TW202123332A - Grinding apparatus completing a grinding process without changing a grindstone for all wafers in a cassette in a grinding apparatus - Google Patents
Grinding apparatus completing a grinding process without changing a grindstone for all wafers in a cassette in a grinding apparatus Download PDFInfo
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- TW202123332A TW202123332A TW109142697A TW109142697A TW202123332A TW 202123332 A TW202123332 A TW 202123332A TW 109142697 A TW109142697 A TW 109142697A TW 109142697 A TW109142697 A TW 109142697A TW 202123332 A TW202123332 A TW 202123332A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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Abstract
Description
本發明是有關於一種以磨削磨石來磨削晶圓的磨削裝置。The invention relates to a grinding device for grinding a wafer with a grinding stone.
以磨削磨石對已保持於保持機構之晶圓進行磨削的磨削裝置,因為會因磨削晶圓而使磨削磨石磨耗,所以在磨削磨石耗盡前即使是在實施加工的期間中,仍然會為了更換磨削磨石而通知作業人員。並且,在出現該通知後,作業人員會將磨削磨石更換為新的磨削磨石。A grinding device that uses a grinding grindstone to grind a wafer held in a holding mechanism. The grinding grindstone is worn out by the grinding of the wafer. Therefore, even if the grinding grindstone is exhausted, it is performed During the processing, the operator will still be notified in order to replace the grinding stone. And, after the notification appears, the worker will replace the grinding grindstone with a new grinding grindstone.
如例如專利文獻1所揭示地,在磨削加工中,裝置會以逐次且即時的方式辨識磨削磨石的剩餘量,且進一步於每磨削一片晶圓時,從該磨削磨石的剩餘量扣除掉從磨削結束時之磨削機構的高度所計算出的磨石消耗量後,若磨削磨石的剩餘量變得比事先設定的界限值更小的話即會進行上述通知。 先前技術文獻 專利文獻As disclosed in Patent Document 1, for example, in the grinding process, the device recognizes the remaining amount of the grinding stone in a sequential and instantaneous manner, and further, each time a wafer is ground, the grinding stone is After subtracting the remaining amount from the grinding stone consumption calculated from the height of the grinding mechanism at the end of the grinding, the above notification will be made if the remaining amount of the grinding stone becomes smaller than the threshold value set in advance. Prior art literature Patent literature
專利文獻1:日本特開2015-036170號公報Patent Document 1: Japanese Patent Application Publication No. 2015-036170
發明欲解決之課題The problem to be solved by the invention
在磨削裝置中,是例如在晶圓片匣收納有25片晶圓,且從片匣中將晶圓一片一片地取出而連續地進行磨削。從而,若在例如磨削5片晶圓時發出上述之通知的話,會成為在將25片晶圓磨削完畢的中途更換磨削磨石之情形。In the grinding device, for example, 25 wafers are stored in a wafer cassette, and the wafers are taken out from the cassette one by one to continuously perform grinding. Therefore, if the above notification is issued when, for example, 5 wafers are ground, the grinding stone may be replaced in the middle of the grinding of 25 wafers.
並且,由於更換磨削磨石,而變得暫時在加工室內沒有旋轉的磨削磨石、或將加工室向外部氣體解放,藉此會在加工室內的溫度上產生變動。有時會因該溫度變動而導致在更換磨削磨石之前與之後,磨削後之晶圓的厚度在每個晶圓上不同。 據此,有以下課題:在以磨削磨石磨削晶圓的磨削裝置中,在不更換磨削磨石的情形下,完成片匣內之全部的晶圓的磨削加工。 用以解決課題之手段In addition, due to the replacement of the grinding grindstone, there is temporarily no grinding grindstone rotating in the processing chamber or the processing chamber is released to the outside air, thereby causing fluctuations in the temperature in the processing chamber. This temperature change may cause the thickness of the wafer after grinding to be different from wafer to wafer before and after the grinding stone is replaced. Accordingly, there is the following problem: in a grinding device that grinds a wafer with a grinding stone, the grinding process of all the wafers in the cassette is completed without replacing the grinding stone. Means to solve the problem
用於解決上述課題之本發明是一種磨削裝置,其具備:保持機構,藉由保持面來保持晶圓;磨削機構,裝設磨削磨石並對已保持於該保持機構之晶圓進行磨削;磨削進給機構,將該磨削機構與該保持機構相對地在垂直於該保持面的方向上磨削進給;片匣載台,載置可收納複數個晶圓的片匣;及搬送機構,在該片匣與該保持機構之間搬送晶圓,前述磨削裝置是以該磨削磨石對已收納於該片匣的晶圓進行磨削,並具備: 加工條件設定部,設定為了使用該磨削磨石來磨削晶圓而至少包含該磨削磨石的類型與該磨削進給機構的進給速度之加工條件; 消耗量資料,表示以所設定的該加工條件來磨削一片晶圓時的該磨削磨石的消耗量; 晶圓片數設定部,設定已收納於該片匣之晶圓的片數; 累積消耗量計算部,參照該消耗量資料,並藉由公式來計算將已收納於該片匣之晶圓全部磨削時的該磨削磨石的累積消耗量,其中前述公式是:每一片晶圓的該磨削磨石的消耗量×已設定於該晶圓片數設定部之晶圓的片數; 剩餘量辨識部,辨識該磨削磨石的剩餘量;及 判斷通知部,在加工開始前,若從藉由該剩餘量辨識部所辨識出的該磨削磨石的剩餘量扣除掉藉由該累積消耗量計算部所計算出的該累積消耗量後的值已成為磨石剩餘量容許值以下時,即判斷為該磨削磨石會在完成該片匣內的全部的晶圓的磨削前耗盡,並進行通知。 發明效果The present invention for solving the above-mentioned problems is a grinding device including: a holding mechanism for holding a wafer by a holding surface; a grinding mechanism for installing a grinding stone and holding a wafer in the holding mechanism Grinding; grinding and feeding mechanism, the grinding mechanism and the holding mechanism are opposite to the holding mechanism in a direction perpendicular to the holding surface grinding and feeding; cassette stage, placing a plurality of wafers can be accommodated And a transport mechanism for transporting wafers between the cassette and the holding mechanism, the aforementioned grinding device uses the grinding stone to grind the wafers stored in the cassette, and includes: The processing condition setting unit sets processing conditions including at least the type of the grinding stone and the feed speed of the grinding feed mechanism in order to use the grinding stone to grind the wafer; The consumption data indicates the consumption of the grinding stone when grinding a wafer under the set processing conditions; The wafer number setting section sets the number of wafers stored in the cassette; The cumulative consumption calculation part refers to the consumption data, and calculates the cumulative consumption of the grinding stone when all the wafers stored in the cassette are ground by a formula, wherein the aforementioned formula is: each piece The consumption of the grinding stone of the wafer × the number of wafers that have been set in the wafer number setting section; The remaining amount identification part identifies the remaining amount of the grinding stone; and The judgment notification unit, before the start of processing, deducts the accumulated consumption amount calculated by the accumulated consumption amount calculation unit from the remaining amount of the grinding stone identified by the remaining amount identification unit When the value is below the allowable value for the remaining amount of the grindstone, it is determined that the grinding grindstone will be exhausted before the completion of the grinding of all the wafers in the cassette, and a notification is made. Invention effect
以往有時會在磨削加工中進行磨削磨石的更換之通知,而出現了以下情形:無法將已收納於片匣內的複數個晶圓以相同的磨削磨石及大致相同的加工室內溫度來磨削加工。據此,已產生有以下情況:複數片晶圓的磨削後之厚度不均一。 但是,本發明之磨削裝置由於具備:加工條件設定部,設定為了使用磨削磨石來磨削晶圓而至少包含磨削磨石的類型與磨削進給機構的進給速度之加工條件;消耗量資料,表示以所設定之加工條件來磨削一片晶圓時的磨削磨石的消耗量;晶圓片數設定部,設定已收納於片匣之晶圓的片數;累積消耗量計算部,參照消耗量資料,並藉由公式來計算將已收納於片匣之晶圓全部磨削時的磨削磨石的累積消耗量,其中前述公式是:每一片晶圓的磨削磨石的消耗量×已設定於晶圓片數設定部之晶圓的片數;剩餘量辨識部,辨識磨削磨石的剩餘量;及判斷通知部,在加工開始前,若從藉由剩餘量辨識部所辨識出的磨削磨石的剩餘量扣除掉藉由累積消耗量計算部所計算出的累積消耗量後的值已成為磨石剩餘量容許值以下時,即判斷為磨削磨石會在完成片匣內的全部的晶圓的磨削前耗盡,並進行通知,藉此,可在開始磨削加工之前向作業人員通知將會有必須在完成已收納於片匣的全部的晶圓的磨削加工前更換磨削磨石之情形,因此在出現有通知的情況下,作業人員可以在磨削加工前更換磨削磨石,並於之後開始進行磨削加工,所以可以將所加工之複數個晶圓的包含厚度等之加工結果形成得較均一。In the past, notification of the replacement of the grinding grindstone was sometimes performed during the grinding process, and the following situation occurred: it is impossible to use the same grinding grindstone and almost the same processing for multiple wafers stored in the cassette The room temperature is used for grinding. According to this, the following situation has occurred: the thickness of a plurality of wafers after grinding is not uniform. However, the grinding device of the present invention is provided with: a processing condition setting unit that sets processing conditions including at least the type of the grinding stone and the feed speed of the grinding feed mechanism in order to use the grinding stone to grind the wafer. ;Consumption data, indicating the consumption of grinding stones when grinding a wafer under the set processing conditions; the number of wafers setting section, set the number of wafers stored in the cassette; cumulative consumption The amount calculation part refers to the consumption data and uses a formula to calculate the cumulative consumption of the grinding stone when all the wafers stored in the cassette are ground. The aforementioned formula is: grinding of each wafer The consumption of the grindstone × the number of wafers that have been set in the wafer number setting section; the remaining amount identification section, which identifies the remaining amount of the grindstone; and the judgment notification section. When the remaining amount of the grinding stone identified by the remaining amount identification unit subtracting the accumulated consumption amount calculated by the accumulated consumption amount calculation unit has become less than the allowable value of the remaining amount of grindstone, it is judged to be grinding The grindstone will be exhausted before the completion of the grinding of all the wafers in the cassette, and a notification will be given. This will inform the operator before the grinding process that there will be a need to complete the processing of the wafers that have been stored in the cassette. The grinding stone is replaced before the grinding of all wafers. Therefore, if there is a notice, the operator can replace the grinding stone before the grinding process and start the grinding process afterwards, so The processing results including the thickness and the like of the processed multiple wafers can be formed more uniformly.
用以實施發明之形態The form used to implement the invention
圖1所示之磨削裝置1是藉由磨削機構4來磨削已保持於保持機構30之晶圓W的裝置。磨削裝置1的基座10上的前方(-Y方向側)是成為對保持機構30進行晶圓W的搬入搬出之區域即搬入搬出區域A,基座10上的後方(+Y方向側)是成為藉由磨削機構4來進行已保持於保持機構30上之晶圓W的磨削加工之區域即加工區域B。
再者,本發明之磨削裝置亦可形成為以下構成:具備粗磨削機構與精磨削機構之雙軸來作為磨削機構,並以旋轉的轉台將保持有晶圓W的保持機構30定位到各磨削機構的下方。The grinding apparatus 1 shown in FIG. 1 is an apparatus for grinding the wafer W held by the
圖1所示之晶圓W在本實施形態中,是由矽母材等所構成之圓形的半導體晶圓,且在圖1中朝向下方的晶圓W的正面Wa形成有複數個器件,並被未圖示之保護膠帶貼附而受到保護。朝向上側之晶圓W的背面Wb是成為施行磨削加工的被加工面。再者,晶圓W除了矽以外,亦可藉砷化鎵、藍寶石、氮化鎵、樹脂、陶瓷或碳化矽等來構成。In this embodiment, the wafer W shown in FIG. 1 is a circular semiconductor wafer composed of a silicon base material, etc., and a plurality of devices are formed on the front surface Wa of the wafer W facing downward in FIG. 1. It is protected by being attached by a protective tape not shown in the figure. The back surface Wb of the wafer W facing the upper side becomes the surface to be processed on which the grinding process is performed. Furthermore, in addition to silicon, the wafer W can also be made of gallium arsenide, sapphire, gallium nitride, resin, ceramic, or silicon carbide.
於基座10的正面側(-Y方向側)設置有第1片匣載台150及第2片匣載台151,可在第1片匣載台150載置以層架形式收納複數個加工前的晶圓W之第1片匣150a,且可在第2片匣載台151載置以層架形式收納複數個加工後的晶圓W之第2片匣151a。A
在第1片匣150a的+Y方向側的開口的後方,配設有可從第1片匣150a搬出加工前的晶圓W並且將加工後的晶圓W搬入第2片匣151a的機器人155。在相鄰於機器人155的位置,設置有暫置區域152,在暫置區域152配設有對位機構153。對位機構153是將從第1片匣150a搬出而載置於暫置區域152的晶圓W,以進行縮小直徑的對位銷來對位到預定的位置(對中(centering))。Behind the opening on the +Y direction side of the
在與對位機構153相鄰的位置上,配置有以保持有晶圓W的狀態來旋繞的裝載臂154a。裝載臂154a是將已在對位機構153中進行對位的晶圓W保持,並往配設於加工區域B內的保持機構30搬送。於裝載臂154a的旁邊設置有以保持有加工後的晶圓W的狀態來旋繞的卸載臂154b。在與卸載臂154b相接近的位置上,配置有對被卸載臂154b所搬送之加工後的晶圓W進行洗淨的單片式的洗淨機構156。已被洗淨機構156洗淨、乾燥的晶圓W是被機器人155搬入到第2片匣151a。At a position adjacent to the
在本實施形態中,是藉由上述機器人155、裝載臂154a及卸載臂154b來構成在第1片匣150a及第2片匣151a與保持機構30之間搬送晶圓W的搬送機構。In this embodiment, the
配設於磨削裝置1的基座10上且保持晶圓W的保持機構30是例如其外形在平面視角下為圓形狀且具備有保持面30a,前述保持面30a連通於未圖示之吸引源且由多孔構件等所構成並可吸引保持晶圓W。又,保持機構30是被罩蓋39從周圍包圍,且藉由未圖示的Y軸方向進給機構而變得可在基座10上於Y軸方向上往返移動,前述Y軸方向進給機構是配設在罩蓋39及連結於罩蓋39的蛇腹蓋39a之下。又,保持機構30以Z軸方向的旋轉軸為中心而形成為可旋轉。The
在加工區域B的後方(+Y方向側)豎立設置有支柱12,在支柱12的-Y方向側的前表面配設有磨削進給機構2,前述磨削進給機構2是將磨削機構4與保持機構30相對地在垂直於保持面30a的Z軸方向(鉛直方向)上磨削進給。磨削進給機構2具備有具有Z軸方向之軸心的滾珠螺桿20、與滾珠螺桿20平行地配設的一對導軌21、連結於滾珠螺桿20的上端且使滾珠螺桿20旋動的馬達22、內部的螺帽螺合於滾珠螺桿20且側部滑接於導軌21的升降板23、及連結於升降板23且保持磨削機構4的保持器24,當馬達22使滾珠螺桿20旋動時,會伴隨於此而使升降板23被導軌21所導引並於Z軸方向上往返移動,而將保持於保持器24上的磨削機構4朝Z軸方向磨削進給。A
對保持在保持機構30上的晶圓W進行磨削加工的磨削機構4具備軸方向為Z軸方向的旋轉軸40、將旋轉軸40支撐成可旋轉的殼體41、旋轉驅動旋轉軸40的馬達42、連接於旋轉軸40的下端的圓環狀的安裝座43、及可裝卸地裝設於安裝座43的下表面的磨削輪44。The
磨削輪44具備輪基台441、及以環狀的方式配設於輪基台441的底面之大致長方體形狀的複數個磨削磨石440。磨削磨石440是例如以預定的黏合劑等來將磨削磨粒固接並成形。The
於旋轉軸40的內部於旋轉軸40的軸方向(Z軸方向)上貫通而形成有成為磨削水的通道之未圖示的流路。此流路是通過安裝座43,並在輪基台441的底面以可以朝向磨削磨石440噴出磨削水的方式開口。A flow path (not shown) which is a passage of grinding water penetrates through the inside of the
在成為已下降至磨削晶圓W時的高度位置之磨削輪44的附近的位置上配設有厚度測定機構38,前述厚度測定機構38是例如在磨削中以接觸式方式來測定晶圓W的厚度。
厚度測定機構38具備有例如一對厚度測定器(高度規)、亦即保持機構30的保持面30a之高度位置測定用的第1厚度測定器381、及被保持機構30所保持之晶圓W的被磨削面即背面Wb之高度位置測定用的第2厚度測定器382。A
第1厚度測定器381及第2厚度測定器382在其各前端具有朝上下方向升降而接觸於各測定面的接觸件。第1厚度測定器381(第2厚度測定器382)是以可上下移動的方式被支撐,並且形成為可對各測定面以適當之力來按壓。厚度測定機構38是藉由第1厚度測定器381來檢測成為基準面之保持面30a的高度位置,並藉由第2厚度測定器382來檢測成為被磨削之晶圓W的上表面之背面Wb的高度位置,且計算兩者的檢測值之差,而可以藉此在磨削中依序測定晶圓W的厚度。
再者,厚度測定機構38亦可為非接觸式的厚度測定機構。The first thickness measuring
磨削裝置1具備有進行裝置整體的控制之控制機構9,控制機構9是由依照控制程式進行運算處理之CPU及記憶體等之記憶媒體等所構成,並透過未圖示之有線或無線的通訊路徑而電連接於使保持機構30在Y軸方向上移動之未圖示的Y軸方向進給機構、以及磨削機構4等,且可在控制機構9的控制之下,進行吸引保持有晶圓W之保持機構30的Y軸方向上之移動控制或對磨削機構4之定位控制、以及磨削機構4中的磨削輪44的旋轉動作之控制等。The grinding device 1 is equipped with a
例如,可將控制機構9電連接於使磨削機構4上下移動之磨削進給機構2的馬達22。
例如,在馬達22為伺服馬達的情況下,伺服馬達的旋轉編碼器是連接到亦具有作為伺服放大器之功能的控制機構9,且可在從控制機構9的輸出介面對伺服馬達供給動作訊號後,將伺服馬達的旋轉數作為編碼訊號來對控制機構9的輸入介面輸出。並且,已接收到編碼訊號的控制機構9可以依據伺服馬達的旋轉角度來依序辨識磨削機構4的移動量,並藉此依序辨識磨削機構4的高度位置。For example, the
例如,磨削裝置1具備有觸控面板16(或附屬裝置之鍵盤等)來作為用於讓作業人員對磨削裝置1輸入加工條件等的輸入機構。例如,觸控面板16是電連接於控制機構9,且檢測作業人員以手指觸碰的位置,並將表示檢測結果的訊號發送至控制機構9。在觸控面板16上,可顯現輸入畫面及顯示畫面,可以藉由輸入畫面讓作業人員將加工條件的各種資訊等輸入並設定於磨削裝置1,且可以藉由顯示畫面來顯示加工條件的各種資訊等、晶圓W之經磨削的背面Wb的狀態、及裝置的各部的狀態等。For example, the grinding device 1 is provided with a touch panel 16 (or a keyboard of an accessory device, etc.) as an input mechanism for allowing an operator to input processing conditions and the like to the grinding device 1. For example, the
磨削裝置1具備有:加工條件設定部91,設定為了使用磨削磨石440來磨削晶圓W而至少包含磨削磨石440的類型與磨削進給機構2的進給速度之加工條件;消耗量資料93,表示以所設定之加工條件來磨削一片晶圓W時的磨削磨石440的消耗量;晶圓片數設定部95,設定已收納於第1片匣150a之加工前的晶圓W的片數;及累積消耗量計算部96,參照消耗量資料93,並藉由公式來計算將已收納於第1片匣150a之晶圓W全部磨削時的磨削磨石440的累積消耗量,其中前述公式是:[每一片晶圓W的磨削磨石440的消耗量]×[已設定於晶圓片數設定部95之晶圓W的片數]。
再者,亦可除了作業人員將如上述地收納於第1片匣150a之加工前的晶圓W的片數設定輸入到晶圓片數設定部95以外,還具備偵測已收納於第1片匣150a之晶圓W的感測器,並藉由以感測器進行晶圓W的偵測來檢測已收納於第1片匣150a之晶圓W的片數,且進一步將其設定到晶圓片數設定部95。The grinding device 1 is provided with a processing
在本實施形態中,加工條件設定部91是設定在控制機構9的記憶媒體的一個區域,且當例如讓作業人員至少將由磨削磨石440的磨粒(例如鑽石磨粒等)及黏合劑(例如樹脂、金屬、或陶瓷(vitrified)等)之組合等所決定的類型、與由磨削進給機構2所進行之磨削機構4的磨削進給速度作為加工條件的一部分來輸入到未圖示之觸控面板16時,即可將該加工條件設定(記憶)於加工條件設定部91。再者,亦可更包含有磨削輪44的旋轉速度、保持有晶圓W之保持機構30的旋轉速度、晶圓W的種類、晶圓W的成品厚度等,來作為設定於加工條件設定部91之加工條件的一部分。In this embodiment, the processing
在本實施形態中,消耗量資料93是記憶於控制機構9的記憶媒體的一個區域之資料。消耗量資料93是例如在過去之實驗所得到之資料。
以下,說明可得到消耗量資料93之情況的一例。In this embodiment, the
在設定於磨削裝置1之加工條件設定部91的加工條件中,磨削磨石440之類型是類型1,由磨削進給機構2所進行之磨削機構4的磨削進給速度是設為磨削進給速度V1。又,例如,磨削裝置1中的磨削加工第一片晶圓W之磨削前的厚度為300μm,晶圓W之成品厚度是設為100μm。Among the processing conditions set in the processing
如圖2所示,將保持有晶圓W之保持機構30移動到磨削機構4之下,並將保持機構30定位成使磨削機構4的磨削輪44的旋轉中心相對於晶圓W的旋轉中心在水平方向上偏離相當於預定距離,而使磨削輪44的旋轉軌跡通過晶圓W的旋轉中心。As shown in FIG. 2, the holding
之後,在圖1所示之控制機構9所進行的控制下,藉由驅動磨削進給機構2的馬達22,來使磨削機構4從圖2所示之事先所掌握的預定的原點高度位置以預定速度逐漸下降。又,已開始下降之磨削機構4的高度位置,可藉由控制機構9來隨時掌握。磨削加工中,以厚度測定機構38來即時地依序測定晶圓W的厚度。將該測定結果傳送至圖1所示之控制機構9,並將由馬達22所形成之磨削機構4的磨削進給量控制成接近於目標的成品厚度,而將第一片晶圓W磨削至成品厚度(100μm)。After that, under the control of the
關於磨削磨石440的消耗量,是控制機構9從磨削前之晶圓W的厚度與磨削後之晶圓W的厚度之差來辨識晶圓W所被磨削的磨削量,且可以進一步使控制機構9辨識自磨削磨石440接觸於晶圓W的背面Wb時之高度位置Z0起的磨削機構4的磨削進給量(下降量)(亦即磨削前的磨削機構4的高度位置Z0與磨削結束時的磨削機構4的高度位置Z1之差),來計算為:[磨削機構4的磨削進給量]-[以厚度測定機構38所測定出的晶圓W所被磨削的磨削量]=[磨削磨石440的消耗量]。
例如,已將第一片晶圓W磨削至成品厚度的情況之磨削磨石440的最初的消耗量是設為消耗量L1。本消耗量L1基於對第一片晶圓W施行磨削加工並非穩定的情況、或產生設置(set-up)誤差的情況較多等之理由,因而基本上並未能採用作為消耗量資料93。Regarding the consumption of the grinding
接著,可藉由將圖3所示之對第二片晶圓W的磨削加工如上述所說明地同樣地實施,而將晶圓W磨削至成品厚度100μm,且辨識磨削結束時之磨削機構4的高度位置Z2,進而計算圖3所示之磨削磨石440的消耗量L2。因為對第二片晶圓W的磨削加工是穩定進行,且未產生設置誤差等,所以該消耗量L2會成為在所設定之加工條件(亦即至少磨削磨石440的類型為類型1,由磨削進給機構2所進行之磨削機構4的磨削進給速度為磨削進給速度V1之加工條件)下磨削了一片晶圓W時的磨削磨石440的消耗量(消耗量資料93)。再者,亦可進一步磨削複數片晶圓W,來計算每磨削一片之磨削磨石440的消耗量,並將該複數個消耗量的平均值認定為消耗量資料93。
又,亦可將第一片晶圓W磨削至成品厚度時之磨削機構4的高度位置、與將第二片晶圓W磨削至成品厚度時之磨削機構4的高度位置之差設為磨削了一片晶圓W時的磨削磨石440的消耗量(消耗量資料93)。Next, by performing the grinding process of the second wafer W shown in FIG. 3 in the same manner as described above, the wafer W can be ground to a finished product thickness of 100 μm, and the grinding process at the end of the grinding process can be identified. The height position Z2 of the grinding
磨削裝置1除了如上述而得到的消耗量資料93以外,也可在控制機構9具備有按每個加工條件而不同之複數個消耗量資料。In addition to the
如圖1所示,磨削裝置1具備有辨識磨削磨石440之剩餘量的剩餘量辨識部92。剩餘量辨識部92是組入於例如控制機構9。又,剩餘量辨識部92是透過有線或無線的通訊路徑而電連接於圖1所示之磨石剩餘量檢測機構35。As shown in FIG. 1, the grinding device 1 is provided with a remaining
非接觸式的磨石剩餘量檢測機構35是配設於例如圍繞保持機構30的罩蓋39上,磨石剩餘量檢測機構35是藉由未圖示之Y軸方向進給機構而變得可和在Y軸方向上可往返移動的保持機構30及罩蓋39一起在Y軸方向上往返移動。再者,磨石剩餘量檢測機構35的配設位置只要是成為磨削機構4的下方之位置即可,並不限定於在罩蓋39上之構成,亦可形成為可移動。The non-contact type remaining amount of
磨石剩餘量檢測機構35是例如反射型(擴散反射型或限定反射型等)的光電感測器,且是將投光部350與受光部351內置於1個感測放大器內。
再者,在保持機構30與磨石剩餘量檢測機構35之間,亦可設置有未圖示之遮蔽板,前述遮蔽板會防止磨削屑等從保持機構30側進入磨石剩餘量檢測機構35側之情形。The remaining amount of
以下,針對藉由磨削裝置1磨削晶圓W的情況下的磨削裝置1的各構成要素的動作進行說明。
首先,例如作業人員從顯示於觸控面板16的輸入畫面上的複數個加工條件,選擇對於接下來要加工的晶圓W的加工條件,並輸入到控制機構9。所選擇的加工條件是至少設為磨削磨石440的類型為類型1,由磨削進給機構2所進行之磨削機構4的磨削進給速度為磨削進給速度V1的加工條件。該已選擇的加工條件是設定在加工條件設定部91。Hereinafter, the operation of each component of the grinding device 1 when the wafer W is ground by the grinding device 1 will be described.
First, for example, an operator selects the processing conditions for the wafer W to be processed next from a plurality of processing conditions displayed on the input screen of the
又,作業人員從觸控面板16的輸入畫面,將已收納於第1片匣150a的磨削加工前的晶圓W的片數輸入到控制機構9。再者,該晶圓W的片數設定亦可設成磨削裝置1藉由感測器等自動地掌握已載置於第1片匣載台150之第1片匣150a內的晶圓W的片數之構成。該晶圓W的片數是設為例如25片。然後,可將晶圓W的片數25片設定到晶圓片數設定部95。In addition, the operator inputs the number of wafers W stored in the
已組入控制機構9之累積消耗量計算部96,參照已記憶於控制機構9的記憶媒體的消耗量資料93,來計算[每一片晶圓W的磨削磨石440之消耗量]×[已設定於晶圓片數設定部95之晶圓W的片數]=[圖3所示之消耗量L2]×25=將已收納於第1片匣150a的25片晶圓W全部磨削時的磨削磨石440的累積消耗量L9。The cumulative
又,可藉由磨石剩餘量檢測機構35及剩餘量辨識部92,來辨識裝設於磨削機構4之磨削磨石440的剩餘量。該剩餘量辨識可在例如磨削裝置1的加工開始前的暖機運轉時等進行。
在該剩餘量辨識中,首先是藉由未圖示之Y軸方向進給機構,來將例如和保持機構30一起移動的磨石剩餘量檢測機構35定位到位於圖4所示之任意的高度位置Z3之磨削機構4的磨削磨石440的下表面正下方。
然後,磨石剩餘量檢測機構35的投光部350朝向磨削磨石440的下表面照射測定光。然後,可以藉由以由CCD等所構成之受光部351接收在磨削磨石440的下表面反射之測定光,而依據光學上的三角測距之測定原理等來測定從磨石剩餘量檢測機構35到磨削磨石440的下表面之Z軸方向上的距離。該距離為例如距離La。可從磨石剩餘量檢測機構35對控制機構9傳送關於距離La之資訊,並記憶於控制機構9。In addition, the remaining amount of the grinding
接著,藉由未圖示之Y軸方向進給機構,將磨石剩餘量檢測機構35定位到磨削機構4的輪基台441的下表面正下方。再者,維持磨削機構4之高度位置Z3。
然後,磨石剩餘量檢測機構35的投光部350朝向輪基台441的下表面照射測定光。然後,可以藉由受光部351接收在輪基台441的下表面反射之測定光,來測定從磨石剩餘量檢測機構35到輪基台441的下表面之Z軸方向上的距離Lc。從磨石剩餘量檢測機構35對控制機構9傳送關於距離Lc之資訊,並記憶於控制機構9。Next, the grindstone remaining
已組入控制機構9的剩餘量辨識部92,是將從距離Lc減去距離La後的值辨識為磨削磨石440的剩餘量。例如,成為[距離Lc]~[距離La]=磨削磨石440的剩餘量Ld。The remaining
磨削磨石440之剩餘量的辨識並不限定於上述之實施形態。
例如,磨削裝置1亦可具備有圖6所示之接觸式的磨石剩餘量檢測機構36來取代磨石剩餘量檢測機構35。
磨石剩餘量檢測機構36具備有例如,供磨削磨石440的下表面或輪基台441的下表面接觸且可升降的被接觸升降部365、讓被接觸升降部365以可在Z軸方向上升降的方式容置的罩殼360、配設於罩殼360的內部底面且將被接觸升降部365支撐成可升降的彈簧等之彈性構件364、及檢測藉由磨削進給機構2而下降之磨削磨石440的下表面或輪基台441的下表面接觸於被接觸升降部365而被接觸升降部365開始下降時的透射型的光感測器。
例如,磨石剩餘量檢測機構36可以透過未圖示之無線或有線的通訊路徑來將各種檢測訊號發送至圖1所示之控制機構9。The recognition of the remaining amount of the grinding
檢測因下降之磨削磨石440的下表面或輪基台441的下表面接觸而被接觸升降部365開始下降時的透射型的光感測器具備有配設於罩殼360的側壁的內側面且互相在Y軸方向上相向的投光部362及受光部363。藉由被接觸升降部365下降,投光部362所投射之測定光會被遮光,藉此受光部363會檢測到受光量的減少,而可檢測磨削磨石440的下表面或輪基台441的下表面已接觸於被接觸升降部365之情形。再者,磨石剩餘量檢測機構36並不限定於透射型的光感測器,亦可為靜電容量型的近接感測器,亦可為配設於被接觸升降部365的上表面而直接檢測已接觸磨削磨石440的下表面或輪基台441的下表面之壓力感測器等。The transmissive light sensor that detects when the lower surface of the falling grinding
藉由圖6所示之磨石剩餘量檢測機構36及剩餘量辨識部92,來說明辨識磨削磨石440的剩餘量之情況。
藉由未圖示之Y軸方向進給機構,可將例如和保持機構30一起移動之磨石剩餘量檢測機構36定位到磨削機構4的磨削磨石440的下表面正下方。
然後,在由控制機構9所進行的控制之下,磨削進給機構2會使已定位到事先所掌握的高度位置之磨削機構4以預定的速度逐漸下降。又,已開始下降之磨削機構4的高度位置,可藉由控制機構9來隨時掌握。The remaining amount of the grinding
例如,如圖6所示,藉由下降之磨削機構4的磨削磨石440的下表面接觸於被接觸升降部365的上表面而使被接觸升降部365開始下降,透射型的光感測器的受光部363會檢測到測定光的減少。從磨石剩餘量檢測機構36將檢測訊號發送至控制機構9,而在由控制機構9所進行的控制之下,停止由磨削進給機構2所進行之磨削機構4的往-Z方向的磨削進給。此外,控制機構9會記憶磨削磨石440的下表面接觸於被接觸升降部365的上表面之時間點中的磨削機構4的高度位置。該高度位置為例如圖6所示之高度位置Z4。For example, as shown in FIG. 6, when the lower surface of the grinding
接著,如圖7所示,藉由未圖示之Y軸方向進給機構,將磨石剩餘量檢測機構36定位到磨削機構4的輪基台441的下表面正下方。
然後,在由控制機構9所進行的控制之下,磨削進給機構2會使已定位到事先所掌握的高度位置之磨削機構4以預定的速度逐漸下降。Next, as shown in FIG. 7, the grindstone remaining
例如,如圖7所示,下降之磨削機構4的輪基台441的下表面接觸於被接觸升降部365的上表面,而使光感測器的受光部363檢測測定光的減少。從磨石剩餘量檢測機構36將檢測訊號發送到控制機構9,而在由控制機構9所進行的控制之下,停止磨削機構4的往-Z方向的磨削進給。此外,控制機構9會辨識輪基台441的下表面接觸於被接觸升降部365的上表面的時間點中的磨削機構4的高度位置Z5。For example, as shown in FIG. 7, the lower surface of the
已組入圖1所示之控制機構9的剩餘量辨識部92,是將從圖7所示的高度位置Z4減去高度位置Z5後的值辨識為磨削磨石440的剩餘量。例如,成為[高度位置Z4]-[高度位置Z5]=磨削磨石440的剩餘量Ld。The remaining
磨削裝置1具備有圖1所示的判斷通知部99。判斷通知部99在本實施形態中是被組入控制機構9。
判斷通知部99會在加工開始前計算從藉由剩餘量辨識部92所辨識出的磨削磨石440的剩餘量Ld扣除掉如先前所說明地藉由累積消耗量計算部96所計算出的累積消耗量L9後的值L10。The grinding device 1 is provided with a
此外,判斷通知部99會判斷所計算出的值L10是否成為磨石剩餘量容許值(例如0μm)以下、或是超過磨石剩餘量容許值。
例如,值L10已成為0μm以下。在此情況下,是判斷為磨削磨石440會在第1片匣150a內的全部25片的晶圓W的磨削完成前耗盡,可在觸控面板16顯示該判斷、或由未圖示之揚聲器通報該判斷,而向作業人員通知該判斷。在此情況下,已辨識到該判斷之作業人員在開始晶圓W的磨削加工前,會將已裝設於磨削機構4的磨削磨石440的剩餘量為剩餘量Ld的磨削輪44,更換為新的磨削輪44。
再者,亦可設為:在將磨削磨石440的磨石剩餘量容許值預先設為例如數μm,並在加工開始前,從藉由剩餘量辨識部92所辨識出的磨削磨石440的剩餘量Ld扣除掉如先前所說明地藉由累積消耗量計算部96所計算出的累積消耗量L9後的值L10已成為磨石剩餘量容許值以下的情況下,判斷通知部99會向作業人員通知以下之通知:目前所裝設在磨削機構4之磨削輪44並不適用於將25片晶圓W全部磨削。In addition, the
再者,在例如值L10超過磨石剩餘量容許值(例如0μm)的情況下,會判斷為類型1的磨削磨石440不會在圖1所示之第1片匣150a內的全部25片晶圓W的磨削完成之前耗盡,且在如本實施形態地在例如全自動的磨削裝置1中,會為了開始晶圓W的磨削加工,而藉由機器人155從第1片匣150a搬出一片晶圓W。
再者,磨石剩餘量容許值可設定包含0的整數。Furthermore, for example, when the value L10 exceeds the allowable value of the remaining amount of the grindstone (for example, 0μm), it is determined that the grinding
在例如將磨削輪44更換為新的磨削輪後,開始圖1所示的晶圓W的磨削的情況下,是讓保持機構30移動到裝載臂154a的附近。又,機器人155從第1片匣150a拉出一片晶圓W,並使晶圓W移動至暫置區域152。For example, when the grinding
在暫置區域152上藉由對位機構153來對晶圓W進行對中(centering)後,裝載臂154a會將已進行對中的晶圓W搬送至保持機構30上。然後,作動未圖示之吸引源,讓保持機構30將晶圓W以背面Wb朝上方露出的狀態來吸引保持在保持面30a上。After the wafer W is centered on the
接著,將保持有晶圓W之圖1所示的保持機構30往+Y方向移動至磨削機構4的下方。藉由磨削進給機構2將磨削機構4往-Z方向以磨削進給速度V1進給,且伴隨於旋轉軸40的旋轉而旋轉之磨削輪44的類型1的磨削磨石440抵接於晶圓W的背面Wb來進行磨削。在磨削中,由於伴隨於保持機構30的旋轉,已保持於保持面30a上的晶圓W也會旋轉,因此磨削輪44可進行晶圓W的背面Wb的整個面的磨削加工。又,可隨著對磨削磨石與晶圓W的接觸部位供給磨削水來將接觸部位冷卻,而將在接觸部位產生的磨削屑洗淨去除。Next, the holding
將晶圓W磨削至成為所期望的厚度(例如厚度100μm)後,藉由磨削進給機構2使磨削機構4上升而使其從晶圓W離開,並進一步使保持機構30朝-Y方向移動而定位到卸載臂154b的附近。接著,將已藉由卸載臂154b吸引保持背面Wb的晶圓W搬送至洗淨機構156。藉由洗淨機構156將晶圓W的背面Wb旋轉洗淨,並進一步乾燥後,藉由機器人155搬入第2片匣151a。After the wafer W is ground to a desired thickness (for example, a thickness of 100 μm), the grinding
對於已收納在第1片匣150a的25片晶圓W,依序施行如上述之磨削加工,來完成對第1片匣150a內的全部的晶圓W的磨削加工。The 25 wafers W stored in the
如上述,本發明之磨削裝置1由於具備:加工條件設定部91,設定為了使用磨削磨石440來磨削晶圓W而至少包含磨削磨石440的類型與磨削進給機構2的進給速度之加工條件;消耗量資料93,表示以所設定之加工條件來磨削一片晶圓W時的磨削磨石440的消耗量;晶圓片數設定部95,設定已收納於第1片匣150a之晶圓W的片數;累積消耗量計算部96,參照消耗量資料93,並藉由公式來計算將已收納於第1片匣150a之晶圓W全部磨削時的磨削磨石440的累積消耗量,其中前述公式是:每一片晶圓W的磨削磨石440的消耗量×已設定於晶圓片數設定部95之晶圓W的片數;剩餘量辨識部92,辨識磨削磨石440的剩餘量;及判斷通知部99,在加工開始前,若從藉由剩餘量辨識部92所辨識出的磨削磨石440的剩餘量扣除掉藉由累積消耗量計算部96所計算出的累積消耗量後的值已成為磨石剩餘量容許值以下時,即判斷為磨削磨石440會在完成第1片匣150a內的全部的晶圓W的磨削前耗盡,並進行通知,藉此,可在開始磨削加工之前向作業人員通知將會有必須在完成已收納於第1片匣150a的全部的晶圓W的磨削加工前更換磨削磨石440之情形,因此在出現有通知的情況下,作業人員可以在磨削加工前將磨削磨石440更換成可磨削第1片匣150a內的全部的晶圓W的新的磨削磨石440,並於之後實施磨削加工,所以可以將所加工之複數個晶圓W的包含厚度等之加工結果形成得較均一。As described above, the grinding device 1 of the present invention is provided with the processing
再者,本發明之磨削裝置1並非限定於上述實施形態之裝置,又,關於附加圖式所圖示的各構成等,亦不限定於此,能夠在可以發揮本發明之效果的範圍內作適當變更。In addition, the grinding device 1 of the present invention is not limited to the device of the above-mentioned embodiment, and the various configurations shown in the attached drawings are not limited to this, and can be within the range where the effects of the present invention can be exhibited. Make appropriate changes.
例如,以所設定之加工條件來磨削一片晶圓W時的磨削磨石440的消耗量的計算,並非限定於如先前說明地計算的例子,亦可例如藉由磨石剩餘量檢測機構36與剩餘量辨識部92,來測定磨削一片晶圓W前的磨削磨石440的磨石剩餘量,並進一步測定磨削一片晶圓W後的磨削磨石440的磨石剩餘量,且計算磨削前後的磨石剩餘量之差來求出該消耗量。For example, the calculation of the consumption of the grinding
例如,在本實施形態中,雖然是在和過去進行晶圓W之磨削加工時的加工條件相同的加工條件下進行晶圓W的磨削加工,但在以過去未曾進行的加工條件來對晶圓W施行磨削加工的情況下,是使用晶圓W或假晶圓,並在磨削加工開始前將新的加工條件設定到加工條件設定部91來進行加工實驗,並使已獲得其結果的消耗量資料重新記憶於控制機構9。For example, in the present embodiment, although the grinding process of the wafer W is performed under the same processing conditions as in the past when the grinding process of the wafer W is performed, the processing conditions have not been performed in the past. When the wafer W is subjected to grinding processing, the wafer W or dummy wafer is used, and the new processing conditions are set to the processing
1:磨削裝置 10:基座 12:支柱 150:第1片匣載台 150a:第1片匣 151:第2片匣載台 151a:第2片匣 152:暫置區域 153:對位機構 154a:裝載臂 154b:卸載臂 155:機器人 156:洗淨機構 16:觸控面板 2:磨削進給機構 20:滾珠螺桿 21:導軌 22:馬達 23:升降板 24:保持器 30:保持機構 30a:保持面 35:磨石剩餘量檢測機構 350:投光部 351:受光部 36:磨石剩餘量檢測機構 360:罩殼 362:投光部 363:受光部 364:彈性構件 365:被接觸升降部 38:厚度測定機構 381:第1厚度測定器 382:第2厚度測定器 39:罩蓋 39a:蛇腹蓋 4:磨削機構 40:旋轉軸 41:殼體 42:馬達 43:安裝座 44:磨削輪 440:磨削磨石 441:輪基台 9:控制機構 91:加工條件設定部 92:剩餘量辨識部 93:消耗量資料 95:晶圓片數設定部 96:累積消耗量計算部 99:判斷通知部 A:搬入搬出區域 B:加工區域 L1,L2:消耗量 L9:累積消耗量 L10:值 La,Lc:距離 Ld:剩餘量 W:晶圓 Wa:正面 Wb:背面 Z0,Z1,Z2,Z3,Z4,Z5:高度位置 X,+X,-X,+Y,-Y,+Z,-Z:方向1: Grinding device 10: Pedestal 12: Pillar 150: The first cassette stage 150a: The first cassette 151: 2nd cassette stage 151a: second cassette 152: Temporary Area 153: Counterpoint 154a: Loading arm 154b: Unloading arm 155: Robot 156: Washing mechanism 16: touch panel 2: Grinding feed mechanism 20: Ball screw 21: Rail 22: Motor 23: Lifting board 24: retainer 30: Keep the organization 30a: Keep the face 35: grindstone remaining quantity detection mechanism 350: Projection Department 351: Light Receiving Department 36: grindstone remaining quantity detection mechanism 360: cover 362: Projection Department 363: Light Receiving Department 364: Elastic member 365: contacted lifting part 38: Thickness measuring mechanism 381: The first thickness measuring device 382: The second thickness measuring device 39: cover 39a: Snake belly cover 4: Grinding mechanism 40: Rotation axis 41: Shell 42: Motor 43: Mounting seat 44: Grinding wheel 440: Grinding Stone 441: Wheel Abutment 9: Control mechanism 91: Processing condition setting section 92: Remaining amount recognition section 93: Consumption data 95: Wafer number setting section 96: Cumulative consumption calculation department 99: Judgment Notification Department A: Moving in and out of the area B: Processing area L1, L2: consumption L9: Cumulative consumption L10: value La,Lc: distance Ld: remaining amount W: Wafer Wa: front Wb: back Z0, Z1, Z2, Z3, Z4, Z5: height position X,+X,-X,+Y,-Y,+Z,-Z: direction
圖1是顯示磨削裝置之一例的立體圖。 圖2是說明將第一片晶圓磨削到成品厚度為止之情況的截面圖。 圖3是說明磨削第二片晶圓而得到消耗量資料的情況之磨削磨石的消耗量的截面圖。 圖4是說明為了藉由剩餘量辨識部來辨識磨削磨石的剩餘量,而從非接觸式的磨石剩餘量檢測機構朝磨削磨石的下表面照射測定光之狀態的截面圖。 圖5是說明為了藉由剩餘量辨識部來辨識磨削磨石的剩餘量,而從非接觸式的磨石剩餘量檢測機構朝輪基台的下表面照射測定光之狀態的截面圖。 圖6是說明為了藉由剩餘量辨識部來辨識磨削磨石的剩餘量,而使磨削磨石的下表面接觸於接觸式的磨石剩餘量檢測機構之狀態的截面圖。 圖7是說明為了藉由剩餘量辨識部辨識磨削磨石的剩餘量,而使輪基台的下表面接觸於接觸式的磨石剩餘量檢測機構之狀態的截面圖。Fig. 1 is a perspective view showing an example of a grinding device. Fig. 2 is a cross-sectional view explaining how the first wafer is ground to the thickness of the finished product. 3 is a cross-sectional view illustrating the consumption of the grinding grindstone when the consumption data is obtained by grinding the second wafer. 4 is a cross-sectional view illustrating a state in which measurement light is irradiated from a non-contact type remaining amount detecting mechanism of the grinding stone to the lower surface of the grinding stone in order to recognize the remaining amount of the grinding stone by the remaining amount recognition unit. 5 is a cross-sectional view illustrating a state in which measurement light is irradiated from a non-contact type remaining amount detecting mechanism of the grindstone to the lower surface of the wheel base in order to recognize the remaining amount of the grinding stone by the remaining amount recognition unit. 6 is a cross-sectional view illustrating a state where the lower surface of the grinding stone is brought into contact with a contact type remaining amount detecting mechanism of the grinding stone in order to recognize the remaining amount of the grinding stone by the remaining amount recognition unit. Fig. 7 is a cross-sectional view illustrating a state where the lower surface of the wheel base is in contact with a contact-type grindstone remaining amount detecting mechanism in order to recognize the remaining amount of the grinding stone by the remaining amount recognition unit.
1:磨削裝置1: Grinding device
10:基座10: Pedestal
12:支柱12: Pillar
150:第1片匣載台150: The first cassette stage
150a:第1片匣150a: The first cassette
151:第2片匣載台151: 2nd cassette stage
151a:第2片匣151a: second cassette
152:暫置區域152: Temporary Area
153:對位機構153: Counterpoint
154a:裝載臂154a: Loading arm
154b:卸載臂154b: Unloading arm
155:機器人155: Robot
156:洗淨機構156: Washing mechanism
16:觸控面板16: touch panel
2:磨削進給機構2: Grinding feed mechanism
20:滾珠螺桿20: Ball screw
21:導軌21: Rail
22:馬達22: Motor
23:升降板23: Lifting board
24:保持器24: retainer
30:保持機構30: Keep the organization
30a:保持面30a: Keep the face
35:磨石剩餘量檢測機構35: grindstone remaining quantity detection mechanism
350:投光部350: Projection Department
351:受光部351: Light Receiving Department
38:厚度測定機構38: Thickness measuring mechanism
381:第1厚度測定器381: The first thickness measuring device
382:第2厚度測定器382: The second thickness measuring device
39:罩蓋39: cover
39a:蛇腹蓋39a: Snake belly cover
4:磨削機構4: Grinding mechanism
40:旋轉軸40: Rotation axis
41:殼體41: Shell
42:馬達42: Motor
43:安裝座43: Mounting seat
44:磨削輪44: Grinding wheel
440:磨削磨石440: Grinding Stone
441:輪基台441: Wheel Abutment
9:控制機構9: Control mechanism
91:加工條件設定部91: Processing condition setting section
92:剩餘量辨識部92: Remaining amount recognition section
93:消耗量資料93: Consumption data
95:晶圓片數設定部95: Wafer number setting section
96:累積消耗量計算部96: Cumulative consumption calculation department
99:判斷通知部99: Judgment Notification Department
A:搬入搬出區域A: Moving in and out of the area
B:加工區域B: Processing area
W:晶圓W: Wafer
Wa:正面Wa: front
Wb:背面Wb: back
+X,-X,+Y,-Y,+Z,-Z:方向+X, -X, +Y, -Y, +Z, -Z: direction
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JP2003311615A (en) | 2002-04-25 | 2003-11-05 | Disco Abrasive Syst Ltd | Polishing device |
JP2006021264A (en) * | 2004-07-07 | 2006-01-26 | Disco Abrasive Syst Ltd | Grinding apparatus |
JP5025200B2 (en) * | 2006-09-19 | 2012-09-12 | 株式会社ディスコ | Thickness measurement method during grinding |
JP2012135853A (en) * | 2010-12-28 | 2012-07-19 | Disco Corp | Grinding device |
JP2015036170A (en) | 2013-08-13 | 2015-02-23 | 株式会社ディスコ | Grinding device |
JP2015056510A (en) * | 2013-09-12 | 2015-03-23 | 株式会社ディスコ | Processing method of device wafer |
JP6618822B2 (en) * | 2016-02-08 | 2019-12-11 | 株式会社ディスコ | Method for detecting wear amount of grinding wheel |
JP6637831B2 (en) * | 2016-04-28 | 2020-01-29 | 株式会社ディスコ | Device manufacturing method and grinding device |
JP6754272B2 (en) * | 2016-10-24 | 2020-09-09 | 株式会社ディスコ | Grinding device |
JP6807254B2 (en) | 2017-03-08 | 2021-01-06 | 株式会社ディスコ | Grinding device |
JP2019018326A (en) * | 2017-07-21 | 2019-02-07 | 株式会社ディスコ | Grinding device |
JP7015139B2 (en) * | 2017-10-18 | 2022-02-02 | 株式会社ディスコ | Grinding method and grinding equipment for workpieces |
JP7002287B2 (en) * | 2017-11-01 | 2022-01-20 | 株式会社ディスコ | Wafer for dressing and dressing method |
JP7009194B2 (en) * | 2017-12-12 | 2022-01-25 | 株式会社ディスコ | Wafer generator and transport tray |
JP7089136B2 (en) * | 2018-03-22 | 2022-06-22 | 株式会社デンソー | Wafer grinding method |
JP2019192683A (en) * | 2018-04-19 | 2019-10-31 | 株式会社ディスコ | Transfer mechanism |
-
2019
- 2019-12-10 JP JP2019222863A patent/JP7412996B2/en active Active
-
2020
- 2020-11-17 KR KR1020200153278A patent/KR20210073452A/en not_active Application Discontinuation
- 2020-12-03 CN CN202011396397.2A patent/CN113043156B/en active Active
- 2020-12-03 TW TW109142697A patent/TWI838595B/en active
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CN113043156A (en) | 2021-06-29 |
JP2021091035A (en) | 2021-06-17 |
KR20210073452A (en) | 2021-06-18 |
JP7412996B2 (en) | 2024-01-15 |
TWI838595B (en) | 2024-04-11 |
CN113043156B (en) | 2024-03-12 |
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