 333 a by the positioning means 333 b , the first conveying means 335 moves the centered plate-like work W onto the chuck table 30 . Then, as shown in FIG. 8, the plate-like work W is placed on the flat holding surface 306 so that the center of the chuck table 30 and the center of the plate-like work W substantially coincide with each other. When the plate-like work W is placed on the chuck table 30 in this way, the lower surface Wb of the plate-like work W is supported by the support pins 304 via the plating layer M, and the lower surface Wb of the plate-like work W is supported by the support pins 304 . is supported on the upper surface 300a of the outer peripheral annular wall 300 via the plated layer M.

そして、吸引源３６が作動して生み出された吸引力が、吸引路３０３ｄ及び吸引口３０１ｃを通り吸引凹部３０１に伝達されることにより、チャックテーブル３０が保持面３０６上で板状ワークＷを吸引保持する。なお、保持面３０６は、先のメッキ層Ｍの旋削によって平坦面となっているため、チャックテーブル３０はバキュームリークを発生させない。 The suction force generated by the operation of the suction source 36 is transmitted to the suction recess 301 through the suction path 303d and the suction port 301c, whereby the chuck table 30 sucks the plate-like workpiece W on the holding surface 306. Hold. Since the holding surface 306 is a flat surface due to the previous turning of the plated layer M, the chuck table 30 does not generate vacuum leaks.

例えば、図２に示すＹ軸移動手段１４が、板状ワークＷを吸引保持したチャックテーブル３０をバイト旋削手段６の真下より少し＋Ｙ方向の位置まで移動させることで、チャックテーブル３０が旋削送りの開始位置に位置付けられる。
バイト旋削手段６が加工送り手段５により－Ｚ方向へと送られ、図８に示すように、バイト工具６４の最下端となる切り刃６４１が板状ワークＷの上面Ｗａに所定量切り込む高さ位置にバイト旋削手段６が位置付けられる。さらに、モータ６２が＋Ｚ方向から見て時計回り方向にスピンドル６０を所定の回転速度で回転させ、これに伴って、バイト工具６４がスピンドル６０を軸に時計回り方向に所定の回転速度で周回する。 For example, the Y-axis moving means 14 shown in FIG. 2 moves the chuck table 30 sucking and holding the plate-shaped work W to a position slightly below the cutting tool turning means 6 in the +Y direction. Positioned at the start position.
The tool turning means 6 is sent in the -Z direction by the processing feed means 5, and as shown in FIG. A tool turning means 6 is positioned at the position. Further, the motor 62 rotates the spindle 60 clockwise at a predetermined rotational speed when viewed from the +Z direction, and accordingly the cutting tool 64 rotates clockwise around the spindle 60 at a predetermined rotational speed. .

板状ワークＷを吸引保持したチャックテーブル３０が所定の送り速度で－Ｙ方向に移動していき、図８に示すように、バイト工具６４が板状ワークＷの上面Ｗａを旋削して平坦化していく。また、図１に示す厚さ測定手段１７が下降して、板状ワークＷの旋削された上面Ｗａに接触して板状ワークＷの厚さを測定する。
そして、Ｙ軸方向の所定の位置までチャックテーブル３０が－Ｙ方向に移動し、周回するバイト工具６４により板状ワークＷの上面Ｗａ全面が平坦面になるように旋削される。 The chuck table 30 sucking and holding the plate-like work W moves at a predetermined feed rate in the -Y direction, and as shown in FIG. To go. Further, the thickness measuring means 17 shown in FIG. 1 descends and contacts the lathe-turned upper surface Wa of the plate-like work W to measure the thickness of the plate-like work W. As shown in FIG.
Then, the chuck table 30 moves in the -Y direction to a predetermined position in the Y-axis direction, and the revolving cutting tool 64 turns the entire upper surface Wa of the plate-like work W so that it becomes a flat surface.

本発明に係るチャックテーブル３０は、チャックテーブル３０の外周環状壁３００と吸引凹部３０１と各支持ピン３０４とをファインセラミックスで構成し、メッキ層Ｍは無電解ニッケルメッキで形成することで、チャックテーブル３０は、旋削加工する際の加工熱による熱変形がほとんど起こらなくなるため、保持した板状ワークＷを平坦な保持面３０６（各支持ピン３０４の上面３０４ａと外周環状壁３００の上面３００ａ）で保持しつつ均一な厚さに旋削加工することができる。 In the chuck table 30 according to the present invention, the outer peripheral annular wall 300 of the chuck table 30, the suction recesses 301, and the support pins 304 are made of fine ceramics, and the plating layer M is made of electroless nickel plating. 30 hardly causes thermal deformation due to processing heat during turning, so that the held plate-like workpiece W is held by a flat holding surface 306 (the upper surface 304a of each support pin 304 and the upper surface 300a of the outer peripheral annular wall 300). It is possible to perform turning processing to a uniform thickness while maintaining the thickness.

Ｗ：板状ワーク Ｗａ：板状ワークの上面 Ｗｂ：板状ワークの下面
１：加工装置 １０：ベース １１：コラム １９：入力手段
１４：Ｙ軸移動手段 １７：厚さ測定手段 １８：支持ブリッジ
３３０：ロボット ３３１：第一のカセット ３３２：第二のカセット
３３３ａ：仮置きテーブル ３３３ｂ：位置合わせ手段 ３３４：洗浄手段
３３５：第一の搬送手段 ３３６：第二の搬送手段
３０：チャックテーブル ３００：外周環状壁 ３０１：吸引凹部 ３０１ｃ：吸引口 ３０２：円柱状の支持ピン ３０４：円錐台または角錐台の支持ピン
３４：回転手段 ３６：吸引源
５：加工送り手段 ６：バイト旋削手段 ６４：バイト工具 W: plate-shaped work Wa: upper surface of plate-shaped work Wb: lower surface of plate-shaped work 1: processing device 10: base 11: column 19: input means 14: Y-axis movement means 17: thickness measurement means 18: support bridge 330 : robot 331: first cassette 332: second cassette 333a: temporary placement table 333b: positioning means 334: cleaning means 335: first transfer means 336: second transfer means 30: chuck table 300: outer circumference annular Wall 301: Suction recess 301c: Suction port 302: Cylindrical support pin 304: Support pin of truncated cone or truncated pyramid 34: Rotation means 36: Suction source 5: Machining feed means 6: Bit turning means 64: Bit tool

Claims (3)

板状ワークの下面を吸引保持して上面をバイト工具で旋削加工する加工装置に用いられるチャックテーブルであって、
該板状ワークの下面の外周部分を環状の上面で支持する外周環状壁と、該外周環状壁の内側に形成され該外周環状壁の上面より低い底面を有する吸引凹部と、該吸引凹部の該底面に形成され吸引源に連通する吸引口と、該吸引口を避けて該底面に等間隔で複数立設され該外周環状壁の上面と上面が同一高さである支持ピンとを備え、該外周環状壁の側面と上面及び該支持ピンの側面と上面とにメッキ層が形成されたチャックテーブル。 A chuck table for use in a processing device that sucks and holds the lower surface of a plate-shaped work and turns the upper surface with a cutting tool,
an outer peripheral annular wall that supports an outer peripheral portion of the lower surface of the plate-shaped work on an annular upper surface; a suction recess that is formed inside the outer peripheral annular wall and has a bottom surface that is lower than the upper surface of the outer peripheral annular wall; a suction port formed in a bottom surface communicating with a suction source; and a plurality of support pins erected on the bottom surface at equal intervals avoiding the suction port and having the same height as the upper surface of the outer peripheral annular wall, the outer periphery A chuck table in which a plated layer is formed on the side and top surfaces of an annular wall and the side and top surfaces of the support pins. 前記外周環状壁と前記吸引凹部と前記支持ピンとをファインセラミックスで構成し、前記メッキ層は無電解ニッケルメッキで形成した請求項１記載のチャックテーブル。 2. A chuck table according to claim 1, wherein said outer peripheral annular wall, said suction recesses and said support pins are made of fine ceramics, and said plated layer is formed by electroless nickel plating. 前記支持ピンは、前記上面を有する円錐台または角錐台で前記底面から立設される請求項１又は２記載のチャックテーブル。 3. The chuck table according to claim 1, wherein said support pin is a truncated cone or a truncated pyramid having said upper surface and is erected from said bottom surface.
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