JP7102934B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7102934B2 JP7102934B2 JP2018098071A JP2018098071A JP7102934B2 JP 7102934 B2 JP7102934 B2 JP 7102934B2 JP 2018098071 A JP2018098071 A JP 2018098071A JP 2018098071 A JP2018098071 A JP 2018098071A JP 7102934 B2 JP7102934 B2 JP 7102934B2
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- 239000004065 semiconductor Substances 0.000 title claims description 53
- 239000010410 layer Substances 0.000 claims description 133
- 238000000926 separation method Methods 0.000 claims description 48
- 239000002344 surface layer Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 14
- 230000005684 electric field Effects 0.000 description 24
- 239000011229 interlayer Substances 0.000 description 23
- 230000000694 effects Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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- Insulated Gate Type Field-Effect Transistor (AREA)
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Description
そして、第1導電型は、p型とされ、第2導電型は、n型とされており、ボディ層は、トレンチ分離部に接するように形成されている。
なお、各構成要素等に付された括弧付きの参照符号は、その構成要素等と後述する実施形態に記載の具体的な構成要素等との対応関係の一例を示すものである。
第1実施形態について、図面を参照しつつ説明する。本実施形態では、pチャネル型のLDMOSが形成された半導体装置について説明する。
第2実施形態について説明する。本実施形態は、第1実施形態に対し、配線層50の上方に引回し配線層90を配置したものである。その他に関しては、第1実施形態と同様であるため、ここでは説明を省略する。
第3実施形態について説明する。本実施形態は、第1実施形態に対し、第1~第3ソース用配線部81a~83aの形状を変更したものである。その他に関しては、第1実施形態と同様であるため、ここでは説明を省略する。
第4実施形態について説明する。本実施形態は、第1実施形態に対し、第1ソース用配線部81aを分離したものである。その他に関しては、第1実施形態と同様であるため、ここでは説明を省略する。
第5実施形態について説明する。本実施形態は、第1実施形態に対し、第1~第3ソース用配線部81a~83aが順に突出するようにしたものである。その他に関しては、第1実施形態と同様であるため、ここでは説明を省略する。
第6実施形態について説明する。本実施形態は、第1実施形態に対し、第1ドレイン用配線部81bの形状を変更したものである。その他に関しては、第1実施形態と同様であるため、ここでは説明を省略する。
第7実施形態について説明する。本実施形態は、第1実施形態に対し、nチャネル型のLDMOSを形成したものである。その他に関しては、第1実施形態と同様であるため、ここでは説明を省略する。
本発明は上記した実施形態に限定されるものではなく、特許請求の範囲に記載した範囲内において適宜変更が可能である。
10a 主面
13 活性層
13a 表面
14 素子領域
31 ボディ層
32 ソース領域
33 ドリフト領域
34 ドレイン領域
61a ゲート絶縁膜
62a ゲート電極
Claims (3)
- LDMOSが形成された半導体装置であって、
活性層(13)を有し、前記活性層にトレンチ分離部(20)によって素子領域(14)が区画形成され、主面(10a)が前記活性層の表面(13a)を有する構成とされている半導体基板(10)と、
前記素子領域における活性層の表層部に形成された第1導電型のボディ層(31)と、前記ボディ層の表層部に形成された第2導電型のソース領域(32)と、
前記素子領域における活性層の表層部に形成された第2導電型のドリフト層(33)と、
前記ドリフト層の表層部に形成された第2導電型のドレイン領域(34)と、
前記ボディ層の表面に配置されたゲート絶縁膜(61a)と、
前記ゲート絶縁膜上に配置されたゲート電極(62a)と、を備え、
前記ソース領域および前記ドレイン領域は、高電位となる一方の高電位領域が低電位となる他方の低電位領域に囲まれており、
前記第1導電型は、p型とされ、
前記第2導電型は、n型とされており、
前記ボディ層は、前記トレンチ分離部に接するように形成されている半導体装置。 - 前記半導体基板上には、下層絶縁膜(61)および下層配線部(62)と、上層絶縁膜(71~73)および上層配線部(81~83)とを有する配線層(50)が形成されており、
前記ゲート絶縁膜は、前記下層絶縁膜にて構成され、
前記ゲート電極は、前記下層配線部にて構成されており、
前記上層配線部は、前記ソース領域上に位置するソース用配線部(81a~83a)と、前記ドレイン領域上に位置するドレイン用配線部(81b~83b)と、を有し、
前記ドレイン用配線部および前記ソース用配線部は、前記高電位領域と接続される一方が高電位配線部とされ、前記低電位領域と接続される他方が低電位配線部とされており、
前記低電位配線部は、前記主面に対する法線方向から視たとき、前記高電位配線部を囲んでおり、
前記高電位配線部および前記低電位配線部は、前記高電位領域を通り、前記主面と交差する方向に延びる軸(A)から前記主面の一方向に沿った方向の長さ(L1a、L1b、L2a、L2b)において、前記高電位配線部の長さが前記低電位配線部の長さより長くされている請求項1に記載の半導体装置。 - 前記配線部上には、前記法線方向から視たとき、前記上層配線部と重複する部分を有する引回し配線部(92)を備えた引回し配線層(90)が配置されている請求項2に記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2018098071A JP7102934B2 (ja) | 2018-05-22 | 2018-05-22 | 半導体装置 |
PCT/JP2019/018570 WO2019225338A1 (ja) | 2018-05-22 | 2019-05-09 | 半導体装置 |
US16/952,446 US11710786B2 (en) | 2018-05-22 | 2020-11-19 | Semiconductor device |
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JP2018098071A JP7102934B2 (ja) | 2018-05-22 | 2018-05-22 | 半導体装置 |
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JP2019204853A JP2019204853A (ja) | 2019-11-28 |
JP7102934B2 true JP7102934B2 (ja) | 2022-07-20 |
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Citations (3)
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JP2009164460A (ja) | 2008-01-09 | 2009-07-23 | Renesas Technology Corp | 半導体装置 |
JP2015135950A (ja) | 2013-12-20 | 2015-07-27 | 株式会社デンソー | 半導体装置 |
JP2018046165A (ja) | 2016-09-14 | 2018-03-22 | 富士電機株式会社 | 半導体装置 |
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JP3802935B2 (ja) * | 1993-07-16 | 2006-08-02 | 三菱電機株式会社 | 高耐圧型半導体装置 |
JP3581447B2 (ja) | 1995-08-22 | 2004-10-27 | 三菱電機株式会社 | 高耐圧半導体装置 |
JP2943922B2 (ja) * | 1997-06-30 | 1999-08-30 | 松下電工株式会社 | 半導体リレー用出力接点素子 |
JP4292595B2 (ja) * | 1998-06-02 | 2009-07-08 | 株式会社デンソー | 半導体装置 |
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JP5458809B2 (ja) | 2009-11-02 | 2014-04-02 | 富士電機株式会社 | 半導体装置 |
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