KR20200007657A - 열처리 장치 및 기판 미끄럼 검출 방법 - Google Patents

열처리 장치 및 기판 미끄럼 검출 방법 Download PDF

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Publication number
KR20200007657A
KR20200007657A KR1020190078581A KR20190078581A KR20200007657A KR 20200007657 A KR20200007657 A KR 20200007657A KR 1020190078581 A KR1020190078581 A KR 1020190078581A KR 20190078581 A KR20190078581 A KR 20190078581A KR 20200007657 A KR20200007657 A KR 20200007657A
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KR
South Korea
Prior art keywords
substrate
hot plate
wafer
temperature
unit
Prior art date
Application number
KR1020190078581A
Other languages
English (en)
Korean (ko)
Inventor
유타카 미조베
가즈유키 이와오
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20200007657A publication Critical patent/KR20200007657A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Resistance Heating (AREA)
KR1020190078581A 2018-07-13 2019-07-01 열처리 장치 및 기판 미끄럼 검출 방법 KR20200007657A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2018-132992 2018-07-13
JP2018132992A JP7093693B2 (ja) 2018-07-13 2018-07-13 熱処理装置及び基板滑り検出方法

Publications (1)

Publication Number Publication Date
KR20200007657A true KR20200007657A (ko) 2020-01-22

Family

ID=69170031

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190078581A KR20200007657A (ko) 2018-07-13 2019-07-01 열처리 장치 및 기판 미끄럼 검출 방법

Country Status (3)

Country Link
JP (1) JP7093693B2 (zh)
KR (1) KR20200007657A (zh)
CN (1) CN110718482B (zh)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012151247A (ja) 2011-01-18 2012-08-09 Tokyo Electron Ltd 基板加熱装置、基板加熱方法及び記憶媒体

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1197324A (ja) * 1997-09-18 1999-04-09 Dainippon Screen Mfg Co Ltd 基板熱処理装置
JP3577436B2 (ja) 1999-02-16 2004-10-13 東京エレクトロン株式会社 処理装置、処理システム、判別方法及び検出方法
US6654668B1 (en) * 1999-02-16 2003-11-25 Tokyo Electron Limited Processing apparatus, processing system, distinguishing method, and detecting method
KR100915645B1 (ko) * 2001-09-03 2009-09-04 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법
JP2005174986A (ja) * 2003-12-08 2005-06-30 Matsushita Electric Ind Co Ltd 急速熱処理装置、その製造方法及び温度調整方法
JP5542743B2 (ja) * 2010-10-07 2014-07-09 東京エレクトロン株式会社 熱処理装置および熱処理方法
JP5490741B2 (ja) * 2011-03-02 2014-05-14 東京エレクトロン株式会社 基板搬送装置の位置調整方法、及び基板処理装置
CN104538331B (zh) * 2014-12-12 2018-06-05 通富微电子股份有限公司 一种晶圆翘曲处理的装置及方法
JP6789096B2 (ja) 2016-12-22 2020-11-25 東京エレクトロン株式会社 熱処理装置、熱処理方法及びコンピュータ記憶媒体

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012151247A (ja) 2011-01-18 2012-08-09 Tokyo Electron Ltd 基板加熱装置、基板加熱方法及び記憶媒体

Also Published As

Publication number Publication date
JP7093693B2 (ja) 2022-06-30
JP2020013808A (ja) 2020-01-23
CN110718482B (zh) 2024-03-22
CN110718482A (zh) 2020-01-21

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