TWI838595B - Grinding device - Google Patents

Grinding device Download PDF

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TWI838595B
TWI838595B TW109142697A TW109142697A TWI838595B TW I838595 B TWI838595 B TW I838595B TW 109142697 A TW109142697 A TW 109142697A TW 109142697 A TW109142697 A TW 109142697A TW I838595 B TWI838595 B TW I838595B
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grinding
wafer
grinding stone
wafers
remaining amount
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TW109142697A
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TW202123332A (en
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万波秀年
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日商迪思科股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/34Accessories
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Machine Tool Sensing Apparatuses (AREA)
  • Polarising Elements (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Disintegrating Or Milling (AREA)

Abstract

[課題]在磨削裝置中,在不更換磨石的情形下,完成對片匣內全部的晶圓磨削加工。 [解決手段]一種磨削裝置,具備:加工條件設定部,設定包含磨石類型與磨削進給速度之加工條件;消耗量資料,表示以所設定之加工條件來磨削一片晶圓時的磨石的消耗量;晶圓片數設定部,設定已收納於片匣之晶圓的片數;累積消耗量計算部,參照消耗量資料,並藉由公式來計算將已收納於片匣之晶圓全部磨削時的磨石的累積消耗量,其中前述公式是:每一片晶圓的磨石的消耗量×已設定於晶圓片數設定部之晶圓的片數;剩餘量辨識部,辨識磨石的剩餘量;及判斷通知部,在加工開始前,若從所辨識出的磨石剩餘量扣除掉所計算出的累積消耗量後的值已成為磨石剩餘量容許值以下時,即判斷為磨石會在片匣內全部的晶圓的磨削完成前耗盡並進行通知。[Topic] In a grinding device, grinding of all wafers in a cassette is completed without replacing the grinding stone. [Solution] A grinding device comprises: a processing condition setting unit for setting processing conditions including grinding stone type and grinding feed speed; consumption data indicating the consumption of the grinding stone when grinding one wafer under the set processing conditions; a wafer number setting unit for setting the number of wafers stored in the cassette; and a cumulative consumption calculation unit for referring to the consumption data and calculating the cumulative consumption of the grinding stone when grinding all the wafers stored in the cassette by a formula. The formula is: the grinding stone consumption of each wafer × the number of wafers set in the wafer number setting unit; the remaining amount identification unit identifies the remaining amount of the grinding stone; and the judgment notification unit, before the start of processing, if the value obtained by deducting the calculated cumulative consumption from the identified remaining amount of the grinding stone has become below the allowable value of the remaining amount of the grinding stone, it is judged that the grinding stone will be consumed before the grinding of all the wafers in the cassette is completed and a notification is made.

Description

磨削裝置Grinding device

本發明是有關於一種以磨削磨石來磨削晶圓的磨削裝置。The present invention relates to a grinding device for grinding a wafer using a grinding stone.

以磨削磨石對已保持於保持機構之晶圓進行磨削的磨削裝置,因為會因磨削晶圓而使磨削磨石磨耗,所以在磨削磨石耗盡前即使是在實施加工的期間中,仍然會為了更換磨削磨石而通知作業人員。並且,在出現該通知後,作業人員會將磨削磨石更換為新的磨削磨石。In a grinding device that grinds a wafer held in a holding mechanism with a grinding stone, the grinding stone is worn out by grinding the wafer, so before the grinding stone is worn out, even during actual operation, the operator is notified to replace the grinding stone. And after the notification, the operator replaces the grinding stone with a new grinding stone.

如例如專利文獻1所揭示地,在磨削加工中,裝置會以逐次且即時的方式辨識磨削磨石的剩餘量,且進一步於每磨削一片晶圓時,從該磨削磨石的剩餘量扣除掉從磨削結束時之磨削機構的高度所計算出的磨石消耗量後,若磨削磨石的剩餘量變得比事先設定的界限值更小的話即會進行上述通知。 先前技術文獻 專利文獻As disclosed in Patent Document 1, for example, during grinding, the device recognizes the remaining amount of the grinding stone in a sequential and real-time manner, and further, when grinding each wafer, after deducting the grinding stone consumption calculated from the height of the grinding mechanism at the end of grinding from the remaining amount of the grinding stone, the above notification is made if the remaining amount of the grinding stone becomes smaller than a pre-set limit value. Prior Art Documents Patent Documents

專利文獻1:日本特開2015-036170號公報Patent document 1: Japanese Patent Application Publication No. 2015-036170

發明欲解決之課題Invention Problems to be Solved

在磨削裝置中,是例如在晶圓片匣收納有25片晶圓,且從片匣中將晶圓一片一片地取出而連續地進行磨削。從而,若在例如磨削5片晶圓時發出上述之通知的話,會成為在將25片晶圓磨削完畢的中途更換磨削磨石之情形。In the grinding device, for example, 25 wafers are stored in a wafer cassette, and the wafers are taken out from the cassette one by one and ground continuously. Therefore, if the above notification is issued when, for example, 5 wafers are ground, the grinding stone will be replaced in the middle of grinding 25 wafers.

並且,由於更換磨削磨石,而變得暫時在加工室內沒有旋轉的磨削磨石、或將加工室向外部氣體解放,藉此會在加工室內的溫度上產生變動。有時會因該溫度變動而導致在更換磨削磨石之前與之後,磨削後之晶圓的厚度在每個晶圓上不同。 據此,有以下課題:在以磨削磨石磨削晶圓的磨削裝置中,在不更換磨削磨石的情形下,完成片匣內之全部的晶圓的磨削加工。 用以解決課題之手段Furthermore, when the grinding stone is replaced, the grinding stone in the processing chamber temporarily stops rotating, or the processing chamber is released to the outside air, which causes a change in the temperature in the processing chamber. This temperature change sometimes causes the thickness of the ground wafer to be different for each wafer before and after the grinding stone is replaced. Based on this, there is the following problem: In a grinding device that grinds wafers with a grinding stone, the grinding process of all wafers in a wafer cassette is completed without replacing the grinding stone. Means for solving the problem

用於解決上述課題之本發明是一種磨削裝置,其具備:保持機構,藉由保持面來保持晶圓;磨削機構,裝設磨削磨石並對已保持於該保持機構之晶圓進行磨削;磨削進給機構,將該磨削機構與該保持機構相對地在垂直於該保持面的方向上磨削進給;片匣載台,載置可收納複數個晶圓的片匣;及搬送機構,在該片匣與該保持機構之間搬送晶圓,前述磨削裝置是以該磨削磨石對已收納於該片匣的晶圓進行磨削,並具備: 加工條件設定部,設定為了使用該磨削磨石來磨削晶圓而至少包含該磨削磨石的類型與該磨削進給機構的進給速度之加工條件; 消耗量資料,表示以所設定的該加工條件來磨削一片晶圓時的該磨削磨石的消耗量; 晶圓片數設定部,設定已收納於該片匣之晶圓的片數; 累積消耗量計算部,參照該消耗量資料,並藉由公式來計算將已收納於該片匣之晶圓全部磨削時的該磨削磨石的累積消耗量,其中前述公式是:每一片晶圓的該磨削磨石的消耗量×已設定於該晶圓片數設定部之晶圓的片數; 剩餘量辨識部,辨識該磨削磨石的剩餘量;及 判斷通知部,在加工開始前,若從藉由該剩餘量辨識部所辨識出的該磨削磨石的剩餘量扣除掉藉由該累積消耗量計算部所計算出的該累積消耗量後的值已成為磨石剩餘量容許值以下時,即判斷為該磨削磨石會在完成該片匣內的全部的晶圓的磨削前耗盡,並進行通知。 發明效果The present invention for solving the above-mentioned problem is a grinding device, which comprises: a holding mechanism for holding a wafer by a holding surface; a grinding mechanism for installing a grinding grindstone and grinding the wafer held by the holding mechanism; a grinding feed mechanism for grinding and feeding the grinding mechanism and the holding mechanism relative to each other in a direction perpendicular to the holding surface; a cassette carrier for carrying a cassette that can accommodate a plurality of wafers; and a conveying mechanism for conveying wafers between the cassette and the holding mechanism, wherein the aforementioned grinding device grinds the wafers accommodated in the cassette with the grinding grindstone, and comprises: a processing condition setting unit for setting processing conditions including at least the type of the grinding grindstone and the feed speed of the grinding feed mechanism in order to grind the wafer with the grinding grindstone; a consumption data indicating the consumption of the grinding grindstone when grinding a wafer with the set processing conditions. The consumption of the grinding stone; The wafer number setting unit sets the number of wafers stored in the wafer cassette; The cumulative consumption calculation unit refers to the consumption data and uses a formula to calculate the cumulative consumption of the grinding stone when all the wafers stored in the wafer cassette are ground, wherein the above formula is: the consumption of the grinding stone for each wafer × the number of wafers set in the wafer number setting unit; The remaining amount An identification unit that identifies the remaining amount of the grinding stone; and a judgment notification unit that, before the start of processing, if the value obtained by deducting the accumulated consumption calculated by the accumulated consumption calculation unit from the remaining amount of the grinding stone identified by the remaining amount identification unit is below the allowable value of the remaining amount of the grinding stone, it is determined that the grinding stone will be consumed before the grinding of all the wafers in the wafer cassette is completed, and a notification is made. Effect of the invention

以往有時會在磨削加工中進行磨削磨石的更換之通知,而出現了以下情形:無法將已收納於片匣內的複數個晶圓以相同的磨削磨石及大致相同的加工室內溫度來磨削加工。據此,已產生有以下情況:複數片晶圓的磨削後之厚度不均一。 但是,本發明之磨削裝置由於具備:加工條件設定部,設定為了使用磨削磨石來磨削晶圓而至少包含磨削磨石的類型與磨削進給機構的進給速度之加工條件;消耗量資料,表示以所設定之加工條件來磨削一片晶圓時的磨削磨石的消耗量;晶圓片數設定部,設定已收納於片匣之晶圓的片數;累積消耗量計算部,參照消耗量資料,並藉由公式來計算將已收納於片匣之晶圓全部磨削時的磨削磨石的累積消耗量,其中前述公式是:每一片晶圓的磨削磨石的消耗量×已設定於晶圓片數設定部之晶圓的片數;剩餘量辨識部,辨識磨削磨石的剩餘量;及判斷通知部,在加工開始前,若從藉由剩餘量辨識部所辨識出的磨削磨石的剩餘量扣除掉藉由累積消耗量計算部所計算出的累積消耗量後的值已成為磨石剩餘量容許值以下時,即判斷為磨削磨石會在完成片匣內的全部的晶圓的磨削前耗盡,並進行通知,藉此,可在開始磨削加工之前向作業人員通知將會有必須在完成已收納於片匣的全部的晶圓的磨削加工前更換磨削磨石之情形,因此在出現有通知的情況下,作業人員可以在磨削加工前更換磨削磨石,並於之後開始進行磨削加工,所以可以將所加工之複數個晶圓的包含厚度等之加工結果形成得較均一。In the past, there were times when a notice to replace the grinding stone was issued during grinding, but the following situation occurred: multiple wafers stored in the cassette could not be ground with the same grinding stone and at roughly the same processing room temperature. As a result, the following situation occurred: the thickness of multiple wafers after grinding was uneven. However, the grinding device of the present invention comprises: a processing condition setting unit for setting processing conditions including at least the type of grinding stone and the feed speed of the grinding feed mechanism for grinding wafers using a grinding stone; consumption data indicating the consumption of the grinding stone when grinding one wafer with the set processing conditions; a wafer number setting unit for setting the number of wafers stored in the wafer cassette; a cumulative consumption calculation unit for referring to the consumption data and calculating the cumulative consumption of the grinding stone when all the wafers stored in the wafer cassette are ground by a formula, wherein the formula is: the consumption of the grinding stone for each wafer × the number of wafers set in the wafer number setting unit; a remaining amount identification unit for identifying the remaining amount of the grinding stone; and a judgment unit for determining whether the wafers stored in the wafer cassette are fully consumed. The notification unit determines that the grinding stone will be used up before the grinding of all the wafers in the cassette is completed, and makes a notification before the start of the processing. If the value obtained by deducting the accumulated consumption calculated by the accumulated consumption calculation unit from the accumulated consumption of the grinding stone identified by the accumulated consumption identification unit becomes below the allowable value of the accumulated consumption of the grinding stone before the processing starts, the notification unit makes a notification. Thus, before the start of the grinding processing, the operator can be notified that the grinding stone must be replaced before the grinding of all the wafers accommodated in the cassette is completed. Therefore, when the notification is given, the operator can replace the grinding stone before the grinding processing and start the grinding processing thereafter, so that the processing results including thickness of the multiple wafers being processed can be made more uniform.

用以實施發明之形態The form used to implement the invention

圖1所示之磨削裝置1是藉由磨削機構4來磨削已保持於保持機構30之晶圓W的裝置。磨削裝置1的基座10上的前方(-Y方向側)是成為對保持機構30進行晶圓W的搬入搬出之區域即搬入搬出區域A,基座10上的後方(+Y方向側)是成為藉由磨削機構4來進行已保持於保持機構30上之晶圓W的磨削加工之區域即加工區域B。 再者,本發明之磨削裝置亦可形成為以下構成:具備粗磨削機構與精磨削機構之雙軸來作為磨削機構,並以旋轉的轉台將保持有晶圓W的保持機構30定位到各磨削機構的下方。The grinding device 1 shown in FIG. 1 is a device for grinding a wafer W held by a holding mechanism 30 by a grinding mechanism 4. The front (-Y direction side) on the base 10 of the grinding device 1 is an area for carrying in and out the wafer W from the holding mechanism 30, namely, a carrying-in and carrying-out area A, and the rear (+Y direction side) on the base 10 is an area for grinding the wafer W held by the holding mechanism 30 by the grinding mechanism 4, namely, a processing area B. Furthermore, the grinding device of the present invention can also be formed as follows: a double axis having a rough grinding mechanism and a fine grinding mechanism as a grinding mechanism, and a rotating turntable is used to position the holding mechanism 30 holding the wafer W below each grinding mechanism.

圖1所示之晶圓W在本實施形態中,是由矽母材等所構成之圓形的半導體晶圓,且在圖1中朝向下方的晶圓W的正面Wa形成有複數個器件,並被未圖示之保護膠帶貼附而受到保護。朝向上側之晶圓W的背面Wb是成為施行磨削加工的被加工面。再者,晶圓W除了矽以外,亦可藉砷化鎵、藍寶石、氮化鎵、樹脂、陶瓷或碳化矽等來構成。The wafer W shown in FIG. 1 is a circular semiconductor wafer made of silicon mother material in this embodiment, and a plurality of devices are formed on the front surface Wa of the wafer W facing downward in FIG. 1 and is protected by a protective tape not shown. The back surface Wb of the wafer W facing upward is the processed surface for grinding. In addition, the wafer W can also be made of gallium arsenide, sapphire, gallium nitride, resin, ceramic or silicon carbide, etc., in addition to silicon.

於基座10的正面側(-Y方向側)設置有第1片匣載台150及第2片匣載台151,可在第1片匣載台150載置以層架形式收納複數個加工前的晶圓W之第1片匣150a,且可在第2片匣載台151載置以層架形式收納複數個加工後的晶圓W之第2片匣151a。A first cassette carrier 150 and a second cassette carrier 151 are disposed on the front side (-Y direction side) of the base 10. The first cassette carrier 150a for storing a plurality of wafers W before processing in a shelf form can be placed on the first cassette carrier 150, and the second cassette carrier 151a for storing a plurality of wafers W after processing in a shelf form can be placed on the second cassette carrier 151.

在第1片匣150a的+Y方向側的開口的後方,配設有可從第1片匣150a搬出加工前的晶圓W並且將加工後的晶圓W搬入第2片匣151a的機器人155。在相鄰於機器人155的位置,設置有暫置區域152,在暫置區域152配設有對位機構153。對位機構153是將從第1片匣150a搬出而載置於暫置區域152的晶圓W,以進行縮小直徑的對位銷來對位到預定的位置(對中(centering))。Behind the opening on the +Y direction side of the first cassette 150a, a robot 155 is provided that can carry out the wafer W before processing from the first cassette 150a and carry the wafer W after processing into the second cassette 151a. A temporary area 152 is provided adjacent to the robot 155, and a positioning mechanism 153 is provided in the temporary area 152. The positioning mechanism 153 is to align the wafer W carried out from the first cassette 150a and placed in the temporary area 152 to a predetermined position (centering) by using a reduced diameter positioning pin.

在與對位機構153相鄰的位置上,配置有以保持有晶圓W的狀態來旋繞的裝載臂154a。裝載臂154a是將已在對位機構153中進行對位的晶圓W保持,並往配設於加工區域B內的保持機構30搬送。於裝載臂154a的旁邊設置有以保持有加工後的晶圓W的狀態來旋繞的卸載臂154b。在與卸載臂154b相接近的位置上,配置有對被卸載臂154b所搬送之加工後的晶圓W進行洗淨的單片式的洗淨機構156。已被洗淨機構156洗淨、乾燥的晶圓W是被機器人155搬入到第2片匣151a。A loading arm 154a is disposed adjacent to the alignment mechanism 153 and rotates while holding the wafer W. The loading arm 154a holds the wafer W aligned in the alignment mechanism 153 and transfers it to the holding mechanism 30 disposed in the processing area B. An unloading arm 154b is disposed next to the loading arm 154a and rotates while holding the processed wafer W. A single-piece cleaning mechanism 156 is disposed adjacent to the unloading arm 154b and cleans the processed wafer W transferred by the unloading arm 154b. The wafer W cleaned and dried by the cleaning mechanism 156 is transferred to the second wafer cassette 151a by the robot 155.

在本實施形態中,是藉由上述機器人155、裝載臂154a及卸載臂154b來構成在第1片匣150a及第2片匣151a與保持機構30之間搬送晶圓W的搬送機構。In the present embodiment, the robot 155 , the loading arm 154 a , and the unloading arm 154 b constitute a transfer mechanism for transferring the wafer W between the first cassette 150 a and the second cassette 151 a and the holding mechanism 30 .

配設於磨削裝置1的基座10上且保持晶圓W的保持機構30是例如其外形在平面視角下為圓形狀且具備有保持面30a,前述保持面30a連通於未圖示之吸引源且由多孔構件等所構成並可吸引保持晶圓W。又,保持機構30是被罩蓋39從周圍包圍,且藉由未圖示的Y軸方向進給機構而變得可在基座10上於Y軸方向上往返移動,前述Y軸方向進給機構是配設在罩蓋39及連結於罩蓋39的蛇腹蓋39a之下。又,保持機構30以Z軸方向的旋轉軸為中心而形成為可旋轉。The holding mechanism 30 disposed on the base 10 of the grinding device 1 and holding the wafer W is, for example, circular in plan view and has a holding surface 30a, which is connected to a suction source (not shown) and is composed of a porous member or the like and can suck and hold the wafer W. The holding mechanism 30 is surrounded by a cover 39 and can reciprocate in the Y-axis direction on the base 10 by a Y-axis direction feed mechanism (not shown). The Y-axis direction feed mechanism is disposed under the cover 39 and a bellows cover 39a connected to the cover 39. The holding mechanism 30 is rotatable around a rotation axis in the Z-axis direction.

在加工區域B的後方(+Y方向側)豎立設置有支柱12,在支柱12的-Y方向側的前表面配設有磨削進給機構2,前述磨削進給機構2是將磨削機構4與保持機構30相對地在垂直於保持面30a的Z軸方向(鉛直方向)上磨削進給。磨削進給機構2具備有具有Z軸方向之軸心的滾珠螺桿20、與滾珠螺桿20平行地配設的一對導軌21、連結於滾珠螺桿20的上端且使滾珠螺桿20旋動的馬達22、內部的螺帽螺合於滾珠螺桿20且側部滑接於導軌21的升降板23、及連結於升降板23且保持磨削機構4的保持器24,當馬達22使滾珠螺桿20旋動時,會伴隨於此而使升降板23被導軌21所導引並於Z軸方向上往返移動,而將保持於保持器24上的磨削機構4朝Z軸方向磨削進給。A support column 12 is vertically arranged at the rear (+Y direction side) of the processing area B, and a grinding feed mechanism 2 is arranged on the front surface of the support column 12 on the -Y direction side. The grinding feed mechanism 2 grinds and feeds the grinding mechanism 4 and the holding mechanism 30 relative to each other in the Z-axis direction (lead vertical direction) perpendicular to the holding surface 30a. The grinding feed mechanism 2 includes a ball screw 20 having an axis in the Z-axis direction, a pair of guide rails 21 arranged parallel to the ball screw 20, a motor 22 connected to the upper end of the ball screw 20 and causing the ball screw 20 to rotate, a lifting plate 23 whose inner nut is screwed to the ball screw 20 and whose side is slidably connected to the guide rails 21, and a retainer 24 connected to the lifting plate 23 and retaining the grinding mechanism 4. When the motor 22 causes the ball screw 20 to rotate, the lifting plate 23 is guided by the guide rails 21 and moves back and forth in the Z-axis direction, thereby grinding and feeding the grinding mechanism 4 retained on the retainer 24 in the Z-axis direction.

對保持在保持機構30上的晶圓W進行磨削加工的磨削機構4具備軸方向為Z軸方向的旋轉軸40、將旋轉軸40支撐成可旋轉的殼體41、旋轉驅動旋轉軸40的馬達42、連接於旋轉軸40的下端的圓環狀的安裝座43、及可裝卸地裝設於安裝座43的下表面的磨削輪44。The grinding mechanism 4 for grinding the wafer W held on the holding mechanism 30 has a rotating shaft 40 whose axial direction is the Z-axis direction, a housing 41 that supports the rotating shaft 40 so that it can rotate, a motor 42 that rotationally drives the rotating shaft 40, an annular mounting seat 43 connected to the lower end of the rotating shaft 40, and a grinding wheel 44 that is detachably mounted on the lower surface of the mounting seat 43.

磨削輪44具備輪基台441、及以環狀的方式配設於輪基台441的底面之大致長方體形狀的複數個磨削磨石440。磨削磨石440是例如以預定的黏合劑等來將磨削磨粒固接並成形。The grinding wheel 44 includes a wheel base 441 and a plurality of substantially rectangular parallelepiped grinding stones 440 disposed in a ring shape on the bottom surface of the wheel base 441. The grinding stones 440 are formed by fixing grinding abrasive grains with a predetermined adhesive or the like.

於旋轉軸40的內部於旋轉軸40的軸方向(Z軸方向)上貫通而形成有成為磨削水的通道之未圖示的流路。此流路是通過安裝座43,並在輪基台441的底面以可以朝向磨削磨石440噴出磨削水的方式開口。A flow path (not shown) for passing grinding water is formed inside the rotating shaft 40 in the axial direction (Z-axis direction) of the rotating shaft 40. This flow path passes through the mounting seat 43 and opens at the bottom surface of the wheel base 441 in a manner that the grinding water can be sprayed toward the grinding grindstone 440.

在成為已下降至磨削晶圓W時的高度位置之磨削輪44的附近的位置上配設有厚度測定機構38,前述厚度測定機構38是例如在磨削中以接觸式方式來測定晶圓W的厚度。 厚度測定機構38具備有例如一對厚度測定器(高度規)、亦即保持機構30的保持面30a之高度位置測定用的第1厚度測定器381、及被保持機構30所保持之晶圓W的被磨削面即背面Wb之高度位置測定用的第2厚度測定器382。A thickness measuring mechanism 38 is provided near the grinding wheel 44 which has descended to the height position when grinding the wafer W. The thickness measuring mechanism 38 measures the thickness of the wafer W by contact, for example, during grinding. The thickness measuring mechanism 38 includes, for example, a pair of thickness measuring devices (height gauges), a first thickness measuring device 381 for measuring the height position of the holding surface 30a of the holding mechanism 30, and a second thickness measuring device 382 for measuring the height position of the back surface Wb, which is the ground surface, of the wafer W held by the holding mechanism 30.

第1厚度測定器381及第2厚度測定器382在其各前端具有朝上下方向升降而接觸於各測定面的接觸件。第1厚度測定器381(第2厚度測定器382)是以可上下移動的方式被支撐,並且形成為可對各測定面以適當之力來按壓。厚度測定機構38是藉由第1厚度測定器381來檢測成為基準面之保持面30a的高度位置,並藉由第2厚度測定器382來檢測成為被磨削之晶圓W的上表面之背面Wb的高度位置,且計算兩者的檢測值之差,而可以藉此在磨削中依序測定晶圓W的厚度。 再者,厚度測定機構38亦可為非接觸式的厚度測定機構。The first thickness gauge 381 and the second thickness gauge 382 have contacts at their respective front ends that are lifted and lowered in the up-and-down direction and contact the respective measuring surfaces. The first thickness gauge 381 (the second thickness gauge 382) is supported in a manner that allows it to move up and down, and is formed so that it can press the respective measuring surfaces with an appropriate force. The thickness measuring mechanism 38 detects the height position of the holding surface 30a, which is the reference surface, by the first thickness gauge 381, and detects the height position of the back surface Wb, which is the upper surface of the ground wafer W, by the second thickness gauge 382, and calculates the difference between the detection values of the two, thereby sequentially measuring the thickness of the wafer W during grinding. Furthermore, the thickness measuring mechanism 38 can also be a non-contact thickness measuring mechanism.

磨削裝置1具備有進行裝置整體的控制之控制機構9,控制機構9是由依照控制程式進行運算處理之CPU及記憶體等之記憶媒體等所構成,並透過未圖示之有線或無線的通訊路徑而電連接於使保持機構30在Y軸方向上移動之未圖示的Y軸方向進給機構、以及磨削機構4等,且可在控制機構9的控制之下,進行吸引保持有晶圓W之保持機構30的Y軸方向上之移動控制或對磨削機構4之定位控制、以及磨削機構4中的磨削輪44的旋轉動作之控制等。The grinding device 1 has a control mechanism 9 for controlling the entire device. The control mechanism 9 is composed of a CPU and a storage medium such as a memory that perform calculations according to a control program, and is electrically connected to an unillustrated Y-axis feed mechanism that moves the holding mechanism 30 in the Y-axis direction, and a grinding mechanism 4, etc. through an unillustrated wired or wireless communication path. Under the control of the control mechanism 9, the Y-axis movement control of the holding mechanism 30 that attracts and holds the wafer W, the positioning control of the grinding mechanism 4, and the rotational movement of the grinding wheel 44 in the grinding mechanism 4 can be controlled.

例如,可將控制機構9電連接於使磨削機構4上下移動之磨削進給機構2的馬達22。 例如,在馬達22為伺服馬達的情況下,伺服馬達的旋轉編碼器是連接到亦具有作為伺服放大器之功能的控制機構9,且可在從控制機構9的輸出介面對伺服馬達供給動作訊號後,將伺服馬達的旋轉數作為編碼訊號來對控制機構9的輸入介面輸出。並且,已接收到編碼訊號的控制機構9可以依據伺服馬達的旋轉角度來依序辨識磨削機構4的移動量,並藉此依序辨識磨削機構4的高度位置。For example, the control mechanism 9 can be electrically connected to the motor 22 of the grinding feed mechanism 2 that moves the grinding mechanism 4 up and down. For example, when the motor 22 is a servo motor, the rotary encoder of the servo motor is connected to the control mechanism 9 that also functions as a servo amplifier, and after supplying an action signal to the servo motor from the output interface of the control mechanism 9, the number of rotations of the servo motor can be output as a coded signal to the input interface of the control mechanism 9. In addition, the control mechanism 9 that has received the coded signal can sequentially identify the movement amount of the grinding mechanism 4 according to the rotation angle of the servo motor, and thereby sequentially identify the height position of the grinding mechanism 4.

例如,磨削裝置1具備有觸控面板16(或附屬裝置之鍵盤等)來作為用於讓作業人員對磨削裝置1輸入加工條件等的輸入機構。例如,觸控面板16是電連接於控制機構9,且檢測作業人員以手指觸碰的位置,並將表示檢測結果的訊號發送至控制機構9。在觸控面板16上,可顯現輸入畫面及顯示畫面,可以藉由輸入畫面讓作業人員將加工條件的各種資訊等輸入並設定於磨削裝置1,且可以藉由顯示畫面來顯示加工條件的各種資訊等、晶圓W之經磨削的背面Wb的狀態、及裝置的各部的狀態等。For example, the grinding device 1 has a touch panel 16 (or a keyboard of an accessory device, etc.) as an input mechanism for allowing an operator to input processing conditions, etc. to the grinding device 1. For example, the touch panel 16 is electrically connected to the control mechanism 9, and detects the position touched by the operator's finger, and sends a signal indicating the detection result to the control mechanism 9. On the touch panel 16, an input screen and a display screen can be displayed, and the operator can input various information of processing conditions, etc. and set them in the grinding device 1 through the input screen, and various information of processing conditions, etc., the state of the ground back surface Wb of the wafer W, and the state of each part of the device can be displayed through the display screen.

磨削裝置1具備有:加工條件設定部91,設定為了使用磨削磨石440來磨削晶圓W而至少包含磨削磨石440的類型與磨削進給機構2的進給速度之加工條件;消耗量資料93,表示以所設定之加工條件來磨削一片晶圓W時的磨削磨石440的消耗量;晶圓片數設定部95,設定已收納於第1片匣150a之加工前的晶圓W的片數;及累積消耗量計算部96,參照消耗量資料93,並藉由公式來計算將已收納於第1片匣150a之晶圓W全部磨削時的磨削磨石440的累積消耗量,其中前述公式是:[每一片晶圓W的磨削磨石440的消耗量]×[已設定於晶圓片數設定部95之晶圓W的片數]。 再者,亦可除了作業人員將如上述地收納於第1片匣150a之加工前的晶圓W的片數設定輸入到晶圓片數設定部95以外,還具備偵測已收納於第1片匣150a之晶圓W的感測器,並藉由以感測器進行晶圓W的偵測來檢測已收納於第1片匣150a之晶圓W的片數,且進一步將其設定到晶圓片數設定部95。The grinding device 1 comprises: a processing condition setting unit 91 for setting processing conditions including at least the type of the grinding stone 440 and the feed speed of the grinding feed mechanism 2 for grinding the wafer W using the grinding stone 440; consumption data 93 for indicating the consumption of the grinding stone 440 when grinding one wafer W under the set processing conditions; a wafer number setting unit 95 for setting the number of wafers W before processing stored in the first wafer cassette 150a; and a cumulative consumption calculation unit 96 for referring to the consumption data 93 and calculating the cumulative consumption of the grinding stone 440 when all the wafers W stored in the first wafer cassette 150a are ground by a formula, wherein the aforementioned formula is: [consumption of the grinding stone 440 for each wafer W] × [the number of wafers W set in the wafer number setting unit 95]. Furthermore, in addition to the operator inputting the number of wafers W before processing stored in the first wafer box 150a as described above into the wafer number setting unit 95, a sensor for detecting the wafers W stored in the first wafer box 150a is also provided, and the number of wafers W stored in the first wafer box 150a is detected by detecting the wafers W with the sensor, and further set it in the wafer number setting unit 95.

在本實施形態中,加工條件設定部91是設定在控制機構9的記憶媒體的一個區域,且當例如讓作業人員至少將由磨削磨石440的磨粒(例如鑽石磨粒等)及黏合劑(例如樹脂、金屬、或陶瓷(vitrified)等)之組合等所決定的類型、與由磨削進給機構2所進行之磨削機構4的磨削進給速度作為加工條件的一部分來輸入到未圖示之觸控面板16時,即可將該加工條件設定(記憶)於加工條件設定部91。再者,亦可更包含有磨削輪44的旋轉速度、保持有晶圓W之保持機構30的旋轉速度、晶圓W的種類、晶圓W的成品厚度等,來作為設定於加工條件設定部91之加工條件的一部分。In the present embodiment, the processing condition setting section 91 is provided in an area of the memory medium of the control mechanism 9, and when, for example, the operator inputs at least the type determined by the combination of the abrasive grains (e.g., diamond abrasive grains, etc.) of the grinding stone 440 and the adhesive (e.g., resin, metal, or ceramic (vitrified), etc.), and the grinding feed speed of the grinding mechanism 4 performed by the grinding feed mechanism 2 as a part of the processing conditions into the unillustrated touch panel 16, the processing conditions can be set (stored) in the processing condition setting section 91. Furthermore, the rotation speed of the grinding wheel 44, the rotation speed of the holding mechanism 30 holding the wafer W, the type of the wafer W, the finished thickness of the wafer W, etc. can also be included as a part of the processing conditions set in the processing condition setting section 91.

在本實施形態中,消耗量資料93是記憶於控制機構9的記憶媒體的一個區域之資料。消耗量資料93是例如在過去之實驗所得到之資料。 以下,說明可得到消耗量資料93之情況的一例。In this embodiment, consumption data 93 is data stored in an area of a storage medium of the control mechanism 9. Consumption data 93 is data obtained, for example, in past experiments. The following describes an example of a situation in which consumption data 93 can be obtained.

在設定於磨削裝置1之加工條件設定部91的加工條件中,磨削磨石440之類型是類型1,由磨削進給機構2所進行之磨削機構4的磨削進給速度是設為磨削進給速度V1。又,例如,磨削裝置1中的磨削加工第一片晶圓W之磨削前的厚度為300μm,晶圓W之成品厚度是設為100μm。In the processing conditions set in the processing condition setting section 91 of the grinding device 1, the type of the grinding stone 440 is type 1, and the grinding feed speed of the grinding mechanism 4 performed by the grinding feed mechanism 2 is set to the grinding feed speed V1. For example, the thickness of the first wafer W to be ground in the grinding device 1 before grinding is 300 μm, and the finished thickness of the wafer W is set to 100 μm.

如圖2所示,將保持有晶圓W之保持機構30移動到磨削機構4之下,並將保持機構30定位成使磨削機構4的磨削輪44的旋轉中心相對於晶圓W的旋轉中心在水平方向上偏離相當於預定距離,而使磨削輪44的旋轉軌跡通過晶圓W的旋轉中心。As shown in FIG. 2 , the holding mechanism 30 holding the wafer W is moved under the grinding mechanism 4, and the holding mechanism 30 is positioned so that the rotation center of the grinding wheel 44 of the grinding mechanism 4 is horizontally offset from the rotation center of the wafer W by a predetermined distance, and the rotation trajectory of the grinding wheel 44 passes through the rotation center of the wafer W.

之後,在圖1所示之控制機構9所進行的控制下,藉由驅動磨削進給機構2的馬達22,來使磨削機構4從圖2所示之事先所掌握的預定的原點高度位置以預定速度逐漸下降。又,已開始下降之磨削機構4的高度位置,可藉由控制機構9來隨時掌握。磨削加工中,以厚度測定機構38來即時地依序測定晶圓W的厚度。將該測定結果傳送至圖1所示之控制機構9,並將由馬達22所形成之磨削機構4的磨削進給量控制成接近於目標的成品厚度,而將第一片晶圓W磨削至成品厚度(100μm)。Afterwards, under the control of the control mechanism 9 shown in FIG. 1 , the motor 22 of the grinding feed mechanism 2 is driven to gradually lower the grinding mechanism 4 from the predetermined origin height position known in advance as shown in FIG. 2 at a predetermined speed. Moreover, the height position of the grinding mechanism 4 that has begun to descend can be controlled at any time by the control mechanism 9. During the grinding process, the thickness of the wafer W is measured in real time and in sequence by the thickness measuring mechanism 38. The measurement result is transmitted to the control mechanism 9 shown in FIG. 1 , and the grinding feed amount of the grinding mechanism 4 formed by the motor 22 is controlled to be close to the target finished product thickness, and the first wafer W is ground to the finished product thickness (100 μm).

關於磨削磨石440的消耗量,是控制機構9從磨削前之晶圓W的厚度與磨削後之晶圓W的厚度之差來辨識晶圓W所被磨削的磨削量,且可以進一步使控制機構9辨識自磨削磨石440接觸於晶圓W的背面Wb時之高度位置Z0起的磨削機構4的磨削進給量(下降量)(亦即磨削前的磨削機構4的高度位置Z0與磨削結束時的磨削機構4的高度位置Z1之差),來計算為:[磨削機構4的磨削進給量]-[以厚度測定機構38所測定出的晶圓W所被磨削的磨削量]=[磨削磨石440的消耗量]。 例如,已將第一片晶圓W磨削至成品厚度的情況之磨削磨石440的最初的消耗量是設為消耗量L1。本消耗量L1基於對第一片晶圓W施行磨削加工並非穩定的情況、或產生設置(set-up)誤差的情況較多等之理由,因而基本上並未能採用作為消耗量資料93。Regarding the consumption of the grinding stone 440, the control mechanism 9 identifies the grinding amount of the wafer W from the difference between the thickness of the wafer W before grinding and the thickness of the wafer W after grinding, and can further make the control mechanism 9 identify the grinding feed amount (descent amount) of the grinding mechanism 4 from the height position Z0 when the grinding stone 440 contacts the back side Wb of the wafer W (that is, the difference between the height position Z0 of the grinding mechanism 4 before grinding and the height position Z1 of the grinding mechanism 4 at the end of grinding), and calculate it as: [grinding feed amount of the grinding mechanism 4]-[grinding amount of the wafer W measured by the thickness measuring mechanism 38]=[consumption of the grinding stone 440]. For example, the initial consumption of the grinding stone 440 when the first wafer W has been ground to the finished product thickness is set to the consumption L1. The consumption L1 is basically not adopted as the consumption data 93 because the grinding process performed on the first wafer W is not stable or more set-up errors are generated.

接著,可藉由將圖3所示之對第二片晶圓W的磨削加工如上述所說明地同樣地實施,而將晶圓W磨削至成品厚度100μm,且辨識磨削結束時之磨削機構4的高度位置Z2,進而計算圖3所示之磨削磨石440的消耗量L2。因為對第二片晶圓W的磨削加工是穩定進行,且未產生設置誤差等,所以該消耗量L2會成為在所設定之加工條件(亦即至少磨削磨石440的類型為類型1,由磨削進給機構2所進行之磨削機構4的磨削進給速度為磨削進給速度V1之加工條件)下磨削了一片晶圓W時的磨削磨石440的消耗量(消耗量資料93)。再者,亦可進一步磨削複數片晶圓W,來計算每磨削一片之磨削磨石440的消耗量,並將該複數個消耗量的平均值認定為消耗量資料93。 又,亦可將第一片晶圓W磨削至成品厚度時之磨削機構4的高度位置、與將第二片晶圓W磨削至成品厚度時之磨削機構4的高度位置之差設為磨削了一片晶圓W時的磨削磨石440的消耗量(消耗量資料93)。Next, the grinding process of the second wafer W shown in FIG. 3 is performed in the same manner as described above, and the wafer W is ground to a finished product thickness of 100 μm, and the height position Z2 of the grinding mechanism 4 at the end of the grinding is identified, and the consumption L2 of the grinding stone 440 shown in FIG. 3 is calculated. Because the grinding process of the second wafer W is performed stably and no setting error or the like is generated, the consumption L2 becomes the consumption of the grinding stone 440 when one wafer W is ground under the set processing conditions (that is, at least the type of the grinding stone 440 is type 1, and the grinding feed speed of the grinding mechanism 4 performed by the grinding feed mechanism 2 is the grinding feed speed V1) (consumption data 93). Furthermore, a plurality of wafers W may be further ground to calculate the consumption of the grinding stone 440 for each wafer, and the average of the plurality of consumptions may be determined as the consumption data 93. In addition, the difference between the height position of the grinding mechanism 4 when the first wafer W is ground to the finished product thickness and the height position of the grinding mechanism 4 when the second wafer W is ground to the finished product thickness may be set as the consumption of the grinding stone 440 when one wafer W is ground (consumption data 93).

磨削裝置1除了如上述而得到的消耗量資料93以外,也可在控制機構9具備有按每個加工條件而不同之複數個消耗量資料。The grinding device 1 may include, in addition to the consumption data 93 obtained as described above, a plurality of consumption data different for each processing condition in the control mechanism 9 .

如圖1所示,磨削裝置1具備有辨識磨削磨石440之剩餘量的剩餘量辨識部92。剩餘量辨識部92是組入於例如控制機構9。又,剩餘量辨識部92是透過有線或無線的通訊路徑而電連接於圖1所示之磨石剩餘量檢測機構35。As shown in Fig. 1, the grinding device 1 has a remaining amount identification unit 92 for identifying the remaining amount of the grinding stone 440. The remaining amount identification unit 92 is incorporated in, for example, the control mechanism 9. The remaining amount identification unit 92 is electrically connected to the grinding stone remaining amount detection mechanism 35 shown in Fig. 1 through a wired or wireless communication path.

非接觸式的磨石剩餘量檢測機構35是配設於例如圍繞保持機構30的罩蓋39上,磨石剩餘量檢測機構35是藉由未圖示之Y軸方向進給機構而變得可和在Y軸方向上可往返移動的保持機構30及罩蓋39一起在Y軸方向上往返移動。再者,磨石剩餘量檢測機構35的配設位置只要是成為磨削機構4的下方之位置即可,並不限定於在罩蓋39上之構成,亦可形成為可移動。The non-contact type grinding stone remaining amount detection mechanism 35 is disposed on, for example, a cover 39 surrounding the holding mechanism 30, and the grinding stone remaining amount detection mechanism 35 is reciprocated in the Y-axis direction together with the holding mechanism 30 and the cover 39 that can reciprocate in the Y-axis direction by a Y-axis direction feed mechanism (not shown). The arrangement position of the grinding stone remaining amount detection mechanism 35 is not limited to being disposed on the cover 39 as long as it is located below the grinding mechanism 4, and may also be formed to be movable.

磨石剩餘量檢測機構35是例如反射型(擴散反射型或限定反射型等)的光電感測器,且是將投光部350與受光部351內置於1個感測放大器內。 再者,在保持機構30與磨石剩餘量檢測機構35之間,亦可設置有未圖示之遮蔽板,前述遮蔽板會防止磨削屑等從保持機構30側進入磨石剩餘量檢測機構35側之情形。The grinding stone remaining amount detection mechanism 35 is, for example, a reflective type (diffused reflective type or limited reflective type, etc.) photoelectric sensor, and the light projecting part 350 and the light receiving part 351 are built into one sensing amplifier. Furthermore, a shielding plate (not shown) may be provided between the holding mechanism 30 and the grinding stone remaining amount detection mechanism 35, and the shielding plate prevents grinding chips, etc. from entering the grinding stone remaining amount detection mechanism 35 from the holding mechanism 30 side.

以下,針對藉由磨削裝置1磨削晶圓W的情況下的磨削裝置1的各構成要素的動作進行說明。 首先,例如作業人員從顯示於觸控面板16的輸入畫面上的複數個加工條件,選擇對於接下來要加工的晶圓W的加工條件,並輸入到控制機構9。所選擇的加工條件是至少設為磨削磨石440的類型為類型1,由磨削進給機構2所進行之磨削機構4的磨削進給速度為磨削進給速度V1的加工條件。該已選擇的加工條件是設定在加工條件設定部91。The following describes the operation of each component of the grinding device 1 when the grinding device 1 grinds the wafer W. First, for example, the operator selects a processing condition for the wafer W to be processed next from a plurality of processing conditions displayed on the input screen of the touch panel 16, and inputs it to the control mechanism 9. The selected processing condition is at least a processing condition in which the type of the grinding stone 440 is set to type 1 and the grinding feed speed of the grinding mechanism 4 performed by the grinding feed mechanism 2 is the grinding feed speed V1. The selected processing condition is set in the processing condition setting unit 91.

又,作業人員從觸控面板16的輸入畫面,將已收納於第1片匣150a的磨削加工前的晶圓W的片數輸入到控制機構9。再者,該晶圓W的片數設定亦可設成磨削裝置1藉由感測器等自動地掌握已載置於第1片匣載台150之第1片匣150a內的晶圓W的片數之構成。該晶圓W的片數是設為例如25片。然後,可將晶圓W的片數25片設定到晶圓片數設定部95。Furthermore, the operator inputs the number of wafers W before grinding that have been stored in the first cassette 150a to the control mechanism 9 from the input screen of the touch panel 16. Furthermore, the number of wafers W can also be set so that the grinding device 1 automatically grasps the number of wafers W that have been loaded in the first cassette 150a of the first cassette carrier 150 by means of a sensor or the like. The number of wafers W is set to, for example, 25. Then, the number of wafers W, 25, can be set to the wafer number setting unit 95.

已組入控制機構9之累積消耗量計算部96,參照已記憶於控制機構9的記憶媒體的消耗量資料93,來計算[每一片晶圓W的磨削磨石440之消耗量]×[已設定於晶圓片數設定部95之晶圓W的片數]=[圖3所示之消耗量L2]×25=將已收納於第1片匣150a的25片晶圓W全部磨削時的磨削磨石440的累積消耗量L9。The accumulated consumption calculation unit 96 incorporated in the control mechanism 9 refers to the consumption data 93 stored in the storage medium of the control mechanism 9 to calculate [the consumption of the grinding stone 440 for each wafer W] × [the number of wafers W set in the wafer number setting unit 95] = [the consumption L2 shown in FIG. 3] × 25 = the accumulated consumption L9 of the grinding stone 440 when all 25 wafers W stored in the first wafer box 150a are ground.

又,可藉由磨石剩餘量檢測機構35及剩餘量辨識部92,來辨識裝設於磨削機構4之磨削磨石440的剩餘量。該剩餘量辨識可在例如磨削裝置1的加工開始前的暖機運轉時等進行。 在該剩餘量辨識中,首先是藉由未圖示之Y軸方向進給機構,來將例如和保持機構30一起移動的磨石剩餘量檢測機構35定位到位於圖4所示之任意的高度位置Z3之磨削機構4的磨削磨石440的下表面正下方。 然後,磨石剩餘量檢測機構35的投光部350朝向磨削磨石440的下表面照射測定光。然後,可以藉由以由CCD等所構成之受光部351接收在磨削磨石440的下表面反射之測定光,而依據光學上的三角測距之測定原理等來測定從磨石剩餘量檢測機構35到磨削磨石440的下表面之Z軸方向上的距離。該距離為例如距離La。可從磨石剩餘量檢測機構35對控制機構9傳送關於距離La之資訊,並記憶於控制機構9。Furthermore, the remaining amount of the grinding stone 440 mounted on the grinding mechanism 4 can be identified by the grinding stone remaining amount detection mechanism 35 and the remaining amount identification unit 92. This remaining amount identification can be performed, for example, during the warm-up operation before the grinding device 1 starts processing. In this remaining amount identification, first, the grinding stone remaining amount detection mechanism 35, which moves together with the holding mechanism 30, is positioned directly below the lower surface of the grinding stone 440 of the grinding mechanism 4 at an arbitrary height position Z3 shown in FIG. 4 by the Y-axis direction feeding mechanism (not shown). Then, the light projection unit 350 of the grinding stone remaining amount detection mechanism 35 irradiates the measurement light toward the lower surface of the grinding stone 440. Then, the distance in the Z-axis direction from the grinding stone remaining amount detection mechanism 35 to the lower surface of the grinding stone 440 can be measured based on the optical triangulation distance measurement principle by receiving the measurement light reflected on the lower surface of the grinding stone 440 with the light receiving unit 351 composed of CCD or the like. The distance is, for example, the distance La. The information on the distance La can be transmitted from the grinding stone remaining amount detection mechanism 35 to the control mechanism 9 and stored in the control mechanism 9.

接著,藉由未圖示之Y軸方向進給機構,將磨石剩餘量檢測機構35定位到磨削機構4的輪基台441的下表面正下方。再者,維持磨削機構4之高度位置Z3。 然後,磨石剩餘量檢測機構35的投光部350朝向輪基台441的下表面照射測定光。然後,可以藉由受光部351接收在輪基台441的下表面反射之測定光,來測定從磨石剩餘量檢測機構35到輪基台441的下表面之Z軸方向上的距離Lc。從磨石剩餘量檢測機構35對控制機構9傳送關於距離Lc之資訊,並記憶於控制機構9。Next, the grinding stone remaining amount detection mechanism 35 is positioned directly below the lower surface of the wheel base 441 of the grinding mechanism 4 by means of the Y-axis direction feed mechanism (not shown). Furthermore, the height position Z3 of the grinding mechanism 4 is maintained. Then, the light projection unit 350 of the grinding stone remaining amount detection mechanism 35 irradiates the measurement light toward the lower surface of the wheel base 441. Then, the distance Lc in the Z-axis direction from the grinding stone remaining amount detection mechanism 35 to the lower surface of the wheel base 441 can be measured by receiving the measurement light reflected on the lower surface of the wheel base 441 by the light receiving unit 351. Information about the distance Lc is transmitted from the grinding stone remaining amount detection mechanism 35 to the control mechanism 9 and stored in the control mechanism 9.

已組入控制機構9的剩餘量辨識部92,是將從距離Lc減去距離La後的值辨識為磨削磨石440的剩餘量。例如,成為[距離Lc]~[距離La]=磨削磨石440的剩餘量Ld。The remaining amount recognition unit 92 incorporated in the control mechanism 9 recognizes the value obtained by subtracting the distance La from the distance Lc as the remaining amount of the grinding stone 440. For example, [distance Lc] - [distance La] = remaining amount Ld of the grinding stone 440.

磨削磨石440之剩餘量的辨識並不限定於上述之實施形態。 例如,磨削裝置1亦可具備有圖6所示之接觸式的磨石剩餘量檢測機構36來取代磨石剩餘量檢測機構35。 磨石剩餘量檢測機構36具備有例如,供磨削磨石440的下表面或輪基台441的下表面接觸且可升降的被接觸升降部365、讓被接觸升降部365以可在Z軸方向上升降的方式容置的罩殼360、配設於罩殼360的內部底面且將被接觸升降部365支撐成可升降的彈簧等之彈性構件364、及檢測藉由磨削進給機構2而下降之磨削磨石440的下表面或輪基台441的下表面接觸於被接觸升降部365而被接觸升降部365開始下降時的透射型的光感測器。 例如,磨石剩餘量檢測機構36可以透過未圖示之無線或有線的通訊路徑來將各種檢測訊號發送至圖1所示之控制機構9。The identification of the remaining amount of the grinding stone 440 is not limited to the above-mentioned embodiment. For example, the grinding device 1 may also have a contact type grinding stone remaining amount detection mechanism 36 shown in FIG. 6 instead of the grinding stone remaining amount detection mechanism 35. The grinding stone remaining amount detection mechanism 36 includes, for example, a contacted lifting part 365 that contacts the lower surface of the grinding stone 440 or the lower surface of the wheel base 441 and can be raised and lowered, a housing 360 that accommodates the contacted lifting part 365 in a manner that allows it to be raised and lowered in the Z-axis direction, an elastic member 364 such as a spring disposed on the inner bottom surface of the housing 360 and supporting the contacted lifting part 365 so that it can be raised and lowered, and a transmission type photo sensor that detects when the lower surface of the grinding stone 440 or the lower surface of the wheel base 441 that is lowered by the grinding feed mechanism 2 contacts the contacted lifting part 365 and the contacted lifting part 365 starts to descend. For example, the grinding stone remaining amount detection mechanism 36 can send various detection signals to the control mechanism 9 shown in FIG. 1 through a wireless or wired communication path (not shown).

檢測因下降之磨削磨石440的下表面或輪基台441的下表面接觸而被接觸升降部365開始下降時的透射型的光感測器具備有配設於罩殼360的側壁的內側面且互相在Y軸方向上相向的投光部362及受光部363。藉由被接觸升降部365下降,投光部362所投射之測定光會被遮光,藉此受光部363會檢測到受光量的減少,而可檢測磨削磨石440的下表面或輪基台441的下表面已接觸於被接觸升降部365之情形。再者,磨石剩餘量檢測機構36並不限定於透射型的光感測器,亦可為靜電容量型的近接感測器,亦可為配設於被接觸升降部365的上表面而直接檢測已接觸磨削磨石440的下表面或輪基台441的下表面之壓力感測器等。The transmission type photo sensor for detecting that the lower surface of the lower grinding stone 440 or the lower surface of the wheel base 441 starts to descend by contacting the contacted lifting part 365 includes a light projecting part 362 and a light receiving part 363 disposed on the inner side surface of the side wall of the housing 360 and facing each other in the Y-axis direction. As the contacted lifting part 365 descends, the measurement light projected by the light projecting part 362 is shielded, and the light receiving part 363 detects a decrease in the amount of light received, thereby detecting that the lower surface of the grinding stone 440 or the lower surface of the wheel base 441 has contacted the contacted lifting part 365. Furthermore, the grinding stone remaining amount detection mechanism 36 is not limited to a transmission type photo sensor, but can also be an electrostatic capacitance type proximity sensor, or a pressure sensor disposed on the upper surface of the contacted lifting part 365 to directly detect the lower surface of the contacted grinding stone 440 or the lower surface of the wheel base 441.

藉由圖6所示之磨石剩餘量檢測機構36及剩餘量辨識部92,來說明辨識磨削磨石440的剩餘量之情況。 藉由未圖示之Y軸方向進給機構,可將例如和保持機構30一起移動之磨石剩餘量檢測機構36定位到磨削機構4的磨削磨石440的下表面正下方。 然後,在由控制機構9所進行的控制之下,磨削進給機構2會使已定位到事先所掌握的高度位置之磨削機構4以預定的速度逐漸下降。又,已開始下降之磨削機構4的高度位置,可藉由控制機構9來隨時掌握。The identification of the remaining amount of the grinding stone 440 is explained by the grinding stone remaining amount detection mechanism 36 and the remaining amount identification unit 92 shown in FIG6. The grinding stone remaining amount detection mechanism 36, which moves together with the holding mechanism 30, can be positioned directly below the lower surface of the grinding stone 440 of the grinding mechanism 4 by the Y-axis direction feed mechanism not shown. Then, under the control of the control mechanism 9, the grinding feed mechanism 2 gradually lowers the grinding mechanism 4, which has been positioned at a height position known in advance, at a predetermined speed. In addition, the height position of the grinding mechanism 4 that has begun to descend can be known at any time by the control mechanism 9.

例如,如圖6所示,藉由下降之磨削機構4的磨削磨石440的下表面接觸於被接觸升降部365的上表面而使被接觸升降部365開始下降,透射型的光感測器的受光部363會檢測到測定光的減少。從磨石剩餘量檢測機構36將檢測訊號發送至控制機構9,而在由控制機構9所進行的控制之下,停止由磨削進給機構2所進行之磨削機構4的往-Z方向的磨削進給。此外,控制機構9會記憶磨削磨石440的下表面接觸於被接觸升降部365的上表面之時間點中的磨削機構4的高度位置。該高度位置為例如圖6所示之高度位置Z4。For example, as shown in FIG6 , the lower surface of the grinding stone 440 of the descending grinding mechanism 4 contacts the upper surface of the contacted lifting part 365, causing the contacted lifting part 365 to start descending, and the light receiving part 363 of the transmission type photo sensor detects the reduction of the measurement light. The detection signal is sent from the grinding stone remaining amount detection mechanism 36 to the control mechanism 9, and under the control of the control mechanism 9, the grinding feed of the grinding mechanism 4 in the -Z direction by the grinding feed mechanism 2 is stopped. In addition, the control mechanism 9 memorizes the height position of the grinding mechanism 4 at the time point when the lower surface of the grinding stone 440 contacts the upper surface of the contacted lifting part 365. This height position is, for example, the height position Z4 shown in FIG6 .

接著,如圖7所示,藉由未圖示之Y軸方向進給機構,將磨石剩餘量檢測機構36定位到磨削機構4的輪基台441的下表面正下方。 然後,在由控制機構9所進行的控制之下,磨削進給機構2會使已定位到事先所掌握的高度位置之磨削機構4以預定的速度逐漸下降。Next, as shown in FIG7 , the grinding stone remaining amount detection mechanism 36 is positioned directly below the lower surface of the wheel base 441 of the grinding mechanism 4 by the Y-axis direction feed mechanism (not shown). Then, under the control of the control mechanism 9, the grinding feed mechanism 2 causes the grinding mechanism 4, which has been positioned at a predetermined height position, to gradually descend at a predetermined speed.

例如,如圖7所示,下降之磨削機構4的輪基台441的下表面接觸於被接觸升降部365的上表面,而使光感測器的受光部363檢測測定光的減少。從磨石剩餘量檢測機構36將檢測訊號發送到控制機構9,而在由控制機構9所進行的控制之下,停止磨削機構4的往-Z方向的磨削進給。此外,控制機構9會辨識輪基台441的下表面接觸於被接觸升降部365的上表面的時間點中的磨削機構4的高度位置Z5。For example, as shown in FIG7 , the lower surface of the wheel base 441 of the descending grinding mechanism 4 contacts the upper surface of the contacted lifting part 365, and the light receiving part 363 of the photo sensor detects the reduction of the measurement light. The detection signal is sent from the grinding stone remaining amount detection mechanism 36 to the control mechanism 9, and under the control of the control mechanism 9, the grinding feed of the grinding mechanism 4 in the -Z direction is stopped. In addition, the control mechanism 9 recognizes the height position Z5 of the grinding mechanism 4 at the time point when the lower surface of the wheel base 441 contacts the upper surface of the contacted lifting part 365.

已組入圖1所示之控制機構9的剩餘量辨識部92,是將從圖7所示的高度位置Z4減去高度位置Z5後的值辨識為磨削磨石440的剩餘量。例如,成為[高度位置Z4]-[高度位置Z5]=磨削磨石440的剩餘量Ld。The remaining amount recognition unit 92 incorporated in the control mechanism 9 shown in Fig. 1 recognizes the value obtained by subtracting the height position Z5 from the height position Z4 shown in Fig. 7 as the remaining amount Ld of the grinding stone 440. For example, [height position Z4] - [height position Z5] = the remaining amount Ld of the grinding stone 440.

磨削裝置1具備有圖1所示的判斷通知部99。判斷通知部99在本實施形態中是被組入控制機構9。 判斷通知部99會在加工開始前計算從藉由剩餘量辨識部92所辨識出的磨削磨石440的剩餘量Ld扣除掉如先前所說明地藉由累積消耗量計算部96所計算出的累積消耗量L9後的值L10。The grinding device 1 is provided with a judgment notification unit 99 shown in FIG1 . The judgment notification unit 99 is incorporated into the control mechanism 9 in the present embodiment. Before the start of machining, the judgment notification unit 99 calculates a value L10 obtained by deducting the accumulated consumption L9 calculated by the accumulated consumption calculation unit 96 as described above from the remaining amount Ld of the grinding stone 440 identified by the remaining amount identification unit 92 .

此外,判斷通知部99會判斷所計算出的值L10是否成為磨石剩餘量容許值(例如0μm)以下、或是超過磨石剩餘量容許值。 例如,值L10已成為0μm以下。在此情況下,是判斷為磨削磨石440會在第1片匣150a內的全部25片的晶圓W的磨削完成前耗盡,可在觸控面板16顯示該判斷、或由未圖示之揚聲器通報該判斷,而向作業人員通知該判斷。在此情況下,已辨識到該判斷之作業人員在開始晶圓W的磨削加工前,會將已裝設於磨削機構4的磨削磨石440的剩餘量為剩餘量Ld的磨削輪44,更換為新的磨削輪44。 再者,亦可設為:在將磨削磨石440的磨石剩餘量容許值預先設為例如數μm,並在加工開始前,從藉由剩餘量辨識部92所辨識出的磨削磨石440的剩餘量Ld扣除掉如先前所說明地藉由累積消耗量計算部96所計算出的累積消耗量L9後的值L10已成為磨石剩餘量容許值以下的情況下,判斷通知部99會向作業人員通知以下之通知:目前所裝設在磨削機構4之磨削輪44並不適用於將25片晶圓W全部磨削。In addition, the judgment notification unit 99 judges whether the calculated value L10 is below the allowable value of the remaining amount of the grinding stone (for example, 0 μm) or exceeds the allowable value of the remaining amount of the grinding stone. For example, the value L10 has become below 0 μm. In this case, it is judged that the grinding stone 440 will be used up before the grinding of all 25 wafers W in the first wafer cassette 150a is completed, and the judgment can be displayed on the touch panel 16 or announced by a speaker not shown in the figure, and the judgment can be notified to the operator. In this case, the operator who has recognized the judgment will replace the grinding wheel 44 with a remaining amount Ld of the grinding stone 440 installed in the grinding mechanism 4 with a new grinding wheel 44 before starting the grinding process of the wafer W. Furthermore, it can also be arranged that: when the allowable value of the remaining amount of the grinding stone 440 is preset to, for example, several μm, and before the start of processing, when the value L10 obtained by deducting the accumulated consumption L9 calculated by the accumulated consumption calculation unit 96 as previously described from the remaining amount Ld of the grinding stone 440 identified by the remaining amount identification unit 92 becomes below the allowable value of the remaining amount of the grinding stone, the judgment notification unit 99 will notify the operator of the following: the grinding wheel 44 currently installed in the grinding mechanism 4 is not suitable for grinding all 25 wafers W.

再者,在例如值L10超過磨石剩餘量容許值(例如0μm)的情況下,會判斷為類型1的磨削磨石440不會在圖1所示之第1片匣150a內的全部25片晶圓W的磨削完成之前耗盡,且在如本實施形態地在例如全自動的磨削裝置1中,會為了開始晶圓W的磨削加工,而藉由機器人155從第1片匣150a搬出一片晶圓W。 再者,磨石剩餘量容許值可設定包含0的整數。Furthermore, when, for example, the value L10 exceeds the allowable value of the remaining grinding stone (e.g., 0 μm), it is determined that the type 1 grinding stone 440 will not be used up before the grinding of all 25 wafers W in the first cassette 150a shown in FIG. 1 is completed, and in the present embodiment, for example, in the fully automatic grinding device 1, a wafer W is moved out of the first cassette 150a by the robot 155 in order to start the grinding process of the wafer W. Furthermore, the allowable value of the remaining grinding stone can be set to an integer including 0.

在例如將磨削輪44更換為新的磨削輪後,開始圖1所示的晶圓W的磨削的情況下,是讓保持機構30移動到裝載臂154a的附近。又,機器人155從第1片匣150a拉出一片晶圓W,並使晶圓W移動至暫置區域152。When the grinding wheel 44 is replaced with a new grinding wheel and the grinding of the wafer W shown in FIG. 1 is started, the holding mechanism 30 is moved to the vicinity of the loading arm 154 a. The robot 155 pulls out a wafer W from the first cassette 150 a and moves the wafer W to the temporary area 152 .

在暫置區域152上藉由對位機構153來對晶圓W進行對中(centering)後,裝載臂154a會將已進行對中的晶圓W搬送至保持機構30上。然後,作動未圖示之吸引源,讓保持機構30將晶圓W以背面Wb朝上方露出的狀態來吸引保持在保持面30a上。After the wafer W is centered by the alignment mechanism 153 on the temporary area 152, the loading arm 154a transfers the centered wafer W to the holding mechanism 30. Then, the suction source (not shown) is activated to allow the holding mechanism 30 to suck and hold the wafer W on the holding surface 30a with the back side Wb exposed upward.

接著,將保持有晶圓W之圖1所示的保持機構30往+Y方向移動至磨削機構4的下方。藉由磨削進給機構2將磨削機構4往-Z方向以磨削進給速度V1進給,且伴隨於旋轉軸40的旋轉而旋轉之磨削輪44的類型1的磨削磨石440抵接於晶圓W的背面Wb來進行磨削。在磨削中,由於伴隨於保持機構30的旋轉,已保持於保持面30a上的晶圓W也會旋轉,因此磨削輪44可進行晶圓W的背面Wb的整個面的磨削加工。又,可隨著對磨削磨石與晶圓W的接觸部位供給磨削水來將接觸部位冷卻,而將在接觸部位產生的磨削屑洗淨去除。Next, the holding mechanism 30 shown in FIG. 1 holding the wafer W is moved in the +Y direction to the bottom of the grinding mechanism 4. The grinding mechanism 4 is fed in the -Z direction at a grinding feed speed V1 by the grinding feed mechanism 2, and the grinding stone 440 of type 1 of the grinding wheel 44 that rotates along with the rotation of the rotating shaft 40 abuts against the back surface Wb of the wafer W for grinding. During grinding, since the wafer W held on the holding surface 30a also rotates along with the rotation of the holding mechanism 30, the grinding wheel 44 can grind the entire back surface Wb of the wafer W. In addition, by supplying grinding water to the contact portion between the grinding stone and the wafer W to cool the contact portion, the grinding chips generated at the contact portion can be cleaned and removed.

將晶圓W磨削至成為所期望的厚度(例如厚度100μm)後,藉由磨削進給機構2使磨削機構4上升而使其從晶圓W離開,並進一步使保持機構30朝-Y方向移動而定位到卸載臂154b的附近。接著,將已藉由卸載臂154b吸引保持背面Wb的晶圓W搬送至洗淨機構156。藉由洗淨機構156將晶圓W的背面Wb旋轉洗淨,並進一步乾燥後,藉由機器人155搬入第2片匣151a。After the wafer W is ground to a desired thickness (e.g., 100 μm), the grinding mechanism 4 is raised by the grinding feed mechanism 2 to separate it from the wafer W, and the holding mechanism 30 is further moved in the -Y direction to be positioned near the unloading arm 154b. Then, the wafer W whose back side Wb is held by the unloading arm 154b is transported to the cleaning mechanism 156. The back side Wb of the wafer W is rotated and cleaned by the cleaning mechanism 156, and after further drying, it is moved into the second wafer cassette 151a by the robot 155.

對於已收納在第1片匣150a的25片晶圓W,依序施行如上述之磨削加工,來完成對第1片匣150a內的全部的晶圓W的磨削加工。The 25 wafers W stored in the first cassette 150 a are subjected to the grinding process described above in sequence, and the grinding process of all the wafers W in the first cassette 150 a is completed.

如上述,本發明之磨削裝置1由於具備:加工條件設定部91,設定為了使用磨削磨石440來磨削晶圓W而至少包含磨削磨石440的類型與磨削進給機構2的進給速度之加工條件;消耗量資料93,表示以所設定之加工條件來磨削一片晶圓W時的磨削磨石440的消耗量;晶圓片數設定部95,設定已收納於第1片匣150a之晶圓W的片數;累積消耗量計算部96,參照消耗量資料93,並藉由公式來計算將已收納於第1片匣150a之晶圓W全部磨削時的磨削磨石440的累積消耗量,其中前述公式是:每一片晶圓W的磨削磨石440的消耗量×已設定於晶圓片數設定部95之晶圓W的片數;剩餘量辨識部92,辨識磨削磨石440的剩餘量;及判斷通知部99,在加工開始前,若從藉由剩餘量辨識部92所辨識出的磨削磨石440的剩餘量扣除掉藉由累積消耗量計算部96所計算出的累積消耗量後的值已成為磨石剩餘量容許值以下時,即判斷為磨削磨石440會在完成第1片匣150a內的全部的晶圓W的磨削前耗盡,並進行通知,藉此,可在開始磨削加工之前向作業人員通知將會有必須在完成已收納於第1片匣150a的全部的晶圓W的磨削加工前更換磨削磨石440之情形,因此在出現有通知的情況下,作業人員可以在磨削加工前將磨削磨石440更換成可磨削第1片匣150a內的全部的晶圓W的新的磨削磨石440,並於之後實施磨削加工,所以可以將所加工之複數個晶圓W的包含厚度等之加工結果形成得較均一。As described above, the grinding device 1 of the present invention comprises: a processing condition setting unit 91 for setting processing conditions including at least the type of the grinding stone 440 and the feed speed of the grinding feed mechanism 2 for grinding the wafer W using the grinding stone 440; a consumption data 93 for indicating the consumption of the grinding stone 440 when grinding one wafer W under the set processing conditions; a wafer number setting unit 95 for setting the number of wafers stored in the first wafer cassette 150a; W; a cumulative consumption calculation unit 96, referring to the consumption data 93, and using a formula to calculate the cumulative consumption of the grinding stone 440 when all the wafers W stored in the first wafer cassette 150a are ground, wherein the formula is: the consumption of the grinding stone 440 for each wafer W × the number of wafers W set in the wafer number setting unit 95; a remaining quantity identification unit 92, identifying the remaining quantity of the grinding stone 440; and a judgment notification unit 99 Before the processing starts, if the value obtained by deducting the accumulated consumption calculated by the accumulated consumption calculation unit 96 from the remaining amount of the grinding stone 440 identified by the remaining amount identification unit 92 is below the allowable value of the grinding stone remaining amount, it is determined that the grinding stone 440 will be consumed before the grinding of all the wafers W in the first wafer box 150a is completed, and a notification is made. In this way, the operator can be notified before the grinding process starts that there will be a need to grind the grinding stone 440 in the first wafer box 150a. The grinding stone 440 is replaced before the grinding process of all the wafers W accommodated in the first wafer box 150a is completed. Therefore, when a notification is given, the operator can replace the grinding stone 440 with a new grinding stone 440 that can grind all the wafers W in the first wafer box 150a before the grinding process, and then perform the grinding process. Therefore, the processing results including thickness of the multiple wafers W to be processed can be made more uniform.

再者,本發明之磨削裝置1並非限定於上述實施形態之裝置,又,關於附加圖式所圖示的各構成等,亦不限定於此,能夠在可以發揮本發明之效果的範圍內作適當變更。Furthermore, the grinding device 1 of the present invention is not limited to the device of the above-mentioned embodiment, and the various structures shown in the attached drawings are not limited thereto, and can be appropriately modified within the scope that can exert the effects of the present invention.

例如,以所設定之加工條件來磨削一片晶圓W時的磨削磨石440的消耗量的計算,並非限定於如先前說明地計算的例子,亦可例如藉由磨石剩餘量檢測機構36與剩餘量辨識部92,來測定磨削一片晶圓W前的磨削磨石440的磨石剩餘量,並進一步測定磨削一片晶圓W後的磨削磨石440的磨石剩餘量,且計算磨削前後的磨石剩餘量之差來求出該消耗量。For example, the calculation of the consumption of the grinding stone 440 when grinding a wafer W under the set processing conditions is not limited to the example of calculation as described previously. For example, the remaining amount of the grinding stone 440 before grinding a wafer W can be measured by the remaining amount detection mechanism 36 and the remaining amount identification unit 92, and the remaining amount of the grinding stone 440 after grinding a wafer W can be further measured, and the difference between the remaining amounts of the grinding stone before and after grinding can be calculated to obtain the consumption.

例如,在本實施形態中,雖然是在和過去進行晶圓W之磨削加工時的加工條件相同的加工條件下進行晶圓W的磨削加工,但在以過去未曾進行的加工條件來對晶圓W施行磨削加工的情況下,是使用晶圓W或假晶圓,並在磨削加工開始前將新的加工條件設定到加工條件設定部91來進行加工實驗,並使已獲得其結果的消耗量資料重新記憶於控制機構9。For example, in the present embodiment, although the grinding process of wafer W is performed under the same processing conditions as those used in the past to grind wafer W, in the case where the grinding process of wafer W is performed under processing conditions that have not been performed in the past, wafer W or a dummy wafer is used, and new processing conditions are set in the processing condition setting unit 91 before the grinding process starts to conduct a processing experiment, and the consumption data of the obtained results are re-stored in the control mechanism 9.

1:磨削裝置 10:基座 12:支柱 150:第1片匣載台 150a:第1片匣 151:第2片匣載台 151a:第2片匣 152:暫置區域 153:對位機構 154a:裝載臂 154b:卸載臂 155:機器人 156:洗淨機構 16:觸控面板 2:磨削進給機構 20:滾珠螺桿 21:導軌 22:馬達 23:升降板 24:保持器 30:保持機構 30a:保持面 35:磨石剩餘量檢測機構 350:投光部 351:受光部 36:磨石剩餘量檢測機構 360:罩殼 362:投光部 363:受光部 364:彈性構件 365:被接觸升降部 38:厚度測定機構 381:第1厚度測定器 382:第2厚度測定器 39:罩蓋 39a:蛇腹蓋 4:磨削機構 40:旋轉軸 41:殼體 42:馬達 43:安裝座 44:磨削輪 440:磨削磨石 441:輪基台 9:控制機構 91:加工條件設定部 92:剩餘量辨識部 93:消耗量資料 95:晶圓片數設定部 96:累積消耗量計算部 99:判斷通知部 A:搬入搬出區域 B:加工區域 L1,L2:消耗量 L9:累積消耗量 L10:值 La,Lc:距離 Ld:剩餘量 W:晶圓 Wa:正面 Wb:背面 Z0,Z1,Z2,Z3,Z4,Z5:高度位置 X,+X,-X,+Y,-Y,+Z,-Z:方向1: Grinding device 10: Base 12: Pillar 150: 1st magazine carrier 150a: 1st magazine 151: 2nd magazine carrier 151a: 2nd magazine 152: Temporary area 153: Alignment mechanism 154a: Loading arm 154b: Unloading arm 155: Robot 156: Cleaning mechanism 16: Touch panel 2: Grinding feed mechanism 20: Ball screw 21: Guide rail 22: Motor 23: Lifting plate 24: Holder 30: Holding mechanism 30a: Holding surface 35: Grinding stone remaining amount detection mechanism 350: Light-emitting part 351: Light-receiving part 36: Grinding stone remaining amount detection mechanism 360: Cover 362: Light-emitting part 363: Light-receiving part 364: Elastic member 365: Contact lifting part 38: Thickness measuring mechanism 381 :1st thickness gauge 382:2nd thickness gauge 39:Cover 39a:Accent cover 4:Grinding mechanism 40:Rotating shaft 41:Casing 42:Motor 43:Mounting seat 44:Grinding wheel 440:Grinding stone 441:Wheel base 9:Control mechanism 91:Processing condition setting unit 92:Remaining quantity identification unit 93:Consumption data 95:Wafer quantity setting unit 96: Cumulative consumption calculation unit 99: Judgment notification unit A: Loading and unloading area B: Processing area L1, L2: Consumption L9: Cumulative consumption L10: Value La, Lc: Distance Ld: Remaining amount W: Wafer Wa: Front Wb: Back Z0, Z1, Z2, Z3, Z4, Z5: Height position X, +X, -X, +Y, -Y, +Z, -Z: Direction

圖1是顯示磨削裝置之一例的立體圖。 圖2是說明將第一片晶圓磨削到成品厚度為止之情況的截面圖。 圖3是說明磨削第二片晶圓而得到消耗量資料的情況之磨削磨石的消耗量的截面圖。 圖4是說明為了藉由剩餘量辨識部來辨識磨削磨石的剩餘量,而從非接觸式的磨石剩餘量檢測機構朝磨削磨石的下表面照射測定光之狀態的截面圖。 圖5是說明為了藉由剩餘量辨識部來辨識磨削磨石的剩餘量,而從非接觸式的磨石剩餘量檢測機構朝輪基台的下表面照射測定光之狀態的截面圖。 圖6是說明為了藉由剩餘量辨識部來辨識磨削磨石的剩餘量,而使磨削磨石的下表面接觸於接觸式的磨石剩餘量檢測機構之狀態的截面圖。 圖7是說明為了藉由剩餘量辨識部辨識磨削磨石的剩餘量,而使輪基台的下表面接觸於接觸式的磨石剩餘量檢測機構之狀態的截面圖。FIG. 1 is a perspective view showing an example of a grinding device. FIG. 2 is a cross-sectional view showing a situation where a first wafer is ground to a finished product thickness. FIG. 3 is a cross-sectional view showing a situation where a second wafer is ground to obtain consumption data. FIG. 4 is a cross-sectional view showing a state where a non-contact type grindstone remaining amount detection mechanism irradiates a measuring light toward the lower surface of the grinding stone in order to identify the remaining amount of the grinding stone by the remaining amount identification unit. FIG. 5 is a cross-sectional view showing a state where a non-contact type grindstone remaining amount detection mechanism irradiates a measuring light toward the lower surface of the wheel base in order to identify the remaining amount of the grinding stone by the remaining amount identification unit. FIG6 is a cross-sectional view showing a state in which the lower surface of the grinding stone is brought into contact with the contact type grinding stone remaining amount detection mechanism in order to identify the remaining amount of the grinding stone by the remaining amount identification unit. FIG7 is a cross-sectional view showing a state in which the lower surface of the wheel base is brought into contact with the contact type grinding stone remaining amount detection mechanism in order to identify the remaining amount of the grinding stone by the remaining amount identification unit.

1:磨削裝置1: Grinding device

10:基座10: Base

12:支柱12: Pillar

150:第1片匣載台150: 1st film cassette carrier

150a:第1片匣150a: 1st film box

151:第2片匣載台151: Second cassette carrier

151a:第2片匣151a: Second film cassette

152:暫置區域152: Temporary Area

153:對位機構153: Positioning mechanism

154a:裝載臂154a: Loading arm

154b:卸載臂154b: Unloading arm

155:機器人155:Robot

156:洗淨機構156: Cleaning mechanism

16:觸控面板16: Touch panel

2:磨削進給機構2: Grinding feed mechanism

20:滾珠螺桿20:Ball screw

21:導軌21:Guide rail

22:馬達22: Motor

23:升降板23: Lifting plate

24:保持器24: Retainer

30:保持機構30:Maintaining mechanism

30a:保持面30a: Keep the face

35:磨石剩餘量檢測機構35: Grinding stone remaining amount detection mechanism

350:投光部350: Lighting unit

351:受光部351: Light Receiving Department

38:厚度測定機構38: Thickness measurement mechanism

381:第1厚度測定器381: 1st thickness measuring device

382:第2厚度測定器382: Second thickness measuring device

39:罩蓋39: Cover

39a:蛇腹蓋39a: bellied cover

4:磨削機構4: Grinding mechanism

40:旋轉軸40: Rotation axis

41:殼體41: Shell

42:馬達42: Motor

43:安裝座43: Mounting seat

44:磨削輪44: Grinding wheel

440:磨削磨石440: Grinding Stone

441:輪基台441: Wheel base

9:控制機構9: Controlling agency

91:加工條件設定部91: Processing condition setting department

92:剩餘量辨識部92: Remaining quantity identification unit

93:消耗量資料93: Consumption data

95:晶圓片數設定部95: Wafer number setting unit

96:累積消耗量計算部96: Cumulative consumption calculation unit

99:判斷通知部99: Judgment Notification Department

A:搬入搬出區域A: Move in and move out area

B:加工區域B: Processing area

W:晶圓W: Wafer

Wa:正面Wa: Front

Wb:背面Wb:Back

+X,-X,+Y,-Y,+Z,-Z:方向+X,-X,+Y,-Y,+Z,-Z: Direction

Claims (1)

一種磨削裝置,具備:保持機構,藉由保持面來保持晶圓;磨削機構,裝設磨削磨石並對已保持於該保持機構之晶圓進行磨削;磨削進給機構,將該磨削機構與該保持機構相對地在垂直於該保持面的方向上磨削進給;片匣載台,載置可收納複數個晶圓的片匣;及搬送機構,在該片匣與該保持機構之間搬送晶圓,前述磨削裝置是以該磨削磨石對已收納於該片匣的晶圓進行磨削,並具備: 加工條件設定部,設定為了使用該磨削磨石來磨削晶圓而至少包含該磨削磨石的類型與該磨削進給機構的進給速度之加工條件; 消耗量資料,表示以所設定的該加工條件來磨削一片晶圓時的該磨削磨石的消耗量; 晶圓片數設定部,設定已收納於該片匣之晶圓的片數; 累積消耗量計算部,參照該消耗量資料,並藉由公式來計算將已收納於該片匣之晶圓全部磨削時的該磨削磨石的累積消耗量,其中前述公式是:每一片晶圓的該磨削磨石的消耗量×已設定於該晶圓片數設定部之晶圓的片數; 剩餘量辨識部,辨識該磨削磨石的剩餘量;及 判斷通知部,在加工開始前,若從藉由該剩餘量辨識部所辨識出的該磨削磨石的剩餘量扣除掉藉由該累積消耗量計算部所計算出的該累積消耗量後的值已成為磨石剩餘量容許值以下時,即判斷為該磨削磨石會在完成該片匣內的全部的晶圓的磨削前耗盡,並進行通知。A grinding device comprises: a holding mechanism for holding a wafer by a holding surface; a grinding mechanism for mounting a grinding stone and grinding the wafer held by the holding mechanism; a grinding feed mechanism for grinding and feeding the grinding mechanism and the holding mechanism relative to each other in a direction perpendicular to the holding surface; a cassette carrier for carrying a cassette that can accommodate a plurality of wafers; and a conveying mechanism for conveying wafers between the cassette and the holding mechanism, wherein the grinding device grinds the wafers accommodated in the cassette with the grinding stone, and comprises: a processing condition setting unit for setting processing conditions for grinding wafers with the grinding stone, which at least include the type of the grinding stone and the feed speed of the grinding feed mechanism; consumption data, indicating the consumption of the grinding stone when grinding a wafer with the set processing conditions ; Wafer number setting unit, sets the number of wafers stored in the wafer cassette; Accumulated consumption calculation unit, refers to the consumption data and uses a formula to calculate the accumulated consumption of the grinding stone when all the wafers stored in the wafer cassette are ground, wherein the aforementioned formula is: the consumption of the grinding stone for each wafer × the number of wafers set in the wafer number setting unit; Remaining quantity identification unit , identifying the remaining amount of the grinding stone; and The judgment and notification unit, before the start of processing, if the value obtained by deducting the accumulated consumption calculated by the accumulated consumption calculation unit from the remaining amount of the grinding stone identified by the remaining amount identification unit is below the allowable value of the grinding stone remaining amount, it is judged that the grinding stone will be consumed before the grinding of all the wafers in the wafer cassette is completed, and a notification is made.
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