JP6813495B2 - 高強度耐熱繊維材料 - Google Patents
高強度耐熱繊維材料 Download PDFInfo
- Publication number
- JP6813495B2 JP6813495B2 JP2017543286A JP2017543286A JP6813495B2 JP 6813495 B2 JP6813495 B2 JP 6813495B2 JP 2017543286 A JP2017543286 A JP 2017543286A JP 2017543286 A JP2017543286 A JP 2017543286A JP 6813495 B2 JP6813495 B2 JP 6813495B2
- Authority
- JP
- Japan
- Prior art keywords
- precursor
- fiber
- carbon
- concentration
- reaction zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 title claims description 135
- 239000012210 heat-resistant fiber Substances 0.000 title description 7
- 239000002243 precursor Substances 0.000 claims description 368
- 239000002657 fibrous material Substances 0.000 claims description 291
- 238000006243 chemical reaction Methods 0.000 claims description 219
- 239000000835 fiber Substances 0.000 claims description 182
- 241000894007 species Species 0.000 claims description 156
- 238000010438 heat treatment Methods 0.000 claims description 153
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 136
- 238000009792 diffusion process Methods 0.000 claims description 121
- 229910052799 carbon Inorganic materials 0.000 claims description 116
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 89
- 238000000034 method Methods 0.000 claims description 79
- 239000000203 mixture Substances 0.000 claims description 71
- 229910052757 nitrogen Inorganic materials 0.000 claims description 50
- -1 ittium Chemical compound 0.000 claims description 44
- 229910052710 silicon Inorganic materials 0.000 claims description 42
- 239000000654 additive Substances 0.000 claims description 41
- 230000000996 additive effect Effects 0.000 claims description 40
- 229910052796 boron Inorganic materials 0.000 claims description 40
- 239000007788 liquid Substances 0.000 claims description 38
- 239000010703 silicon Substances 0.000 claims description 37
- 239000012530 fluid Substances 0.000 claims description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 35
- 238000004519 manufacturing process Methods 0.000 claims description 33
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 32
- 229910052735 hafnium Inorganic materials 0.000 claims description 28
- 229910052715 tantalum Inorganic materials 0.000 claims description 26
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 24
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 23
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 229910052721 tungsten Inorganic materials 0.000 claims description 15
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
- 206010024769 Local reaction Diseases 0.000 claims description 13
- 229910052794 bromium Inorganic materials 0.000 claims description 13
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 11
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 11
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 10
- 229910052772 Samarium Inorganic materials 0.000 claims description 10
- 229910052775 Thulium Inorganic materials 0.000 claims description 10
- 229910052770 Uranium Inorganic materials 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 229910052731 fluorine Inorganic materials 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 229910052758 niobium Inorganic materials 0.000 claims description 10
- 239000010955 niobium Substances 0.000 claims description 10
- 229910052717 sulfur Inorganic materials 0.000 claims description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 10
- 239000010937 tungsten Substances 0.000 claims description 10
- 229910052726 zirconium Inorganic materials 0.000 claims description 10
- 229910052695 Americium Inorganic materials 0.000 claims description 9
- 229910052686 Californium Inorganic materials 0.000 claims description 9
- 229910052684 Cerium Inorganic materials 0.000 claims description 9
- 229910052781 Neptunium Inorganic materials 0.000 claims description 9
- 229910052778 Plutonium Inorganic materials 0.000 claims description 9
- 229910052793 cadmium Inorganic materials 0.000 claims description 9
- 239000000460 chlorine Substances 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 239000011651 chromium Substances 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 239000004744 fabric Substances 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 9
- 229910052732 germanium Inorganic materials 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 9
- 229910052741 iridium Inorganic materials 0.000 claims description 9
- 229910052744 lithium Inorganic materials 0.000 claims description 9
- 229910052749 magnesium Inorganic materials 0.000 claims description 9
- 239000011777 magnesium Substances 0.000 claims description 9
- 229910052762 osmium Inorganic materials 0.000 claims description 9
- 229910052763 palladium Inorganic materials 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 229910052703 rhodium Inorganic materials 0.000 claims description 9
- 239000010948 rhodium Substances 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004753 textile Substances 0.000 claims description 9
- 229910052718 tin Inorganic materials 0.000 claims description 9
- 229910052720 vanadium Inorganic materials 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 9
- 239000011701 zinc Substances 0.000 claims description 9
- 229910052691 Erbium Inorganic materials 0.000 claims description 8
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 8
- 239000011737 fluorine Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052801 chlorine Inorganic materials 0.000 claims description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052771 Terbium Inorganic materials 0.000 claims description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 6
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 6
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000011593 sulfur Substances 0.000 claims description 6
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims description 6
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical group [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052773 Promethium Inorganic materials 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052767 actinium Inorganic materials 0.000 claims description 5
- QQINRWTZWGJFDB-UHFFFAOYSA-N actinium atom Chemical compound [Ac] QQINRWTZWGJFDB-UHFFFAOYSA-N 0.000 claims description 5
- LXQXZNRPTYVCNG-UHFFFAOYSA-N americium atom Chemical compound [Am] LXQXZNRPTYVCNG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 5
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 5
- HGLDOAKPQXAFKI-UHFFFAOYSA-N californium atom Chemical compound [Cf] HGLDOAKPQXAFKI-UHFFFAOYSA-N 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 5
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 5
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 5
- 229910052753 mercury Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- LFNLGNPSGWYGGD-UHFFFAOYSA-N neptunium atom Chemical compound [Np] LFNLGNPSGWYGGD-UHFFFAOYSA-N 0.000 claims description 5
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 claims description 5
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 claims description 5
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 229910052706 scandium Inorganic materials 0.000 claims description 5
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 5
- 229910052711 selenium Inorganic materials 0.000 claims description 5
- 239000011669 selenium Substances 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910052713 technetium Inorganic materials 0.000 claims description 5
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 claims description 5
- 238000003491 array Methods 0.000 claims description 4
- 229910052790 beryllium Inorganic materials 0.000 claims description 4
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 4
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 4
- 239000002159 nanocrystal Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 2
- 239000013079 quasicrystal Substances 0.000 claims description 2
- 241000398147 Aleurodiscus amorphus Species 0.000 claims 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 239000007787 solid Substances 0.000 description 57
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 49
- 239000006227 byproduct Substances 0.000 description 47
- 229920000049 Carbon (fiber) Polymers 0.000 description 42
- 239000004917 carbon fiber Substances 0.000 description 42
- 239000002019 doping agent Substances 0.000 description 39
- 239000007789 gas Substances 0.000 description 39
- 230000000694 effects Effects 0.000 description 25
- 239000000956 alloy Substances 0.000 description 22
- 150000001875 compounds Chemical class 0.000 description 22
- 229930195733 hydrocarbon Natural products 0.000 description 21
- 229910045601 alloy Inorganic materials 0.000 description 20
- 150000002430 hydrocarbons Chemical class 0.000 description 20
- 239000001257 hydrogen Substances 0.000 description 17
- 229910052739 hydrogen Inorganic materials 0.000 description 17
- 238000002844 melting Methods 0.000 description 16
- 230000008018 melting Effects 0.000 description 16
- 238000000354 decomposition reaction Methods 0.000 description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 13
- 239000002131 composite material Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 229910002804 graphite Inorganic materials 0.000 description 12
- 239000010439 graphite Substances 0.000 description 12
- 230000003647 oxidation Effects 0.000 description 12
- 238000007254 oxidation reaction Methods 0.000 description 12
- 229910003468 tantalcarbide Inorganic materials 0.000 description 12
- 229910001339 C alloy Inorganic materials 0.000 description 11
- 230000008859 change Effects 0.000 description 11
- 230000007704 transition Effects 0.000 description 11
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000013626 chemical specie Substances 0.000 description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 9
- RGSFGYAAUTVSQA-UHFFFAOYSA-N Cyclopentane Chemical compound C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 9
- 229910010271 silicon carbide Inorganic materials 0.000 description 9
- 238000004804 winding Methods 0.000 description 9
- 229910052685 Curium Inorganic materials 0.000 description 8
- 229910052779 Neodymium Inorganic materials 0.000 description 8
- 150000001336 alkenes Chemical class 0.000 description 8
- 239000012071 phase Substances 0.000 description 8
- 229910052702 rhenium Inorganic materials 0.000 description 8
- 239000004215 Carbon black (E152) Substances 0.000 description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 7
- 229910052769 Ytterbium Inorganic materials 0.000 description 7
- 229910003481 amorphous carbon Inorganic materials 0.000 description 7
- 230000009286 beneficial effect Effects 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 239000012141 concentrate Substances 0.000 description 7
- 229910021397 glassy carbon Inorganic materials 0.000 description 7
- 229920002239 polyacrylonitrile Polymers 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- 229910000077 silane Inorganic materials 0.000 description 7
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 229910052797 bismuth Inorganic materials 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 238000006731 degradation reaction Methods 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
- 239000000543 intermediate Substances 0.000 description 6
- 229910052740 iodine Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 230000006911 nucleation Effects 0.000 description 6
- 238000010899 nucleation Methods 0.000 description 6
- 239000011295 pitch Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- HJUGFYREWKUQJT-UHFFFAOYSA-N tetrabromomethane Chemical compound BrC(Br)(Br)Br HJUGFYREWKUQJT-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 229910052689 Holmium Inorganic materials 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 5
- 238000005275 alloying Methods 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 5
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 5
- JOHCVVJGGSABQY-UHFFFAOYSA-N carbon tetraiodide Chemical compound IC(I)(I)I JOHCVVJGGSABQY-UHFFFAOYSA-N 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 230000018109 developmental process Effects 0.000 description 5
- 230000006698 induction Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000001993 wax Substances 0.000 description 5
- 210000002268 wool Anatomy 0.000 description 5
- 229910052727 yttrium Inorganic materials 0.000 description 5
- KDCGOANMDULRCW-UHFFFAOYSA-N 7H-purine Chemical compound N1=CNC2=NC=NC2=C1 KDCGOANMDULRCW-UHFFFAOYSA-N 0.000 description 4
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052693 Europium Inorganic materials 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- 229910052777 Praseodymium Inorganic materials 0.000 description 4
- 229910052776 Thorium Inorganic materials 0.000 description 4
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 4
- 150000001335 aliphatic alkanes Chemical class 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 150000001491 aromatic compounds Chemical class 0.000 description 4
- 239000002041 carbon nanotube Substances 0.000 description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 description 4
- 239000003575 carbonaceous material Substances 0.000 description 4
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 4
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 4
- 125000000753 cycloalkyl group Chemical group 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- BYLOHCRAPOSXLY-UHFFFAOYSA-N dichloro(diethyl)silane Chemical compound CC[Si](Cl)(Cl)CC BYLOHCRAPOSXLY-UHFFFAOYSA-N 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 4
- 229910021389 graphene Inorganic materials 0.000 description 4
- DMEGYFMYUHOHGS-UHFFFAOYSA-N heptamethylene Natural products C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 4
- CBFCDTFDPHXCNY-UHFFFAOYSA-N icosane Chemical group CCCCCCCCCCCCCCCCCCCC CBFCDTFDPHXCNY-UHFFFAOYSA-N 0.000 description 4
- 230000001976 improved effect Effects 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 229910052746 lanthanum Inorganic materials 0.000 description 4
- 229910052748 manganese Inorganic materials 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 229910001507 metal halide Inorganic materials 0.000 description 4
- 150000005309 metal halides Chemical class 0.000 description 4
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000010944 silver (metal) Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052714 tellurium Inorganic materials 0.000 description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 4
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 4
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 4
- 229910052724 xenon Inorganic materials 0.000 description 4
- ZTDXJUUNDNFNCV-UHFFFAOYSA-N CB1N(C)BNBN1C Chemical compound CB1N(C)BNBN1C ZTDXJUUNDNFNCV-UHFFFAOYSA-N 0.000 description 3
- PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- 229910052692 Dysprosium Inorganic materials 0.000 description 3
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 3
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 3
- DCAYPVUWAIABOU-UHFFFAOYSA-N alpha-n-hexadecene Natural products CCCCCCCCCCCCCCCC DCAYPVUWAIABOU-UHFFFAOYSA-N 0.000 description 3
- 229910000085 borane Inorganic materials 0.000 description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 3
- YMEKEHSRPZAOGO-UHFFFAOYSA-N boron triiodide Chemical compound IB(I)I YMEKEHSRPZAOGO-UHFFFAOYSA-N 0.000 description 3
- 239000007833 carbon precursor Substances 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 239000011153 ceramic matrix composite Substances 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000011809 glassy carbon fiber Substances 0.000 description 3
- 150000008282 halocarbons Chemical class 0.000 description 3
- 239000003779 heat-resistant material Substances 0.000 description 3
- QNMKKFHJKJJOMZ-UHFFFAOYSA-N hexaiodobenzene Chemical compound IC1=C(I)C(I)=C(I)C(I)=C1I QNMKKFHJKJJOMZ-UHFFFAOYSA-N 0.000 description 3
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- OKJPEAGHQZHRQV-UHFFFAOYSA-N iodoform Chemical compound IC(I)I OKJPEAGHQZHRQV-UHFFFAOYSA-N 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 125000002524 organometallic group Chemical class 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 3
- AIFMYMZGQVTROK-UHFFFAOYSA-N silicon tetrabromide Chemical compound Br[Si](Br)(Br)Br AIFMYMZGQVTROK-UHFFFAOYSA-N 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 3
- 150000003852 triazoles Chemical class 0.000 description 3
- 238000009941 weaving Methods 0.000 description 3
- 239000002759 woven fabric Substances 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 3
- LVGUZGTVOIAKKC-UHFFFAOYSA-N 1,1,1,2-tetrafluoroethane Chemical compound FCC(F)(F)F LVGUZGTVOIAKKC-UHFFFAOYSA-N 0.000 description 2
- QPFMBZIOSGYJDE-UHFFFAOYSA-N 1,1,2,2-tetrachloroethane Chemical compound ClC(Cl)C(Cl)Cl QPFMBZIOSGYJDE-UHFFFAOYSA-N 0.000 description 2
- BHASHBRUGOYKMC-UHFFFAOYSA-N 1,2,3,4-tetraiodobenzene Chemical compound IC1=CC=C(I)C(I)=C1I BHASHBRUGOYKMC-UHFFFAOYSA-N 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 2
- QPUYECUOLPXSFR-UHFFFAOYSA-N 1-methylnaphthalene Chemical compound C1=CC=C2C(C)=CC=CC2=C1 QPUYECUOLPXSFR-UHFFFAOYSA-N 0.000 description 2
- XZXYQEHISUMZAT-UHFFFAOYSA-N 2-[(2-hydroxy-5-methylphenyl)methyl]-4-methylphenol Chemical compound CC1=CC=C(O)C(CC=2C(=CC=C(C)C=2)O)=C1 XZXYQEHISUMZAT-UHFFFAOYSA-N 0.000 description 2
- 244000291564 Allium cepa Species 0.000 description 2
- 235000002732 Allium cepa var. cepa Nutrition 0.000 description 2
- 229910052580 B4C Inorganic materials 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 235000015842 Hesperis Nutrition 0.000 description 2
- 235000012633 Iberis amara Nutrition 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N Propene Chemical compound CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- 229920000297 Rayon Polymers 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000001345 alkine derivatives Chemical class 0.000 description 2
- SWLVFNYSXGMGBS-UHFFFAOYSA-N ammonium bromide Chemical compound [NH4+].[Br-] SWLVFNYSXGMGBS-UHFFFAOYSA-N 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- 229940107816 ammonium iodide Drugs 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- HONIICLYMWZJFZ-UHFFFAOYSA-N azetidine Chemical compound C1CNC1 HONIICLYMWZJFZ-UHFFFAOYSA-N 0.000 description 2
- CUFNKYGDVFVPHO-UHFFFAOYSA-N azulene Chemical compound C1=CC=CC2=CC=CC2=C1 CUFNKYGDVFVPHO-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- ABQPEYRVNHDPIO-UHFFFAOYSA-N bromo(dimethyl)borane Chemical compound CB(C)Br ABQPEYRVNHDPIO-UHFFFAOYSA-N 0.000 description 2
- KNMKGOLZNOKQGK-UHFFFAOYSA-N bromoborane Chemical compound BrB KNMKGOLZNOKQGK-UHFFFAOYSA-N 0.000 description 2
- DIKBFYAXUHHXCS-UHFFFAOYSA-N bromoform Chemical compound BrC(Br)Br DIKBFYAXUHHXCS-UHFFFAOYSA-N 0.000 description 2
- KDKYADYSIPSCCQ-UHFFFAOYSA-N but-1-yne Chemical compound CCC#C KDKYADYSIPSCCQ-UHFFFAOYSA-N 0.000 description 2
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 2
- 150000001722 carbon compounds Chemical class 0.000 description 2
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 2
- 238000003763 carbonization Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- DJGJBRMHVVAZOU-UHFFFAOYSA-N chloro(dimethyl)borane Chemical compound CB(C)Cl DJGJBRMHVVAZOU-UHFFFAOYSA-N 0.000 description 2
- UOALEFQKAOQICC-UHFFFAOYSA-N chloroborane Chemical compound ClB UOALEFQKAOQICC-UHFFFAOYSA-N 0.000 description 2
- NEHMKBQYUWJMIP-UHFFFAOYSA-N chloromethane Chemical compound ClC NEHMKBQYUWJMIP-UHFFFAOYSA-N 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 description 2
- LPIQUOYDBNQMRZ-UHFFFAOYSA-N cyclopentene Chemical compound C1CC=CC1 LPIQUOYDBNQMRZ-UHFFFAOYSA-N 0.000 description 2
- AOYNEQPNUOZMSE-UHFFFAOYSA-N dibromo(methyl)borane Chemical compound CB(Br)Br AOYNEQPNUOZMSE-UHFFFAOYSA-N 0.000 description 2
- WRWXDQSBUPVVPD-UHFFFAOYSA-N dichloro(methyl)borane Chemical compound CB(Cl)Cl WRWXDQSBUPVVPD-UHFFFAOYSA-N 0.000 description 2
- FXOCTISBMXDWGP-UHFFFAOYSA-N dichloro(silyl)silane Chemical compound [SiH3][SiH](Cl)Cl FXOCTISBMXDWGP-UHFFFAOYSA-N 0.000 description 2
- FAFYLCKQPJOORN-UHFFFAOYSA-N diethylborane Chemical compound CCBCC FAFYLCKQPJOORN-UHFFFAOYSA-N 0.000 description 2
- UCXUKTLCVSGCNR-UHFFFAOYSA-N diethylsilane Chemical compound CC[SiH2]CC UCXUKTLCVSGCNR-UHFFFAOYSA-N 0.000 description 2
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 2
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 238000007380 fibre production Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- BVBRZOLXXOIMQG-UHFFFAOYSA-N fluoroborane Chemical compound FB BVBRZOLXXOIMQG-UHFFFAOYSA-N 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 229910003472 fullerene Inorganic materials 0.000 description 2
- 239000003502 gasoline Substances 0.000 description 2
- 229940052308 general anesthetics halogenated hydrocarbons Drugs 0.000 description 2
- 230000009036 growth inhibition Effects 0.000 description 2
- QKQUUVZIDLJZIJ-UHFFFAOYSA-N hafnium tantalum Chemical compound [Hf].[Ta] QKQUUVZIDLJZIJ-UHFFFAOYSA-N 0.000 description 2
- CAYGQBVSOZLICD-UHFFFAOYSA-N hexabromobenzene Chemical compound BrC1=C(Br)C(Br)=C(Br)C(Br)=C1Br CAYGQBVSOZLICD-UHFFFAOYSA-N 0.000 description 2
- CKAPSXZOOQJIBF-UHFFFAOYSA-N hexachlorobenzene Chemical compound ClC1=C(Cl)C(Cl)=C(Cl)C(Cl)=C1Cl CKAPSXZOOQJIBF-UHFFFAOYSA-N 0.000 description 2
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- MTNDZQHUAFNZQY-UHFFFAOYSA-N imidazoline Chemical compound C1CN=CN1 MTNDZQHUAFNZQY-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- PQNFLJBBNBOBRQ-UHFFFAOYSA-N indane Chemical compound C1=CC=C2CCCC2=C1 PQNFLJBBNBOBRQ-UHFFFAOYSA-N 0.000 description 2
- OZDMLJPVUZSCAP-UHFFFAOYSA-N iodoborane Chemical compound IB OZDMLJPVUZSCAP-UHFFFAOYSA-N 0.000 description 2
- 239000003350 kerosene Substances 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 238000001182 laser chemical vapour deposition Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910052987 metal hydride Inorganic materials 0.000 description 2
- 150000004681 metal hydrides Chemical class 0.000 description 2
- 239000011156 metal matrix composite Substances 0.000 description 2
- 239000005055 methyl trichlorosilane Substances 0.000 description 2
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 2
- HDZGCSFEDULWCS-UHFFFAOYSA-N monomethylhydrazine Chemical compound CNN HDZGCSFEDULWCS-UHFFFAOYSA-N 0.000 description 2
- 239000003345 natural gas Substances 0.000 description 2
- RZJRJXONCZWCBN-UHFFFAOYSA-N octadecane Chemical compound CCCCCCCCCCCCCCCCCC RZJRJXONCZWCBN-UHFFFAOYSA-N 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000037361 pathway Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000001782 photodegradation Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- MWWATHDPGQKSAR-UHFFFAOYSA-N propyne Chemical compound CC#C MWWATHDPGQKSAR-UHFFFAOYSA-N 0.000 description 2
- DNXIASIHZYFFRO-UHFFFAOYSA-N pyrazoline Chemical compound C1CN=NC1 DNXIASIHZYFFRO-UHFFFAOYSA-N 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- 239000002516 radical scavenger Substances 0.000 description 2
- 239000002964 rayon Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000012686 silicon precursor Substances 0.000 description 2
- CFTHARXEQHJSEH-UHFFFAOYSA-N silicon tetraiodide Chemical compound I[Si](I)(I)I CFTHARXEQHJSEH-UHFFFAOYSA-N 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- KUPLEGDPSCCPJI-UHFFFAOYSA-N tetracontane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCC KUPLEGDPSCCPJI-UHFFFAOYSA-N 0.000 description 2
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 2
- ZOYFEXPFPVDYIS-UHFFFAOYSA-N trichloro(ethyl)silane Chemical compound CC[Si](Cl)(Cl)Cl ZOYFEXPFPVDYIS-UHFFFAOYSA-N 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 2
- 239000005051 trimethylchlorosilane Substances 0.000 description 2
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 2
- MKPNRFNJPBNHSO-UHFFFAOYSA-N 1,1,1,2,2,3,3,4,4,5,5,6,6,6-tetradecabromohexane Chemical compound BrC(Br)(Br)C(Br)(Br)C(Br)(Br)C(Br)(Br)C(Br)(Br)C(Br)(Br)Br MKPNRFNJPBNHSO-UHFFFAOYSA-N 0.000 description 1
- JYRMMYKXEQLXNF-UHFFFAOYSA-N 1,1,1,2,2,3,3,4,4,5,5,6,6,6-tetradecachlorohexane Chemical compound ClC(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)Cl JYRMMYKXEQLXNF-UHFFFAOYSA-N 0.000 description 1
- BVUYRETXOIPHII-UHFFFAOYSA-N 1,1,1,2,2,3,3,4,4,5,5,6,6,7,7,7-hexadecachloroheptane Chemical compound ClC(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)Cl BVUYRETXOIPHII-UHFFFAOYSA-N 0.000 description 1
- ODOGMNFTAVVCOE-UHFFFAOYSA-N 1,1,1,2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-octadecachlorooctane Chemical compound ClC(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)C(Cl)(Cl)Cl ODOGMNFTAVVCOE-UHFFFAOYSA-N 0.000 description 1
- RVHSTXJKKZWWDQ-UHFFFAOYSA-N 1,1,1,2-tetrabromoethane Chemical compound BrCC(Br)(Br)Br RVHSTXJKKZWWDQ-UHFFFAOYSA-N 0.000 description 1
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- UJPMYEOUBPIPHQ-UHFFFAOYSA-N 1,1,1-trifluoroethane Chemical compound CC(F)(F)F UJPMYEOUBPIPHQ-UHFFFAOYSA-N 0.000 description 1
- OVRRJBSHBOXFQE-UHFFFAOYSA-N 1,1,2,2-tetrabromoethene Chemical group BrC(Br)=C(Br)Br OVRRJBSHBOXFQE-UHFFFAOYSA-N 0.000 description 1
- ZGQURDGVBSSDNF-UHFFFAOYSA-N 1,1,2,2-tetraiodoethene Chemical group IC(I)=C(I)I ZGQURDGVBSSDNF-UHFFFAOYSA-N 0.000 description 1
- OZVJKTHTULCNHB-UHFFFAOYSA-N 1,1,2-tribromoethene Chemical compound BrC=C(Br)Br OZVJKTHTULCNHB-UHFFFAOYSA-N 0.000 description 1
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 1
- APQIUTYORBAGEZ-UHFFFAOYSA-N 1,1-dibromoethane Chemical compound CC(Br)Br APQIUTYORBAGEZ-UHFFFAOYSA-N 0.000 description 1
- NPNPZTNLOVBDOC-UHFFFAOYSA-N 1,1-difluoroethane Chemical compound CC(F)F NPNPZTNLOVBDOC-UHFFFAOYSA-N 0.000 description 1
- JNVXRQOSRUDXDY-UHFFFAOYSA-N 1,1-diiodoethane Chemical compound CC(I)I JNVXRQOSRUDXDY-UHFFFAOYSA-N 0.000 description 1
- QRFALSDGOMLVIR-UHFFFAOYSA-N 1,2,3,4-tetrabromobenzene Chemical compound BrC1=CC=C(Br)C(Br)=C1Br QRFALSDGOMLVIR-UHFFFAOYSA-N 0.000 description 1
- GBDZXPJXOMHESU-UHFFFAOYSA-N 1,2,3,4-tetrachlorobenzene Chemical compound ClC1=CC=C(Cl)C(Cl)=C1Cl GBDZXPJXOMHESU-UHFFFAOYSA-N 0.000 description 1
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 description 1
- QGHDLJAZIIFENW-UHFFFAOYSA-N 4-[1,1,1,3,3,3-hexafluoro-2-(4-hydroxy-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenol Chemical group C1=C(CC=C)C(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C(CC=C)=C1 QGHDLJAZIIFENW-UHFFFAOYSA-N 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-IGMARMGPSA-N Carbon-12 Chemical compound [12C] OKTJSMMVPCPJKN-IGMARMGPSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- LVZWSLJZHVFIQJ-UHFFFAOYSA-N Cyclopropane Chemical compound C1CC1 LVZWSLJZHVFIQJ-UHFFFAOYSA-N 0.000 description 1
- 241001061260 Emmelichthys struhsakeri Species 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- CYTYCFOTNPOANT-UHFFFAOYSA-N Perchloroethylene Chemical group ClC(Cl)=C(Cl)Cl CYTYCFOTNPOANT-UHFFFAOYSA-N 0.000 description 1
- 244000082204 Phyllostachys viridis Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910003691 SiBr Inorganic materials 0.000 description 1
- 229910004012 SiCx Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- PPWPWBNSKBDSPK-UHFFFAOYSA-N [B].[C] Chemical compound [B].[C] PPWPWBNSKBDSPK-UHFFFAOYSA-N 0.000 description 1
- AUEPDNOBDJYBBK-UHFFFAOYSA-N [Si].[C-]#[O+] Chemical compound [Si].[C-]#[O+] AUEPDNOBDJYBBK-UHFFFAOYSA-N 0.000 description 1
- IQXBLKYBDCBMNE-UHFFFAOYSA-N [Si]=O.[W] Chemical compound [Si]=O.[W] IQXBLKYBDCBMNE-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910001573 adamantine Inorganic materials 0.000 description 1
- 150000001350 alkyl halides Chemical class 0.000 description 1
- CAVCGVPGBKGDTG-UHFFFAOYSA-N alumanylidynemethyl(alumanylidynemethylalumanylidenemethylidene)alumane Chemical compound [Al]#C[Al]=C=[Al]C#[Al] CAVCGVPGBKGDTG-UHFFFAOYSA-N 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- UORVGPXVDQYIDP-BJUDXGSMSA-N borane Chemical class [10BH3] UORVGPXVDQYIDP-BJUDXGSMSA-N 0.000 description 1
- BGECDVWSWDRFSP-UHFFFAOYSA-N borazine Chemical compound B1NBNBN1 BGECDVWSWDRFSP-UHFFFAOYSA-N 0.000 description 1
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 1
- INLLPKCGLOXCIV-UHFFFAOYSA-N bromoethene Chemical compound BrC=C INLLPKCGLOXCIV-UHFFFAOYSA-N 0.000 description 1
- 229950005228 bromoform Drugs 0.000 description 1
- GZUXJHMPEANEGY-UHFFFAOYSA-N bromomethane Chemical compound BrC GZUXJHMPEANEGY-UHFFFAOYSA-N 0.000 description 1
- VQPFDLRNOCQMSN-UHFFFAOYSA-N bromosilane Chemical compound Br[SiH3] VQPFDLRNOCQMSN-UHFFFAOYSA-N 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- IAQRGUVFOMOMEM-UHFFFAOYSA-N butene Natural products CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 229950005499 carbon tetrachloride Drugs 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 230000006652 catabolic pathway Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 150000008280 chlorinated hydrocarbons Chemical class 0.000 description 1
- HRYZWHHZPQKTII-UHFFFAOYSA-N chloroethane Chemical compound CCCl HRYZWHHZPQKTII-UHFFFAOYSA-N 0.000 description 1
- 229960001701 chloroform Drugs 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 150000001924 cycloalkanes Chemical class 0.000 description 1
- CFBGXYDUODCMNS-UHFFFAOYSA-N cyclobutene Chemical compound C1CC=C1 CFBGXYDUODCMNS-UHFFFAOYSA-N 0.000 description 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 1
- OOXWYYGXTJLWHA-UHFFFAOYSA-N cyclopropene Chemical compound C1C=C1 OOXWYYGXTJLWHA-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000007857 degradation product Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- FJBFPHVGVWTDIP-UHFFFAOYSA-N dibromomethane Chemical compound BrCBr FJBFPHVGVWTDIP-UHFFFAOYSA-N 0.000 description 1
- ZNRKKSGNBIJSRT-UHFFFAOYSA-L dibromotantalum Chemical compound Br[Ta]Br ZNRKKSGNBIJSRT-UHFFFAOYSA-L 0.000 description 1
- NZZFYRREKKOMAT-UHFFFAOYSA-N diiodomethane Chemical compound ICI NZZFYRREKKOMAT-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000000724 energy-dispersive X-ray spectrum Methods 0.000 description 1
- 229960003750 ethyl chloride Drugs 0.000 description 1
- 239000003733 fiber-reinforced composite Substances 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- 238000001506 fluorescence spectroscopy Methods 0.000 description 1
- UHCBBWUQDAVSMS-UHFFFAOYSA-N fluoroethane Chemical compound CCF UHCBBWUQDAVSMS-UHFFFAOYSA-N 0.000 description 1
- XPBBUZJBQWWFFJ-UHFFFAOYSA-N fluorosilane Chemical compound [SiH3]F XPBBUZJBQWWFFJ-UHFFFAOYSA-N 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 1
- FEEFWFYISQGDKK-UHFFFAOYSA-J hafnium(4+);tetrabromide Chemical compound Br[Hf](Br)(Br)Br FEEFWFYISQGDKK-UHFFFAOYSA-J 0.000 description 1
- QHEDSQMUHIMDOL-UHFFFAOYSA-J hafnium(4+);tetrafluoride Chemical compound F[Hf](F)(F)F QHEDSQMUHIMDOL-UHFFFAOYSA-J 0.000 description 1
- YCJQNNVSZNFWAH-UHFFFAOYSA-J hafnium(4+);tetraiodide Chemical compound I[Hf](I)(I)I YCJQNNVSZNFWAH-UHFFFAOYSA-J 0.000 description 1
- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 description 1
- DCAYPVUWAIABOU-NJFSPNSNSA-N hexadecane Chemical group CCCCCCCCCCCCCCC[14CH3] DCAYPVUWAIABOU-NJFSPNSNSA-N 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- HVTICUPFWKNHNG-UHFFFAOYSA-N iodoethane Chemical compound CCI HVTICUPFWKNHNG-UHFFFAOYSA-N 0.000 description 1
- INQOMBQAUSQDDS-UHFFFAOYSA-N iodomethane Chemical compound IC INQOMBQAUSQDDS-UHFFFAOYSA-N 0.000 description 1
- IDIOJRGTRFRIJL-UHFFFAOYSA-N iodosilane Chemical compound I[SiH3] IDIOJRGTRFRIJL-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000155 isotopic effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910021402 lonsdaleite Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- 239000002114 nanocomposite Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229940038384 octadecane Drugs 0.000 description 1
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- YWAKXRMUMFPDSH-UHFFFAOYSA-N pentene Chemical compound CCCC=C YWAKXRMUMFPDSH-UHFFFAOYSA-N 0.000 description 1
- 229960004624 perflexane Drugs 0.000 description 1
- ZJIJAJXFLBMLCK-UHFFFAOYSA-N perfluorohexane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F ZJIJAJXFLBMLCK-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 201000006292 polyarteritis nodosa Diseases 0.000 description 1
- 125000005575 polycyclic aromatic hydrocarbon group Chemical group 0.000 description 1
- 238000009702 powder compression Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 238000009790 rate-determining step (RDS) Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- JHGCXUUFRJCMON-UHFFFAOYSA-J silicon(4+);tetraiodide Chemical compound [Si+4].[I-].[I-].[I-].[I-] JHGCXUUFRJCMON-UHFFFAOYSA-J 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000012306 spectroscopic technique Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000008093 supporting effect Effects 0.000 description 1
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 description 1
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 229950011008 tetrachloroethylene Drugs 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical compound FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 238000001089 thermophoresis Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- NVSDADJBGGUCLP-UHFFFAOYSA-N trisulfur Chemical compound S=S=S NVSDADJBGGUCLP-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 210000001170 unmyelinated nerve fiber Anatomy 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 150000003737 xenon compounds Chemical class 0.000 description 1
- ARUUTJKURHLAMI-UHFFFAOYSA-N xenon hexafluoride Chemical compound F[Xe](F)(F)(F)(F)F ARUUTJKURHLAMI-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/58007—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on refractory metal nitrides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/58007—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on refractory metal nitrides
- C04B35/58028—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on refractory metal nitrides based on zirconium or hafnium nitrides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/62227—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining fibres
- C04B35/62272—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining fibres based on non-oxide ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/62227—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining fibres
- C04B35/62272—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining fibres based on non-oxide ceramics
- C04B35/62277—Fibres based on carbides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/62227—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining fibres
- C04B35/62272—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining fibres based on non-oxide ceramics
- C04B35/62286—Fibres based on nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
- C23C16/20—Deposition of aluminium only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4418—Methods for making free-standing articles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using ion beam radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/487—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using electron radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- D—TEXTILES; PAPER
- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
- D01F8/00—Conjugated, i.e. bi- or multicomponent, artificial filaments or the like; Manufacture thereof
- D01F8/18—Conjugated, i.e. bi- or multicomponent, artificial filaments or the like; Manufacture thereof from other substances
-
- D—TEXTILES; PAPER
- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
- D01F9/00—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments
- D01F9/08—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments of inorganic material
- D01F9/12—Carbon filaments; Apparatus specially adapted for the manufacture thereof
- D01F9/127—Carbon filaments; Apparatus specially adapted for the manufacture thereof by thermal decomposition of hydrocarbon gases or vapours or other carbon-containing compounds in the form of gas or vapour, e.g. carbon monoxide, alcohols
-
- D—TEXTILES; PAPER
- D04—BRAIDING; LACE-MAKING; KNITTING; TRIMMINGS; NON-WOVEN FABRICS
- D04H—MAKING TEXTILE FABRICS, e.g. FROM FIBRES OR FILAMENTARY MATERIAL; FABRICS MADE BY SUCH PROCESSES OR APPARATUS, e.g. FELTS, NON-WOVEN FABRICS; COTTON-WOOL; WADDING ; NON-WOVEN FABRICS FROM STAPLE FIBRES, FILAMENTS OR YARNS, BONDED WITH AT LEAST ONE WEB-LIKE MATERIAL DURING THEIR CONSOLIDATION
- D04H1/00—Non-woven fabrics formed wholly or mainly of staple fibres or like relatively short fibres
- D04H1/40—Non-woven fabrics formed wholly or mainly of staple fibres or like relatively short fibres from fleeces or layers composed of fibres without existing or potential cohesive properties
- D04H1/42—Non-woven fabrics formed wholly or mainly of staple fibres or like relatively short fibres from fleeces or layers composed of fibres without existing or potential cohesive properties characterised by the use of certain kinds of fibres insofar as this use has no preponderant influence on the consolidation of the fleece
- D04H1/4209—Inorganic fibres
- D04H1/4242—Carbon fibres
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/52—Constituents or additives characterised by their shapes
- C04B2235/5296—Constituents or additives characterised by their shapes with a defined aspect ratio, e.g. indicating sphericity
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Textile Engineering (AREA)
- Optics & Photonics (AREA)
- Thermal Sciences (AREA)
- Plasma & Fusion (AREA)
- Inorganic Fibers (AREA)
- Carbon And Carbon Compounds (AREA)
Description
産業用途の炭素繊維の作製は、(少なくとも)エジソン、ジョンW.スター、アレクサンダーロジギンの時代までさかのぼる。彼らは、竹および紙の繊維を炭化し、最初の白熱灯のフィラメントを形成した。バルク炭素繊維産業は、1866年のオハイオ州Clevelandにおけるナショナルカーボン社(NCC)の構築とともに創業され、この会社は、後にユニオンカーバイド社(UCC)に買収される。NCCは、特に、照明炭素の製造用の炭素、発電機およびモータ用の炭素ブラシ、ならびに炭素バッテリを製造した。1960年代初期、ユニオンカーバイド社は、前駆体としてレーヨンを使用して、最初の市販の炭素繊維を製造した。20世紀の後半、レーヨン、ポリアクリロニトリル(PAN)、およびピッチから、高強度炭素繊維を製造する、各種方策が見出された。これらのケースでは、炭素-ベアリング前駆体が、長いストランドに回転/引き出され、その後、安定化/酸化され、炭素化され、(必要に応じて)グラファイト化される。この方法では、密度に対して極めて高強度の繊維および繊維材料が形成されるものの、使用前駆体は、使用前に合成され、および/または純化されるため、比較的高価である。これは、今日の炭素繊維製造のコストが高騰する一因となっている。
Si-C-N系では、炭化ケイ素(SiC)、窒化ケイ素(Si3N4)、およびケイ素炭素窒化物繊維強化コンポジットがC-Cコンポジットに対する一つの候補材として提供され、これらは、耐酸化性、および高い強度対重量比(比強度)のため、多くの航空宇宙用途に期待されている。
炭素およびSi-C-N高温材料の別の代替例は、ホウ素-炭素-窒化物系の材料である。これは、例えば、B4C、BN、およびB-C-N材料の化合物を含む。これらの化合物における2つの極めて有望な材料は、ヘテロダイアモンドの形態のBCNおよび立方晶BNである。B-C-Nコーティングおよび粉末の合成に関して、精力的な研究開発が行われているものの、B-C-N系では、均質で均一な繊維を製造するプロセスはほとんど認められない。
今日まで、3000℃を超える融点を有するUHTM繊維強化材料は、実質的に存在しない。ある種の関連材料が市販されている。例えば、補強コンポジット用のホウ素コートタングステン繊維、および金属炭化物コートC繊維である。
(a)前記第1の元素は、ホウ素であり、前記第2の元素は、炭素であり、さらに、窒素、および任意で少なくとも一つの添加元素を有し、前記ホウ素の濃度は、95at%以下であり、前記炭素の濃度は、95at%以下であり、前記窒素の濃度は、67at%以下であり、存在する場合、前記少なくとも一つの添加元素の濃度は、35at%以下である。この状態では、繊維材料は、各種内部結晶構造を有することができる。これには、これに限られるものではないが、立方晶内部結晶構造、ヘテロダイヤモンド内部結晶構造、およびB4Cの菱面体晶状の内部結晶構造が含まれる;
(b)ホウ素の濃度は、20〜30at%の間であり、炭素の濃度は、45〜55at%の間であり、窒素の濃度は、20〜30at%の間であり、少なくとも一つの添加元素の濃度は、15at%以下である;
(c)前記第1の元素は、ケイ素であり、前記第2の元素は、炭素であり、さらに窒素、および任意で少なくとも一つの添加元素を有し、ケイ素の濃度は、95at%以下であり、炭素の濃度は、95at%以下であり、窒素の濃度は、67at%以下であり、存在する場合、少なくとも一つの添加元素の濃度は、35at%以下である;
(d)前記第1の元素は、ケイ素であり、前記第2の元素は、炭素であり、さらに任意で少なくとも一つの添加元素を有し、ケイ素の濃度は、45〜55at%の間であり、炭素の濃度は、45〜55at%の間であり、存在する場合、少なくとも一つの添加元素の濃度は、10at%以下である;
(e)前記第1の元素は、ケイ素であり、前記第2の元素は、炭素であり、さらに任意で少なくとも一つの添加元素を有し、ケイ素の濃度は、22〜43at%の間であり、炭素の濃度は、57〜77at%の間であり、存在する場合、少なくとも一つの添加元素の濃度は、21at%以下である;
(f)前記第1の元素は、ケイ素であり、前記第2の元素は、窒素であり、さらに任意で少なくとも一つの添加元素を有し、ケイ素の濃度は、32〜52at%の間であり、窒素の濃度は、47〜67at%の間であり、存在する場合、少なくとも一つの添加元素の濃度は、21at%以下である;
(g)前記第1の元素は、ケイ素であり、前記第2の元素は、ホウ素であり、さらに任意で少なくとも一つの添加元素を有し、ケイ素の濃度は、7〜33at%の間であり、ホウ素の濃度は、33〜94at%の間であり、存在する場合、少なくとも一つの添加元素の濃度は、15at%以下である;
形態が含まれる。
(a)前記第1の元素は、タンタルであり、前記第2の元素は、ハフニウムであり、さらに、炭素、および任意で少なくとも一つの添加元素を有し、タンタルの濃度は、95at%以下であり、ハフニウムの濃度は、95at%以下であり、炭素の濃度は、5〜67at%の間であり、存在する場合、前記少なくとも一つの添加元素の濃度は、35at%以下である;
(b)前記第1の元素は、タンタルであり、前記第2の元素は、ハフニウムであり、さらに炭素を有し、タンタルの濃度は、35〜45at%の間であり、ハフニウムの濃度は、5〜15at%の間であり、炭素の濃度は、45〜55at%の間である;
(c)前記第1の元素は、ハフニウムであり、前記第2の元素は、炭素であり、さらに、窒素、および任意で少なくとも一つの添加元素を有し、ハフニウムの濃度は、95at%以下であり、炭素の濃度は、95at%以下であり、窒素の濃度は、5〜67at%の間であり、存在する場合、前記少なくとも一つの添加元素の濃度は、35at%以下である;
形態が含まれる。
また本発明は、前述の熱拡散成長抑止(TDGS)効果を改善する方法に関する。急速な繊維材料の成長中に、しばしば、分解により相当量の副生成物が生じる。これらの副生成物は、繊維材料の先端、および反応ゾーンの中央に蓄積される。前駆体は、反応ゾーンの中央から移動する。この場合、新たに堆積される繊維材料が、一部の副生成物により、繊維材料軸の中心に沿ってエッチングされる可能性がある。炭素繊維堆積のLMM前駆体としてメタンを用い、HMM前駆体としてSF6を用いる化学反応の例を考える:
3CH4(ad)+2SF6(ad)→3C(s)+2S(ad)+12H(ad)+12F(ad)→3C(s)+2S(s,g)+12HF(g)
(注記:前述の中間状態は、一例に過ぎない。実際の反応は、より複雑であり、2以上の経路の可能性がある。)この反応では、炭素繊維が急速に成長し、その後突如減速し、完全にエッチング除去される。この初期の成長速度は、3〜4mm/sのオーダーであり、(所与のCH4分圧の場合)これは、純粋なCH4に比べて、約1〜2桁大きい。初期の成長の間、反応ゾーンの周囲に副生成物が構成され、その結果、繊維材料の成長速度の減速が生じる。濃度が十分に高まると、反応が反転し、繊維材料は、mm/sの速度でエッチング除去される。炭素繊維の温度は、処理中にわたり実質的に一定であることに留意する必要がある。しかしながら、初期の段階において反応が一時的に停止されても、その後直ぐに、成長が急速に再開される。これは、成長が停止している際には、熱拡散効果が一次的に消滅するため、副生成物/エッチャントが分散されることを意味する。繊維先端の自由水素、フッ素、およびフッ酸は、エッチャントとなる傾向があり、除去する必要がある。
前述のように、簡単のため、米国特許出願第14/827,752号に記載されている開示の多くは、ここでは示さない。ただし、これらは、これに限られるものではないが、機能的に形状化され設計された短繊維およびミクロ構造材料に関するこれらの態様を含む、本発明とともに利用できる。
前述のように、簡単のため、米国特許出願第14/827,752号に記載されている開示の多くは、ここでは示さない。ただし、これらは、これに限られるものではないが、変調繊維または繊維材料、ミクロ構造、織物に情報を記録すること、ならびにこれを読み取る装置に関するこれらの態様を含む、本発明とともに利用できる。
本発明のある態様では、新たな種類のドープ化炭素繊維材料、炭素合金繊維材料、および炭素混合繊維材料、これを製造する方法、ならびに多くの繊維を同時に合成し、この材料の繊維形態を製造する方法が提供される。
CH4(g)+CBr4(g)→2C(s)+4HBr(g) [反応A]
HBr副生成物は、CH4よりも大きな質量を有するため、SBP種は、熱拡散効果により、LMM前駆体よりも大きく移動される。適切に設計された二次加熱手段の追加により、この成長ゾーンからのSBP種の除去が助長される。
CH4(g)+4HBr(g)→CBr4(g)+4H2 [反応B]
従って、ある想定される実施例では、繊維先端において、反応Aが高温で進み、炭素が生成され、その後、チャンバの残りに(またはワイヤに沿った別の位置に)HBrが分散される。その後、低温で反応Bが進み、臭素がCBr4前駆体に戻る。従って、高価な前駆体であるCBr4を一度チャンバに追加することしか必要ではない。ただし、CH4(例えば天然ガスの形態)を、一次および二次加熱手段を介したエネルギーとともに、連続的に添加しても良い。臭素は、チャンバ内で連続的にリサイクルされるため、システムからの無駄になる生成物は、ほとんどまたは僅かしか存在しない。
LMM種のみを単独で用いて生じる熱の流れに比べて、前記反応ゾーンからの熱の流れを抑制するステップと、を有する。この特定の方法において、一部の態様は、任意であることに留意する必要がある。
(a)少なくとも一つの直鎖または分岐されたアルカンを有するアルカン種:例えば、CH4、C2H6、C3H8、C4H10、C5H12、C6H14、C7H16、C8H18、C9H20、C10H22、C11H24、C12H26、C13H28、C14H30、C15H32、C16H34、C17H36、C18H38、C19H40、C20H42、C21H44、C22H46、C23H48、C24H50、C25H52、C26H54、C27H56、C28H58、C29H60、C30H62、C31H64、C32H66、C33H68、C34H70、C35H72、C36H74、C37H76、C38H78、C39H80、C40H82、C41H84、C42H86、C43H88、C44H90、C45H92、C46H94、C47H96、C48H98、C49H100、C50Hl02、C51H104、C52H106、C53H108、C54H110、C55H112、C56H114、C57H116、C58H118、C59H120、C60H122、C61H124、C62H126、C63H128、C64H130、C65H132、C66H134、C67H136、C68H138、C69H140、C70H142、C71H144、C72H146、C73H148、C74H150、C75H152、C76H154、C77H156、C78H158、C79H160、C80H162、C81H164、C82H166、C83H168、C84H170、C85H172、C86H174、C87H176、C88H178、C89H180、C90H182、C91H184、C92H186、C93H188、C94H190、C95H192、C96H194、C97H196、C98H198、C99H200、C100H202、C101H204、C102H206、C103H208、C104H210、C105H212、C106H214、C107H216、C108H218、C109H220、C110H222、C111H224、C112H226、C113H228、C114H230、C115H232、C116H234、C117H236、C118H238、C119H240、C120H242;
(b)少なくとも一つの直鎖または分岐されたアルケンを有するアルケン種:例えば、C2H4、C3H6、C4H8、C5H10、C6H12、C7H14、C8H16、C9H18、C10H20、C11H22、C12H24、C13H26、C14H28、C15H30、C16H32、C17H34、C18H36、C19H38、C20H40、C21H42、C22H44、C23H46、C24H48、C25H50、C26H52、C27H54、C28H56、C29H58、C30H60、C31H62、C32H64、C33H66、C34H68、C35H70、C36H72、C37H74、C38H76、C39H78、C40H80、C41H82、C42H84、C43H86、C44H88、C45H90、C46H92、C47H94、C48H96、C49H98、C50H100、C51H102、C52H104、C53Hl06、C54H108、C55H110、C56H112、C57H114、C58H116、C59H118、C60H120、C61H122、C62H124、C63H126、C64H128、C65H130、C66H132、C67H134、C68H136、C69H138、C70H140、C71H142、C72H144、C73H146、C74H148、C75H150、C76H152、C77H154、C78H156、C79H158、C80H160、C81H162、C82H164、C83H166、C84H168、C85H170、C86H172、C87H174、C88H176、C89H178、C90H180、C91H182、C92H184、C93H186、C94H188、C95H190、C96H192、C97H194、C98H196、C99H198、C100H200、C101H202、C102H204、C103H206、C104H208、C105H210、C106H212、C107H214、C108H216、C109H218、C110H220、C111H222、C112H224、C113H226、C114H228、C115H230、C116H232、C117H234、C118H236、C119H238、C120H240;
(c)少なくとも一つの直鎖または分岐されたアルキンを有するアルキン種:例えば、C2H2、C3H4、C4H6、C5H8、C6H10、C7H12、C8H14、C9H16、C10H18、C11H20、C12H22、C13H24、C14H26、C15H28、C16H30、C17H32、C18H34、C19H36、C20H38、C21H40、C22H42、C23H44、C24H46、C25H48、C26H50、C27H52、C28H54、C29H56、C30H58、C31H60、C32H62、C33H64、C34H66、C35H68、C36H70、C37H72、C38H74、C39H76、C40H78、C41H80、C42H82、C43H84、C44H86、C45H88、C46H90、C47H92、C48H94、C49H96、C50H98、C51H100、C52H102、C53H104、C54H106、C55H108、C56H110、C57H112、C58H114、C59H116、C60H118、C61H120、C62H122、C63H124、C64H126、C65H128、C66H130、C67H132、C68H134、C69H136、C70H138、C71H140、C72H142、C73H144、C74H146、C75H148、C76H150、C77H152、C78H154、C79H156、C80H158、C81H160、C82H162、C83H164、C84H166、C85H168、C86H170、C87H172、C88H174、C89H176、C90H178、C91H180、C92H182、C93H184、C94H186、C95H188、C96H190、C97H192、C98H194、C99H196、C100H198、C101H200、C102H202、C103H204、C104H206、C105H208、C106H210、C107H212、C108H214、C109H216、C110H218、C111H220、C112H222、C113H224、C114H226、C115H228、C116H230、C117H232、C118H234、C119H236、C120H238:
(d)シクロアルカン:例えば、C3H6、C4H8、C5H10、C6H12、C7H14、C8H16、C9H18、C10H20、C11H22、C12H24、C13H26、C14H28、C15H30、C16H32、C17H34、C18H36、C19H38、C20H40、C21H42、C22H44、C23H46、C24H48、C25H50、C26H52、C27H54、C28H56、C29H58、C30H60、C31H62、C32H64、C33H66、C34H68、C35H70、C36H72、C37H74、C38H76、C39H78、C40H80、C41H82、C42H84、C43H86、C44H88、C45H90、C46H92、C47H94、C48H96、C49H98、C50H100、C51H102、C52H104、C53H106、C54H108、C55H110、C56H112、C57H114、C58H116、C59H118、C60H120、C61H122、C62H124、C63H126、C64H128、C65H130、C66H132、C67H134、C68H136、C69H138、C70H140、C71H142、C72H144、C73H146、C74H148、C75H150、C76H152、C77H154、C78H156、C79H158、C80H160、C81H162、C82H164、C83H166、C84H168、C85H170、C86H172、C87H174、C88H176、C89H178、C90H180、C91H182、C92H184、C93H186、C94H188、C95H190、C96H192、C97H194、C98H196、C99H198、C100H200、C101H202、C102H204、C103H206、C104H208、C105H210、C106H212、C107H214、C108H216、C109H218、C110H220、C111H222、C112H224、C113H226、C114H228、C115H230、C116H232、C117H234、C118H236、C119H238、C120H240、C6H10、C7H12、C8H14、C9H16、C10H18、C11H20、C12H22、C13H24、C14H26、C15H28、C16H30、C17H32、C18H34、C19H36、C20H38、C21H40、C22H42、C23H44、C24H46、C25H48、C26H50、C27H52、C28H54、C29H56、C30H58、C31H60、C32H62、C33H64、C34H66、C35H68、C36H70、C37H72、C38H74、C39H76、C40H78、C41H80、C42H82、C43H84、C44H86、C45H88、C46H90、C47H92、C48H94、C49H96、C50H98、C51H100、C52H102、C53H104、C54H106、C55H108、C56H110、C57H112、C58H114、C59H116、C60H118、C61H120、C62H122、C63H124、C64H126、C65H128、C66H130、C67H132、C68H134、C69H136、C70H138、C71H140、C72H142、C73H144、C74H146、C75H148、C76H150、C77H152、C78H154、C79H156、C80H158、C81H160、C82H162、C83H164、C84H166、C85H168、C86H170、C87H172、C88H174、C89H176、C90H178、C91H180、C92H182、C93H184、C94H186、C95H188、C96H190、C97H192、C98H194、C99H196、C100H198、C101H200、C102H202、C103H204、C104H206、C105H208、C106H210、C107H212、C108H214、C109H216、C110H218、C111H220、C112H222、C113H224、C114H226、C115H228、C116H230、C117H232、C118H234、C119H236、C120H238:
(e)環状/芳香族炭化水素または多環式芳香族炭化水素:例えば、ベンゼン(C6H6)、トルエン(C7H8)、キシレン(C8H10)、インダン(C9H10)、ナフタレン(C10H8)、テトラリン(C10H16)、メチルナフタレン(C11H10)、アズレン(C10H8)、アントラセン(C14H10)、ピレン(C16H10):
および(f)ダイヤモンドイド/アダマンタン-ベアリング種:例えばアダマンタン(C10H16)、アイサン(C12H18)、BC-8(C14H18)、ジアマンタン(C14H20)、トリアマンタン(C18H24)、テトラマンタン(C22H28)、ペンタマンタン(C26H32)、シクロヘキサマンタン(C26H30)、C30H34、C30H36、C34H40、C38H44、C42H48、C46H52、C50H56、C54H60、C58H64、C62H68、C66H72、C70H76、C74H80、C78H84、C82H88、C86H92、C90H96、C94H100、C98H104、C102H108、C106H112、C110H116、C114H120、C118H124、C122H128。
出願人は、B-C-N-X系の各種繊維材料を成長させた。ここで、B=ホウ素、C=炭素、N=窒素、Xは、ドーパント/合金元素であり、ここでは「添加元素」とも称される。非ドープの微細粒ホウ素炭素窒化物(BCN)繊維または繊維材料の一例は、図19に示されている。この繊維材料および同様の繊維材料は、個々に1GPaを超える繊維引張強度を示す。
出願人は、Si-C-N系の各種繊維材料を成長させた。ここで、B=ホウ素、C=炭素、N=窒素、Xは、ドーパント/合金元素であり、ここでは「添加元素」とも称される。非ドープの微細粒ケイ素炭化物繊維の一例は、図20に示されている。この繊維材料および同様の繊維材料は、個々に最大4.3GPaの繊維引張強度を示す。
出願人は、Ta-Hf-C-N-X系の各種繊維材料を成長させた。ここで、Ta=タンタル、Hf=ハフニウム、C=炭素、N=窒素、Xは、ドーパント/合金元素であり、ここでは「添加元素」とも称される。非ドープの微細粒タンタル-ハフニウム-炭化物(Ta-Hf-C)繊維の一例は、図21に示されている。完全に緻密なTaC、HfC、およびTaxHfyCz繊維が認められている。組成は、中心でおおよそTa4HfC5(一例として図21参照)である。これらは、既知の最も高温の耐熱材料である。これらの材料は、微粒子繊維材料として、連続的に成長し、これらの元素の均一な固溶体を有する。繊維材料は、Ta-Hf-C系材料を超える、優れた強度、靭性、および高温安定性を示す。また出願人は、同様の方法で、様々な各種耐熱金属および化合物、例えば図11に示すタングステン繊維が堆積可能であることを示した。
Claims (12)
- 少なくとも第1の元素と第2の元素とを有する繊維材料の製造方法であって、
a.前記第1の元素は、ケイ素であり、
b.前記第2の元素は、炭素であり、
当該方法は、
(i)高モル質量前駆体種および低モル質量前駆体種を含む前駆体流体混合物を反応容器内に導入するステップであって、前記高モル質量前駆体種は、前記低モル質量前駆体種よりも実質的に大きなモル質量を有する、ステップと、
(ii)少なくとも一つの加熱手段の使用により、前記反応容器内に、局所的反応ゾーンを形成するステップであって、前記局所的反応ゾーンまたはその近傍に熱拡散領域が形成される、ステップと、
を有し、
前記少なくとも一つの加熱手段は、集束レーザビーム、イオン/原子ビーム、電子/粒子ビーム、電気放電、またはこれらの任意の組み合わせからなる群から選定され、
前記局所的反応ゾーンにおいて、前駆体流体混合物は、気体、液体、臨界もしくは超臨界前駆体状態であり、
前記熱拡散領域には、前記低モル質量前駆体種および前記高モル質量前駆体種の濃度勾配が形成され、前記低モル質量前駆体種は、前記局所的反応ゾーンを取り囲む傾向となり、前記高モル質量前駆体種は、前記局所的反応ゾーンから離れて、前記熱拡散領域の外側に配置される傾向となり、
前記局所的反応ゾーンまたはその近傍において、繊維材料が成長する、繊維材料の製造方法。 - さらに窒素および少なくとも一つの添加元素を有し、
ケイ素の濃度は、95at%以下であり、炭素の濃度は、95at%以下であり、窒素の濃度は、67at%以下であり、少なくとも一つの添加元素の濃度は、35at%以下である、請求項1に記載の繊維材料の製造方法。 - さらに窒素を有し、
ケイ素の濃度は、95at%以下であり、炭素の濃度は、95at%以下であり、窒素の濃度は、67at%以下である、請求項1に記載の繊維材料の製造方法。 - さらに少なくとも一つの添加元素を有し、
ケイ素の濃度は、45〜55at%の間であり、炭素の濃度は、45〜55at%の間であり、少なくとも一つの添加元素の濃度は、10at%以下である、請求項1に記載の繊維材料の製造方法。 - ケイ素の濃度は、45〜55at%の間であり、炭素の濃度は、45〜55at%の間である、請求項1に記載の繊維材料の製造方法。
- さらに少なくとも一つの添加元素を有し、
ケイ素の濃度は、22〜43at%の間であり、炭素の濃度は、57〜77at%の間であり、少なくとも一つの添加元素の濃度は、21at%以下である、請求項1に記載の繊維材料の製造方法。 - ケイ素の濃度は、22〜43at%の間であり、炭素の濃度は、57〜77at%の間である、請求項1に記載の繊維材料の製造方法。
- 当該繊維材料は、1または2以上の繊維で構成され、
前記繊維は、各々、少なくとも3:1の全長対直径のアスペクト比を有する、請求項1に記載の繊維材料の製造方法。 - 当該繊維材料は、単一繊維のストランド、多数の繊維のストランド、短形状繊維、繊維のアレイ、トウ、ロープ、ファブリクス、織物、格子、ナノ/ミクロ構造、メゾ構造材料、およびスポンジ状材料の少なくとも一つである、請求項1に記載の繊維材料の製造方法。
- 前記少なくとも一つの添加元素は、リチウム、ベリリウム、ホウ素、窒素、酸素、フッ素、マグネシウム、アルミニウム、ケイ素、リン、硫黄、塩素、スカンジウム、チタン、バナジウム、クロム、マンガン、鉄、コバルト、ニッケル、銅、亜鉛、ガリウム、ゲルマニウム、セレン、臭素、イットリウム、ジルコニウム、ニオブ、モリブデン、テクネチウム、ルテニウム、ロジウム、パラジウム、銀、カドミウム、インジウム、スズ、アンチモン、テルル、ヨウ素、ランタン、セリウム、プラセオジミウム、ネオジミウム、プロメチウム、サマリウム、ガドリニウム、テルビウム、ジスプロジウム、ホロミウム、エルビウム、ツリウム、イッテルビウム、ハフニウム、タンタル、タングステン、レニウム、オスミウム、イリジウム、白金、金、水銀、鉛、ビスマス、アクチニウム、トリウム、ウラン、ネプツニウム、プルトニウム、アメリシウム、キュリウム、およびカリホルニウムの少なくとも一つである、請求項2に記載の繊維材料の製造方法。
- 当該繊維材料は、内部結晶構造を有し、
該内部結晶構造は、
a.アモルファス、ガラス状、ガラス質、無秩序非結晶、または準結晶の形態であり、35nm以上の長さスケールで、見かけの長範囲の秩序は存在しない形態、
b.グレインサイズが100nm未満のナノ結晶形態、
c.グレインサイズが100〜500nmの範囲の結晶質、超微細粒の形態、
d.グレインサイズが5ミクロン未満の結晶質、微細粒の形態、および
e.単結晶
の一つである、請求項1に記載の繊維材料の製造方法。 - 前記熱拡散領域は、少なくとも一部が二次加熱手段により制御される、請求項1に記載の繊維材料の製造方法。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462074703P | 2014-11-04 | 2014-11-04 | |
US201462074739P | 2014-11-04 | 2014-11-04 | |
US62/074,703 | 2014-11-04 | ||
US62/074,739 | 2014-11-04 | ||
US14/827,752 US10167555B2 (en) | 2014-08-18 | 2015-08-17 | Method and apparatus for fabricating fibers and microstructures from disparate molar mass precursors |
US14/827,752 | 2015-08-17 | ||
PCT/US2015/058865 WO2016073504A1 (en) | 2014-11-04 | 2015-11-03 | High-strength refractory fibrous materials |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020208878A Division JP7090688B2 (ja) | 2014-11-04 | 2020-12-17 | 高強度耐熱繊維材料 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2018503004A JP2018503004A (ja) | 2018-02-01 |
JP2018503004A5 JP2018503004A5 (ja) | 2018-09-13 |
JP6813495B2 true JP6813495B2 (ja) | 2021-01-13 |
Family
ID=55909709
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017543286A Active JP6813495B2 (ja) | 2014-11-04 | 2015-11-03 | 高強度耐熱繊維材料 |
JP2020208878A Active JP7090688B2 (ja) | 2014-11-04 | 2020-12-17 | 高強度耐熱繊維材料 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020208878A Active JP7090688B2 (ja) | 2014-11-04 | 2020-12-17 | 高強度耐熱繊維材料 |
Country Status (4)
Country | Link |
---|---|
US (3) | US10167555B2 (ja) |
EP (1) | EP3215361A4 (ja) |
JP (2) | JP6813495B2 (ja) |
WO (1) | WO2016073504A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10041745B2 (en) | 2010-05-04 | 2018-08-07 | Fractal Heatsink Technologies LLC | Fractal heat transfer device |
US10119059B2 (en) | 2011-04-11 | 2018-11-06 | Jun Cui | Thermoelastic cooling |
US10018385B2 (en) * | 2012-03-27 | 2018-07-10 | University Of Maryland, College Park | Solid-state heating or cooling systems, devices, and methods |
US10179948B2 (en) * | 2014-04-24 | 2019-01-15 | United Technologies Corporation | Method and system for controlling coating in non-line-of-sight locations |
US10167555B2 (en) * | 2014-08-18 | 2019-01-01 | Dynetics, Inc. | Method and apparatus for fabricating fibers and microstructures from disparate molar mass precursors |
US11499230B2 (en) | 2014-08-18 | 2022-11-15 | Dynetics, Inc. | Method and apparatus for fabricating fibers and microstructures from disparate molar mass precursors |
US10168501B2 (en) * | 2016-05-27 | 2019-01-01 | Nxgen Partners Ip, Llc | System and method for transmissions using eliptical core fibers |
CA3037763A1 (en) * | 2016-09-28 | 2018-04-05 | Free Form Fibers, Llc | Multi-composition fiber with refractory additive(s) and method of making |
WO2018102352A1 (en) * | 2016-11-29 | 2018-06-07 | Free Form Fibers, Llc | Fiber with elemental additive(s) and method of making |
GB2553390B (en) * | 2017-03-15 | 2020-01-15 | Rolls Royce Power Eng Plc | Method of manufacture |
US11031312B2 (en) | 2017-07-17 | 2021-06-08 | Fractal Heatsink Technologies, LLC | Multi-fractal heatsink system and method |
ES2911518T3 (es) * | 2017-09-08 | 2022-05-19 | Sze Spezial Elektronik Hagenuk Gmbh | Tela no tejida para el apantallamiento de las frecuencias de terahercios |
Family Cites Families (78)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2124509A (en) | 1935-07-15 | 1938-07-19 | Philip M Mckenna | Carbides of tantalum and like metals and method of producing the same |
US2596469A (en) | 1951-02-27 | 1952-05-13 | Polaroid Corp | Tantalum carbide filament electric lamp containing hydrogen-volatile hydrocarbon mixture |
US6482262B1 (en) | 1959-10-10 | 2002-11-19 | Asm Microchemistry Oy | Deposition of transition metal carbides |
US3253886A (en) | 1961-05-09 | 1966-05-31 | Union Carbide Corp | Process for producing ultrafine powders of refractory materials |
US3269802A (en) | 1962-12-10 | 1966-08-30 | Horizons Inc | Preparation of carbide structures |
NL302658A (ja) | 1963-04-23 | |||
BE651736A (ja) | 1963-08-13 | |||
US3458341A (en) | 1964-08-10 | 1969-07-29 | Gen Electric | Metal boride-metal carbide-graphite deposition |
US3432336A (en) | 1964-08-25 | 1969-03-11 | North American Rockwell | Impregnation of graphite with refractory carbides |
US3419415A (en) | 1964-09-29 | 1968-12-31 | Metco Inc | Composite carbide flame spray material |
US3369920A (en) | 1964-11-24 | 1968-02-20 | Union Carbide Corp | Process for producing coatings on carbon and graphite filaments |
US3352951A (en) | 1965-02-05 | 1967-11-14 | Union Carbide Corp | Method for induction sintering refractory carbide articles |
US3399980A (en) | 1965-12-28 | 1968-09-03 | Union Carbide Corp | Metallic carbides and a process of producing the same |
US3472709A (en) | 1966-03-25 | 1969-10-14 | Nasa | Method of producing refractory composites containing tantalum carbide,hafnium carbide,and hafnium boride |
US3455682A (en) | 1967-07-31 | 1969-07-15 | Du Pont | Isostatic hot pressing of refractory bodies |
US3726643A (en) | 1970-04-09 | 1973-04-10 | I Khim Fiz Akademii Nauk | Method of producing refractory carbides,borides,silicides,sulfides,and nitrides of metals of groups iv,v,and vi of the periodic system |
US3758662A (en) | 1971-04-30 | 1973-09-11 | Westinghouse Electric Corp | In carbonaceous mold forming dense carbide articles from molten refractory metal contained |
US3867191A (en) * | 1972-02-24 | 1975-02-18 | United Aircraft Corp | Carbon-boron surfaced carbon filament |
US3791852A (en) | 1972-06-16 | 1974-02-12 | Univ California | High rate deposition of carbides by activated reactive evaporation |
DE2243527A1 (de) * | 1972-09-05 | 1974-04-18 | Bayer Ag | Formkoerper aus homogenen mischungen von siliciumcarbid und siliciumnitrid und verfahren zu ihrer herstellung |
US4238547A (en) | 1973-03-27 | 1980-12-09 | The Carborundum Company | High strength yarn consisting of boron carbide fibers |
US3979500A (en) | 1973-05-02 | 1976-09-07 | Ppg Industries, Inc. | Preparation of finely-divided refractory powders of groups III-V metal borides, carbides, nitrides, silicides and sulfides |
US3932594A (en) | 1973-12-28 | 1976-01-13 | Union Carbide Corporation | Process for the preparation of fine grain metal carbide powders |
US4190439A (en) | 1973-12-28 | 1980-02-26 | Union Carbide Corporation | Process for the preparation of fine grain metal carbide powders and sintered articles therefrom |
US3891583A (en) * | 1974-02-25 | 1975-06-24 | Us Navy | Quick setting adhesive for application underwater |
US4067742A (en) | 1976-04-01 | 1978-01-10 | Nasa | Thermal shock and erosion resistant tantalum carbide ceramic material |
JPS5461298A (en) * | 1977-10-26 | 1979-05-17 | Tokushiyu Muki Zairiyou Kenkiy | Polysilane having phenyl group as a portion of side chains and method of making same |
JPS5461299A (en) * | 1977-10-26 | 1979-05-17 | Tokushiyu Muki Zairiyou Kenkiy | Polycarbosilane partially containing siloxane linkage and method of making same |
JPS5822570B2 (ja) * | 1977-12-10 | 1983-05-10 | 財団法人特殊無機材料研究所 | シリコンカ−バイド連続繊維およびその製造方法 |
US4180428A (en) | 1978-06-23 | 1979-12-25 | The United States Of America As Represented By The United States Department Of Energy | Method for making hot-pressed fiber-reinforced carbide-graphite composite |
US4278729A (en) | 1978-09-15 | 1981-07-14 | Gibson James O | Production of carbon fiber-tantalum carbide composites |
US4343836A (en) | 1979-07-26 | 1982-08-10 | United States Of America As Represented By The United States Department Of Energy | One-directional uniformly coated fibers, method of preparation, and uses therefor |
US4515763A (en) | 1981-07-15 | 1985-05-07 | Board Of Trustees Of Leland Stanford Jr. Univeristy | High specific surface area carbides and nitrides |
WO1983004188A1 (en) | 1982-06-01 | 1983-12-08 | Mitsui Toatsu Chemicals, Inc. | Process for manufacturing metal carbides and their precursors |
JPS5947424A (ja) * | 1982-09-09 | 1984-03-17 | Shin Etsu Chem Co Ltd | 炭素−炭化けい素複合繊維の製造方法 |
JPS60139820A (ja) * | 1983-12-27 | 1985-07-24 | Shin Etsu Chem Co Ltd | けい素、炭素、ほう素および窒素含有無機繊維の製造方法 |
US4784839A (en) | 1986-04-03 | 1988-11-15 | Atochem | Method of making metal carbide and nitride powders |
US4812301A (en) | 1986-04-24 | 1989-03-14 | The United States Of America As Represented By The Secretary Of The Interior | Production of titanium nitride, carbide, and carbonitride powders |
US5336360A (en) | 1986-08-18 | 1994-08-09 | Clemson University | Laser assisted fiber growth |
EP0318506A4 (en) | 1986-08-18 | 1992-02-26 | Ceramic Research, Inc. | Laser assisted fiber growth |
US4851262A (en) | 1987-05-27 | 1989-07-25 | Carnegie-Mellon University | Method of making carbide, nitride and boride powders |
EP0310265A1 (en) * | 1987-09-30 | 1989-04-05 | The Standard Oil Company | Formation of fibrous silicon carbide and silicon nitride |
JPH0327120A (ja) * | 1989-06-20 | 1991-02-05 | Tonen Corp | 窒化珪素質無機繊維 |
US5169572A (en) | 1991-01-10 | 1992-12-08 | Matthews M Dean | Densification of powder compacts by fast pulse heating under pressure |
JPH0586509A (ja) * | 1991-07-31 | 1993-04-06 | Tonen Corp | 炭化珪素質繊維及びその製法 |
JPH05279137A (ja) * | 1992-03-30 | 1993-10-26 | Ngk Insulators Ltd | セラミック繊維及びその製造方法 |
SE504067C2 (sv) | 1992-04-30 | 1996-10-28 | Sandvik Ab | Metod att tillverka en sintrad kropp |
US5380688A (en) | 1993-08-09 | 1995-01-10 | The Dow Chemical Company | Method for making submicrometer carbides, submicrometer solid solution carbides, and the material resulting therefrom |
US5567662A (en) | 1994-02-15 | 1996-10-22 | The Dow Chemical Company | Method of making metallic carbide powders |
DE69503722T2 (de) | 1994-03-22 | 1999-04-15 | Tokuyama Corp | Boronitridfaser und verfahren zu deren herstellung |
US5786023A (en) | 1996-02-13 | 1998-07-28 | Maxwell; James L. | Method and apparatus for the freeform growth of three-dimensional structures using pressurized precursor flows and growth rate control |
US6652967B2 (en) | 2001-08-08 | 2003-11-25 | Nanoproducts Corporation | Nano-dispersed powders and methods for their manufacture |
US5997832A (en) | 1997-03-07 | 1999-12-07 | President And Fellows Of Harvard College | Preparation of carbide nanorods |
US6040008A (en) | 1997-08-04 | 2000-03-21 | University Of Florida | Silicon carbide fibers with boron nitride coatings |
US6344232B1 (en) | 1998-07-30 | 2002-02-05 | The United States Of America As Represented By The Secretary Of The Air Force | Computer controlled temperature and oxygen maintenance for fiber coating CVD |
ATE350358T1 (de) * | 2000-09-29 | 2007-01-15 | Goodrich Corp | Verbundwerkstoffe mit keramischer matrix auf borcarbidbasis |
US20030107148A1 (en) | 2001-07-26 | 2003-06-12 | Davis Troy A. | Methods of randomly dispersing chopped carbon fiber and consolidating the materials together to make a fiber reinforcement mat |
US7168935B1 (en) | 2002-08-02 | 2007-01-30 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Solid freeform fabrication apparatus and methods |
US7527779B2 (en) | 2002-11-11 | 2009-05-05 | Showa Denko K.K. | Vapor grown carbon fiber, and production method and use thereof |
JP3964381B2 (ja) * | 2002-11-11 | 2007-08-22 | 昭和電工株式会社 | 気相法炭素繊維、その製造方法及び用途 |
US7297368B2 (en) | 2003-04-15 | 2007-11-20 | Ultramet | Method of making carbon fiber-carbon matrix reinforced ceramic composites |
FR2854168B1 (fr) | 2003-04-28 | 2007-02-09 | Messier Bugatti | Commande ou modelisation de procede d'infiltration chimique en phase vapeur pour la densification de substrats poreux par du carbone |
US7687016B1 (en) | 2004-02-13 | 2010-03-30 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | Methods for producing silicon carbide architectural preforms |
US20060275537A1 (en) | 2005-06-02 | 2006-12-07 | The Regents Of The University Of California | Method and apparatus for field-emission high-pressure-discharge laser chemical vapor deposition of free-standing structures |
WO2007096485A2 (en) | 2006-02-23 | 2007-08-30 | Picodeon Ltd Oy | Coating on a metal substrate and a coated metal product |
JP4958097B2 (ja) | 2006-07-19 | 2012-06-20 | 国立大学法人京都大学 | ナノファイバーシート及びその製造方法並びに繊維強化複合材料 |
US20120171106A1 (en) | 2008-01-04 | 2012-07-05 | Raytheon Company | Carbon nanotube growth via chemical vapor deposition using a catalytic transmembrane to separate feedstock and growth chambers |
US20120171098A1 (en) | 2008-01-22 | 2012-07-05 | Ppg Industries Ohio, Inc | Method of consolidating ultrafine metal carbide and metal boride particles and products made therefrom |
US8361566B2 (en) * | 2008-04-08 | 2013-01-29 | Los Alamos National Security, Llc | Method of fabrication of fibers, textiles and composite materials |
US8157948B2 (en) | 2008-04-08 | 2012-04-17 | Los Alamos National Security, Llc | Method of fabricating metal- and ceramic- matrix composites and functionalized textiles |
CN102066247B (zh) | 2008-06-18 | 2014-02-12 | 高级金属陶瓷有限公司 | 碳化硼陶瓷纤维 |
US8192809B2 (en) | 2008-09-03 | 2012-06-05 | Picocal, Inc | Scanning probe assisted localized CNT growth |
US8669164B2 (en) | 2009-04-03 | 2014-03-11 | Los Alamos National Security, Llc | Method of fabricating free-form, high-aspect ratio components for high-current, high-speed microelectronics |
JP6353368B2 (ja) * | 2012-01-20 | 2018-07-04 | フリー フォーム ファイバーズ リミテッド ライアビリティ カンパニー | 高強度セラミック繊維および製造方法 |
US9528197B2 (en) | 2013-04-10 | 2016-12-27 | Ut-Battelle, Llc | Controlled chemical stabilization of polyvinyl precursor fiber, and high strength carbon fiber produced therefrom |
EP3099849A4 (en) * | 2014-01-27 | 2017-11-22 | Free Form Fibers LLC | Contiguously blended nano-scaled multi-phase fibers |
EP3183377A4 (en) * | 2014-08-18 | 2018-04-04 | Dynetics, Inc. | Method and apparatus for fabricating fibers and microstructures from disparate molar mass precursors |
US10167555B2 (en) * | 2014-08-18 | 2019-01-01 | Dynetics, Inc. | Method and apparatus for fabricating fibers and microstructures from disparate molar mass precursors |
-
2015
- 2015-08-17 US US14/827,752 patent/US10167555B2/en active Active
- 2015-11-03 WO PCT/US2015/058865 patent/WO2016073504A1/en active Application Filing
- 2015-11-03 JP JP2017543286A patent/JP6813495B2/ja active Active
- 2015-11-03 EP EP15857529.0A patent/EP3215361A4/en active Pending
-
2018
- 2018-10-19 US US16/165,535 patent/US10683574B2/en active Active
-
2020
- 2020-06-15 US US16/901,421 patent/US10947622B2/en active Active
- 2020-12-17 JP JP2020208878A patent/JP7090688B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP7090688B2 (ja) | 2022-06-24 |
JP2021059833A (ja) | 2021-04-15 |
US20160369400A1 (en) | 2016-12-22 |
US10167555B2 (en) | 2019-01-01 |
US10683574B2 (en) | 2020-06-16 |
EP3215361A1 (en) | 2017-09-13 |
US20200332417A1 (en) | 2020-10-22 |
US20200149167A1 (en) | 2020-05-14 |
US10947622B2 (en) | 2021-03-16 |
EP3215361A4 (en) | 2018-10-17 |
WO2016073504A1 (en) | 2016-05-12 |
JP2018503004A (ja) | 2018-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7090688B2 (ja) | 高強度耐熱繊維材料 | |
US20160237595A1 (en) | High-Strength Refractory Fibrous Materials | |
US10435820B2 (en) | Composite articles comprising metal carbide fibers | |
Zhang et al. | Diameter modification of silicon nanowires by ambient gas | |
EP2038238B1 (fr) | Poudres de phase max et procede de fabrication desdites poudres | |
CA3044401C (en) | Fiber with elemental additive(s) and method of making | |
JPS62216906A (ja) | 複合粉末状粒子,製造方法および製造装置 | |
JP6946383B2 (ja) | 異なるモル質量の前駆体から繊維及び微細構造を作製するための方法及び装置 | |
US20180087157A1 (en) | Multi-composition fiber with refractory additive(s) and method of making | |
Wallenberger et al. | Inorganic fibers and microstructures directly from the vapor phase | |
US20220033999A1 (en) | High-Strength Refractory Fibrous Materials | |
US5798143A (en) | CVD process for making a hollow diamond tube | |
Wallenberger | Inorganic fibres and microfabricated parts by laser assisted chemical vapour deposition (LCVD): structures and properties | |
US7364714B2 (en) | 3C-SIC nanowhisker and synthesizing method and 3C-SIC nanowhisker | |
Woo et al. | Effect of ion bombardment on microstructures of carbon nanotubes grown by electron cyclotron resonance chemical vapor deposition at low temperatures | |
Cardoso et al. | Control of the length and density of carbon nanotubes grown on carbon fiber for composites reinforcement | |
US11499230B2 (en) | Method and apparatus for fabricating fibers and microstructures from disparate molar mass precursors | |
Jintakosol et al. | Synthesis of Silicon Carbide Nanowires Doped with Al2O3 | |
May et al. | NM Everitt | |
Boskovic et al. | CARBON FIBRE COMPOSITES WITH IN SITU GROWN CARBON NANOTUBES |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180806 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180806 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190821 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190827 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191121 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200407 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20200706 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200827 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20201117 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201217 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6813495 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |