JP7093693B2 - 熱処理装置及び基板滑り検出方法 - Google Patents

熱処理装置及び基板滑り検出方法 Download PDF

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Publication number
JP7093693B2
JP7093693B2 JP2018132992A JP2018132992A JP7093693B2 JP 7093693 B2 JP7093693 B2 JP 7093693B2 JP 2018132992 A JP2018132992 A JP 2018132992A JP 2018132992 A JP2018132992 A JP 2018132992A JP 7093693 B2 JP7093693 B2 JP 7093693B2
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Japan
Prior art keywords
substrate
hot plate
wafer
slip
temperature
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JP2018132992A
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Japanese (ja)
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JP2020013808A (ja
Inventor
優 溝部
和幸 岩男
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2018132992A priority Critical patent/JP7093693B2/ja
Priority to KR1020190078581A priority patent/KR20200007657A/ko
Priority to CN201910618989.5A priority patent/CN110718482B/zh
Publication of JP2020013808A publication Critical patent/JP2020013808A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Resistance Heating (AREA)
JP2018132992A 2018-07-13 2018-07-13 熱処理装置及び基板滑り検出方法 Active JP7093693B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018132992A JP7093693B2 (ja) 2018-07-13 2018-07-13 熱処理装置及び基板滑り検出方法
KR1020190078581A KR20200007657A (ko) 2018-07-13 2019-07-01 열처리 장치 및 기판 미끄럼 검출 방법
CN201910618989.5A CN110718482B (zh) 2018-07-13 2019-07-10 热处理装置和基片滑动检测方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018132992A JP7093693B2 (ja) 2018-07-13 2018-07-13 熱処理装置及び基板滑り検出方法

Publications (2)

Publication Number Publication Date
JP2020013808A JP2020013808A (ja) 2020-01-23
JP7093693B2 true JP7093693B2 (ja) 2022-06-30

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JP2018132992A Active JP7093693B2 (ja) 2018-07-13 2018-07-13 熱処理装置及び基板滑り検出方法

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JP (1) JP7093693B2 (zh)
KR (1) KR20200007657A (zh)
CN (1) CN110718482B (zh)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000306825A (ja) 1999-02-16 2000-11-02 Tokyo Electron Ltd 処理装置、処理システム、判別方法及び検出方法
JP2012151247A (ja) 2011-01-18 2012-08-09 Tokyo Electron Ltd 基板加熱装置、基板加熱方法及び記憶媒体
JP2018107175A (ja) 2016-12-22 2018-07-05 東京エレクトロン株式会社 熱処理装置、熱処理方法及びコンピュータ記憶媒体

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1197324A (ja) * 1997-09-18 1999-04-09 Dainippon Screen Mfg Co Ltd 基板熱処理装置
KR100593627B1 (ko) * 1999-02-16 2006-06-28 동경 엘렉트론 주식회사 처리장치, 처리시스템, 판별방법 및 검출방법
US7416632B2 (en) * 2001-09-03 2008-08-26 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
JP2005174986A (ja) * 2003-12-08 2005-06-30 Matsushita Electric Ind Co Ltd 急速熱処理装置、その製造方法及び温度調整方法
JP5542743B2 (ja) * 2010-10-07 2014-07-09 東京エレクトロン株式会社 熱処理装置および熱処理方法
JP5490741B2 (ja) * 2011-03-02 2014-05-14 東京エレクトロン株式会社 基板搬送装置の位置調整方法、及び基板処理装置
CN104538331B (zh) * 2014-12-12 2018-06-05 通富微电子股份有限公司 一种晶圆翘曲处理的装置及方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000306825A (ja) 1999-02-16 2000-11-02 Tokyo Electron Ltd 処理装置、処理システム、判別方法及び検出方法
JP2012151247A (ja) 2011-01-18 2012-08-09 Tokyo Electron Ltd 基板加熱装置、基板加熱方法及び記憶媒体
JP2018107175A (ja) 2016-12-22 2018-07-05 東京エレクトロン株式会社 熱処理装置、熱処理方法及びコンピュータ記憶媒体

Also Published As

Publication number Publication date
CN110718482B (zh) 2024-03-22
CN110718482A (zh) 2020-01-21
KR20200007657A (ko) 2020-01-22
JP2020013808A (ja) 2020-01-23

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