TW202004981A - Chuck table wherein a plating layer that is not peeled off during turning is formed on a material that is not easily deformed by heat - Google Patents

Chuck table wherein a plating layer that is not peeled off during turning is formed on a material that is not easily deformed by heat Download PDF

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TW202004981A
TW202004981A TW108117713A TW108117713A TW202004981A TW 202004981 A TW202004981 A TW 202004981A TW 108117713 A TW108117713 A TW 108117713A TW 108117713 A TW108117713 A TW 108117713A TW 202004981 A TW202004981 A TW 202004981A
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chuck table
plate
plating layer
annular wall
support pin
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TW108117713A
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Chinese (zh)
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TWI809107B (en
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森俊
波岡伸一
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日商迪思科股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemically Coating (AREA)
  • Jigs For Machine Tools (AREA)
  • Milling, Broaching, Filing, Reaming, And Others (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Gripping On Spindles (AREA)
  • Dicing (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

In a pin chuck table, a plating layer that is not peeled off during turning is formed on a material that is not easily deformed by heat. The chuck table 30 is used in a processing apparatus 1 for sucking and holding the lower surface Wb of a plate-shaped workpiece W, and turning the upper surface Wa of the plate-shaped workpiece with a turning tool 64. The chuck table 30 comprises a peripheral annular wall 300 for supporting the periphery of the lower surface Wb of the plate-shaped workpiece by an annular upper surface 300a; a suction recess 301 formed inside the peripheral annular wall 300 and having a bottom surface 301b lower than the upper surface 300a of the peripheral annular wall 300; a suction opening 301c formed at the bottom surface 301b of the suction recess 301 and communicated with the suction source 36; and support pins 304 bypassing the suction opening 301c and erected on the bottom surface 301b at equal intervals, wherein the upper surface 304a and the upper surface 300a of the peripheral annular wall 300 are of the same height, and the plating layer M is formed on the side surface 300c, 300d and the upper surface 300a of the peripheral annular wall 300, and the side surface 304c and the upper surface 304a of the support pins 304.

Description

卡盤台Chuck table

本發明係關於一種保持板狀工件的卡盤台。The invention relates to a chuck table for holding plate-shaped workpieces.

使用於以車刀工具旋削加工板狀工件的加工裝置的卡盤台例如是由如後述構件所構成：外周環狀保持部，形成在外周側；吸引凹部，形成在該外周環狀保持部的內側且連通吸引手段；以及，多個支撐銷，形成在該吸引凹部內（例如參照專利文獻1）。像這樣構成的卡盤台藉由以多個支撐銷支撐板狀工件，因為支撐銷的支撐面積小，所以廢料等的異物不會被夾入至卡盤台與板狀工件之間，從而能平坦地保持板狀工件。The chuck table used in a machining device for turning a plate-shaped workpiece with a turning tool is composed of, for example, a member to be described later: an outer circumferential ring-shaped holding portion is formed on the outer circumferential side; a suction recess is formed on the outer circumferential ring-shaped holding portion The inner side communicates with the suction means; and a plurality of support pins are formed in the suction recess (for example, refer to Patent Document 1). The chuck table constructed in this way supports the plate-shaped workpiece with a plurality of support pins. Because the support area of the support pin is small, foreign objects such as waste materials are not caught between the chuck table and the plate-shaped workpiece. Keep the plate-shaped workpiece flat.

[習知技術文獻] [專利文獻] [專利文獻1]日本特開2005-333067號公報。[Conventional Technical Literature] [Patent Literature] [Patent Document 1] Japanese Patent Laid-Open No. 2005-333067.

[發明所欲解決的課題] 然而卡盤台因經年累月變化而產生機械性偏差，會使支撐銷的上表面的高度有些微的位移。因此，藉由車刀工具旋削卡盤台的上表面（外周環狀保持部的上表面與各支撐銷的上表面），從而使支撐銷的高度一致。 於此，為了使車刀工具容易旋削支撐銷的上表面，在支撐銷的上表面係形成有厚度為200μm左右的鎳等的鍍層。並定期地旋削此鍍層數μm而使支撐銷的高度一致。[Problems to be solved by the invention] However, the mechanical deviation of the chuck table due to changes over time can cause a slight displacement of the height of the upper surface of the support pin. Therefore, the upper surface of the chuck table (the upper surface of the outer circumferential ring-shaped holding portion and the upper surface of each support pin) is rotated by the turning tool to make the height of the support pin uniform. Here, in order to facilitate the turning of the upper surface of the support pin by the turning tool, a plating layer of nickel or the like having a thickness of about 200 μm is formed on the upper surface of the support pin. And periodically spin the plating layer of several μm to make the height of the support pin uniform.

像這樣以車刀工具旋削鍍層時，鍍層被施力而會有鍍層剝落的問題。又，為了形成200μm這樣厚的鍍層較佳為使用電鍍法，惟能做電鍍法的材質容易受熱變形。因此，當卡盤台的各部零件係由能做電鍍法的材質所形成時，則因車刀旋削時所產生的加工熱，會有支撐銷等受熱變形而導致保持的板狀工件無法成為均等的厚度的問題。When turning the plating layer with a turning tool like this, the plating layer is forced to cause the plating layer to peel off. In addition, in order to form a plating layer as thick as 200 μm, it is preferable to use an electroplating method, but the material capable of the electroplating method is easily deformed by heat. Therefore, when each part of the chuck table is formed of a material that can be plated, the processing heat generated when the turning tool is turned, and the support plate and the like are deformed by heat and the plate-shaped workpiece held cannot be equalized The thickness of the problem.

因此，在銷卡盤台中具有如後述的課題：將做旋削加工時不會剝落的鍍層，形成在不易受熱變形的材質上。Therefore, the pin chuck table has a problem as described below: a plating layer that does not peel off during the turning process is formed on a material that is not easily deformed by heat.

[解決課題的技術手段] 為解決上述課題，本發明係一種卡盤台，使用於吸引保持板狀工件的下表面並以車刀工具旋削加工該板狀工件的上表面的加工裝置；該卡盤台具備：外周環狀壁，以環狀的上表面支撐該板狀工件的下表面的外周部分；吸引凹部，形成在該外周環狀壁的內側，且具有比該外周環狀壁的上表面還低的底面；吸引口，形成在該吸引凹部的該底面且連通吸引源；以及，支撐銷，避開該吸引口且等間隔地多個立設在該底面，且上表面與該外周環狀壁的上表面為相同高度；其中，鍍層形成在該外周環狀壁的側面與上表面以及該支撐銷的側面與上表面。[Technical means to solve the problem] In order to solve the above-mentioned problems, the present invention is a chuck table for a processing device that attracts and holds the lower surface of a plate-shaped workpiece and rotates the upper surface of the plate-shaped workpiece with a lathe tool; the chuck table includes: an outer circumferential ring shape The wall supports the outer peripheral portion of the lower surface of the plate-like workpiece with a ring-shaped upper surface; a suction recess is formed inside the ring-shaped peripheral wall and has a bottom surface lower than the upper surface of the ring-shaped peripheral wall; A mouth is formed on the bottom surface of the suction recess and communicates with the suction source; and a support pin avoids the suction port and is erected on the bottom surface at regular intervals, and the upper surface and the upper surface of the outer circumferential annular wall are The same height; wherein, the plating layer is formed on the side surface and the upper surface of the peripheral annular wall and the side surface and the upper surface of the support pin.

該外周環狀壁、該吸引凹部以及該支撐銷係由精密陶瓷所構成，該鍍層較佳為由無電鍍鎳所形成。The outer peripheral annular wall, the suction recess and the support pin are made of precision ceramics, and the plating layer is preferably made of electroless nickel.

該支撐銷較佳為以具有該支撐銷的上表面的圓錐台或角錐台從該底面立設而成。The support pin is preferably formed from a bottom surface by a truncated cone or a truncated pyramid having an upper surface of the support pin.

[發明功效] 本發明的卡盤台因為外周環狀壁的上表面與支撐銷的上表面為相同高度，且鍍層形成在外周環狀壁的側面與上表面以及支撐銷的側面與上表面，所以在以車刀工具旋削加工鍍層時鍍層不易剝落。[Effect of invention] The chuck table of the present invention has the same height as the upper surface of the outer circumferential annular wall and the upper surface of the support pin, and the plating layer is formed on the side surface and upper surface of the outer circumferential annular wall and the side surface and upper surface of the support pin. The coating is not easy to peel off when the knife tool rotates the coating.

又，卡盤台的外周環狀壁、吸引凹部以及支撐銷係由精密陶瓷所構成，且鍍層係由無電鍍鎳所形成，藉此卡盤台難以因旋削加工時的加工熱而受熱變形，故能將保持的板狀工件旋削加工為均等的厚度。In addition, the outer circumferential wall of the chuck table, the suction recess, and the support pin are made of precision ceramics, and the plating layer is made of electroless nickel, so that the chuck table is less likely to be deformed by heat due to the processing heat during the turning process. Therefore, it is possible to turn the held plate-shaped workpiece to an equal thickness.

藉由支撐銷是以具有該支撐銷的上表面的圓錐台或角錐台從吸引凹部的底面立設而成，因為支撐銷的上表面與側面（斜面）之間的角度呈鈍角，所以使鍍層變得更不易剝落。The support pin is formed by a truncated cone or a truncated cone with the upper surface of the support pin standing from the bottom surface of the suction recess, because the angle between the upper surface of the support pin and the side surface (oblique surface) is obtuse, so the plating layer It becomes more difficult to peel off.

圖1所示的加工裝置1為如後述的裝置：藉由具備車刀工具64的車刀旋削手段6，旋削加工保持在本發明的卡盤台30上的板狀工件W。加工裝置1的基座10上的前方（-Y方向側）係成為相對於卡盤台30進行板狀工件W的拆裝的區域，而基座10上的後方（+Y方向側）則成為藉由車刀旋削手段6進行保持在卡盤台30上的板狀工件W的旋削加工的區域。The processing device 1 shown in FIG. 1 is a device to be described later: By a turning tool 6 provided with a turning tool 64, a plate-shaped workpiece W held on the chuck table 30 of the present invention is turned and processed. The front side (-Y direction side) on the base 10 of the processing apparatus 1 becomes a region where the plate-shaped workpiece W is detached from the chuck table 30, and the rear side (+Y direction side) on the base 10 becomes The turning processing area of the plate-shaped workpiece W held on the chuck table 30 is performed by the turning tool 6 of the turning tool.

圖1所示的板狀工件W例如是以矽為原料且外形為圓形的半導體晶圓，惟本發明並非限定為此。然後，板狀工件W的上表面Wa係成為被旋削加工的被加工面。板狀工件W的下表面Wb則被未圖示的保護膠膜所黏貼保護。The plate-shaped workpiece W shown in FIG. 1 is, for example, a semiconductor wafer with silicon as a raw material and a circular shape, but the present invention is not limited to this. Then, the upper surface Wa of the plate-like workpiece W becomes a work surface to be processed by turning. The lower surface Wb of the plate-shaped workpiece W is adhered and protected by a protective adhesive film (not shown).

在加工裝置1的基座10的前方側，配設有操作員用以輸入加工條件等的輸入手段19。又，在基座10上的前方側，還配設有容納旋削加工前的板狀工件W的第一卡匣331與容納完成旋削加工的板狀工件W的第二卡匣332。在第一卡匣331與第二卡匣332之間，配設有如後述的機械具330：其將旋削加工前的板狀工件W從第一卡匣331搬出，同時將完成旋削加工的板狀工件W搬入至第二卡匣332。On the front side of the base 10 of the processing apparatus 1, an input means 19 for an operator to input processing conditions and the like is arranged. In addition, on the front side of the base 10, a first cassette 331 for accommodating the plate-shaped workpiece W before the turning process and a second cassette 332 for accommodating the plate-shaped workpiece W after the turning process are also arranged. Between the first cassette 331 and the second cassette 332, a mechanical tool 330, which will be described later, is disposed: it carries out the plate-shaped workpiece W before the turning process from the first cassette 331, and at the same time transfers the plate-like shape completed with the turning process The workpiece W is carried into the second cassette 332.

在機械具330的可動區域，設有暫置加工前的板狀工件W的暫置台333a，在暫置台333a則配設有對位手段333b。對位手段333b係以縮徑的對位銷將從第一卡匣331搬出且載置於暫置台333a的板狀工件W對位（定中心）在預定的位置。 在機械具330的可動區域，還配設有清洗完成旋削加工的板狀工件W的清洗手段334。清洗手段334例如是枚葉式的旋轉清洗裝置。In the movable area of the machine tool 330, a temporary table 333a for temporarily storing the plate-shaped workpiece W before processing is provided, and the temporary table 333a is provided with alignment means 333b. The aligning means 333b aligns (centers) the plate-shaped workpiece W that is carried out from the first cassette 331 and placed on the temporary table 333a with a reduced-diameter aligning pin at a predetermined position. In the movable area of the machine tool 330, a cleaning means 334 for cleaning the plate-shaped workpiece W that has been turned is also provided. The cleaning means 334 is, for example, a leaf-blade type rotary cleaning device.

在對位手段333b的附近係配設有第一搬送手段335，在清洗手段334的附近則配設有第二搬送手段336。第一搬送手段335將載置於暫置台333a且將經中心校正的旋削加工前的板狀工件W搬送至卡盤台30，第二搬送手段336則將保持在卡盤台30的完成旋削加工的板狀工件W搬送至清洗手段334。The first conveyance means 335 is arranged near the alignment means 333b, and the second conveyance means 336 is arranged near the cleaning means 334. The first conveying means 335 conveys the plate-like workpiece W placed on the temporary table 333a and is subjected to center correction before the turning process to the chuck table 30, and the second conveying means 336 holds the completed turning process on the chuck table 30 The plate-like workpiece W is transported to the cleaning means 334.

如圖2所示，卡盤台30被可同時與卡盤台30移動的蓋體39包圍住周圍，且藉由配設在卡盤台30的下方的旋轉手段34呈可繞Z軸方向的軸心旋轉。As shown in FIG. 2, the chuck table 30 is surrounded by a cover 39 that can move simultaneously with the chuck table 30, and is rotated around the Z axis by the rotation means 34 disposed under the chuck table 30. The axis rotates.

如圖1、2所示，在卡盤台30、蓋體39以及連結於蓋體39的蛇腹蓋體39a的下方，配設有使卡盤台30往Y軸方向移動的Y軸移動手段14。圖2所示的Y軸移動手段14具備：滾珠螺桿140，具有Y軸方向的軸心；一對導軌141，與滾珠螺桿140平行地配置；馬達142，連結於滾珠螺桿140且轉動滾珠螺桿140；以及可動板143，內部所具備的螺帽係螺合滾珠螺桿140，且底部係滑動於導軌141上；當馬達142轉動滾珠螺桿140，則伴隨此動作可動板143會被導軌141所導引而往Y軸方向移動，且經由旋轉手段34而配設在可動板143上的卡盤台30與蓋體39會往Y軸方向移動。又，蛇腹蓋體39a會伴隨著卡盤台30的移動而往Y軸方向伸縮。As shown in FIGS. 1 and 2, under the chuck table 30, the cover 39, and the bellows cover 39 a connected to the cover 39, Y-axis moving means 14 for moving the chuck table 30 in the Y-axis direction are provided . The Y-axis moving means 14 shown in FIG. 2 includes: a ball screw 140 having an axis in the Y-axis direction; a pair of guide rails 141 arranged parallel to the ball screw 140; and a motor 142 connected to the ball screw 140 and rotating the ball screw 140 And the movable plate 143, the internal nut is screwed to the ball screw 140, and the bottom is sliding on the guide rail 141; when the motor 142 rotates the ball screw 140, the movable plate 143 will be guided by the guide rail 141 with this action On the other hand, it moves in the Y-axis direction, and the chuck table 30 and the cover 39 disposed on the movable plate 143 via the rotation means 34 move in the Y-axis direction. In addition, the bellows cover 39a expands and contracts in the Y-axis direction as the chuck table 30 moves.

如圖1所示，在基座10上的後部側（+Y方向側）係立設有柱體11，在柱體11的前面則配設有如後述的加工進給手段5：其使車刀旋削手段6往相對於卡盤台30為遠離或靠近的Z軸方向（垂直方向）做加工進給。圖1、3所示的加工進給手段5具備：滾珠螺桿50，具有Z軸方向的軸心；一對導軌51，與滾珠螺桿50平行地配置；馬達52，連結於滾珠螺桿50的上端且轉動滾珠螺桿50；升降板53，內部的螺帽係螺合滾珠螺桿50，且側部係滑接於導軌51上；以及保持架54，固定在升降板53且保持車刀旋削手段6；伴隨著馬達52轉動滾珠螺桿50，升降板53會被導軌51所導引而往Z軸方向往返移動，且保持在保持架54的車刀旋削手段6會往Z軸方向加工進給。As shown in FIG. 1, a column 11 is erected on the rear side (+Y direction side) of the base 10, and a processing and feeding means 5 to be described later is arranged in front of the column 11: The turning means 6 performs machining feed in the Z-axis direction (vertical direction) that is away from or closer to the chuck table 30. The processing and feeding means 5 shown in FIGS. 1 and 3 includes: a ball screw 50 having an axis in the Z-axis direction; a pair of guide rails 51 arranged parallel to the ball screw 50; and a motor 52 connected to the upper end of the ball screw 50 and Rotate the ball screw 50; the lifting plate 53, the internal nut is screwed to the ball screw 50, and the side is slidingly connected to the guide rail 51; and the holder 54 is fixed to the lifting plate 53 and holds the turning tool turning means 6; accompanying The ball screw 50 is rotated by the motor 52, and the lifting plate 53 is guided by the guide rail 51 to reciprocate in the Z-axis direction, and the turning tool 6 held in the holder 54 is processed and fed in the Z-axis direction.

車刀旋削手段6具備：主軸60，軸方向為垂直方向（Z軸方向）；殼體61，可旋轉地支撐主軸60；馬達62，旋轉驅動主軸60；圓形的車刀輪63，連接於主軸60的下端；以及車刀工具64，可拆裝地裝設在車刀輪63上。The turning tool turning tool 6 includes: a main shaft 60 whose axis direction is the vertical direction (Z-axis direction); a housing 61 which rotatably supports the main shaft 60; a motor 62 which rotationally drives the main shaft 60; a round turning tool wheel 63 connected to The lower end of the main shaft 60; and the turning tool 64 are detachably mounted on the turning wheel 63.

如圖3所示，在車刀輪63係配設有供車刀工具64插入嵌合的插嵌孔630，車刀工具64具備：長方體狀的刀柄640，插入嵌合於插嵌孔630且被固定螺栓631固定；以及切刃641，尖狀地形成在刀柄640的下端。切刃641例如是將金剛石等的磨粒與預定的接合料做燒結固定者。As shown in FIG. 3, the turning wheel 63 is provided with an insertion hole 630 into which the turning tool 64 is inserted and fitted. The turning tool 64 includes a cuboid shank 640 that is inserted and fitted into the insertion hole 630 And is fixed by the fixing bolt 631; and the cutting edge 641 is formed sharply at the lower end of the shank 640. The cutting edge 641 is, for example, a sintered and fixed material such as diamond abrasive grains and a predetermined bonding material.

如圖1所示，在基座10上係形成有被立設在基座10上的壁部100與柱體11所包圍的凹狀部分，此凹狀部分係成為如後述的清洗水容納部101：其承接從卡盤台30流下的清洗水，清洗水係在旋削加工時供給至板狀工件W與車刀工具64的加工點。在清洗水容納部101係形成有排水口102，含有旋削屑等的清洗水會從排水口102往未圖示的排水槽等排出。As shown in FIG. 1, a concave portion surrounded by a wall portion 100 and a column 11 standing on the base 10 is formed on the base 10, and the concave portion becomes a washing water accommodating portion to be described later 101: It accepts the washing water flowing down from the chuck table 30, and the washing water system supplies the processing points of the plate-shaped workpiece W and the turning tool 64 during the turning process. A drain port 102 is formed in the washing water accommodating portion 101, and the washing water containing rotary chips and the like is discharged from the drain port 102 to a drain groove or the like (not shown).

在卡盤台30的移動路線的上方，配設有測量經旋削的板狀工件W的厚度的厚度測量手段17。厚度測量手段17被如後述的支撐橋18所支撐：其以跨越卡盤台30的方式立設在基座10上。厚度測量手段17為可往Z軸方向移動的直驅式線性量規，惟本發明並非限定為此，亦可例如是如後述的反射型光學感測器：具備發光部與受光部，並能以非接觸方式測量板狀工件W的厚度。舉例而言，厚度測量手段17係呈可往X軸方向往返移動。Above the moving path of the chuck table 30, a thickness measuring means 17 for measuring the thickness of the plate-shaped workpiece W that has been rotated is arranged. The thickness measuring means 17 is supported by a support bridge 18 as will be described later: it stands on the base 10 so as to straddle the chuck table 30. The thickness measuring means 17 is a direct-drive linear gauge that can move in the Z-axis direction, but the present invention is not limited to this, and may also be, for example, a reflective optical sensor as described below: it includes a light-emitting portion and a light-receiving portion, and can The thickness of the plate-shaped workpiece W is measured in a non-contact manner. For example, the thickness measuring means 17 is capable of reciprocating in the X-axis direction.

圖2、4所示的本發明的卡盤台30係具備俯視呈圓形的底板303，且外周環狀壁300係一體地從底板303的上表面外周區域往+Z方向立設。在圖4所示的外周環狀壁300的環狀的上表面300a，以預定的厚度形成有鍍層M，外周環狀壁300係隔著鍍層M以環狀的上表面300a支撐板狀工件W的下表面Wb的外周部分。 又，在外周環狀壁300的外側面300d與內側面300c，同樣以預定的厚度形成有鍍層M。The chuck table 30 of the present invention shown in FIGS. 2 and 4 includes a bottom plate 303 having a circular shape in plan view, and the outer circumferential annular wall 300 is integrally erected from the upper surface outer circumferential area of the bottom plate 303 in the +Z direction. On the annular upper surface 300 a of the outer peripheral annular wall 300 shown in FIG. 4, a plating layer M is formed with a predetermined thickness, and the outer peripheral annular wall 300 supports the plate-shaped workpiece W with the annular upper surface 300 a across the plating layer M The outer peripheral portion of the lower surface Wb. In addition, the plating layer M is formed with a predetermined thickness on the outer side surface 300d and the inner side surface 300c of the outer circumferential annular wall 300.

形成在外周環狀壁300內側的空間係成為如後述的吸引凹部301：其具有比外周環狀壁300的上表面300a低的底面301b（底板303的上表面）。在該吸引凹部301的底面301b，例如有吸引口301c隔開預定間隔均等地配設在圓周方向。吸引口301c的配設數在圖4所示的例子中為4個，惟本發明並非限定為此。 在底板303的內部則設有吸引通道303d，吸引通道303d連通於各吸引口301c，同時還連通至由真空幫浦或噴射器等的真空產生裝置所形成的吸引源36。The space formed inside the outer circumferential annular wall 300 becomes a suction recess 301 as described later: it has a bottom surface 301 b (upper surface of the bottom plate 303) lower than the upper surface 300 a of the outer circumferential annular wall 300. On the bottom surface 301b of the suction recessed portion 301, for example, the suction port 301c is evenly arranged at a predetermined interval in the circumferential direction. In the example shown in FIG. 4, the number of the suction ports 301c is four, but the present invention is not limited to this. Inside the bottom plate 303, a suction channel 303d is provided. The suction channel 303d communicates with each suction port 301c, and also communicates with a suction source 36 formed by a vacuum generating device such as a vacuum pump or an ejector.

在吸引凹部301內，多個支撐銷302係避開吸引口301c且以等間隔立設在底面301b，各支撐銷302的上表面302a與外周環狀壁300的上表面300a係整列為相同的高度。又，在各支撐銷302的上表面302a係形成有鍍層M，而形成在外周環狀壁300的環狀上表面300a的鍍層M與形成在支撐銷302的上表面302a的鍍層M係呈約略相同的厚度。 又，在各支撐銷302的側面302c，也同樣以預定的厚度形成有鍍層M。In the suction recess 301, a plurality of support pins 302 avoid the suction port 301c and are erected on the bottom surface 301b at equal intervals. The upper surface 302a of each support pin 302 and the upper surface 300a of the outer circumferential annular wall 300 are aligned in the same row height. In addition, a plating layer M is formed on the upper surface 302 a of each support pin 302, and the plating layer M formed on the annular upper surface 300 a of the outer circumferential wall 300 is approximately the same as the plating layer M formed on the upper surface 302 a of the support pin 302. The same thickness. In addition, a plating layer M is also formed with a predetermined thickness on the side surface 302c of each support pin 302.

舉例而言，外周環狀壁300、吸引凹部301的底面301b（亦即底板303）以及支撐銷302係由精密陶瓷所構成。精密陶瓷例如是熱膨脹係數極低且具有良好耐熱衝擊性與機械強度的堇青石（2MgO・2Al2 O3 ・5SiO2 ）。For example, the outer peripheral annular wall 300, the bottom surface 301b of the suction recess 301 (that is, the bottom plate 303), and the support pin 302 are made of precision ceramics. Precision ceramics are, for example, cordierite (2MgO·2Al 2 O 3 ·5SiO 2 ) with a very low thermal expansion coefficient and good thermal shock resistance and mechanical strength.

各支撐銷302在圖4所示的例子中，其外形係呈圓柱，惟較佳為如圖5所示的外形為圓錐台或角錐台的支撐銷304。支撐銷304的上表面304a與側面（斜面）304c之間的角度呈鈍角。In the example shown in FIG. 4, each support pin 302 has a cylindrical shape, but it is preferably a support pin 304 having a truncated cone or truncated cone shape as shown in FIG. 5. The angle between the upper surface 304a of the support pin 304 and the side surface (oblique surface) 304c is an obtuse angle.

以下，說明對圖5所示的卡盤台30的外周環狀壁300的內側面300c、外側面300d以及上表面300a，以及支撐銷304的側面304c與上表面304a形成鍍層M的一例子。在本實施形態中，鍍層M例如是使用圖6所示的無電鍍鎳裝置2所形成。附帶一提的是，鍍層M的形成並非限定為使用圖6所示的無電鍍鎳裝置2的例子者，形成的鍍層M亦可為由鎳以外的金屬所構成者。Hereinafter, an example in which the plating layer M is formed on the inner side surface 300c, the outer side surface 300d, and the upper surface 300a of the outer peripheral annular wall 300 of the chuck table 30 shown in FIG. 5 and the side surface 304c and the upper surface 304a of the support pin 304 will be described. In this embodiment, the plating layer M is formed using the electroless nickel plating device 2 shown in FIG. 6, for example. Incidentally, the formation of the plating layer M is not limited to an example using the electroless nickel plating apparatus 2 shown in FIG. 6, and the plating layer M formed may be made of a metal other than nickel.

圖6所示的無電鍍鎳裝置2的鍍槽20係存放有：含有還原劑與pH調整液的硫酸鎳、硝酸鎳或胺磺酸鎳等的鎳鍍液。鍍槽20係配設在恆溫水槽21中，並可調整鎳鍍液的溫度。 鍍槽20可藉由各定量幫浦A1、B1及C1分別從儲存槽A補充金屬鎳、從儲存槽B補充還原劑、從儲存槽C補充pH調整液。The plating tank 20 of the electroless nickel plating apparatus 2 shown in FIG. 6 stores a nickel plating solution containing nickel sulfate, nickel nitrate, nickel sulfamate, or the like containing a reducing agent and a pH adjusting liquid. The plating tank 20 is arranged in the constant temperature water tank 21 and can adjust the temperature of the nickel plating solution. The plating tank 20 can supplement the nickel metal from the storage tank A, the reducing agent from the storage tank B, and the pH adjustment liquid from the storage tank C by the respective quantitative pumps A1, B1, and C1.

鍍槽20內的鎳鍍液當產生無電鍍反應時，則會產生由溶液中還原劑的電子所導致的金屬離子的還原析出，從而溶液中的鎳濃度、還原劑濃度以及pH值會變化。為了在卡盤台30形成均等厚度的鍍層M，必須將該等參數長時間維持在一定範圍內，而無電鍍鎳裝置2則具備用以實現此功能的檢測部27。When an electroless plating reaction occurs in the nickel plating solution in the plating tank 20, metal ions are reduced and precipitated due to the electrons of the reducing agent in the solution, so that the nickel concentration, the reducing agent concentration, and the pH value in the solution change. In order to form the plating layer M of equal thickness on the chuck table 30, it is necessary to maintain these parameters within a certain range for a long time, and the electroless nickel plating apparatus 2 is provided with a detection section 27 to realize this function.

檢測部27例如是具備電鍍控制器270，以及將從鍍槽20內所採取出的檢查液冷卻至預定溫度（檢查溫度）的水槽271。 藉由未圖示的幫浦，從鍍槽20內所採取出的檢查液會通過流路272，在水槽217內降低至預定溫度後再送往電鍍控制器270。 電鍍控制器270係以比色計連續測量檢查液的鎳濃度，並以pH計連續測量pH值，當各數值非設定值時，藉由配線274對各定量幫浦A1、B1以及C1傳送訊號。然後，各定量幫浦A1、B1以及C1會啟動並對鍍槽20補充預定量的金屬鎳、還原劑或pH調整液，從而進行鍍槽20內的鎳鍍液的參數調整。又，當鍍槽20內的鎳鍍液的各數值恢復為設定值，則電鍍控制器270會對各定量幫浦A1、B1以及C1傳送停止訊號，從而自動地停止補充。The detection unit 27 includes, for example, a plating controller 270 and a water tank 271 that cools the inspection liquid taken out of the plating tank 20 to a predetermined temperature (inspection temperature). With a pump (not shown), the inspection liquid taken out from the plating tank 20 passes through the flow path 272, and is lowered to a predetermined temperature in the water tank 217 before being sent to the plating controller 270. The electroplating controller 270 continuously measures the nickel concentration of the inspection solution with a colorimeter, and continuously measures the pH value with a pH meter. When each value is not set, a signal is sent to each quantitative pump A1, B1, and C1 through the wiring 274 . Then, each of the quantitative pumps A1, B1, and C1 starts and supplements the plating tank 20 with a predetermined amount of metallic nickel, a reducing agent, or a pH adjusting liquid, thereby adjusting the parameters of the nickel plating liquid in the plating tank 20. In addition, when each value of the nickel plating solution in the plating tank 20 returns to the set value, the plating controller 270 transmits a stop signal to each of the quantitative pumps A1, B1, and C1 to automatically stop the replenishment.

鍍槽20內的鎳鍍液藉由馬達等的旋轉驅動源220使扇葉221旋轉做攪拌，從而整體的濃度會均等化。 在鍍槽20內，浸有電性連接至膜厚度監控器25的測量感測器250。膜厚度監控器25能藉由測量感測器250測量被鍍物的鍍層厚度與電鍍速度，舉例而言，其原理可為利用如後述者：裝設在測量感測器250的感測頭上的石英振盪器的振盪頻率，隨著鍍層沉澱在振盪器上而逐漸衰減。膜厚度監控器25從此振盪頻率的衰減速度換算出電鍍速度與被鍍物的鍍層厚度並做顯示。The nickel plating solution in the plating tank 20 is rotated and stirred by a rotary drive source 220 such as a motor, so that the overall concentration is equalized. In the plating tank 20, a measurement sensor 250 electrically connected to the film thickness monitor 25 is immersed. The film thickness monitor 25 can measure the plating thickness and plating speed of the object to be plated by the measurement sensor 250. For example, the principle can be as follows: the sensor head mounted on the measurement sensor 250 The oscillation frequency of the quartz oscillator gradually attenuates as the coating deposits on the oscillator. The film thickness monitor 25 converts the plating speed and the plating thickness of the object from the attenuation rate of the oscillation frequency and displays it.

使用如上述構成的無電鍍鎳裝置2，而將鍍層M形成在圖5所示的卡盤台30的外周環狀壁300的內側面300c、外側面300d以及上表面300a，且形成在支撐銷304的側面304c與上表面304a，在此情況，會例如在圖5所示的卡盤台30的各吸引口301c施以防止鎳鍍液進入至吸引通道303d內的遮罩。Using the electroless nickel plating apparatus 2 configured as described above, the plating layer M is formed on the inner side 300c, the outer side 300d, and the upper surface 300a of the outer circumferential annular wall 300 of the chuck table 30 shown in FIG. The side surface 304c and the upper surface 304a of the 304, in this case, a mask for preventing the nickel plating solution from entering the suction channel 303d is applied to each suction port 301c of the chuck table 30 shown in FIG. 5, for example.

然後，使圖5所示的卡盤台30從支撐銷304的上表面304a側往圖6所示的鍍槽20內的鎳鍍液做浸漬。附帶一提的是，至少卡盤台30的下表面305會成為從鎳鍍液突出的狀態。又，舉例而言，亦可為只使比圖5所示的卡盤台30的假想線L1還上側的部分（比底面301b還上側的部分）浸漬於鎳鍍液。在此情況，則不需吸引口301c的遮罩，外周環狀壁300的外側面300d會只在比假想線L1還上側的部分形成鍍層M。Then, the chuck table 30 shown in FIG. 5 is dipped from the upper surface 304a side of the support pin 304 into the nickel plating solution in the plating bath 20 shown in FIG. Incidentally, at least the lower surface 305 of the chuck table 30 will protrude from the nickel plating solution. In addition, for example, only the portion above the imaginary line L1 of the chuck table 30 shown in FIG. 5 (the portion above the bottom surface 301b) may be immersed in the nickel plating solution. In this case, the mask of the suction port 301c is not required, and the outer surface 300d of the outer circumferential annular wall 300 forms the plating layer M only on the upper side of the virtual line L1.

藉由來自鎳鍍液中的還原劑的電子，鎳離子會以均等的厚度還原析出在圖5所示的卡盤台30的外周環狀壁300的內側面300c、外側面300d以及上表面300a，且還原析出在支撐銷304的側面304c與上表面304a。然後，如先前所說明，會一邊由圖6所示的檢測部27進行鎳鍍液的各參數的調整、鎳鍍液的溫度調整（例如維持在約70℃），並由膜厚度監控器25進行鍍層M的厚度監控，一邊進行預定時間（例如2天）的無電鍍鎳，從而形成圖5所示的預定厚度（例如200μm）的鍍層M。 附帶一提的是，當鎳鍍液的溫度如習知般例如是維持在90度而形成鍍層M，則可能會引起卡盤台30的受熱變形，故較佳為如本實施形態將鎳鍍液的溫度維持在約70℃。By the electrons from the reducing agent in the nickel plating solution, nickel ions are reduced and precipitated at an equal thickness on the inner side 300c, outer side 300d, and upper surface 300a of the outer circumferential annular wall 300 of the chuck table 30 shown in FIG. , And reduced and deposited on the side surface 304c and the upper surface 304a of the support pin 304. Then, as previously explained, the detection section 27 shown in FIG. 6 adjusts the parameters of the nickel plating solution and the temperature of the nickel plating solution (for example, maintained at about 70° C.), and the film thickness monitor 25 The thickness of the plating layer M is monitored while performing electroless nickel plating for a predetermined time (for example, 2 days), thereby forming the plating layer M with a predetermined thickness (for example, 200 μm) shown in FIG. 5. Incidentally, when the temperature of the nickel plating solution is maintained at, for example, 90 degrees to form the plating layer M, it may cause thermal deformation of the chuck table 30, so it is preferable to plate nickel as in this embodiment The temperature of the liquid is maintained at about 70°C.

以下，使用圖1、圖2以及圖7，針對如後述的情況做說明：旋削圖7所示的卡盤台30（例如是從無電鍍鎳裝置2搬出的卡盤台30）的鍍層M，從而在卡盤台30形成平坦的保持面。 舉例而言，圖2所示的Y軸移動手段14會使設置在加工裝置1的卡盤台30移動至比圖1所示的車刀旋削手段6的正下方還稍微靠+Y方向的位置，藉此卡盤台30會定位在旋削進給的開始位置。In the following, using FIGS. 1, 2 and 7, a case will be described as follows: the plating layer M of the chuck table 30 shown in FIG. 7 (for example, the chuck table 30 carried out from the electroless nickel plating device 2) is rotated, Thus, a flat holding surface is formed on the chuck table 30. For example, the Y-axis movement means 14 shown in FIG. 2 moves the chuck table 30 provided in the processing apparatus 1 to a position slightly in the +Y direction directly below the turning tool turning means 6 shown in FIG. 1 In this way, the chuck table 30 will be positioned at the start position of the turning feed.

然後車刀旋削手段6被加工進給手段5送往-Z方向，如圖7所示，車刀旋削手段6被定位在如後述的高度位置：成為車刀工具64的最下端的切刃641會以預定量（例如數μm）切入至形成在支撐銷304的上表面304a的鍍層M，以及切入至形成在外周環狀壁300的上表面300a的鍍層M。更進一步，馬達62使主軸60以預定的旋轉速度往從+Z方向觀看為順時針的方向旋轉，伴隨此動作，車刀工具64會以主軸60為軸並以預定的旋轉速度往順時針方向旋轉。Then, the turning tool turning tool 6 is sent to the -Z direction by the machining feed means 5. As shown in FIG. 7, the turning tool turning tool 6 is positioned at a height position as will be described later: it becomes the lowermost cutting edge 641 of the turning tool 64 The plating layer M formed on the upper surface 304 a of the support pin 304 and the plating layer M formed on the upper surface 300 a of the outer peripheral annular wall 300 are cut in a predetermined amount (for example, several μm). Furthermore, the motor 62 rotates the main shaft 60 at a predetermined rotation speed in a clockwise direction when viewed from the +Z direction. With this action, the turning tool 64 will use the main shaft 60 as an axis and rotate clockwise at a predetermined rotation speed. Spin.

圖2所示的Y軸移動手段14係使卡盤台30往-Y方向移動，藉此如圖7所示，車刀工具64會旋削形成在外周環狀壁300的上表面300a的鍍層M，接著旋削形成在支撐銷304的上表面304a的鍍層M而使鍍層平坦化，使形成在各支撐銷304的上表面304a的鍍層M高度與形成在外周環狀壁300的上表面300a的鍍層M高度變為一致。然後，在卡盤台30上會形成如後述的平坦的保持面306（參照圖8）：由各支撐銷304的上表面304a與外周環狀壁300的上表面300a以同一平面的方式所組成。The Y-axis movement means 14 shown in FIG. 2 moves the chuck table 30 in the −Y direction, whereby the turning tool 64 rotates the plating layer M formed on the upper surface 300 a of the outer circumferential annular wall 300 as shown in FIG. 7 Then, the plating layer M formed on the upper surface 304a of the support pin 304 is rotated to flatten the plating layer, so that the height of the plating layer M formed on the upper surface 304a of each support pin 304 and the plating layer formed on the upper surface 300a of the outer circumferential annular wall 300 The M height becomes consistent. Then, a flat holding surface 306 (see FIG. 8 ), which will be described later, is formed on the chuck table 30: it is composed of the upper surface 304 a of each support pin 304 and the upper surface 300 a of the peripheral annular wall 300 in the same plane .

本發明的卡盤台30因為外周環狀壁300的上表面300a與支撐銷304的上表面304a為相同高度，且鍍層M形成在外周環狀壁300的內側面300c、外側面300d以及上表面300a，還形成在支撐銷304的側面304c與上表面304a，所以在車刀工具64旋削加工鍍層M時，形成在上表面300a與上表面304a的鍍層M會被一體地形成在內側面300c、外側面300d以及側面304c的鍍層M所補強，從而變得不易剝落。In the chuck table 30 of the present invention, the upper surface 300a of the outer circumferential annular wall 300 and the upper surface 304a of the support pin 304 have the same height, and the plating layer M is formed on the inner side 300c, the outer side 300d, and the upper surface of the outer circumferential annular wall 300 300a is also formed on the side surface 304c and the upper surface 304a of the support pin 304. Therefore, when the turning tool 64 rotates the plating layer M, the plating layer M formed on the upper surface 300a and the upper surface 304a is integrally formed on the inner surface 300c, The plating M of the outer side surface 300d and the side surface 304c is reinforced so that it does not peel off easily.

又，如圖5、7所示，支撐銷304為藉由以具有上表面304a的圓錐台或角錐台立設在吸引凹部301的底面301b，因為支撐銷304的上表面304a與側面（斜面）304c之間的角度呈鈍角，所以能使鍍層M更不易剝落。As shown in FIGS. 5 and 7, the support pin 304 is formed by standing on the bottom surface 301b of the suction recess 301 with a truncated cone or a truncated cone having an upper surface 304a, because the upper surface 304a and the side surface (inclined surface) of the support pin 304 The angle between 304c is obtuse, so it can make the plating layer M more difficult to peel off.

以下，針對使用圖1所示加工裝置1與具備圖8所示平坦的保持面306的卡盤台30以旋削板狀工件W的情況做說明。 首先，圖1所示的未載置板狀工件W的狀態的卡盤台30係移動至第一搬送手段335的附近。機械具330從第一卡匣331拉出一片板狀工件W，並將板狀工件W移動至暫置台333a。Hereinafter, a case where the plate-shaped workpiece W is rotated by using the processing apparatus 1 shown in FIG. 1 and the chuck table 30 provided with the flat holding surface 306 shown in FIG. 8 will be described. First, the chuck table 30 in a state where the plate-shaped workpiece W is not placed is moved to the vicinity of the first conveyance means 335 shown in FIG. 1. The mechanical tool 330 pulls out a plate-shaped workpiece W from the first cassette 331, and moves the plate-shaped workpiece W to the temporary table 333a.

藉由對位手段333b使板狀工件W在暫置台333a上被定中心後，第一搬送手段335則使已被定中心的板狀工件W移動至卡盤台30上。然後，如圖8所示，以卡盤台30的中心約略一致於板狀工件W的中心的方式，板狀工件W會載置於平坦的保持面306上。像這樣當板狀工件W載置於卡盤台30上，則成為如後述的狀態：板狀工件W的下表面Wb會隔著鍍層M被各支撐銷304所支撐，同時板狀工件W的下表面Wb的外周部分係隔著鍍層M被支撐在外周環狀壁300的上表面300a上。After the plate-shaped workpiece W is centered on the temporary table 333a by the positioning means 333b, the first conveying means 335 moves the centered plate-shaped workpiece W to the chuck table 30. Then, as shown in FIG. 8, the plate-shaped workpiece W is placed on the flat holding surface 306 in such a manner that the center of the chuck table 30 approximately coincides with the center of the plate-shaped workpiece W. As described above, when the plate-shaped workpiece W is placed on the chuck table 30, it will be in a state as described below: the lower surface Wb of the plate-shaped workpiece W is supported by the support pins 304 via the plating layer M, and the plate-shaped workpiece W The outer peripheral portion of the lower surface Wb is supported on the upper surface 300 a of the outer peripheral annular wall 300 via the plating layer M.

然後，吸引源36啟動而產生的吸引力會通過吸引通道303d與吸引口301c而傳達至吸引凹部301，藉此卡盤台30將板狀工件W吸引保持在保持面306上。附帶一提的是，保持面306因為先前鍍層M的旋削而成為平坦面，所以卡盤台30不會產生真空外漏。Then, the suction force generated when the suction source 36 is activated is transmitted to the suction recess 301 through the suction channel 303d and the suction port 301c, whereby the chuck table 30 suction-holds the plate-shaped workpiece W on the holding surface 306. Incidentally, the holding surface 306 becomes a flat surface due to the previous turning of the plating layer M, so the chuck table 30 does not cause vacuum leakage.

舉例而言，圖2所示的Y軸移動手段14會使吸引保持住板狀工件W的卡盤台30移動至比車刀旋削手段6的正下方還稍微靠+Y方向的位置，藉此卡盤台30會定位在旋削進給的開始位置。 車刀旋削手段6會被加工進給手段5被送往-Z方向，如圖8所示，車刀旋削手段6被定位在如後述的高度位置：成為車刀工具64的最下端的切刃641會以預定量切入板狀工件W的上表面Wa。更進一步，馬達62使主軸60以預定的旋轉速度往從+Z方向觀看為順時針的方向旋轉，伴隨此動作，車刀工具64會以主軸60為軸並以預定的旋轉速度往順時針方向旋轉。For example, the Y-axis moving means 14 shown in FIG. 2 moves the chuck table 30 that attracts and holds the plate-like workpiece W to a position slightly in the +Y direction than directly below the turning tool 6, thereby The chuck table 30 will be positioned at the beginning of the rotary feed. The turning tool 6 will be processed. The feeding means 5 is sent to the -Z direction. As shown in FIG. 8, the turning tool 6 is positioned at a height position as described below: it becomes the lowermost cutting edge of the turning tool 64 641 will cut into the upper surface Wa of the plate-shaped workpiece W by a predetermined amount. Furthermore, the motor 62 rotates the main shaft 60 at a predetermined rotation speed in a clockwise direction when viewed from the +Z direction. With this action, the turning tool 64 will use the main shaft 60 as an axis and rotate clockwise at a predetermined rotation speed. Spin.

吸引保持板狀工件W的卡盤台30係以預定的進給速度往-Y方向移動，如圖8所示，車刀工具64係旋削板狀工件W的上表面Wa並使其平坦化。又，圖1所示的厚度測量手段17會下降，接觸板狀工件W被旋削的上表面Wa而測量板狀工件W的厚度。 然後，卡盤台30會往-Y方向移動至Y軸方向的預定位置，被旋轉的車刀工具64旋削以使板狀工件W的上表面Wa整面變成平坦面。The chuck table 30 that attracts and holds the plate-shaped workpiece W moves in the −Y direction at a predetermined feed rate. As shown in FIG. 8, the turning tool 64 rotates and flattens the upper surface Wa of the plate-shaped workpiece W. In addition, the thickness measuring means 17 shown in FIG. 1 descends, and contacts the upper surface Wa of the plate-shaped workpiece W to be rotated to measure the thickness of the plate-shaped workpiece W. Then, the chuck table 30 moves to a predetermined position in the Y-axis direction in the -Y direction, and is rotated by the rotating turning tool 64 so that the entire surface of the upper surface Wa of the plate-shaped workpiece W becomes a flat surface.

本發明的卡盤台30中，卡盤台30的外周環狀壁300、吸引凹部301以及各支撐銷304係由精密陶瓷所構成，且鍍層M由無電鍍鎳所形成，藉此卡盤台30幾乎不會發生因旋削加工時的加工熱所產生的受熱變形，故能將保持的板狀工件W以平坦的保持面306（各支撐銷304的上表面304a與外周環狀壁300的上表面300a）一邊保持並一邊旋削加工為均等的厚度。In the chuck table 30 of the present invention, the outer circumferential annular wall 300 of the chuck table 30, the suction recess 301, and each support pin 304 are made of precision ceramics, and the plating layer M is formed of electroless nickel, whereby the chuck table The heat deformation due to the machining heat during the turning process hardly occurs, so the plate-shaped workpiece W can be held on a flat holding surface 306 (the upper surface 304a of each support pin 304 and the upper surface of the outer circumferential annular wall 300). The surface 300a) is turned and processed to an equal thickness while being held.

W‧‧‧板狀工件Wa‧‧‧板狀工件的上表面 Wb‧‧‧板狀工件的下表面1‧‧‧加工裝置 10‧‧‧基座11‧‧‧柱體 19‧‧‧輸入手段14‧‧‧Y軸移動手段 17‧‧‧厚度測量手段18‧‧‧支撐橋 330‧‧‧機械具331‧‧‧第一卡匣 332‧‧‧第二卡匣333a‧‧‧暫置台 333b‧‧‧對位手段334‧‧‧清洗手段 335‧‧‧第一搬送手段336‧‧‧第二搬送手段 30‧‧‧卡盤台300‧‧‧外周環狀壁 301‧‧‧吸引凹部301c‧‧‧吸引口 302‧‧‧圓柱狀的支撐銷304‧‧‧圓錐台或角錐台狀的支撐銷 34‧‧‧旋轉手段36‧‧‧吸引源 5‧‧‧加工進給手段6‧‧‧車刀旋削手段 64‧‧‧車刀工具W‧‧‧plate workpiece Wa‧‧‧upper surface of plate workpiece Wb‧‧‧Lower surface of plate-like workpiece 1‧‧‧Processing device 10‧‧‧base 11‧‧‧pillar 19‧‧‧ input means 14‧‧‧ Y axis movement means 17‧‧‧thickness measurement means 18‧‧‧support bridge 330‧‧‧Machine tool 331‧‧‧ First cassette 332‧‧‧Second cassette 333a‧‧‧Temporary stand 333b‧‧‧positioning means 334‧‧‧cleaning means 335‧‧‧ First transport means 336‧‧‧ Second transport means 30‧‧‧Chuck table 300‧‧‧Circumferential wall 301‧‧‧ Suction recess 301c‧‧‧ Suction port 302‧‧‧Cylindrical support pin 304‧‧‧Conical or pyramidal support pin 34‧‧‧ rotation means 36‧‧‧ attraction source 5‧‧‧Machining feed means 6‧‧‧Turning tool turning 64‧‧‧Turning tool

圖1係表示配設有本發明的卡盤台的加工裝置一例子的立體圖。 圖2係表示卡盤台與Y軸方向移動手段一例子的立體圖。 圖3係表示旋削手段一例子的立體圖。 圖4係表示支撐銷為圓柱形狀的卡盤台一例子的剖面圖。 圖5係表示支撐銷為圓錐台形狀或角錐台形狀的卡盤台其他例子的剖面圖。 圖6係表示無電鍍鎳裝置一例子的說明圖。 圖7係表示旋削加工卡盤台的鍍層並形成平坦的保持面的狀態的剖面圖。 圖8係說明對保持在卡盤台的平坦的保持面上的板狀工件施以旋削加工的狀態的剖面圖。FIG. 1 is a perspective view showing an example of a processing apparatus provided with a chuck table of the present invention. Fig. 2 is a perspective view showing an example of a chuck table and moving means in the Y-axis direction. FIG. 3 is a perspective view showing an example of the turning means. 4 is a cross-sectional view showing an example of a chuck table in which the support pin has a cylindrical shape. 5 is a cross-sectional view showing another example of a chuck table in which the support pin has a truncated cone shape or a truncated cone shape. 6 is an explanatory diagram showing an example of an electroless nickel plating apparatus. 7 is a cross-sectional view showing a state in which the plating layer of the chuck table is spin-processed to form a flat holding surface. 8 is a cross-sectional view illustrating a state in which a plate-shaped workpiece held on a flat holding surface of a chuck table is subjected to a turning process.

30‧‧‧卡盤台 30‧‧‧Chuck table

36‧‧‧吸引源 36‧‧‧Attraction

300‧‧‧環狀外周壁 300‧‧‧Annular peripheral wall

300a‧‧‧上表面 300a‧‧‧upper surface

300c‧‧‧內側面 300c‧‧‧Inside

300d‧‧‧外側面 300d‧‧‧Outside

301‧‧‧吸引凹部 301‧‧‧Attract recess

301b‧‧‧底面 301b‧‧‧Bottom

301c‧‧‧吸引口 301c‧‧‧Attract

303‧‧‧底板 303‧‧‧Bottom plate

303d‧‧‧吸引通道 303d‧‧‧ attraction channel

304‧‧‧支撐銷 304‧‧‧support pin

304a‧‧‧上表面 304a‧‧‧upper surface

304c‧‧‧側面 304c‧‧‧Side

305‧‧‧下表面 305‧‧‧Lower surface

L1‧‧‧假想線 L1‧‧‧Imaginary line

M‧‧‧鍍層 M‧‧‧plating

W‧‧‧板狀工件 W‧‧‧plate workpiece

Wa‧‧‧板狀工件的上表面 Wa‧‧‧Top surface of plate-shaped workpiece

Wb‧‧‧板狀工件的下表面 Wb‧‧‧The lower surface of the plate-shaped workpiece

Claims (3)

一種卡盤台，使用於吸引保持板狀工件的下表面並以車刀工具旋削加工該板狀工件的上表面的加工裝置； 該卡盤台具備： 外周環狀壁，以環狀的上表面支撐該板狀工件的下表面的外周部分； 吸引凹部，形成在該外周環狀壁的內側，且具有比該外周環狀壁的上表面還低的底面； 吸引口，形成在該吸引凹部的該底面且連通吸引源；以及， 支撐銷，避開該吸引口且等間隔地多個立設在該底面，且上表面與該外周環狀壁的上表面為相同高度； 其中，鍍層形成在該外周環狀壁的側面與上表面以及該支撐銷的側面與上表面。A chuck table, used for attracting and holding the lower surface of a plate-shaped workpiece, and a processing device for turning and processing the upper surface of the plate-shaped workpiece with a turning tool; The chuck table has: An outer circumferential wall, supporting the outer circumferential portion of the lower surface of the plate-shaped workpiece with a ring-shaped upper surface; The suction recess is formed inside the outer circumferential annular wall and has a bottom surface lower than the upper surface of the outer circumferential annular wall; A suction port formed on the bottom surface of the suction recess and communicating with the suction source; and, A support pin avoids the suction port and is erected on the bottom surface at equal intervals, and the upper surface is the same height as the upper surface of the outer circumferential annular wall; Wherein, the plating layer is formed on the side surface and upper surface of the outer peripheral annular wall and the side surface and upper surface of the support pin. 如申請專利範圍第1項所述之卡盤台，其中，該外周環狀壁、該吸引凹部以及該支撐銷係由精密陶瓷所構成，該鍍層係由無電鍍鎳所形成。The chuck table according to item 1 of the patent application range, wherein the outer peripheral annular wall, the suction recess, and the support pin are composed of precision ceramics, and the plating layer is formed of electroless nickel. 如申請專利範圍第1項或第2項所述之卡盤台，其中，該支撐銷是以具有該支撐銷的上表面的圓錐台或角錐台從該底面立設而成。The chuck table as described in item 1 or item 2 of the patent application scope, wherein the support pin is formed by a truncated cone or a truncated pyramid table having an upper surface of the support pin from the bottom surface.
TW108117713A 2018-05-25 2019-05-22 Chuck table TWI809107B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-100421 2018-05-25
JP2018100421A JP7108464B2 (en) 2018-05-25 2018-05-25 chuck table

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TWI809107B TWI809107B (en) 2023-07-21

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CN113649842B (en) * 2021-08-30 2022-06-28 成都工贸职业技术学院 Vacuum chuck clamping convenient to equipment
JP2023077510A (en) 2021-11-25 2023-06-06 株式会社ディスコ Processing device

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JP2800188B2 (en) * 1988-07-20 1998-09-21 株式会社ニコン Substrate suction device
JPH09309037A (en) * 1996-05-24 1997-12-02 Hitachi Denshi Ltd Adsorbing fixing device for thin plate work
JPH11314470A (en) * 1998-05-02 1999-11-16 Think Laboratory Co Ltd Intaglio plate having cushion property
JP2001054888A (en) * 1999-06-11 2001-02-27 Kuraitekku Kk Chuck and suction disc for plate-like material
JP2001203245A (en) 1999-08-30 2001-07-27 Ibiden Co Ltd Wafer prober and ceramic substrate used therefor
JP2005333067A (en) 2004-05-21 2005-12-02 Disco Abrasive Syst Ltd Processing apparatus for plate-like article
JP5209403B2 (en) 2008-08-07 2013-06-12 株式会社ディスコ Processing equipment equipped with a bite tool
JP2014075372A (en) * 2010-12-27 2014-04-24 Canon Anelva Corp Electrostatic attraction device
KR102169388B1 (en) * 2012-11-30 2020-10-23 가부시키가이샤 니콘 Suction apparatus, carry-in method, conveyance system, light exposure device, and device production method
JP6650345B2 (en) 2016-05-26 2020-02-19 日本特殊陶業株式会社 Substrate holding device and method of manufacturing the same
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