JP7088810B2 - 基板処理方法および基板処理装置 - Google Patents

基板処理方法および基板処理装置 Download PDF

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Publication number
JP7088810B2
JP7088810B2 JP2018209656A JP2018209656A JP7088810B2 JP 7088810 B2 JP7088810 B2 JP 7088810B2 JP 2018209656 A JP2018209656 A JP 2018209656A JP 2018209656 A JP2018209656 A JP 2018209656A JP 7088810 B2 JP7088810 B2 JP 7088810B2
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Japan
Prior art keywords
substrate
nozzle portion
nozzle
outermost position
processing method
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JP2018209656A
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English (en)
Japanese (ja)
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JP2020077735A (ja
Inventor
雅彦 加藤
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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Publication date
Application filed by Screen Holdings Co Ltd filed Critical Screen Holdings Co Ltd
Priority to JP2018209656A priority Critical patent/JP7088810B2/ja
Priority to CN201980073208.7A priority patent/CN112997279B/zh
Priority to KR1020237028909A priority patent/KR102609673B1/ko
Priority to KR1020217013295A priority patent/KR102572925B1/ko
Priority to PCT/JP2019/039520 priority patent/WO2020095598A1/ja
Priority to TW108137337A priority patent/TWI727461B/zh
Publication of JP2020077735A publication Critical patent/JP2020077735A/ja
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Publication of JP7088810B2 publication Critical patent/JP7088810B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2018209656A 2018-11-07 2018-11-07 基板処理方法および基板処理装置 Active JP7088810B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2018209656A JP7088810B2 (ja) 2018-11-07 2018-11-07 基板処理方法および基板処理装置
CN201980073208.7A CN112997279B (zh) 2018-11-07 2019-10-07 基板处理方法以及基板处理装置
KR1020237028909A KR102609673B1 (ko) 2018-11-07 2019-10-07 기판 처리 방법 및 기판 처리 장치
KR1020217013295A KR102572925B1 (ko) 2018-11-07 2019-10-07 기판 처리 방법 및 기판 처리 장치
PCT/JP2019/039520 WO2020095598A1 (ja) 2018-11-07 2019-10-07 基板処理方法および基板処理装置
TW108137337A TWI727461B (zh) 2018-11-07 2019-10-16 基板處理方法以及基板處理裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018209656A JP7088810B2 (ja) 2018-11-07 2018-11-07 基板処理方法および基板処理装置

Publications (2)

Publication Number Publication Date
JP2020077735A JP2020077735A (ja) 2020-05-21
JP7088810B2 true JP7088810B2 (ja) 2022-06-21

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JP2018209656A Active JP7088810B2 (ja) 2018-11-07 2018-11-07 基板処理方法および基板処理装置

Country Status (5)

Country Link
JP (1) JP7088810B2 (ko)
KR (2) KR102572925B1 (ko)
CN (1) CN112997279B (ko)
TW (1) TWI727461B (ko)
WO (1) WO2020095598A1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102421919B1 (ko) * 2019-12-27 2022-07-18 가부시키가이샤 스크린 홀딩스 기판 처리 장치, 기판 처리 방법, 기판 처리 시스템, 및 학습용 데이터의 생성 방법
JP7505439B2 (ja) * 2021-04-12 2024-06-25 三菱電機株式会社 半導体製造装置および半導体装置の製造方法
JP2023042255A (ja) * 2021-09-14 2023-03-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002217159A (ja) 2001-01-17 2002-08-02 Sony Corp 半導体基板の洗浄装置
JP2007165629A (ja) 2005-12-14 2007-06-28 Matsushita Electric Ind Co Ltd エッチング方法及びエッチング装置
JP2007189162A (ja) 2006-01-16 2007-07-26 Renesas Technology Corp 半導体装置の製造方法
JP2013175677A (ja) 2012-02-27 2013-09-05 Tokyo Electron Ltd 液処理装置、液処理方法及び記憶媒体
JP2016184662A (ja) 2015-03-26 2016-10-20 株式会社ディスコ 洗浄装置
JP2018147923A (ja) 2017-03-01 2018-09-20 東京エレクトロン株式会社 基板処理装置および基板処理方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW346649B (en) * 1996-09-24 1998-12-01 Tokyo Electron Co Ltd Method for wet etching a film
JP3434750B2 (ja) * 1999-09-30 2003-08-11 Ｎｅｃエレクトロニクス株式会社 洗浄装置のライン構成及びその設計方法
KR100513276B1 (ko) * 2003-05-23 2005-09-09 삼성전자주식회사 웨이퍼 고정 스핀 척
JP4324527B2 (ja) * 2004-09-09 2009-09-02 東京エレクトロン株式会社 基板洗浄方法及び現像装置
JP4527660B2 (ja) * 2005-06-23 2010-08-18 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2007311439A (ja) * 2006-05-17 2007-11-29 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP5270263B2 (ja) * 2008-08-29 2013-08-21 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP5715837B2 (ja) * 2011-01-28 2015-05-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP5716696B2 (ja) * 2012-03-05 2015-05-13 東京エレクトロン株式会社 液処理装置、液処理方法及びコンピュータ読取可能な記憶媒体
JP5894897B2 (ja) * 2012-09-28 2016-03-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6271304B2 (ja) * 2013-03-29 2018-01-31 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP6066873B2 (ja) * 2013-09-10 2017-01-25 東京エレクトロン株式会社 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
JP6308910B2 (ja) * 2013-11-13 2018-04-11 東京エレクトロン株式会社 基板洗浄方法、基板洗浄システムおよび記憶媒体
KR102030681B1 (ko) * 2014-09-02 2019-10-10 주식회사 제우스 기판 액처리 장치 및 기판 액처리 방법
JP6845696B2 (ja) * 2016-02-25 2021-03-24 芝浦メカトロニクス株式会社 基板処理装置、基板処理方法及び基板の製造方法
WO2018159193A1 (ja) * 2017-02-28 2018-09-07 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002217159A (ja) 2001-01-17 2002-08-02 Sony Corp 半導体基板の洗浄装置
JP2007165629A (ja) 2005-12-14 2007-06-28 Matsushita Electric Ind Co Ltd エッチング方法及びエッチング装置
JP2007189162A (ja) 2006-01-16 2007-07-26 Renesas Technology Corp 半導体装置の製造方法
JP2013175677A (ja) 2012-02-27 2013-09-05 Tokyo Electron Ltd 液処理装置、液処理方法及び記憶媒体
JP2016184662A (ja) 2015-03-26 2016-10-20 株式会社ディスコ 洗浄装置
JP2018147923A (ja) 2017-03-01 2018-09-20 東京エレクトロン株式会社 基板処理装置および基板処理方法

Also Published As

Publication number Publication date
KR102572925B1 (ko) 2023-08-30
KR20230129580A (ko) 2023-09-08
CN112997279B (zh) 2024-08-27
TWI727461B (zh) 2021-05-11
TW202025280A (zh) 2020-07-01
CN112997279A (zh) 2021-06-18
KR102609673B1 (ko) 2023-12-04
KR20210066897A (ko) 2021-06-07
JP2020077735A (ja) 2020-05-21
WO2020095598A1 (ja) 2020-05-14

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