CN110534471A - Chuck table - Google Patents

Chuck table Download PDF

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Publication number
CN110534471A
CN110534471A CN201910434221.2A CN201910434221A CN110534471A CN 110534471 A CN110534471 A CN 110534471A CN 201910434221 A CN201910434221 A CN 201910434221A CN 110534471 A CN110534471 A CN 110534471A
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CN
China
Prior art keywords
chuck table
annular wall
fulcrum post
coating
periphery annular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201910434221.2A
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Chinese (zh)
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CN110534471B (en
Inventor
森俊
波冈伸一
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Disco Corp
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Disco Corp
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Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of CN110534471A publication Critical patent/CN110534471A/en
Application granted granted Critical
Publication of CN110534471B publication Critical patent/CN110534471B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Abstract

Chuck table is provided.In pin chuck table, the coating that will not be removed in turnery processing is formed in the material that thermal deformation is less likely to occur.Attracting holding is carried out in the lower surface (Wb) to plate workpiece (W) and chuck table (30) used in the processing unit (plant) (1) of turnery processing is carried out to upper surface (Wa) using cutter tool (64) and includes periphery annular wall (300), and the outer peripheral portion of plate workpiece lower surface is supported using cricoid upper surface (300a)；Attract recess portion (301), be formed in the inside of periphery annular wall (300), there is the bottom surface (301b) lower than the upper surface of periphery annular wall；Suction port (301c) is formed in the bottom surface for attracting recess portion (301), is connected to source (36) are attracted；And fulcrum post (304), its avoid suction port on bottom surface (301b) and equally spaced erect be provided with it is multiple, the upper surface (304a) of fulcrum post and the upper surface (300a) of periphery annular wall (300) are sustained height, are formed with coating (M) on the side (300c, 300d) of peripheral ring shape wall and upper surface (300a) and on the side (304c) of fulcrum post (304) and upper surface (304a).

Description

Chuck table
Technical field
The present invention relates to the chuck tables kept to plate workpiece.
Background technique
Chuck table used in the processing unit (plant) of turnery processing is being carried out for example to plate workpiece using cutter tool Include: periphery ring-type maintaining part is formed in peripheral side；Attract recess portion, is formed in the inside of the periphery ring-type maintaining part, with Attract unit connection；And multiple fulcrum posts, they are formed in the attraction recess portion (for example, referring to patent document 1).Such structure At chuck table plate workpiece is supported by multiple fulcrum posts, since the bearing area of fulcrum post is smaller, thus The foreign matters such as dust will not be sandwiched between the fulcrum post and plate workpiece, can flatly keep plate workpiece.
Patent document 1: Japanese Unexamined Patent Publication 2005-333067 bulletin
Chuck table generates mechanically deform due to changing year in year out, and the height of the upper surface of fulcrum post fine conjugates. Therefore, by cutter tool to upper surface (upper surface of periphery ring-type maintaining part and the upper table of each fulcrum post of chuck table Face) it carries out turning and keeps the height of fulcrum post consistent.
Here, in order to which upper surface of the cutter tool easy to use to fulcrum post carries out turning, on the upper surface of fulcrum post It is formed with a thickness of the coating of 200 μm or so of nickel etc..Turning regularly is carried out to the coating according to every number μm and makes to support The height of pin is consistent.
When carrying out turning to coating using cutter tool in this way, have the following problems: to coating applied force, coating meeting It is stripped.In addition, being appropriate for being electroplated to form the coating with a thickness of 200 μm, but the material for being able to carry out plating is easy hair Heat deformation.Therefore, it when each portion of chuck table is formed by the material for being able to carry out plating, has the following problems: by In processing heat generated in cutter turning, thermal deformation occurs for fulcrum post etc., and kept plate workpiece can not be made to become equal Even thickness.
There is following project as a result, in pin chuck table, is formed not in the material that thermal deformation is less likely to occur The coating that can be removed in turnery processing.
Summary of the invention
The purpose of the present invention is to provide the chuck tables kept to plate workpiece, and thermal deformation is being less likely to occur Material on form the coating that will not remove in turnery processing.
The present invention for solving the above subject is chuck table, is used in and attracts the lower surface of plate workpiece It keeps and is carried out in the processing unit (plant) of turnery processing using upper surface of the cutter tool to plate workpiece, wherein the chucking work Platform includes periphery annular wall, is supported using outer peripheral portion of the cricoid upper surface to the lower surface of the plate workpiece；It inhales Draw recess portion, be formed in the inside of the periphery annular wall, there is the bottom surface lower than the upper surface of the periphery annular wall；Suction port, It is formed on the bottom surface of the attraction recess portion, is connected to source is attracted；And fulcrum post, the suction port is avoided on the bottom surface And equally spaced erect and be provided with multiple, the upper surface of the upper surface of the fulcrum post and the periphery annular wall is sustained height, In Coating is formed on the side and upper surface of the periphery annular wall and on the side and upper surface of the fulcrum post.
It is preferred that the periphery annular wall, the attraction recess portion and the fulcrum post are made of fine ceramics, the coating It is formed using chemical nickel plating.
It is arranged it is preferred that the fulcrum post is erect in a manner of the frustum of a cone or the frustum of a pyramid from the bottom surface, the frustum of a cone or pyramid Platform has the upper surface.
For chuck table of the invention, the upper surface of periphery annular wall and the upper surface of fulcrum post are sustained height, It is formed with coating on the side and upper surface of peripheral ring shape wall and on the side and upper surface of fulcrum post, therefore is utilizing knife When tool tool carries out turnery processing to coating, coating is not easily peeled off.
In addition, the periphery annular wall of chuck table, attraction recess portion and fulcrum post are made of fine ceramics, coating is utilized Chemical nickel plating is formed, so that chuck table is not easy the heat of the processing when turnery processing due to thermal deformation occurs, therefore can be incited somebody to action The plate workpiece turnery processing kept is at uniform thickness.
Fulcrum post is in a manner of the frustum of a cone or the frustum of a pyramid from the bottom surface setting setting for attracting recess portion, the frustum of a cone or the frustum of a pyramid With the upper surface, so that the angle between the upper surface of fulcrum post and side (inclined-plane) is obtuse angle, therefore can be more not It is easily peeled off coating.
Detailed description of the invention
Fig. 1 is the perspective view for showing an example for the processing unit (plant) for being equipped with chuck table of the invention.
Fig. 2 is the perspective view for showing an example of chuck table and Y direction mobile unit.
Fig. 3 is the perspective view for showing an example of Turning cells.
Fig. 4 is the cross-sectional view for showing an example for the chuck table that fulcrum post is cylindrical shape.
Fig. 5 is other the cross-sectional view for showing the chuck table that fulcrum post is truncated cone shape or frustum of a pyramid shape.
Fig. 6 is the explanatory diagram for showing an example of chemical nickel plating device.
Fig. 7 is the section view for showing the coating progress turnery processing to chuck table and forming the state of flat retaining surface Figure.
Fig. 8 is that the plate workpiece for illustrating to be kept in the flat retaining surface to chuck table implements the shape of turnery processing The cross-sectional view of state.
Label declaration
W: plate workpiece；Wa: the upper surface of plate workpiece；Wb: the lower surface of plate workpiece；1: processing unit (plant)；10: base Seat；11: column；19: input unit；14:Y axis mobile unit；17: thickness measuring unit；18: supporting bridge；330: robot；331: First box；332: the second boxes；333a: workbench is temporarily put；333b: bit cell；334: cleaning unit；335: the first conveyings are single Member；336: the second transport unit；30: chuck table；300: periphery annular wall；301: attracting recess portion；301c: suction port； 302: columned fulcrum post；304: the fulcrum post of the frustum of a cone or the frustum of a pyramid；34: rotary unit；36: attracting source；5: process into To unit；6: cutter Turning cells；64: cutter tool.
Specific embodiment
Processing unit (plant) 1 shown in FIG. 1 is by 6 pairs of chuck works of the invention of cutter Turning cells with cutter tool 64 Make the device that the plate workpiece W kept on platform 30 carries out turnery processing.Front (-Y direction on the pedestal 10 of processing unit (plant) 1 Side) region as the handling for carrying out plate workpiece W relative to chuck table 30, the rear (+Y direction side) on pedestal 10 is made For the region of the turnery processing for the plate workpiece W for kept on chuck table 30 by cutter Turning cells 6.
It is circular semiconductor wafer that plate workpiece W shown in FIG. 1, which is, for example, by the shape of base material of silicon, but is not limited to This.Also, machined surface of the upper surface Wa of plate workpiece W as turnery processing.The lower surface W b of plate workpiece W is stuck not The protection band of diagram and protected.
The input unit for inputting processing conditions etc. for operator is equipped in the front side of the pedestal 10 of processing unit (plant) 1 19.In addition, the front side on pedestal 10 is configured with: the first box 331 stores the plate workpiece W before turnery processing； And second box 332, the plate workpiece W completed to turnery processing are stored.Between the first box 331 and the second box 332 It is equipped with robot 330, which moves out the plate workpiece W before turnery processing from the first box 331, and by vehicle The plate workpiece W completed the process is cut to move in into the second box 332.
It is provided in the movable area of robot 330 and temporarily puts workbench 333a, In for what the plate workpiece W before processing was temporarily put It temporarily puts and is equipped with bit cell 333b on workbench 333a.Bit cell 333b will be from the first box 331 using the alignment pin of undergauge In move out and be placed in temporarily put workbench 333a plate workpiece W contraposition (centering) in defined position.
The cleaning cleaned to the plate workpiece W that turnery processing is completed is equipped in the movable area of robot 330 Unit 334.Cleaning unit 334 is, for example, the rotary cleaning device of one chip.
It is equipped the first transport unit 335 near bit cell 333b, is equipped near cleaning unit 334 Two transport unit 336.Before first transport unit 335 will be placed in the temporary turnery processing putting workbench 333a and being felt relieved Plate workpiece W is transported to chuck table 30, and the turnery processing that the second transport unit 336 is kept chuck table 30 is completed Plate workpiece W transport to cleaning unit 334.
As shown in Fig. 2, surrounded around chuck table 30 by the cover 39 that can be moved together with chuck table 30, and And chuck table 30 being capable of the axle center rotation in direction about the z axis and being disposed in rotary unit 34 of lower section of chuck table 30 Turn.
As shown in Figure 1 and Figure 2, it is arranged in the lower section of chuck table 30, cover 39 and the corrugated cover 39a linked with cover 39 There is the Y-axis mobile unit 14 for moving chuck table 30 in the Y-axis direction.Y-axis mobile unit 14 shown in Fig. 2 includes rolling Ballscrew 140, the axle center with Y direction；A pair of guide rails 141, they are arranged to parallel with ball-screw 140；Motor 142, link with ball-screw 140, rotates ball-screw 140；And movable plate 143, nut possessed by inside with Ball-screw 140 screws togather, and the bottom of movable plate 143 is slided on guide rail 141, when motor 142 rotates ball-screw 140 When, along with this, movable plate 143 is guided and moved in the Y-axis direction by guide rail 141, by rotary unit on movable plate 143 34 and the chuck table 30 and cover that are arranged 39 move in the Y-axis direction.In addition, corrugated cover 39a is with chuck table 30 It moves and stretches in the Y-axis direction.
As shown in Figure 1, rear portion side (+Y direction side) setting on pedestal 10 is provided with column 11, in the front surface of column 11 Be equipped with processing feed unit 5, the processing feed unit 5 by cutter Turning cells 6 relative to chuck table 30 it is separate or Processing feeding is carried out in close Z-direction (vertical direction).Fig. 1, processing feed unit 5 shown in Fig. 3 include ball-screw 50, the axle center with Z-direction；A pair of guide rails 51, they are arranged to parallel with ball-screw 50；Motor 52, with rolling The upper end of ballscrew 50 links, and rotates ball-screw 50；Lifter plate 53, internal nut are screwed togather with ball-screw 50, are risen Side and 51 sliding contact of guide rail of plate 53 are dropped；And rest 54, it is fixed on lifter plate 53, cutter Turning cells 6 are carried out It keeps, as motor 52 rotates ball-screw 50, lifter plate 53 is guided and moved back and forth in the Z-axis direction by guide rail 51, The cutter Turning cells 6 for being held in rest 54 carry out processing feeding in the Z-axis direction.
Cutter Turning cells 6 include main shaft 60, and axial direction is vertical direction (Z-direction)；Shell 61, by main shaft 60 Bearing is that can rotate；Motor 62 makes the rotation driving of main shaft 60；The cutter emery wheel 63 of round, under main shaft 60 End connection；And cutter tool 64, cutter emery wheel 63 is installed in a manner of assemble and unassemble.
Embedding embedding hole 630, cutter tool 64 are inserted as shown in figure 3, being equipped on cutter emery wheel 63 and inserting for cutter tool 64 The knife handle 640 of rectangular-shape is included, inserts to be embedded to and inserts in embedding hole 630 and be fixed by fixing bolt 631；And cutting blade 641, the pointed lower end for being formed in knife handle 640.Cutting blade 641 is, for example, to bake the abrasive grains such as diamond and defined bonding agent Obtained by.
As shown in Figure 1, be formed on pedestal 10 by stand up wall portion 100 on pedestal 10 and column 11 surround it is recessed Shape part, the concave part are provided to plate when the ejected wash water incorporating section 101 is by turnery processing as ejected wash water incorporating section 101 The ejected wash water of the processing stand of workpiece W and cutter tool 64 is caught from the ejected wash water that chuck table 30 flows down.It is stored in ejected wash water Portion 101 is formed with discharge outlet 102, and the ejected wash water comprising turning scrap etc. is discharged to drain vessel (not shown) etc. from discharge outlet 102 In.
It is equipped with above the movement routine of chuck table 30 and the thickness of the plate workpiece W after turning is measured Thickness measuring unit 17.Thickness measuring unit 17 is supported by supporting bridge 18, and the supporting bridge 18 is according to leap chuck table 30 Mode stand up on pedestal 10.Thickness measuring unit 17 is the linear survey for the Direct Action Type that can be moved in the Z-axis direction Instrument is measured, but not limited to this, such as being also possible to can be in a non-contact manner to plate workpiece W with light-projecting portion and acceptance part The optical sensor of reflection-type that measures of thickness.Such as thickness measuring unit 17 can move back and forth in the X-axis direction.
Fig. 2, chuck table 30 of the invention shown in Fig. 4, which have, overlooks circular bottom plate 303, periphery annular wall 300 It integrally erects and is arranged to +Z direction from the upper surface outer region of bottom plate 303.The ring of periphery annular wall 300 shown in Fig. 4 It is formed with coating M according to the thickness of regulation on the upper surface 300a of shape, periphery annular wall 300 utilizes cricoid across coating M Upper surface 300a supports the outer peripheral portion of the lower surface W b of plate workpiece W.
In addition, being also formed with according to the thickness of regulation on the lateral surface 300d and medial surface 300c of peripheral ring shape wall 300 Coating M.
The space for being formed in the inside of periphery annular wall 300 becomes with lower than the upper surface 300a of periphery annular wall 300 Bottom surface 301b (upper surface of bottom plate 303) attraction recess portion 301.For example in week on the bottom surface 301b of the attraction recess portion 301 It is spaced as defined in spaced up and is equably equipped with suction port 301c.The arranging quantity example shown in Fig. 4 of suction port 301c It is four in son, but it is not limited to this.
Be internally provided with attraction road 303d in bottom plate 303, attraction road 303d is connected to each suction port 301c, and with by The attraction source 36 that the device for vacuum generation such as vacuum pump or injector are constituted is connected to.
Suction port 301c is avoided in attraction recess portion 301 and is equally spaced erect on the 301b of bottom surface and is provided with multiple bearings Pin 302, the upper surface 302a of each fulcrum post 302 and the upper surface 300a of periphery annular wall 300 are aligned in sustained height.In addition, It is formed with coating M on the upper surface 302a of each fulcrum post 302, is formed in the cricoid upper surface 300a of periphery annular wall 300 Coating M and be formed in each fulcrum post 302 upper surface 302a coating M become roughly the same thickness.
In addition, being also formed with coating M according to the thickness of regulation on the side 302c of each fulcrum post 302.
For example, periphery annular wall 300, the bottom surface 301b (i.e. bottom plate 303) for attracting recess portion 301 and fulcrum post 302 are by essence Fine ceramic is constituted.Fine ceramics is, for example, the cordierite of extremely low thermal expansion coefficient and thermal shock resistance and mechanical strength (2MgO·2Al2O3·5SiO2)。
In the example shown in Figure 4, the shape of each fulcrum post 302 is cylinder, but more preferably shape is as shown in Figure 5 The fulcrum post 304 of the frustum of a cone or the frustum of a pyramid.Angle between the upper surface 304a of fulcrum post 304 and side (inclined-plane) 304c is blunt Angle.
Hereinafter, medial surface 300c, lateral surface 300d to the periphery annular wall 300 of chuck table 30 shown in Fig. 5 It is illustrated with an example for forming coating M on the side 304c and upper surface 304a of upper surface 300a and fulcrum post 304.At this In embodiment, coating M is for example formed using chemical nickel plating device 2 shown in fig. 6.In addition, the formation of coating M is not limited to The example carried out using chemical nickel plating device 2 shown in fig. 6, being formed by coating M can also be made of the metal other than nickel.
The plating slot 20 of chemical nickel plating device 2 shown in fig. 6 stores nickel sulfate, nitre comprising reducing agent and pH adjustment liquid The nickel-plating liquids such as sour nickel or nickel sulfamic acid.Plating slot 20 is disposed in thermostatic water bath 21, can adjust the temperature of nickel-plating liquid.
For plating slot 20, metallic nickel can be supplemented from container A by each constant displacement pump A1, B1, C1, also from container B supplement Former agent adjusts liquid from container C supplement pH.
When chemical plating reaction occurs for the nickel-plating liquid in plating slot 20, in liquid, occurred by the electronics of reducing agent The reduction of metal ion is precipitated, and nickel concentration, reductant concentration and the pH value in liquid change.In order on chuck table 30 The coating M for forming uniform thickness, needs for a long time to keep these parameters in a certain range, for this purpose, chemical nickel plating device 2 With test section 27.
For test section 27 for example with plating controller 270 and sink 271, which will be derived from the inspection in plating slot 20 It looks into liquid and is cooled to defined temperature (checking temperature).
The inspection liquid being derived from plating slot 20 is flowed through in flow path 272 and in sink 271 by pump (not shown) After temperature as defined in dropping to, which is fed through plating controller 270.
Plating controller 270 continuously measures the nickel concentration for checking liquid using colorimeter, continuously measures pH using pH meter Value sends the signal to each constant displacement pump A1, B1, C1 via wiring 274 when each value deviates setting value.Then, each constant displacement pump A1, B1, C1 are acted and metallic nickel, reducing agent or pH adjustment liquid are replenished to plating slot 20 according to the amount of regulation respectively, into The parameter of nickel-plating liquid in row plating slot 20 adjusts.In addition, when each numerical value of the nickel-plating liquid in plating slot 20 restores to setting value When, stop signal is sent from plating controller 270 to each constant displacement pump A1, B1, C1, automatically stops supply.
Nickel-plating liquid in plating slot 20 is stirred the rotation of flabellum 221 by the rotary driving sources such as motor 220, from And make whole even concentration.
The measurement sensor 250 being electrically connected with film thickness monitor 25 is immersed in plating slot 20.Film thickness monitor 25 can It is measured by thickness and plating rate of the measurement sensor 250 to the coating for being plated object, peace is for example utilized in principle The transmission frequency of quartz crystal on sensor head loaded on measurement sensor 250 decays with coating is precipitated on oscillator. The thickness for the coating that film thickness monitor 25 converses plating rate according to the rate of decay of the transmission frequency and is plated object is gone forward side by side Row display.
It is cyclic annular in the periphery using the chemical nickel plating device 2 constituted as described above chuck table 30 shown in Fig. 5 On medial surface 300c, lateral surface 300d and the upper surface 300a of wall 300 and the side 304c and upper surface 304a of fulcrum post 304 In the case where forming coating M, such as masking, the masking energy are implemented to each suction port 301c of chuck table 30 shown in fig. 5 Prevent nickel-plating liquid from entering in attraction road 303d.
Then, chuck table 30 shown in fig. 5 is impregnated in from the upper surface side 304a of fulcrum post 304 shown in fig. 6 In nickel-plating liquid in plating slot 20.In addition, the state that the lower surface 305 for becoming at least chuck table 30 is exposed from nickel-plating liquid. In addition, for example only the part more upper than imaginary line L1 of chuck table 30 shown in fig. 5 (can also be leaned on than bottom surface 301b The part of upside) it is impregnated in nickel-plating liquid.In this case, it does not need to cover suction port 301c, periphery annular wall 300 Lateral surface 300d only forms coating M in the part more upper than imaginary line L1.
By the electronics from reducing agent in nickel-plating liquid, the periphery annular wall 300 of chuck table 30 shown in Fig. 5 Medial surface 300c, lateral surface 300d and upper surface 300a and fulcrum post 304 side 304c and upper surface 304a on, nickel from Son is restored with uniform thickness and is precipitated.Also, it as previously described above, is carried out on one side by test section 27 shown in fig. 6 The adjustment of each parameter of nickel-plating liquid, the temperature adjustment (such as remaining about 70 DEG C) of nickel-plating liquid and by film thickness monitor 25 into The thickness of row coating M monitors, carries out the chemical nickel plating of defined time (such as 2 days) on one side, is formed shown in fig. 5 defined thick Spend the coating M of (for example, 200 μm).
In addition, can be sent out when the temperature of nickel-plating liquid is for example remained 90 degree and carries out the formation of coating M as previous The thermal deformation of raw chuck table 30, therefore the temperature of nickel-plating liquid is remained about 70 degree preferably as present embodiment.
Hereinafter, being illustrated using Fig. 1, Fig. 2 and Fig. 7 to following situation: to 30 (example of chuck table shown in Fig. 7 Such as the chuck table 30 moved out in chemically nickel plating apparatus 2) coating M carry out turning and formed on chuck table 30 flat Smooth retaining surface.
For example, Y-axis mobile unit 14 shown in Fig. 2, which is moved to the chuck table for being set to processing unit (plant) 1 30, compares Fig. 1 Shown in the underfaces of cutter Turning cells 6 slightly lean on the position of +Y direction, thus by chuck table 30 be positioned at turning into The starting position given.
Cutter Turning cells 6 are fed to -Z direction by processing feed unit 5, as shown in fig. 7, by cutter Turning cells 6 are positioned at being cut into as the lowermost cutting blade 641 according to the amount (such as several μm) of regulation for cutter tool 64 are made to be formed in branch Consign 304 upper surface 304a coating M and be formed in periphery annular wall 300 upper surface 300a coating M height and position. In addition, motor 62 makes main shaft 60 be seen as rotating on clockwise direction from +Z direction according to the rotation speed of regulation, with this Together, cutter tool 64 is that axis is rotated according to the rotation speed of regulation in the clockwise direction with main shaft 60.
Y-axis mobile unit 14 shown in Fig. 2 keeps chuck table 30 mobile to -Y direction, thus as shown in fig. 7, toolsmith Have 64 couples of coating M being formed on the upper surface 300a of periphery annular wall 300, then to the upper surface for being formed in fulcrum post 304 Coating M on 304a carries out turning and is planarized, and makes to be formed in the coating M of a on the upper surface 304 of each fulcrum post 304 Height is aligned with the height of the coating M on the upper surface 300a for being formed in periphery annular wall 300.Also, in chuck table 30 What upper formation was made of the upper surface 300a of the upper surface 304a of each fulcrum post 304 and periphery annular wall 300 becomes same plane And flat retaining surface 306 (referring to Fig. 8).
In chuck table 30 of the invention, the upper surface 300a of periphery annular wall 300 and the upper surface of fulcrum post 304 304a is sustained height, on the medial surface 300c, lateral surface 300d and upper surface 300a of peripheral ring shape wall 300 and fulcrum post It is formed with coating M on 304 side 304c and upper surface 304a, therefore adds carrying out turning to coating M using cutter tool 64 In working hour, the coating M being formed on upper surface 300a and upper surface 304a is by being integrally formed in medial surface 300c, lateral surface The coating M of 300d and side 304c is strengthened, to be not easily peeled off.
In addition, as shown in Figure 5, Figure 7, fulcrum post 304 is in a manner of the frustum of a cone or the frustum of a pyramid from the bottom surface for attracting recess portion 301 301b erects setting, and the frustum of a cone or the frustum of a pyramid have upper surface 304a, thus the upper surface 304a of fulcrum post 304 and side Angle between (inclined-plane) 304c is obtuse angle, therefore can make the more difficult removing of coating M.
Hereinafter, to processing unit (plant) 1 shown in FIG. 1 and the chucking work shown in Fig. 8 with flat retaining surface 306 is used The case where platform 30 carries out turning to plate workpiece W is illustrated.
Firstly, the chuck table 30 for the state for not loading plate workpiece W shown in FIG. 1 is moved to the first transport unit Near 335.Robot 330 pulls out a plate workpiece W from the first box 331, is moved to plate workpiece W and temporarily puts workbench 333a。
By bit cell 333b, after temporarily putting and being felt relieved on workbench 333a to plate workpiece W, first is removed Unit 335 is sent to be moved to the plate workpiece W to be felt relieved on chuck table 30.Then, as shown in figure 8, according to chuck Plate workpiece W is placed in flat retaining surface 306 by the substantially uniform mode in the center of workbench 30 and the center of plate workpiece W On.When plate workpiece W is placed on chuck table 30 in this way, become following state: the lower surface W b of plate workpiece W It is supported by each fulcrum post 304 across coating M, and the outer peripheral portion of the lower surface W b of plate workpiece W is in peripheral ring shape wall It is supported on 300 upper surface 300a across coating M.
Then, pass through attraction road 303d and suction port 301c by the way that source 36 will be attracted to carry out acting the attraction generated It is transferred to and attracts recess portion 301, so that chuck table 30 carries out attracting holding to plate workpiece W in retaining surface 306.In addition, The turning of coating M of the retaining surface 306 before becomes flat surface, therefore chuck table 30 will not generate vacuum leak.
For example, Y-axis mobile unit 14 shown in Fig. 2 moves the chuck table 30 for carrying out attracting holding to plate workpiece W Move to the underface than cutter Turning cells 6 and slightly lean on the position of +Y direction, thus by chuck table 30 be positioned at turning into The starting position given.
Cutter Turning cells 6 are fed by processing feed unit 5 to -Z direction, as shown in figure 8, by cutter Turning cells 6 It is positioned at the upper surface Wa for being cut into plate workpiece W according to the amount of regulation as the lowermost cutting blade 641 for making cutter tool 64 Height and position.In addition, motor 62 makes main shaft 60 be seen as clockwise direction from +Z direction according to the rotation speed of regulation Upper rotation, along with this, cutter tool 64 is that axis is revolved according to the rotation speed of regulation in the clockwise direction with main shaft 60 Turn.
The chuck table 30 for carrying out attracting holding to plate workpiece W is mobile to -Y direction according to the feed speed of regulation, As shown in figure 8, cutter tool 64 carries out turning to the upper surface Wa of plate workpiece W and planarizes.In addition, shown in FIG. 1 Thickness measuring unit 17 declines, and contacts with the upper surface Wa after the turning of plate workpiece W and surveys to the thickness of plate workpiece W Amount.
Then, chuck table 30 is moved to the defined position of Y direction to -Y direction, passes through the cutter tool of rotation 64 carry out turning, so that the entire upper surface Wa of plate workpiece W becomes flat surface.
In chuck table 30 of the invention, the periphery annular wall 300 of chuck table 30 attracts recess portion 301 and each Fulcrum post 304 is made of fine ceramics, and coating M is formed using chemical nickel plating, so that chuck table 30 hardly occurs The plate workpiece W kept can be utilized flat guarantor by thermal deformation caused by processing heat when turnery processing It holds face 306 (the upper surface 304a of each fulcrum post 304 and the upper surface 300a of periphery annular wall 300) to be kept, and by plate Shape workpiece W turnery processing is at uniform thickness.

Claims (3)

1. a kind of chuck table is used in and carries out attracting holding to the lower surface of plate workpiece and utilize cutter tool to plate The upper surface of workpiece carries out in the processing unit (plant) of turnery processing, wherein
The chuck table includes
Periphery annular wall is supported using outer peripheral portion of the cricoid upper surface to the lower surface of the plate workpiece；
Attract recess portion, be formed in the inside of the periphery annular wall, there is the bottom surface lower than the upper surface of the periphery annular wall；
Suction port is formed on the bottom surface of the attraction recess portion, is connected to source is attracted；And
Fulcrum post avoids the suction port on the bottom surface and equally spaced erects and be provided with multiple, the upper surface of the fulcrum post Upper surface with the periphery annular wall is sustained height,
Coating is formed on the side and upper surface of the periphery annular wall and on the side and upper surface of the fulcrum post.
2. chuck table according to claim 1, wherein
The periphery annular wall, the attraction recess portion and the fulcrum post are made of fine ceramics, and the coating utilizes chemistry Nickel plating is formed.
3. chuck table according to claim 1 or 2, wherein
The fulcrum post, which is erect in a manner of the frustum of a cone or the frustum of a pyramid from the bottom surface, to be arranged, and the frustum of a cone or the frustum of a pyramid have institute State upper surface.
CN201910434221.2A 2018-05-25 2019-05-23 Chuck workbench Active CN110534471B (en)

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CN113649842B (en) * 2021-08-30 2022-06-28 成都工贸职业技术学院 Vacuum chuck clamping convenient to equipment
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