JP7090688B2 - 高強度耐熱繊維材料 - Google Patents
高強度耐熱繊維材料 Download PDFInfo
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- JP7090688B2 JP7090688B2 JP2020208878A JP2020208878A JP7090688B2 JP 7090688 B2 JP7090688 B2 JP 7090688B2 JP 2020208878 A JP2020208878 A JP 2020208878A JP 2020208878 A JP2020208878 A JP 2020208878A JP 7090688 B2 JP7090688 B2 JP 7090688B2
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/52—Constituents or additives characterised by their shapes
- C04B2235/5296—Constituents or additives characterised by their shapes with a defined aspect ratio, e.g. indicating sphericity
Description
産業用途の炭素繊維の作製は、(少なくとも)エジソン、ジョンW.スター、アレクサンダーロジギンの時代までさかのぼる。彼らは、竹および紙の繊維を炭化し、最初の白熱灯のフィラメントを形成した。バルク炭素繊維産業は、1866年のオハイオ州Clevelandにおけるナショナルカーボン社(NCC)の構築とともに創業され、この会社は、後にユニオンカーバイド社(UCC)に買収される。NCCは、特に、照明炭素の製造用の炭素、発電機およびモータ用の炭素ブラシ、ならびに炭素バッテリを製造した。1960年代初期、ユニオンカーバイド社は、前駆体としてレーヨンを使用して、最初の市販の炭素繊維を製造した。20世紀の後半、レーヨン、ポリアクリロニトリル(PAN)、およびピッチから、高強度炭素繊維を製造する、各種方策が見出された。これらのケースでは、炭素-ベアリング前駆体が、長いストランドに回転/引き出され、その後、安定化/酸化され、炭素化され、(必要に応じて)グラファイト化される。この方法では、密度に対して極めて高強度の繊維および繊維材料が形成されるものの、使用前駆体は、使用前に合成され、および/または純化されるため、比較的高価である。これは、今日の炭素繊維製造のコストが高騰する一因となっている。
Si-C-N系では、炭化ケイ素(SiC)、窒化ケイ素(Si3N4)、およびケイ素炭素窒化物繊維強化コンポジットがC-Cコンポジットに対する一つの候補材として提供され、これらは、耐酸化性、および高い強度対重量比(比強度)のため、多くの航空宇宙用途に期待されている。
炭素およびSi-C-N高温材料の別の代替例は、ホウ素-炭素-窒化物系の材料である。これは、例えば、B4C、BN、およびB-C-N材料の化合物を含む。これらの化合物における2つの極めて有望な材料は、ヘテロダイアモンドの形態のBCNおよび立方晶BNである。B-C-Nコーティングおよび粉末の合成に関して、精力的な研究開発が行われているものの、B-C-N系では、均質で均一な繊維を製造するプロセスはほとんど認められない。
今日まで、3000℃を超える融点を有するUHTM繊維強化材料は、実質的に存在しない。ある種の関連材料が市販されている。例えば、補強コンポジット用のホウ素コートタングステン繊維、および金属炭化物コートC繊維である。
(a)前記第1の元素は、ホウ素であり、前記第2の元素は、炭素であり、さらに、窒素、および任意で少なくとも一つの添加元素を有し、前記ホウ素の濃度は、95at%以下であり、前記炭素の濃度は、95at%以下であり、前記窒素の濃度は、67at%以下であり、存在する場合、前記少なくとも一つの添加元素の濃度は、35at%以下である。この状態では、繊維材料は、各種内部結晶構造を有することができる。これには、これに限られるものではないが、立方晶内部結晶構造、ヘテロダイヤモンド内部結晶構造、およびB4Cの菱面体晶状の内部結晶構造が含まれる;
(b)ホウ素の濃度は、20~30at%の間であり、炭素の濃度は、45~55at%の間であり、窒素の濃度は、20~30at%の間であり、少なくとも一つの添加元素の濃度は、15at%以下である;
(c)前記第1の元素は、ケイ素であり、前記第2の元素は、炭素であり、さらに窒素、および任意で少なくとも一つの添加元素を有し、ケイ素の濃度は、95at%以下であり、炭素の濃度は、95at%以下であり、窒素の濃度は、67at%以下であり、存在する場合、少なくとも一つの添加元素の濃度は、35at%以下である;
(d)前記第1の元素は、ケイ素であり、前記第2の元素は、炭素であり、さらに任意で少なくとも一つの添加元素を有し、ケイ素の濃度は、45~55at%の間であり、炭素の濃度は、45~55at%の間であり、存在する場合、少なくとも一つの添加元素の濃度は、10at%以下である;
(e)前記第1の元素は、ケイ素であり、前記第2の元素は、炭素であり、さらに任意で少なくとも一つの添加元素を有し、ケイ素の濃度は、22~43at%の間であり、炭素の濃度は、57~77at%の間であり、存在する場合、少なくとも一つの添加元素の濃度は、21at%以下である;
(f)前記第1の元素は、ケイ素であり、前記第2の元素は、窒素であり、さらに任意で少なくとも一つの添加元素を有し、ケイ素の濃度は、32~52at%の間であり、窒素の濃度は、47~67at%の間であり、存在する場合、少なくとも一つの添加元素の濃度は、21at%以下である;
(g)前記第1の元素は、ケイ素であり、前記第2の元素は、ホウ素であり、さらに任意で少なくとも一つの添加元素を有し、ケイ素の濃度は、7~33at%の間であり、ホウ素の濃度は、33~94at%の間であり、存在する場合、少なくとも一つの添加元素の濃度は、15at%以下である;
形態が含まれる。
(a)前記第1の元素は、タンタルであり、前記第2の元素は、ハフニウムであり、さらに、炭素、および任意で少なくとも一つの添加元素を有し、タンタルの濃度は、95at%以下であり、ハフニウムの濃度は、95at%以下であり、炭素の濃度は、5~67at%の間であり、存在する場合、前記少なくとも一つの添加元素の濃度は、35at%以下である;
(b)前記第1の元素は、タンタルであり、前記第2の元素は、ハフニウムであり、さらに炭素を有し、タンタルの濃度は、35~45at%の間であり、ハフニウムの濃度は、5~15at%の間であり、炭素の濃度は、45~55at%の間である;
(c)前記第1の元素は、ハフニウムであり、前記第2の元素は、炭素であり、さらに、窒素、および任意で少なくとも一つの添加元素を有し、ハフニウムの濃度は、95at%以下であり、炭素の濃度は、95at%以下であり、窒素の濃度は、5~67at%の間であり、存在する場合、前記少なくとも一つの添加元素の濃度は、35at%以下である;
形態が含まれる。
また本発明は、前述の熱拡散成長抑止(TDGS)効果を改善する方法に関する。急速な繊維材料の成長中に、しばしば、分解により相当量の副生成物が生じる。これらの副生成物は、繊維材料の先端、および反応ゾーンの中央に蓄積される。前駆体は、反応ゾーンの中央から移動する。この場合、新たに堆積される繊維材料が、一部の副生成物により、繊維材料軸の中心に沿ってエッチングされる可能性がある。炭素繊維堆積のLMM前駆体としてメタンを用い、HMM前駆体としてSF6を用いる化学反応の例を考える:
3CH4(ad)+2SF6(ad)→3C(s)+2S(ad)+12H(ad)+12F(ad)→3C(s)+2S(s,g)+12HF(g)
(注記:前述の中間状態は、一例に過ぎない。実際の反応は、より複雑であり、2以上の経路の可能性がある。)この反応では、炭素繊維が急速に成長し、その後突如減速し、完全にエッチング除去される。この初期の成長速度は、3~4mm/sのオーダーであり、(所与のCH4分圧の場合)これは、純粋なCH4に比べて、約1~2桁大きい。初期の成長の間、反応ゾーンの周囲に副生成物が構成され、その結果、繊維材料の成長速度の減速が生じる。濃度が十分に高まると、反応が反転し、繊維材料は、mm/sの速度でエッチング除去される。炭素繊維の温度は、処理中にわたり実質的に一定であることに留意する必要がある。しかしながら、初期の段階において反応が一時的に停止されても、その後直ぐに、成長が急速に再開される。これは、成長が停止している際には、熱拡散効果が一次的に消滅するため、副生成物/エッチャントが分散されることを意味する。繊維先端の自由水素、フッ素、およびフッ酸は、エッチャントとなる傾向があり、除去する必要がある。
前述のように、簡単のため、米国特許出願第14/827,752号に記載されている開示の多くは、ここでは示さない。ただし、これらは、これに限られるものではないが、機能的に形状化され設計された短繊維およびミクロ構造材料に関するこれらの態様を含む、本発明とともに利用できる。
前述のように、簡単のため、米国特許出願第14/827,752号に記載されている開示の多くは、ここでは示さない。ただし、これらは、これに限られるものではないが、変調繊維または繊維材料、ミクロ構造、織物に情報を記録すること、ならびにこれを読み取る装置に関するこれらの態様を含む、本発明とともに利用できる。
本発明のある態様では、新たな種類のドープ化炭素繊維材料、炭素合金繊維材料、および炭素混合繊維材料、これを製造する方法、ならびに多くの繊維を同時に合成し、この材料の繊維形態を製造する方法が提供される。
CH4(g)+CBr4(g)→2C(s)+4HBr(g) [反応A]
HBr副生成物は、CH4よりも大きな質量を有するため、SBP種は、熱拡散効果により、LMM前駆体よりも大きく移動される。適切に設計された二次加熱手段の追加により、この成長ゾーンからのSBP種の除去が助長される。
CH4(g)+4HBr(g)→CBr4(g)+4H2 [反応B]
従って、ある想定される実施例では、繊維先端において、反応Aが高温で進み、炭素が生成され、その後、チャンバの残りに(またはワイヤに沿った別の位置に)HBrが分散される。その後、低温で反応Bが進み、臭素がCBr4前駆体に戻る。従って、高価な前駆体であるCBr4を一度チャンバに追加することしか必要ではない。ただし、CH4(例えば天然ガスの形態)を、一次および二次加熱手段を介したエネルギーとともに、連続的に添加しても良い。臭素は、チャンバ内で連続的にリサイクルされるため、システムからの無駄になる生成物は、ほとんどまたは僅かしか存在しない。
LMM種のみを単独で用いて生じる熱の流れに比べて、前記反応ゾーンからの熱の流れを抑制するステップと、を有する。この特定の方法において、一部の態様は、任意であることに留意する必要がある。
(a)少なくとも一つの直鎖または分岐されたアルカンを有するアルカン種:例えば、CH4、C2H6、C3H8、C4H10、C5H12、C6H14、C7H16、C8H18、C9H20、C10H22、C11H24、C12H26、C13H28、C14H30、C15H32、C16H34、C17H36、C18H38、C19H40、C20H42、C21H44、C22H46、C23H48、C24H50、C25H52、C26H54、C27H56、C28H58、C29H60、C30H62、C31H64、C32H66、C33H68、C34H70、C35H72、C36H74、C37H76、C38H78、C39H80、C40H82、C41H84、C42H86、C43H88、C44H90、C45H92、C46H94、C47H96、C48H98、C49H100、C50Hl02、C51H104、C52H106、C53H108、C54H110、C55H112、C56H114、C57H116、C58H118、C59H120、C60H122、C61H124、C62H126、C63H128、C64H130、C65H132、C66H134、C67H136、C68H138、C69H140、C70H142、C71H144、C72H146、C73H148、C74H150、C75H152、C76H154、C77H156、C78H158、C79H160、C80H162、C81H164、C82H166、C83H168、C84H170、C85H172、C86H174、C87H176、C88H178、C89H180、C90H182、C91H184、C92H186、C93H188、C94H190、C95H192、C96H194、C97H196、C98H198、C99H200、C100H202、C101H204、C102H206、C103H208、C104H210、C105H212、C106H214、C107H216、C108H218、C109H220、C110H222、C111H224、C112H226、C113H228、C114H230、C115H232、C116H234、C117H236、C118H238、C119H240、C120H242;
(b)少なくとも一つの直鎖または分岐されたアルケンを有するアルケン種:例えば、C2H4、C3H6、C4H8、C5H10、C6H12、C7H14、C8H16、C9H18、C10H20、C11H22、C12H24、C13H26、C14H28、C15H30、C16H32、C17H34、C18H36、C19H38、C20H40、C21H42、C22H44、C23H46、C24H48、C25H50、C26H52、C27H54、C28H56、C29H58、C30H60、C31H62、C32H64、C33H66、C34H68、C35H70、C36H72、C37H74、C38H76、C39H78、C40H80、C41H82、C42H84、C43H86、C44H88、C45H90、C46H92、C47H94、C48H96、C49H98、C50H100、C51H102、C52H104、C53Hl06、C54H108、C55H110、C56H112、C57H114、C58H116、C59H118、C60H120、C61H122、C62H124、C63H126、C64H128、C65H130、C66H132、C67H134、C68H136、C69H138、C70H140、C71H142、C72H144、C73H146、C74H148、C75H150、C76H152、C77H154、C78H156、C79H158、C80H160、C81H162、C82H164、C83H166、C84H168、C85H170、C86H172、C87H174、C88H176、C89H178、C90H180、C91H182、C92H184、C93H186、C94H188、C95H190、C96H192、C97H194、C98H196、C99H198、C100H200、C101H202、C102H204、C103H206、C104H208、C105H210、C106H212、C107H214、C108H216、C109H218、C110H220、C111H222、C112H224、C113H226、C114H228、C115H230、C116H232、C117H234、C118H236、C119H238、C120H240;
(c)少なくとも一つの直鎖または分岐されたアルキンを有するアルキン種:例えば、C2H2、C3H4、C4H6、C5H8、C6H10、C7H12、C8H14、C9H16、C10H18、C11H20、C12H22、C13H24、C14H26、C15H28、C16H30、C17H32、C18H34、C19H36、C20H38、C21H40、C22H42、C23H44、C24H46、C25H48、C26H50、C27H52、C28H54、C29H56、C30H58、C31H60、C32H62、C33H64、C34H66、C35H68、C36H70、C37H72、C38H74、C39H76、C40H78、C41H80、C42H82、C43H84、C44H86、C45H88、C46H90、C47H92、C48H94、C49H96、C50H98、C51H100、C52H102、C53H104、C54H106、C55H108、C56H110、C57H112、C58H114、C59H116、C60H118、C61H120、C62H122、C63H124、C64H126、C65H128、C66H130、C67H132、C68H134、C69H136、C70H138、C71H140、C72H142、C73H144、C74H146、C75H148、C76H150、C77H152、C78H154、C79H156、C80H158、C81H160、C82H162、C83H164、C84H166、C85H168、C86H170、C87H172、C88H174、C89H176、C90H178、C91H180、C92H182、C93H184、C94H186、C95H188、C96H190、C97H192、C98H194、C99H196、C100H198、C101H200、C102H202、C103H204、C104H206、C105H208、C106H210、C107H212、C108H214、C109H216、C110H218、C111H220、C112H222、C113H224、C114H226、C115H228、C116H230、C117H232、C118H234、C119H236、C120H238:
(d)シクロアルカン:例えば、C3H6、C4H8、C5H10、C6H12、C7H14、C8H16、C9H18、C10H20、C11H22、C12H24、C13H26、C14H28、C15H30、C16H32、C17H34、C18H36、C19H38、C20H40、C21H42、C22H44、C23H46、C24H48、C25H50、C26H52、C27H54、C28H56、C29H58、C30H60、C31H62、C32H64、C33H66、C34H68、C35H70、C36H72、C37H74、C38H76、C39H78、C40H80、C41H82、C42H84、C43H86、C44H88、C45H90、C46H92、C47H94、C48H96、C49H98、C50H100、C51H102、C52H104、C53H106、C54H108、C55H110、C56H112、C57H114、C58H116、C59H118、C60H120、C61H122、C62H124、C63H126、C64H128、C65H130、C66H132、C67H134、C68H136、C69H138、C70H140、C71H142、C72H144、C73H146、C74H148、C75H150、C76H152、C77H154、C78H156、C79H158、C80H160、C81H162、C82H164、C83H166、C84H168、C85H170、C86H172、C87H174、C88H176、C89H178、C90H180、C91H182、C92H184、C93H186、C94H188、C95H190、C96H192、C97H194、C98H196、C99H198、C100H200、C101H202、C102H204、C103H206、C104H208、C105H210、C106H212、C107H214、C108H216、C109H218、C110H220、C111H222、C112H224、C113H226、C114H228、C115H230、C116H232、C117H234、C118H236、C119H238、C120H240、C6H10、C7H12、C8H14、C9H16、C10H18、C11H20、C12H22、C13H24、C14H26、C15H28、C16H30、C17H32、C18H34、C19H36、C20H38、C21H40、C22H42、C23H44、C24H46、C25H48、C26H50、C27H52、C28H54、C29H56、C30H58、C31H60、C32H62、C33H64、C34H66、C35H68、C36H70、C37H72、C38H74、C39H76、C40H78、C41H80、C42H82、C43H84、C44H86、C45H88、C46H90、C47H92、C48H94、C49H96、C50H98、C51H100、C52H102、C53H104、C54H106、C55H108、C56H110、C57H112、C58H114、C59H116、C60H118、C61H120、C62H122、C63H124、C64H126、C65H128、C66H130、C67H132、C68H134、C69H136、C70H138、C71H140、C72H142、C73H144、C74H146、C75H148、C76H150、C77H152、C78H154、C79H156、C80H158、C81H160、C82H162、C83H164、C84H166、C85H168、C86H170、C87H172、C88H174、C89H176、C90H178、C91H180、C92H182、C93H184、C94H186、C95H188、C96H190、C97H192、C98H194、C99H196、C100H198、C101H200、C102H202、C103H204、C104H206、C105H208、C106H210、C107H212、C108H214、C109H216、C110H218、C111H220、C112H222、C113H224、C114H226、C115H228、C116H230、C117H232、C118H234、C119H236、C120H238:
(e)環状/芳香族炭化水素または多環式芳香族炭化水素:例えば、ベンゼン(C6H6)、トルエン(C7H8)、キシレン(C8H10)、インダン(C9H10)、ナフタレン(C10H8)、テトラリン(C10H16)、メチルナフタレン(C11H10)、アズレン(C10H8)、アントラセン(C14H10)、ピレン(C16H10):
および(f)ダイヤモンドイド/アダマンタン-ベアリング種:例えばアダマンタン(C10H16)、アイサン(C12H18)、BC-8(C14H18)、ジアマンタン(C14H20)、トリアマンタン(C18H24)、テトラマンタン(C22H28)、ペンタマンタン(C26H32)、シクロヘキサマンタン(C26H30)、C30H34、C30H36、C34H40、C38H44、C42H48、C46H52、C50H56、C54H60、C58H64、C62H68、C66H72、C70H76、C74H80、C78H84、C82H88、C86H92、C90H96、C94H100、C98H104、C102H108、C106H112、C110H116、C114H120、C118H124、C122H128。
出願人は、B-C-N-X系の各種繊維材料を成長させた。ここで、B=ホウ素、C=炭素、N=窒素、Xは、ドーパント/合金元素であり、ここでは「添加元素」とも称される。非ドープの微細粒ホウ素炭素窒化物(BCN)繊維または繊維材料の一例は、図19に示されている。この繊維材料および同様の繊維材料は、個々に1GPaを超える繊維引張強度を示す。
出願人は、Si-C-N系の各種繊維材料を成長させた。ここで、B=ホウ素、C=炭素、N=窒素、Xは、ドーパント/合金元素であり、ここでは「添加元素」とも称される。非ドープの微細粒ケイ素炭化物繊維の一例は、図20に示されている。この繊維材料および同様の繊維材料は、個々に最大4.3GPaの繊維引張強度を示す。
出願人は、Ta-Hf-C-N-X系の各種繊維材料を成長させた。ここで、Ta=タンタル、Hf=ハフニウム、C=炭素、N=窒素、Xは、ドーパント/合金元素であり、ここでは「添加元素」とも称される。非ドープの微細粒タンタル-ハフニウム-炭化物(Ta-Hf-C)繊維の一例は、図21に示されている。完全に緻密なTaC、HfC、およびTaxHfyCz繊維が認められている。組成は、中心でおおよそTa4HfC5(一例として図21参照)である。これらは、既知の最も高温の耐熱材料である。これらの材料は、微粒子繊維材料として、連続的に成長し、これらの元素の均一な固溶体を有する。繊維材料は、Ta-Hf-C系材料を超える、優れた強度、靭性、および高温安定性を示す。また出願人は、同様の方法で、様々な各種耐熱金属および化合物、例えば図11に示すタングステン繊維が堆積可能であることを示した。
Claims (23)
- 少なくとも第1の元素と第2の元素とを有する繊維材料の製造方法であって、
a.前記第1の元素は、ケイ素であり、
b.前記第2の元素は、炭素であり、
当該方法は、
(i)低モル質量前駆体種を反応容器内に導入するステップと、
(ii)高モル質量前駆体種を前記反応容器内に導入するステップであって、前記高モル質量前駆体種は、前記低モル質量前駆体種よりも少なくとも1.5倍大きなモル質量を有する、ステップと、
(iii)少なくとも一つの加熱手段の使用により、前記反応容器内に、局所的反応ゾーンを形成するステップであって、前記局所的反応ゾーンまたはその近傍に熱拡散領域が形成される、ステップと、
を有し、
前記少なくとも一つの加熱手段は、集束レーザビーム、イオン/原子ビーム、電子/粒子ビーム、電気放電、またはこれらの任意の組み合わせからなる群から選定され、
前記前駆体種の一方は、前記局所的反応ゾーンにおいて、気体、液体、臨界もしくは超臨界前駆体状態であり、
前記熱拡散領域は、少なくとも部分的に、前記低モル質量前駆体種を前記高モル質量前駆体種から分離し、前記局所的反応ゾーンに前記前駆体種の一方を濃縮し、
前記反応ゾーンにおいて、前記反応ゾーンで濃縮された前記一方の前駆体種は、分解され、前記反応ゾーンに固体繊維として堆積される、製造方法。 - さらに少なくとも一つの添加元素を有し、
前記ケイ素の濃度は、45から55 at%の間であり、前記炭素の濃度は、45から55
at%の間であり、前記少なくとも一つの添加元素の濃度は、10at%以下である、請求項1に記載の製造方法。 - 前記繊維材料は、内部構造を有し、
該内部構造は、アモルファス、またはグレインサイズが100nm未満のナノ結晶形態である、請求項2に記載の製造方法。 - 前記前駆体種の一つは、不活性である、請求項3に記載の製造方法。
- 前記低モル質量前駆体種および前記高モル質量前駆体種は、予備混合される、請求項4に記載の製造方法。
- 前記繊維材料のミクロ構造特性は、繊維断面にわたって実質的に均一である、請求項5に記載の製造方法。
- 前記ケイ素の濃度は、45から55
at%の間であり、前記炭素の濃度は、45から55
at%の間である、請求項1に記載の製造方法。 - 前記繊維材料は、内部構造を有し、
該内部構造は、アモルファス、またはグレインサイズが100nm未満のナノ結晶形態である、請求項7に記載の製造方法。 - 前記前駆体種の一つは、不活性である、請求項8に記載の製造方法。
- 前記低モル質量前駆体種および前記高モル質量前駆体種は、予備混合される、請求項9に記載の製造方法。
- 前記繊維材料のミクロ構造特性は、繊維断面にわたって実質的に均一である、請求項10に記載の製造方法。
- さらに、少なくとも一つの添加元素を有し、
前記ケイ素の濃度は、22から43 at%の間であり、前記炭素の濃度は、57から77
at%の間であり、前記少なくとも一つの添加元素の濃度は、21at%以下である、請求項1に記載の製造方法。 - 前記ケイ素の濃度は、22から43 at%の間であり、前記炭素の濃度は、57から77
at%の間である、請求項1に記載の製造方法。 - 少なくとも第1の元素と第2の元素とを有する繊維材料の製造方法であって、
a.前記第1の元素は、ケイ素であり、
b.前記第2の元素は、炭素であり、
当該方法は、
(i)低モル質量前駆体種を反応容器内に導入するステップと、
(ii)高モル質量前駆体種を前記反応容器内に導入するステップであって、前記高モル質量前駆体種は、前記低モル質量前駆体種よりも実質的に大きなモル質量を有する、ステップと、
(iii)少なくとも一つの加熱手段の使用により、前記反応容器内に、局所的反応ゾーンを形成するステップであって、前記局所的反応ゾーンまたはその近傍に熱拡散領域が形成される、ステップと、
を有し、
前記熱拡散領域および反応ゾーンの少なくとも一つは、前記加熱手段により、少なくとも部分的に形成され、
前記少なくとも一つの加熱手段は、集束レーザビーム、イオン/原子ビーム、電子/粒子ビーム、電気放電、またはこれらの任意の組み合わせからなる群から選定され、
前記熱拡散領域は、少なくとも部分的に、前記低モル質量前駆体種を前記高モル質量前駆体種から分離し、
前記高モル質量前駆体種は、前記低モル質量前駆体種よりも低い熱伝導率を有し、
前記反応ゾーンにおいて、前記反応ゾーンで濃縮された前記一方の前駆体種は、分解され、前記反応ゾーンに固体繊維として堆積される、製造方法。 - さらに、少なくとも一つの添加元素を有し、
前記ケイ素の濃度は、45から55 at%の間であり、前記炭素の濃度は、45から55
at%の間であり、前記少なくとも一つの添加元素の濃度は、10at%以下である、請求項14に記載の製造方法。 - 前記低モル質量前駆体種および前記高モル質量前駆体種を前記反応容器内に導入するステップは、以下:
a.前記低モル質量前駆体種および前記高モル質量前駆体種は、予備混合されること、
b.前記低モル質量前駆体種および前記高モル質量前駆体種は、別個の源から流れ、前記反応ゾーンに対して接線方向に誘導されること、および
c.前記低モル質量前駆体種および前記高モル質量前駆体種は、別個の源から流れ、相互に対して傾斜した状態で誘導されること、
の少なくとも一つを有する、請求項15に記載の製造方法。 - 前記前駆体の一つは、不活性である、請求項16に記載の製造方法。
- 前記繊維材料のミクロ構造特性は、繊維の断面方向にわたって実質的に均一である、請求項17に記載の製造方法。
- 前記繊維材料は、内部構造を有し、
該内部構造は、アモルファス、またはグレインサイズが100nm未満のナノ結晶形態である、請求項17に記載の製造方法。 - 前記ケイ素の濃度は、45から55at%の間であり、前記炭素の濃度は、45から55at%の間である、請求項14に記載の製造方法。
- 前記前駆体の一つは、不活性である、請求項20に記載の製造方法。
- 前記繊維材料のミクロ構造特性は、繊維の断面方向にわたって実質的に均一である、請求項21に記載の製造方法。
- 前記繊維材料は、内部構造を有し、
該内部構造は、アモルファス、またはグレインサイズが100nm未満のナノ結晶形態である、請求項21に記載の製造方法。
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Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10041745B2 (en) | 2010-05-04 | 2018-08-07 | Fractal Heatsink Technologies LLC | Fractal heat transfer device |
US10119059B2 (en) | 2011-04-11 | 2018-11-06 | Jun Cui | Thermoelastic cooling |
US10018385B2 (en) * | 2012-03-27 | 2018-07-10 | University Of Maryland, College Park | Solid-state heating or cooling systems, devices, and methods |
US10179948B2 (en) * | 2014-04-24 | 2019-01-15 | United Technologies Corporation | Method and system for controlling coating in non-line-of-sight locations |
US11499230B2 (en) | 2014-08-18 | 2022-11-15 | Dynetics, Inc. | Method and apparatus for fabricating fibers and microstructures from disparate molar mass precursors |
US10167555B2 (en) * | 2014-08-18 | 2019-01-01 | Dynetics, Inc. | Method and apparatus for fabricating fibers and microstructures from disparate molar mass precursors |
US10168501B2 (en) * | 2016-05-27 | 2019-01-01 | Nxgen Partners Ip, Llc | System and method for transmissions using eliptical core fibers |
US20180087157A1 (en) * | 2016-09-28 | 2018-03-29 | Free Form Fibers, Llc | Multi-composition fiber with refractory additive(s) and method of making |
US10876227B2 (en) | 2016-11-29 | 2020-12-29 | Free Form Fibers, Llc | Fiber with elemental additive(s) and method of making |
GB2553390B (en) * | 2017-03-15 | 2020-01-15 | Rolls Royce Power Eng Plc | Method of manufacture |
EP3655718A4 (en) | 2017-07-17 | 2021-03-17 | Alexander Poltorak | SYSTEM AND PROCESS FOR MULTI-FRACTAL HEAT SINK |
ES2911518T3 (es) * | 2017-09-08 | 2022-05-19 | Sze Spezial Elektronik Hagenuk Gmbh | Tela no tejida para el apantallamiento de las frecuencias de terahercios |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004510674A (ja) | 2000-09-29 | 2004-04-08 | グッドリッチ・コーポレイション | 炭化ホウ素をベースとしたセラミックマトリックス複合材料 |
JP2004176244A (ja) | 2002-11-11 | 2004-06-24 | Showa Denko Kk | 気相法炭素繊維、その製造方法及び用途 |
US20040207133A1 (en) | 2003-04-15 | 2004-10-21 | Brian Williams | Carbon-carbon reinforced melt infiltrated ceramic matrix composites |
US20060275537A1 (en) | 2005-06-02 | 2006-12-07 | The Regents Of The University Of California | Method and apparatus for field-emission high-pressure-discharge laser chemical vapor deposition of free-standing structures |
US20090061210A1 (en) | 2006-02-23 | 2009-03-05 | Picodeon Ltd Oy | Coating on a fiber substrate and a coated fiber product |
US20100055352A1 (en) | 2008-04-08 | 2010-03-04 | Los Alamos National Security, Llc | Method of fabrication of fibers, textiles and composite materials |
US20140306364A1 (en) | 2013-04-10 | 2014-10-16 | Ut-Battelle, Llc | Controlled chemical stabilization of polyvinyl precursor fiber, and high strength carbon fiber produced therefrom |
JP2015509152A (ja) | 2012-01-20 | 2015-03-26 | フリー フォーム ファイバーズ リミテッド ライアビリティ カンパニー | 高強度セラミック繊維および製造方法 |
WO2015112935A1 (en) | 2014-01-27 | 2015-07-30 | Free Form Fibers, Llc | Contiguously blended nano-scaled multi-phase fibers |
JP2017528623A (ja) | 2014-08-18 | 2017-09-28 | ダイネティクス,インコーポレイテッド | 異なる分子質量の前駆体から繊維及び微細構造を作製するための方法及び装置 |
Family Cites Families (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2124509A (en) | 1935-07-15 | 1938-07-19 | Philip M Mckenna | Carbides of tantalum and like metals and method of producing the same |
US2596469A (en) | 1951-02-27 | 1952-05-13 | Polaroid Corp | Tantalum carbide filament electric lamp containing hydrogen-volatile hydrocarbon mixture |
US3253886A (en) | 1961-05-09 | 1966-05-31 | Union Carbide Corp | Process for producing ultrafine powders of refractory materials |
US3269802A (en) | 1962-12-10 | 1966-08-30 | Horizons Inc | Preparation of carbide structures |
NL302658A (ja) | 1963-04-23 | |||
DE1250796B (de) | 1963-08-13 | 1967-09-28 | Ciba Aktiengesellschaft, Basel (Schweiz) | Verfahren zur Herstellung von feinteiligen, nicht pyrophoren Carbiden von Metallen oder Metalloiden der III., IV., V. oder VI. Gruppe des Periodischen Systems |
US3458341A (en) | 1964-08-10 | 1969-07-29 | Gen Electric | Metal boride-metal carbide-graphite deposition |
US3432336A (en) | 1964-08-25 | 1969-03-11 | North American Rockwell | Impregnation of graphite with refractory carbides |
US3419415A (en) | 1964-09-29 | 1968-12-31 | Metco Inc | Composite carbide flame spray material |
US3369920A (en) | 1964-11-24 | 1968-02-20 | Union Carbide Corp | Process for producing coatings on carbon and graphite filaments |
US3352951A (en) | 1965-02-05 | 1967-11-14 | Union Carbide Corp | Method for induction sintering refractory carbide articles |
US3399980A (en) | 1965-12-28 | 1968-09-03 | Union Carbide Corp | Metallic carbides and a process of producing the same |
US3472709A (en) | 1966-03-25 | 1969-10-14 | Nasa | Method of producing refractory composites containing tantalum carbide,hafnium carbide,and hafnium boride |
US3455682A (en) | 1967-07-31 | 1969-07-15 | Du Pont | Isostatic hot pressing of refractory bodies |
US3726643A (en) | 1970-04-09 | 1973-04-10 | I Khim Fiz Akademii Nauk | Method of producing refractory carbides,borides,silicides,sulfides,and nitrides of metals of groups iv,v,and vi of the periodic system |
US3758662A (en) | 1971-04-30 | 1973-09-11 | Westinghouse Electric Corp | In carbonaceous mold forming dense carbide articles from molten refractory metal contained |
US3867191A (en) * | 1972-02-24 | 1975-02-18 | United Aircraft Corp | Carbon-boron surfaced carbon filament |
US3791852A (en) | 1972-06-16 | 1974-02-12 | Univ California | High rate deposition of carbides by activated reactive evaporation |
DE2243527A1 (de) | 1972-09-05 | 1974-04-18 | Bayer Ag | Formkoerper aus homogenen mischungen von siliciumcarbid und siliciumnitrid und verfahren zu ihrer herstellung |
US4238547A (en) | 1973-03-27 | 1980-12-09 | The Carborundum Company | High strength yarn consisting of boron carbide fibers |
US3979500A (en) | 1973-05-02 | 1976-09-07 | Ppg Industries, Inc. | Preparation of finely-divided refractory powders of groups III-V metal borides, carbides, nitrides, silicides and sulfides |
US3932594A (en) | 1973-12-28 | 1976-01-13 | Union Carbide Corporation | Process for the preparation of fine grain metal carbide powders |
US4190439A (en) | 1973-12-28 | 1980-02-26 | Union Carbide Corporation | Process for the preparation of fine grain metal carbide powders and sintered articles therefrom |
US3891583A (en) * | 1974-02-25 | 1975-06-24 | Us Navy | Quick setting adhesive for application underwater |
US4067742A (en) | 1976-04-01 | 1978-01-10 | Nasa | Thermal shock and erosion resistant tantalum carbide ceramic material |
JPS5461299A (en) * | 1977-10-26 | 1979-05-17 | Tokushiyu Muki Zairiyou Kenkiy | Polycarbosilane partially containing siloxane linkage and method of making same |
JPS5461298A (en) * | 1977-10-26 | 1979-05-17 | Tokushiyu Muki Zairiyou Kenkiy | Polysilane having phenyl group as a portion of side chains and method of making same |
JPS5822570B2 (ja) * | 1977-12-10 | 1983-05-10 | 財団法人特殊無機材料研究所 | シリコンカ−バイド連続繊維およびその製造方法 |
US4180428A (en) | 1978-06-23 | 1979-12-25 | The United States Of America As Represented By The United States Department Of Energy | Method for making hot-pressed fiber-reinforced carbide-graphite composite |
US4278729A (en) | 1978-09-15 | 1981-07-14 | Gibson James O | Production of carbon fiber-tantalum carbide composites |
US4343836A (en) | 1979-07-26 | 1982-08-10 | United States Of America As Represented By The United States Department Of Energy | One-directional uniformly coated fibers, method of preparation, and uses therefor |
US4515763A (en) | 1981-07-15 | 1985-05-07 | Board Of Trustees Of Leland Stanford Jr. Univeristy | High specific surface area carbides and nitrides |
WO1983004188A1 (en) | 1982-06-01 | 1983-12-08 | Mitsui Toatsu Chemicals, Inc. | Process for manufacturing metal carbides and their precursors |
JPS5947424A (ja) * | 1982-09-09 | 1984-03-17 | Shin Etsu Chem Co Ltd | 炭素−炭化けい素複合繊維の製造方法 |
JPS60139820A (ja) * | 1983-12-27 | 1985-07-24 | Shin Etsu Chem Co Ltd | けい素、炭素、ほう素および窒素含有無機繊維の製造方法 |
US4851203A (en) | 1986-04-03 | 1989-07-25 | Atochem | Metal carbide and nitride powders |
US4812301A (en) | 1986-04-24 | 1989-03-14 | The United States Of America As Represented By The Secretary Of The Interior | Production of titanium nitride, carbide, and carbonitride powders |
US5336360A (en) | 1986-08-18 | 1994-08-09 | Clemson University | Laser assisted fiber growth |
EP0318506A4 (en) | 1986-08-18 | 1992-02-26 | Ceramic Research, Inc. | Laser assisted fiber growth |
US4851262A (en) | 1987-05-27 | 1989-07-25 | Carnegie-Mellon University | Method of making carbide, nitride and boride powders |
EP0310265A1 (en) * | 1987-09-30 | 1989-04-05 | The Standard Oil Company | Formation of fibrous silicon carbide and silicon nitride |
JPH0327120A (ja) * | 1989-06-20 | 1991-02-05 | Tonen Corp | 窒化珪素質無機繊維 |
US5169572A (en) | 1991-01-10 | 1992-12-08 | Matthews M Dean | Densification of powder compacts by fast pulse heating under pressure |
JPH0586509A (ja) * | 1991-07-31 | 1993-04-06 | Tonen Corp | 炭化珪素質繊維及びその製法 |
JPH05279137A (ja) * | 1992-03-30 | 1993-10-26 | Ngk Insulators Ltd | セラミック繊維及びその製造方法 |
SE504067C2 (sv) | 1992-04-30 | 1996-10-28 | Sandvik Ab | Metod att tillverka en sintrad kropp |
US5380688A (en) | 1993-08-09 | 1995-01-10 | The Dow Chemical Company | Method for making submicrometer carbides, submicrometer solid solution carbides, and the material resulting therefrom |
US5567662A (en) | 1994-02-15 | 1996-10-22 | The Dow Chemical Company | Method of making metallic carbide powders |
WO1995025834A1 (fr) | 1994-03-22 | 1995-09-28 | Tokuyama Corporation | Fibre de nitrure de bore et procede de production |
US5786023A (en) | 1996-02-13 | 1998-07-28 | Maxwell; James L. | Method and apparatus for the freeform growth of three-dimensional structures using pressurized precursor flows and growth rate control |
US6652967B2 (en) | 2001-08-08 | 2003-11-25 | Nanoproducts Corporation | Nano-dispersed powders and methods for their manufacture |
US5997832A (en) | 1997-03-07 | 1999-12-07 | President And Fellows Of Harvard College | Preparation of carbide nanorods |
US6040008A (en) | 1997-08-04 | 2000-03-21 | University Of Florida | Silicon carbide fibers with boron nitride coatings |
US6344232B1 (en) | 1998-07-30 | 2002-02-05 | The United States Of America As Represented By The Secretary Of The Air Force | Computer controlled temperature and oxygen maintenance for fiber coating CVD |
US6475276B1 (en) | 1999-10-15 | 2002-11-05 | Asm Microchemistry Oy | Production of elemental thin films using a boron-containing reducing agent |
US20030107148A1 (en) | 2001-07-26 | 2003-06-12 | Davis Troy A. | Methods of randomly dispersing chopped carbon fiber and consolidating the materials together to make a fiber reinforcement mat |
US7168935B1 (en) | 2002-08-02 | 2007-01-30 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Solid freeform fabrication apparatus and methods |
US7527779B2 (en) | 2002-11-11 | 2009-05-05 | Showa Denko K.K. | Vapor grown carbon fiber, and production method and use thereof |
FR2854168B1 (fr) | 2003-04-28 | 2007-02-09 | Messier Bugatti | Commande ou modelisation de procede d'infiltration chimique en phase vapeur pour la densification de substrats poreux par du carbone |
US7687016B1 (en) | 2004-02-13 | 2010-03-30 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | Methods for producing silicon carbide architectural preforms |
JP4958097B2 (ja) | 2006-07-19 | 2012-06-20 | 国立大学法人京都大学 | ナノファイバーシート及びその製造方法並びに繊維強化複合材料 |
US20120171106A1 (en) | 2008-01-04 | 2012-07-05 | Raytheon Company | Carbon nanotube growth via chemical vapor deposition using a catalytic transmembrane to separate feedstock and growth chambers |
US20120171098A1 (en) | 2008-01-22 | 2012-07-05 | Ppg Industries Ohio, Inc | Method of consolidating ultrafine metal carbide and metal boride particles and products made therefrom |
US8157948B2 (en) | 2008-04-08 | 2012-04-17 | Los Alamos National Security, Llc | Method of fabricating metal- and ceramic- matrix composites and functionalized textiles |
CN102066247B (zh) | 2008-06-18 | 2014-02-12 | 高级金属陶瓷有限公司 | 碳化硼陶瓷纤维 |
US8192809B2 (en) | 2008-09-03 | 2012-06-05 | Picocal, Inc | Scanning probe assisted localized CNT growth |
US8669164B2 (en) | 2009-04-03 | 2014-03-11 | Los Alamos National Security, Llc | Method of fabricating free-form, high-aspect ratio components for high-current, high-speed microelectronics |
US10167555B2 (en) * | 2014-08-18 | 2019-01-01 | Dynetics, Inc. | Method and apparatus for fabricating fibers and microstructures from disparate molar mass precursors |
-
2015
- 2015-08-17 US US14/827,752 patent/US10167555B2/en active Active
- 2015-11-03 EP EP15857529.0A patent/EP3215361A4/en active Pending
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-
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- 2018-10-19 US US16/165,535 patent/US10683574B2/en active Active
-
2020
- 2020-06-15 US US16/901,421 patent/US10947622B2/en active Active
- 2020-12-17 JP JP2020208878A patent/JP7090688B2/ja active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004510674A (ja) | 2000-09-29 | 2004-04-08 | グッドリッチ・コーポレイション | 炭化ホウ素をベースとしたセラミックマトリックス複合材料 |
JP2004176244A (ja) | 2002-11-11 | 2004-06-24 | Showa Denko Kk | 気相法炭素繊維、その製造方法及び用途 |
US20040207133A1 (en) | 2003-04-15 | 2004-10-21 | Brian Williams | Carbon-carbon reinforced melt infiltrated ceramic matrix composites |
US20060275537A1 (en) | 2005-06-02 | 2006-12-07 | The Regents Of The University Of California | Method and apparatus for field-emission high-pressure-discharge laser chemical vapor deposition of free-standing structures |
US20090061210A1 (en) | 2006-02-23 | 2009-03-05 | Picodeon Ltd Oy | Coating on a fiber substrate and a coated fiber product |
US20100055352A1 (en) | 2008-04-08 | 2010-03-04 | Los Alamos National Security, Llc | Method of fabrication of fibers, textiles and composite materials |
JP2015509152A (ja) | 2012-01-20 | 2015-03-26 | フリー フォーム ファイバーズ リミテッド ライアビリティ カンパニー | 高強度セラミック繊維および製造方法 |
US20140306364A1 (en) | 2013-04-10 | 2014-10-16 | Ut-Battelle, Llc | Controlled chemical stabilization of polyvinyl precursor fiber, and high strength carbon fiber produced therefrom |
WO2015112935A1 (en) | 2014-01-27 | 2015-07-30 | Free Form Fibers, Llc | Contiguously blended nano-scaled multi-phase fibers |
JP2017528623A (ja) | 2014-08-18 | 2017-09-28 | ダイネティクス,インコーポレイテッド | 異なる分子質量の前駆体から繊維及び微細構造を作製するための方法及び装置 |
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