CN110534471B - Chuck workbench - Google Patents

Chuck workbench Download PDF

Info

Publication number
CN110534471B
CN110534471B CN201910434221.2A CN201910434221A CN110534471B CN 110534471 B CN110534471 B CN 110534471B CN 201910434221 A CN201910434221 A CN 201910434221A CN 110534471 B CN110534471 B CN 110534471B
Authority
CN
China
Prior art keywords
chuck table
annular wall
plate
workpiece
suction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910434221.2A
Other languages
Chinese (zh)
Other versions
CN110534471A (en
Inventor
森俊
波冈伸一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of CN110534471A publication Critical patent/CN110534471A/en
Application granted granted Critical
Publication of CN110534471B publication Critical patent/CN110534471B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemically Coating (AREA)
  • Jigs For Machine Tools (AREA)
  • Milling, Broaching, Filing, Reaming, And Others (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Gripping On Spindles (AREA)
  • Dicing (AREA)

Abstract

A chuck table is provided. In the pin chuck table, a plating layer which is not peeled off during turning is formed on a material which is not likely to be thermally deformed. A chuck table (30) used in a machining device (1) for performing a turning process on an upper surface (Wa) by a tool (64) while sucking and holding a lower surface (Wb) of a plate-like workpiece (W) comprises: an outer peripheral annular wall (300) that supports an outer peripheral portion of the lower surface of the plate-like workpiece by an annular upper surface (300 a); a suction concave part (301) formed inside the outer circumferential annular wall (300) and having a bottom surface (301 b) lower than the upper surface of the outer circumferential annular wall; a suction port (301 c) formed on the bottom surface of the suction recess (301) and communicating with a suction source (36); and a plurality of support pins (304) which are erected on the bottom surface (301 b) at equal intervals so as to avoid the suction openings, wherein the upper surface (304 a) of the support pins and the upper surface (300 a) of the outer circumferential annular wall (300) are at the same height, and plating layers (M) are formed on the side surfaces (300 c, 300 d) and the upper surface (300 a) of the outer circumferential annular wall and on the side surfaces (304 c) and the upper surface (304 a) of the support pins (304).

Description

Chuck workbench
Technical Field
The present invention relates to a chuck table for holding a plate-like workpiece.
Background
A chuck table used in a machining apparatus for turning a plate-like workpiece with a tool includes, for example: an outer peripheral annular holding portion formed on the outer peripheral side; a suction concave portion formed inside the outer circumferential annular holding portion and communicating with the suction unit; and a plurality of support pins formed in the suction recess (for example, refer to patent document 1). The chuck table having such a configuration supports the plate-like workpiece by the plurality of support pins, and since the support area of the support pins is small, foreign matter such as dust is not interposed between the support pins and the plate-like workpiece, and the plate-like workpiece can be held flat.
Patent document 1: japanese patent laid-open publication No. 2005-333067
The chuck table is mechanically deformed by the aged change, and the upper surface of the support pin is finely displaced. Therefore, the upper surface of the chuck table (the upper surface of the outer circumferential annular holding portion and the upper surface of each support pin) is turned by the cutter tool, so that the heights of the support pins are uniform.
Here, in order to facilitate turning of the upper surface of the support pin by a tool, a plating layer of nickel or the like having a thickness of about 200 μm is formed on the upper surface of the support pin. The plated layer was turned periodically every several μm to make the heights of the support pins uniform.
When turning the plating layer by the tool as described above, there are the following problems: the coating is peeled off by applying a force to the coating. In addition, plating is suitably performed in order to form a plating layer having a thickness of 200 μm, but a material capable of being plated is likely to be thermally deformed. Therefore, when each part of the chuck table is formed of a material capable of being plated, there is a problem as follows: the support pins and the like are thermally deformed by the processing heat generated during turning of the tool, and the held plate-like workpiece cannot be made uniform in thickness.
Accordingly, there is a problem that a plating layer which is not peeled off during turning is formed on a material which is less likely to be thermally deformed in the pin chuck table.
Disclosure of Invention
The invention aims to provide a chuck workbench for holding a plate-shaped workpiece, which is used for forming a plating layer which is not peeled off during turning on a material which is not easy to generate thermal deformation.
The present invention for solving the above-described problems is a chuck table for use in a machining apparatus for performing suction holding of a lower surface of a plate-like workpiece and turning of an upper surface of the plate-like workpiece with a tool, the chuck table comprising: an outer peripheral annular wall that supports an outer peripheral portion of a lower surface of the plate-like workpiece with an annular upper surface; a suction concave portion formed inside the outer circumferential annular wall and having a bottom surface lower than an upper surface of the outer circumferential annular wall; a suction port formed on the bottom surface of the suction recess and communicating with a suction source; and a plurality of support pins standing on the bottom surface at equal intervals so as to avoid the suction port, wherein the upper surface of the support pins and the upper surface of the outer circumferential annular wall are at the same height, and plating layers are formed on the side surfaces and the upper surface of the outer circumferential annular wall and the side surfaces and the upper surface of the support pins.
Preferably, the outer circumferential annular wall, the suction recess, and the support pin are made of fine ceramics, and the plating layer is formed by electroless nickel plating.
Preferably, the support pin is erected from the bottom surface in a truncated cone or truncated pyramid having the upper surface.
In the chuck table according to the present invention, since the upper surface of the outer circumferential annular wall and the upper surface of the support pin are at the same height, and the plating layer is formed on the side surface and the upper surface of the outer circumferential annular wall and the side surface and the upper surface of the support pin, the plating layer is not easily peeled off when the plating layer is turned by the tool.
Further, since the outer peripheral annular wall, the suction concave portion, and the support pin of the chuck table are made of fine ceramics and the plating layer is formed by electroless nickel plating, the chuck table is less likely to be thermally deformed by the processing heat at the time of turning, and therefore the held plate-like workpiece can be turned to a uniform thickness.
The support pin is erected from the bottom surface of the suction concave portion in a truncated cone or truncated pyramid having the upper surface, and the angle between the upper surface and the side surface (inclined surface) of the support pin is an obtuse angle, so that the plating layer can be less likely to be peeled off.
Drawings
Fig. 1 is a perspective view showing an example of a machining apparatus provided with a chuck table according to the present invention.
Fig. 2 is a perspective view showing an example of the chuck table and the Y-axis direction moving unit.
Fig. 3 is a perspective view showing an example of the turning unit.
Fig. 4 is a cross-sectional view showing an example of a chuck table in which the support pins have a cylindrical shape.
Fig. 5 is a cross-sectional view showing another example of the chuck table in which the support pin has a truncated cone shape or a truncated pyramid shape.
Fig. 6 is an explanatory view showing an example of the electroless nickel plating apparatus.
Fig. 7 is a cross-sectional view showing a state in which a plating layer of a chuck table is turned to form a flat holding surface.
Fig. 8 is a cross-sectional view illustrating a state in which turning is performed on a plate-like workpiece held on a flat holding surface of a chuck table.
Description of the reference numerals
W: a plate-like work; wa: the upper surface of the plate-shaped workpiece; wb: the lower surface of the plate-shaped workpiece; 1: a processing device; 10: a base; 11: a column; 19: an input unit; 14: a Y-axis moving unit; 17: a thickness measuring unit; 18: a support bridge; 330: a robot; 331: a first cartridge; 332: a second case; 333a: temporarily placing the workbench; 333b: an alignment unit; 334: a cleaning unit; 335: a first conveying unit; 336: a second conveying unit; 30: a chuck table; 300: a peripheral annular wall; 301: a suction concave portion; 301c: a suction port; 302: a cylindrical support pin; 304: support pins of truncated cones or truncated pyramids; 34: a rotating unit; 36: a suction source; 5: a processing feeding unit; 6: a cutter turning unit; 64: a cutter tool.
Detailed Description
The machining apparatus 1 shown in fig. 1 is an apparatus for turning a plate-like workpiece W held on a chuck table 30 according to the present invention by a tool turning unit 6 having a tool 64. The front side (-Y direction side) on the base 10 of the machining device 1 serves as a region for loading and unloading the plate-like workpiece W to and from the chuck table 30, and the rear side (+y direction side) on the base 10 serves as a region for turning the plate-like workpiece W held on the chuck table 30 by the tool turning unit 6.
The plate-like workpiece W shown in fig. 1 is, for example, a semiconductor wafer having a circular outer shape and made of silicon as a base material, but is not limited thereto. The upper surface Wa of the plate-like workpiece W serves as a machined surface by turning. The lower surface Wb of the plate-like workpiece W is protected by a protective tape, not shown, being pasted.
An input unit 19 for inputting processing conditions and the like by an operator is disposed on the front side of the base 10 of the processing apparatus 1. Further, a front side of the base 10 is provided with: a first box 331 for accommodating a plate-like workpiece W before turning; and a second cassette 332 that accommodates the turning-finished plate-like workpiece W. A robot 330 is disposed between the first cassette 331 and the second cassette 332, and the robot 330 carries out the plate-shaped workpiece W before turning from the first cassette 331 and carries in the plate-shaped workpiece W after turning into the second cassette 332.
A temporary table 333a for temporarily placing the plate-like workpiece W before processing is provided in the movable area of the robot 330, and an alignment unit 333b is disposed on the temporary table 333a. The alignment unit 333b aligns (centers) the plate-like workpiece W carried out of the first cassette 331 and placed on the temporary placement table 333a at a predetermined position by using an alignment pin having a reduced diameter.
A cleaning unit 334 for cleaning the turning-completed plate-shaped workpiece W is disposed in the movable region of the robot 330. The cleaning unit 334 is, for example, a one-piece rotary cleaning device.
A first conveying unit 335 is disposed near the alignment unit 333b, and a second conveying unit 336 is disposed near the cleaning unit 334. The first conveying means 335 conveys the plate-shaped workpiece W before the centering and turning carried on the temporary setting table 333a to the chuck table 30, and the second conveying means 336 conveys the plate-shaped workpiece W after the turning carried on the chuck table 30 to the cleaning means 334.
As shown in fig. 2, the periphery of the chuck table 30 is surrounded by a cover 39 movable together with the chuck table 30, and the chuck table 30 can be rotated about the axis in the Z-axis direction by a rotation unit 34 disposed below the chuck table 30.
As shown in fig. 1 and 2, the Y-axis moving means 14 for moving the chuck table 30 in the Y-axis direction is disposed below the chuck table 30, the cover 39, and the bellows cover 39a connected to the cover 39. The Y-axis moving unit 14 shown in fig. 2 has: a ball screw 140 having an axis in the Y-axis direction; a pair of guide rails 141 disposed parallel to the ball screw 140; a motor 142 coupled to the ball screw 140 to rotate the ball screw 140; and a movable plate 143 having a nut screwed into the ball screw 140, wherein a bottom of the movable plate 143 slides on the guide rail 141, and when the ball screw 140 is rotated by the motor 142, the movable plate 143 is guided by the guide rail 141 to move in the Y-axis direction, and the chuck table 30 and the cover 39 disposed on the movable plate 143 via the rotation unit 34 move in the Y-axis direction. The bellows 39a expands and contracts in the Y-axis direction according to the movement of the chuck table 30.
As shown in fig. 1, a post 11 is erected on a rear side (+y direction side) of the base 10, and a machining feed unit 5 is disposed on a front surface of the post 11, and the machining feed unit 5 performs machining feed in a Z axis direction (vertical direction) in which the tool turning unit 6 is away from or approaching the chuck table 30. The machining feed unit 5 shown in fig. 1 and 3 includes: a ball screw 50 having an axis in the Z-axis direction; a pair of guide rails 51 disposed parallel to the ball screw 50; a motor 52 connected to an upper end of the ball screw 50 to rotate the ball screw 50; a lifting plate 53, the nut inside of which is screwed with the ball screw 50, and the side of the lifting plate 53 is in sliding contact with the guide rail 51; and a holder 54 fixed to the lifting plate 53 for holding the tool turning unit 6, wherein the lifting plate 53 is guided by the guide rail 51 to reciprocate in the Z-axis direction as the ball screw 50 is rotated by the motor 52, and the tool turning unit 6 held by the holder 54 performs machining feed in the Z-axis direction.
The tool turning unit 6 has: a spindle 60 whose axial direction is a vertical direction (Z-axis direction); a housing 61 rotatably supporting the spindle 60; a motor 62 for rotationally driving the spindle 60; a round cutter grinding wheel 63 connected to the lower end of the spindle 60; and a cutter tool 64 detachably attached to the cutter grinding wheel 63.
As shown in fig. 3, an insertion hole 630 into which the cutter tool 64 is inserted is provided in the cutter grinding wheel 63, and the cutter tool 64 includes: a rectangular parallelepiped handle 640 inserted into the insertion hole 630 and fixed by a fixing bolt 631; and a cutting edge 641, which is formed in a pointed shape at the lower end of the handle 640. The cutting edge 641 is obtained by, for example, sintering abrasive grains such as diamond and a predetermined binder.
As shown in fig. 1, a recessed portion surrounded by a wall portion 100 and a column 11 erected on the base 10 is formed on the base 10, and the recessed portion serves as a cleaning water receiving portion 101, and the cleaning water receiving portion 101 receives cleaning water flowing down from the chuck table 30, which is supplied to the machining points of the plate-like workpiece W and the tool 64 at the time of turning. A drain port 102 is formed in the cleaning water storage portion 101, and cleaning water including turning scraps is discharged from the drain port 102 to a drain container or the like, not shown.
A thickness measuring unit 17 for measuring the thickness of the plate-like workpiece W after turning is disposed above the moving path of the chuck table 30. The thickness measuring unit 17 is supported by a support bridge 18, and the support bridge 18 is erected on the base 10 so as to span the chuck table 30. The thickness measuring unit 17 is a linear measuring instrument of a direct-acting type that can move in the Z-axis direction, but is not limited thereto, and may be a reflective type optical sensor having a light projecting portion and a light receiving portion, for example, and capable of measuring the thickness of the plate-like workpiece W in a noncontact manner. For example, the thickness measuring unit 17 can reciprocate in the X-axis direction.
The chuck table 30 of the present invention shown in fig. 2 and 4 has a circular bottom plate 303 in a plan view, and an outer peripheral annular wall 300 is integrally provided to stand in the +z direction from an upper surface outer peripheral region of the bottom plate 303. A plating layer M is formed to a predetermined thickness on the annular upper surface 300a of the outer peripheral annular wall 300 shown in fig. 4, and the outer peripheral annular wall 300 supports the outer peripheral portion of the lower surface Wb of the plate-like workpiece W with the annular upper surface 300a interposed therebetween.
The plating layer M is also formed to a predetermined thickness on the outer surface 300d and the inner surface 300c of the outer circumferential annular wall 300.
The space formed inside the outer peripheral annular wall 300 becomes a suction concave portion 301 having a bottom surface 301b (upper surface of the bottom plate 303) lower than the upper surface 300a of the outer peripheral annular wall 300. The suction ports 301c are equally arranged on the bottom surface 301b of the suction concave portion 301 at predetermined intervals in the circumferential direction, for example. The number of the suction ports 301c is four in the example shown in fig. 4, but the present invention is not limited thereto.
A suction passage 303d is provided in the bottom plate 303, and the suction passage 303d communicates with the suction ports 301c and with a suction source 36 constituted by a vacuum generating device such as a vacuum pump or an ejector.
A plurality of support pins 302 are erected at equal intervals on the bottom surface 301b while avoiding the suction port 301c in the suction concave portion 301, and the upper surface 302a of each support pin 302 and the upper surface 300a of the outer peripheral annular wall 300 are aligned at the same level. Further, a plating layer M is formed on the upper surface 302a of each support pin 302, and the plating layer M formed on the annular upper surface 300a of the outer peripheral annular wall 300 and the plating layer M formed on the upper surface 302a of each support pin 302 have substantially the same thickness.
Further, a plating layer M is formed on the side surface 302c of each support pin 302 at a predetermined thickness.
For example, the outer peripheral annular wall 300, the bottom surface 301b (i.e., the bottom plate 303) of the suction recess 301, and the support pins 302 are composed of fine ceramics. Fine ceramics are, for example, cordierite (2mgo.2al) having extremely low coefficient of thermal expansion and excellent thermal shock resistance and mechanical strength 2 O 3 ·5SiO 2 )。
In the example shown in fig. 4, the outer shape of each support pin 302 is a cylinder, but more preferably, as shown in fig. 5, the outer shape is a support pin 304 of a truncated cone or truncated pyramid. The angle between the upper surface 304a and the side (inclined surface) 304c of the support pin 304 is an obtuse angle.
An example of forming the plating layer M on the inner side 300c, the outer side 300d, and the upper surface 300a of the outer circumferential annular wall 300, and the side 304c and the upper surface 304a of the support pin 304 of the chuck table 30 shown in fig. 5 will be described below. In the present embodiment, the plating layer M is formed using, for example, the electroless nickel plating apparatus 2 shown in fig. 6. The formation of the plating layer M is not limited to the example using the electroless nickel plating apparatus 2 shown in fig. 6, and the plating layer M may be made of a metal other than nickel.
The plating tank 20 of the electroless nickel plating apparatus 2 shown in fig. 6 stores a nickel plating solution such as nickel sulfate, nickel nitrate, or nickel sulfamate containing a reducing agent and a pH adjusting solution. The plating tank 20 is disposed in a constant temperature water tank 21, and the temperature of the nickel plating solution can be adjusted.
The plating tank 20 can be replenished with metallic nickel from the container a, the container B, and the pH adjusting liquid from the container C by the respective metering pumps A1, B1, and C1.
When electroless plating reaction occurs in the nickel plating solution in the plating tank 20, metal ions are reduced and precipitated in the solution by electrons of the reducing agent, and the nickel concentration, the reducing agent concentration, and the pH value in the solution change. In order to form the plating layer M of a uniform thickness on the chuck table 30, it is necessary to keep these parameters within a certain range for a long time, and for this reason, the electroless nickel plating apparatus 2 has the detecting portion 27.
The detection unit 27 includes, for example, a plating controller 270 and a water tank 271, and the water tank 271 cools the inspection liquid taken from the plating tank 20 to a predetermined temperature (inspection temperature).
After the inspection liquid taken from the plating tank 20 is flowed through the flow path 272 by a pump not shown and lowered to a predetermined temperature in the water tank 271, the inspection liquid is sent to the plating controller 270.
The plating controller 270 continuously measures the nickel concentration of the inspection liquid by a colorimeter, continuously measures the pH value by a pH meter, and when each value deviates from a set value, sends a signal to each of the dosing pumps A1, B1, C1 via the wiring 274. Then, the respective metering pumps A1, B1, and C1 are operated to supply the metal nickel, the reducing agent, and the pH adjusting liquid to the plating tank 20 in predetermined amounts, respectively, and to adjust parameters of the nickel plating liquid in the plating tank 20. When the values of the nickel plating solution in the plating tank 20 are restored to the set values, a stop signal is sent from the plating controller 270 to the respective metering pumps A1, B1, and C1, and replenishment is automatically stopped.
The nickel plating solution in the plating tank 20 is stirred by rotating the blades 221 by a rotation driving source 220 such as a motor, so that the concentration of the entire plating solution is uniform.
A measurement sensor 250 electrically connected to the film thickness monitor 25 is immersed in the plating bath 20. The film thickness monitor 25 can measure the thickness and the plating speed of the plating layer of the object to be plated by the measurement sensor 250, and its principle is that the transmission frequency of a quartz resonator mounted on a sensor head of the measurement sensor 250 is attenuated as the plating layer is deposited on the resonator, for example. The film thickness monitor 25 converts the plating speed and the thickness of the plating layer of the object to be plated from the attenuation speed of the transmission frequency and displays the converted plating speed and the thickness.
When the plating layer M is formed on the inner side 300c, the outer side 300d, and the upper surface 300a of the outer circumferential annular wall 300 of the chuck table 30 and the side 304c and the upper surface 304a of the support pin 304 shown in fig. 5 by using the electroless nickel plating apparatus 2 configured as described above, for example, the suction ports 301c of the chuck table 30 shown in fig. 5 are shielded from the nickel plating solution.
Then, the chuck table 30 shown in fig. 5 is immersed in the nickel plating solution in the plating tank 20 shown in fig. 6 from the upper surface 304a side of the support pins 304. At least the lower surface 305 of the chuck table 30 is exposed from the nickel plating solution. For example, only a portion of the chuck table 30 shown in fig. 5 above the virtual line L1 (a portion above the bottom surface 301 b) may be immersed in the nickel plating solution. In this case, the suction port 301c does not need to be shielded, and the plating layer M is formed only on the outer surface 300d of the outer circumferential annular wall 300 above the virtual line L1.
By electrons from the reducing agent in the nickel plating solution, nickel ions are reduced and deposited in a uniform thickness on the inner side 300c, the outer side 300d, and the upper surface 300a of the outer circumferential annular wall 300, and the side 304c and the upper surface 304a of the support pin 304 of the chuck table 30 shown in fig. 5. As described above, electroless nickel plating is performed for a predetermined time (for example, 2 days) while adjusting each parameter of the nickel plating solution, adjusting the temperature of the nickel plating solution (for example, maintaining the temperature at about 70 ℃) and monitoring the thickness of the plating layer M by the film thickness monitor 25 by the detection unit 27 shown in fig. 6, thereby forming the plating layer M having a predetermined thickness (for example, 200 μm) shown in fig. 5.
Further, when the plating layer M is formed while maintaining the temperature of the nickel plating solution at 90 degrees, for example, as in the conventional technique, thermal deformation of the chuck table 30 occurs, and therefore, it is preferable to maintain the temperature of the nickel plating solution at about 70 degrees as in the present embodiment.
Hereinafter, the following will be described with reference to fig. 1, 2 and 7: the plating layer M of the chuck table 30 shown in fig. 7 (for example, the chuck table 30 removed from the electroless nickel plating apparatus 2) is turned to form a flat holding surface on the chuck table 30.
For example, the Y-axis moving unit 14 shown in fig. 2 moves the chuck table 30 provided in the machining device 1 to a position slightly closer to the +y direction than the position immediately below the tool turning unit 6 shown in fig. 1, thereby positioning the chuck table 30 at the start position of turning feed.
The tool turning unit 6 is fed in the-Z direction by the machining feed unit 5, and as shown in fig. 7, the tool turning unit 6 is positioned such that the cutting edge 641 as the lowermost end of the tool 64 is cut into the plating layer M formed on the upper surface 304a of the support pin 304 and the plating layer M formed on the upper surface 300a of the outer peripheral annular wall 300 by a predetermined amount (for example, several μm). The motor 62 rotates the spindle 60 at a predetermined rotational speed in a clockwise direction as viewed from the +z direction, and accordingly, the tool 64 rotates the spindle 60 at a predetermined rotational speed in the clockwise direction.
The Y-axis moving unit 14 shown in fig. 2 moves the chuck table 30 in the-Y direction, so that the cutter tool 64, as shown in fig. 7, planarizes the plating layer M formed on the upper surface 300a of the outer circumferential annular wall 300, and then turns the plating layer M formed on the upper surface 304a of the support pins 304 so that the height of the plating layer M formed on the upper surface 304a of each support pin 304 is aligned with the height of the plating layer M formed on the upper surface 300a of the outer circumferential annular wall 300. A holding surface 306 (see fig. 8) which is formed on the chuck table 30 and is flush with the upper surface 304a of each support pin 304 and the upper surface 300a of the outer circumferential annular wall 300.
In the chuck table 30 of the present invention, the upper surface 300a of the outer circumferential annular wall 300 and the upper surface 304a of the support pin 304 are at the same height, and the plating M is formed on the inner side surface 300c, the outer side surface 300d, and the upper surface 300a of the outer circumferential annular wall 300 and on the side surfaces 304c and the upper surface 304a of the support pin 304, so that the plating M formed on the upper surface 300a and the upper surface 304a is reinforced by the plating M integrally formed on the inner side surface 300c, the outer side surface 300d, and the side surfaces 304c when the plating M is turned by the tool 64, and is not easily peeled off.
As shown in fig. 5 and 7, the support pin 304 is erected from the bottom surface 301b of the suction recess 301 in the form of a truncated cone or truncated pyramid having the upper surface 304a, and the angle between the upper surface 304a and the side surface (inclined surface) 304c of the support pin 304 is an obtuse angle, so that the plating layer M can be less likely to be peeled off.
The following describes a case of turning a plate-like workpiece W using the machining apparatus 1 shown in fig. 1 and the chuck table 30 having the flat holding surface 306 shown in fig. 8.
First, the chuck table 30 on which the plate-like workpiece W shown in fig. 1 is not placed is moved to the vicinity of the first conveying unit 335. The robot 330 pulls out one plate-like workpiece W from the first cassette 331, and moves the plate-like workpiece W to the temporary table 333a.
After the centering of the plate-like workpiece W on the temporary placement table 333a by the aligning unit 333b, the first conveying unit 335 moves the centered plate-like workpiece W onto the chuck table 30. Then, as shown in fig. 8, the plate-like workpiece W is placed on the flat holding surface 306 so that the center of the chuck table 30 substantially coincides with the center of the plate-like workpiece W. When the plate-like workpiece W is placed on the chuck table 30 in this way, the following state is obtained: the lower surface Wb of the plate-like workpiece W is supported by the support pins 304 via the plating layer M, and the outer peripheral portion of the lower surface Wb of the plate-like workpiece W is supported by the upper surface 300a of the outer peripheral annular wall 300 via the plating layer M.
Then, the suction force generated by the operation of the suction source 36 is transmitted to the suction concave portion 301 through the suction path 303d and the suction port 301c, and the chuck table 30 suctions and holds the plate-like workpiece W on the holding surface 306. Further, since the holding surface 306 is flat by turning the plating layer M before, vacuum leakage does not occur in the chuck table 30.
For example, the Y-axis moving unit 14 shown in fig. 2 moves the chuck table 30 that attracts and holds the plate-like workpiece W to a position slightly closer to the +y direction than immediately below the tool turning unit 6, thereby positioning the chuck table 30 at the start position of the turning feed.
The tool turning unit 6 is fed in the-Z direction by the machining feed unit 5, and as shown in fig. 8, the tool turning unit 6 is positioned at a height position at which the cutting edge 641 as the lowermost end of the tool 64 is cut into the upper surface Wa of the plate-like workpiece W by a predetermined amount. The motor 62 rotates the spindle 60 at a predetermined rotational speed in a clockwise direction as viewed from the +z direction, and accordingly, the tool 64 rotates the spindle 60 at a predetermined rotational speed in the clockwise direction.
The chuck table 30 for sucking and holding the plate-like workpiece W is moved in the-Y direction at a predetermined feed speed, and as shown in fig. 8, the cutter tool 64 performs turning on the upper surface Wa of the plate-like workpiece W to planarize the upper surface Wa. The thickness measuring unit 17 shown in fig. 1 is lowered to be in contact with the turned upper surface Wa of the plate-like workpiece W, and measures the thickness of the plate-like workpiece W.
Then, the chuck table 30 is moved in the-Y direction to a predetermined position in the Y axis direction, and turned by the rotary tool 64 so that the entire upper surface Wa of the plate-like workpiece W becomes a flat surface.
In the chuck table 30 of the present invention, since the outer circumferential annular wall 300, the suction concave portion 301, and the support pins 304 of the chuck table 30 are made of fine ceramics and the plating layer M is formed by electroless nickel plating, the chuck table 30 is hardly thermally deformed by the processing heat during the turning processing, and therefore the held plate-like workpiece W can be held by the flat holding surface 306 (the upper surface 304a of the support pins 304 and the upper surface 300a of the outer circumferential annular wall 300), and the plate-like workpiece W can be turned to a uniform thickness.

Claims (3)

1. A chuck table for use in a machining apparatus for performing suction holding of a lower surface of a plate-like workpiece and turning of an upper surface of the plate-like workpiece with a tool, wherein,
the chuck table has:
an outer peripheral annular wall that supports an outer peripheral portion of a lower surface of the plate-like workpiece with an annular upper surface;
a suction concave portion formed inside the outer circumferential annular wall and having a bottom surface lower than an upper surface of the outer circumferential annular wall;
a suction port formed on the bottom surface of the suction recess and communicating with a suction source; and
a plurality of support pins erected on the bottom surface at equal intervals so as to avoid the suction port, the support pins having an upper surface at the same height as an upper surface of the outer circumferential annular wall,
plating layers are formed on the side surfaces and the upper surface of the outer peripheral annular wall and the side surfaces and the upper surface of the support pin.
2. The chuck table according to claim 1, wherein,
the outer peripheral annular wall, the suction recess, and the support pin are made of fine ceramics, and the plating layer is formed by electroless nickel plating.
3. The chuck table according to claim 1 or 2, wherein,
the support pin is erected from the bottom surface in a truncated cone or truncated pyramid having the upper surface.
CN201910434221.2A 2018-05-25 2019-05-23 Chuck workbench Active CN110534471B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-100421 2018-05-25
JP2018100421A JP7108464B2 (en) 2018-05-25 2018-05-25 chuck table

Publications (2)

Publication Number Publication Date
CN110534471A CN110534471A (en) 2019-12-03
CN110534471B true CN110534471B (en) 2024-02-09

Family

ID=68659861

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910434221.2A Active CN110534471B (en) 2018-05-25 2019-05-23 Chuck workbench

Country Status (4)

Country Link
JP (1) JP7108464B2 (en)
KR (1) KR102644407B1 (en)
CN (1) CN110534471B (en)
TW (1) TWI809107B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113649842B (en) * 2021-08-30 2022-06-28 成都工贸职业技术学院 Vacuum chuck clamping convenient to equipment
JP2023077510A (en) 2021-11-25 2023-06-06 株式会社ディスコ Processing device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0230159A (en) * 1988-07-20 1990-01-31 Nikon Corp Substrate sucking device
JPH11314470A (en) * 1998-05-02 1999-11-16 Think Laboratory Co Ltd Intaglio plate having cushion property
JP2001203245A (en) * 1999-08-30 2001-07-27 Ibiden Co Ltd Wafer prober and ceramic substrate used therefor
JP2005333067A (en) * 2004-05-21 2005-12-02 Disco Abrasive Syst Ltd Processing apparatus for plate-like article
JP2010036321A (en) * 2008-08-07 2010-02-18 Disco Abrasive Syst Ltd Processing device including cutting tool
CN107437524A (en) * 2016-05-26 2017-12-05 日本特殊陶业株式会社 Base plate keeping device and its manufacture method
JP2018058135A (en) * 2016-10-03 2018-04-12 株式会社ディスコ Cutting-tool cutting device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09309037A (en) * 1996-05-24 1997-12-02 Hitachi Denshi Ltd Adsorbing fixing device for thin plate work
JP2001054888A (en) * 1999-06-11 2001-02-27 Kuraitekku Kk Chuck and suction disc for plate-like material
JP2014075372A (en) * 2010-12-27 2014-04-24 Canon Anelva Corp Electrostatic attraction device
EP2950328A4 (en) * 2012-11-30 2017-01-25 Nikon Corporation Suction apparatus, carry-in method, conveyance system, light exposure device, and device production method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0230159A (en) * 1988-07-20 1990-01-31 Nikon Corp Substrate sucking device
JPH11314470A (en) * 1998-05-02 1999-11-16 Think Laboratory Co Ltd Intaglio plate having cushion property
JP2001203245A (en) * 1999-08-30 2001-07-27 Ibiden Co Ltd Wafer prober and ceramic substrate used therefor
JP2005333067A (en) * 2004-05-21 2005-12-02 Disco Abrasive Syst Ltd Processing apparatus for plate-like article
JP2010036321A (en) * 2008-08-07 2010-02-18 Disco Abrasive Syst Ltd Processing device including cutting tool
CN107437524A (en) * 2016-05-26 2017-12-05 日本特殊陶业株式会社 Base plate keeping device and its manufacture method
JP2018058135A (en) * 2016-10-03 2018-04-12 株式会社ディスコ Cutting-tool cutting device

Also Published As

Publication number Publication date
KR20190134466A (en) 2019-12-04
TWI809107B (en) 2023-07-21
JP7108464B2 (en) 2022-07-28
KR102644407B1 (en) 2024-03-06
JP2019204916A (en) 2019-11-28
CN110534471A (en) 2019-12-03
TW202004981A (en) 2020-01-16

Similar Documents

Publication Publication Date Title
CN109216159B (en) Wafer generating device
US20200343102A1 (en) Wafer producing method and wafer producing apparatus
JP2009050944A (en) Substrate thickness measuring method and substrate processing device
CN110534471B (en) Chuck workbench
JP2010199227A (en) Grinding device
JP2007214457A (en) Wafer processing equipment and method therefor
US11612979B2 (en) Polishing pad
JP2011224758A (en) Polishing method
TWI779146B (en) cutting device
US10847398B2 (en) Chuck table correction method and cutting apparatus
JP2008062353A (en) Grinding method and grinding device
JP5731806B2 (en) Grinding equipment
TWI783054B (en) Grinding device
JP5635892B2 (en) Grinding equipment
JP7412996B2 (en) grinding equipment
KR20220064304A (en) Machining apparatus
CN109501015B (en) Cutting device
JP2017112216A (en) Division device
KR20160120656A (en) Dry type polishing apparatus
CN113001283B (en) Method for cleaning grinding chamber
JP2022045713A (en) Processing device
CN215432847U (en) Grinding machine for cylindrical magnetic material
JP2018114559A (en) Polishing device
US20220122886A1 (en) Laser processing method
JP2009274172A (en) Cutting apparatus

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant