JP7072383B2 - 比例式熱流体送達システムを使用した基板キャリア - Google Patents

比例式熱流体送達システムを使用した基板キャリア Download PDF

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Publication number
JP7072383B2
JP7072383B2 JP2017505105A JP2017505105A JP7072383B2 JP 7072383 B2 JP7072383 B2 JP 7072383B2 JP 2017505105 A JP2017505105 A JP 2017505105A JP 2017505105 A JP2017505105 A JP 2017505105A JP 7072383 B2 JP7072383 B2 JP 7072383B2
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fluid
heat exchanger
valve
pressure
temperature
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JP2018503965A (ja
JP2018503965A5 (enExample
Inventor
フィリップ クリミナーレ，
ジャスティン ファイ，
ダン エー． マロール，
セルジオ フクダ ショージ，
ブラッド エル． メイズ，
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Applied Materials Inc
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Applied Materials Inc
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Priority to JP2021078249A priority Critical patent/JP7301903B2/ja
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Publication of JP7072383B2 publication Critical patent/JP7072383B2/ja
Priority to JP2023101195A priority patent/JP7649818B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Control Of Temperature (AREA)
JP2017505105A 2014-11-26 2015-11-20 比例式熱流体送達システムを使用した基板キャリア Active JP7072383B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2021078249A JP7301903B2 (ja) 2014-11-26 2021-05-06 比例式熱流体送達システムを使用した基板キャリア
JP2023101195A JP7649818B2 (ja) 2014-11-26 2023-06-20 比例式熱流体送達システムを使用した基板キャリア

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/555,467 2014-11-26
US14/555,467 US10490429B2 (en) 2014-11-26 2014-11-26 Substrate carrier using a proportional thermal fluid delivery system
PCT/US2015/062010 WO2016085826A1 (en) 2014-11-26 2015-11-20 Substrate carrier using a proportional thermal fluid delivery system

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2021078249A Division JP7301903B2 (ja) 2014-11-26 2021-05-06 比例式熱流体送達システムを使用した基板キャリア

Publications (3)

Publication Number Publication Date
JP2018503965A JP2018503965A (ja) 2018-02-08
JP2018503965A5 JP2018503965A5 (enExample) 2018-12-27
JP7072383B2 true JP7072383B2 (ja) 2022-05-20

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JP2017505105A Active JP7072383B2 (ja) 2014-11-26 2015-11-20 比例式熱流体送達システムを使用した基板キャリア
JP2021078249A Active JP7301903B2 (ja) 2014-11-26 2021-05-06 比例式熱流体送達システムを使用した基板キャリア
JP2023101195A Active JP7649818B2 (ja) 2014-11-26 2023-06-20 比例式熱流体送達システムを使用した基板キャリア

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JP2021078249A Active JP7301903B2 (ja) 2014-11-26 2021-05-06 比例式熱流体送達システムを使用した基板キャリア
JP2023101195A Active JP7649818B2 (ja) 2014-11-26 2023-06-20 比例式熱流体送達システムを使用した基板キャリア

Country Status (6)

Country Link
US (2) US10490429B2 (enExample)
JP (3) JP7072383B2 (enExample)
KR (2) KR102577570B1 (enExample)
CN (1) CN106663648B (enExample)
TW (2) TWI710044B (enExample)
WO (1) WO2016085826A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106229284A (zh) * 2016-07-19 2016-12-14 武汉新芯集成电路制造有限公司 一种点阵式控温静电吸附盘
JP6792368B2 (ja) * 2016-07-25 2020-11-25 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置、基板処理装置および熱処理方法
US10366867B2 (en) * 2016-08-19 2019-07-30 Applied Materials, Inc. Temperature measurement for substrate carrier using a heater element array
CN107367131A (zh) * 2017-09-04 2017-11-21 浙江恒宇农业开发有限公司 一种冷冻干燥榴莲烘干仓控温系统
KR102458733B1 (ko) 2018-01-09 2022-10-27 삼성디스플레이 주식회사 플라즈마 처리 장치
US10510564B2 (en) * 2018-01-10 2019-12-17 Lam Research Corporation Dynamic coolant mixing manifold
CN110159928B (zh) * 2018-02-13 2021-04-20 辛耘企业股份有限公司 流体控制装置
JP7101023B2 (ja) * 2018-04-03 2022-07-14 東京エレクトロン株式会社 温調方法
KR102823092B1 (ko) * 2018-11-20 2025-06-19 램 리써치 코포레이션 반도체 제조 시 이중-상 (dual-phase) 냉각
KR102639158B1 (ko) * 2019-07-23 2024-02-22 삼성전자주식회사 웨이퍼 처리 장치 및 이를 이용한 웨이퍼 처리 방법
US12278094B2 (en) * 2020-05-08 2025-04-15 Applied Materials, Inc. Methods and apparatus for processing a substrate
DE102020002962B4 (de) * 2020-05-18 2025-03-13 Att Advanced Temperature Test Systems Gmbh Temperiervorrichtung, System und Verfahren zum Temperieren eines Probertisches für Halbleiterwafer und/oder Hybride
US11972971B2 (en) * 2021-03-05 2024-04-30 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer lift pin system
JP7580320B2 (ja) 2021-03-26 2024-11-11 東京エレクトロン株式会社 基板処理装置および温度制御方法
CN113013071B (zh) * 2021-03-31 2024-05-17 北京北方华创微电子装备有限公司 半导体工艺设备中的温度控制装置及方法
US20230060192A1 (en) * 2021-09-02 2023-03-02 Entegris, Inc. Methods and apparatus for processing an electrostatic chuck
KR20230091794A (ko) * 2021-12-16 2023-06-23 에이에스엠 아이피 홀딩 비.브이. 반도체 처리 시스템 로드 록의 이슬점 감지
JP2025524325A (ja) * 2022-07-11 2025-07-30 エーエスエムエル ネザーランズ ビー．ブイ． 基板ホルダ、リソグラフィ装置、コンピュータプログラム及び方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000193106A (ja) 1998-12-25 2000-07-14 Advance Denki Kogyo Kk 流量コントロ―ルバルブ
JP2002276845A (ja) 2001-03-15 2002-09-25 Asahi Organic Chem Ind Co Ltd 調節弁
JP2007107606A (ja) 2005-10-13 2007-04-26 Ckd Corp 流体制御弁
JP2007299344A (ja) 2006-05-08 2007-11-15 Ckd Corp 流量制御装置
JP2011142300A (ja) 2009-12-09 2011-07-21 Tokyo Electron Ltd 基板処理装置、基板処理方法及びこの基板処理方法を実行させるためのプログラムを記録した記録媒体
JP2012508991A (ja) 2008-11-12 2012-04-12 ラム リサーチ コーポレーション 液体を制御された複数領域基板支持体による改良基板温度制御
JP2013519192A (ja) 2010-01-29 2013-05-23 アプライド マテリアルズ インコーポレイテッド プラズマ処理装置のフィードフォワード温度制御
JP2013534716A (ja) 2010-05-24 2013-09-05 ラム リサーチ コーポレーション 半導体基板サポートの温度制御のための装置および方法

Family Cites Families (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3360198A (en) 1966-05-27 1967-12-26 Robertshaw Controls Co Pressure regulator for diaphragm gas valves
US3584785A (en) * 1969-03-24 1971-06-15 Garrett Corp Electronic anti-ice control
US3654948A (en) 1970-11-02 1972-04-11 Honeywell Inc Balanced pressure regulator
CA973138A (en) * 1972-04-01 1975-08-19 Hisashi Motoyama Automatic temperature and humidity regulating apparatus
JPS48100747A (enExample) * 1972-04-01 1973-12-19
US4410030A (en) * 1972-10-04 1983-10-18 Skala Stephen F Pressure cooker with regulated vapor pressure
US4015615A (en) * 1975-06-13 1977-04-05 International Business Machines Corporation Fluid application system
US4090248A (en) * 1975-10-24 1978-05-16 Powers Regulator Company Supervisory and control system for environmental conditioning equipment
JPS604546B2 (ja) * 1975-11-04 1985-02-05 ヴアルツ アルフレート 放電燈ならびにその製造方法
US4535222A (en) * 1976-02-05 1985-08-13 Rockwell International Corporation Temperature control system
US4319628A (en) * 1979-07-13 1982-03-16 Southern California Gas Company Two liquid heat exchange system and safety valve to prevent contamination
US4367699A (en) * 1981-01-27 1983-01-11 Evc Associates Limited Partnership Boiling liquid engine cooling system
US4997677A (en) * 1987-08-31 1991-03-05 Massachusetts Institute Of Technology Vapor phase reactor for making multilayer structures
US4998862A (en) 1989-10-02 1991-03-12 Ingersoll-Rand Company Air compressor pressure regulating valve system
US5072781A (en) * 1990-07-30 1991-12-17 United Technologies Corporation Temperature control system
US5761023A (en) * 1996-04-25 1998-06-02 Applied Materials, Inc. Substrate support with pressure zones having reduced contact area and temperature feedback
US5911833A (en) * 1997-01-15 1999-06-15 Lam Research Corporation Method of in-situ cleaning of a chuck within a plasma chamber
EP0976013B1 (de) 1997-04-18 2003-02-12 ZF FRIEDRICHSHAFEN Aktiengesellschaft Druckregelventil
NL1006040C2 (nl) * 1997-05-13 1998-11-16 Spray Systems Europ Agrima Sse Luchtbevochtigingssysteem, werkwijze voor het bedrijven daarvan, alsmede toepassing daarvan voor het conditioneren van de lucht in een verf- of lakcabine.
JP3796332B2 (ja) * 1997-09-29 2006-07-12 シーケーディ株式会社 ミキシングによる純水温度の制御装置
DE20004366U1 (de) * 2000-03-10 2000-10-12 Heraeus Noblelight Gmbh, 63450 Hanau Strahlermodul zum Einsatz in ein Lampengehäuse
JP3921913B2 (ja) * 2000-03-13 2007-05-30 株式会社日立製作所 ウエハ処理装置およびウエハ製造方法
US6353210B1 (en) * 2000-04-11 2002-03-05 Applied Materials Inc. Correction of wafer temperature drift in a plasma reactor based upon continuous wafer temperature measurements using and in-situ wafer temperature optical probe
US6905792B2 (en) * 2000-10-13 2005-06-14 Honda Giken Kogyo Kabushiki Kaisha Cooling system and cooling process of fuel cell
US6739033B2 (en) * 2001-03-29 2004-05-25 Scimed Life Systems, Inc. Thermal regulation of a coated work-piece during the reconfiguration of the coated work-piece
US20030001510A1 (en) * 2001-06-27 2003-01-02 Christian Vahab Magneto-hydrodynamic power cell using atomic conversion of energy, plasma and field ionization
US7198073B2 (en) * 2002-07-26 2007-04-03 Gfi, Innovations Methodology and apparatus for storing and dispensing liquid components to create custom formulations
DE10244527B4 (de) * 2002-09-25 2013-05-08 Zf Friedrichshafen Ag Proportional-Druckregelventil
AU2003300845B2 (en) * 2002-12-09 2008-04-10 Hudson Technologies, Inc. Method and apparatus for optimizing refrigeration systems
JP3801570B2 (ja) 2003-02-24 2006-07-26 Ｓｍｃ株式会社 流量制御装置
US20040261712A1 (en) * 2003-04-25 2004-12-30 Daisuke Hayashi Plasma processing apparatus
CN100454200C (zh) * 2003-06-09 2009-01-21 喜开理株式会社 相对压力控制系统和相对流量控制系统
US7237578B2 (en) * 2004-07-21 2007-07-03 Nordson Corporation Rechargeable dispensing head
US7115833B2 (en) * 2004-11-03 2006-10-03 The Esab Group, Inc. Metering system and method for supplying gas to a torch
KR20070089197A (ko) * 2004-11-22 2007-08-30 어플라이드 머티어리얼스, 인코포레이티드 배치 처리 챔버를 사용한 기판 처리 기기
US7435447B2 (en) * 2005-02-15 2008-10-14 Tokyo Electron Limited Method and system for determining flow conditions in a high pressure processing system
US20060255012A1 (en) * 2005-05-10 2006-11-16 Gunilla Jacobson Removal of particles from substrate surfaces using supercritical processing
JP2007024069A (ja) * 2005-07-12 2007-02-01 Advance Denki Kogyo Kk 空圧式流量調節弁
US8092638B2 (en) * 2005-10-11 2012-01-10 Applied Materials Inc. Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution
JP4854317B2 (ja) * 2006-01-31 2012-01-18 東京エレクトロン株式会社 基板処理方法
JP4933789B2 (ja) * 2006-02-13 2012-05-16 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
US8343280B2 (en) * 2006-03-28 2013-01-01 Tokyo Electron Limited Multi-zone substrate temperature control system and method of operating
US7841385B2 (en) * 2006-06-26 2010-11-30 International Business Machines Corporation Dual-chamber fluid pump for a multi-fluid electronics cooling system and method
US8151872B2 (en) * 2007-03-16 2012-04-10 Centipede Systems, Inc. Method and apparatus for controlling temperature
US20090095221A1 (en) * 2007-10-16 2009-04-16 Alexander Tam Multi-gas concentric injection showerhead
US7976631B2 (en) * 2007-10-16 2011-07-12 Applied Materials, Inc. Multi-gas straight channel showerhead
PL2215406T3 (pl) * 2007-10-22 2018-03-30 Bertelli & Partners S.R.L. Urządzenie z wielofunkcyjnym zaworem bezpieczeństwa z wbudowanym proporcjonalnym regulatorem ciśnienia
US7972444B2 (en) * 2007-11-07 2011-07-05 Mattson Technology, Inc. Workpiece support with fluid zones for temperature control
WO2009085672A2 (en) * 2007-12-21 2009-07-09 Lam Research Corporation Fabrication of a silicon structure and deep silicon etch with profile control
JP5200551B2 (ja) * 2008-01-18 2013-06-05 東京エレクトロン株式会社 気化原料供給装置、成膜装置及び気化原料供給方法
JP2009202921A (ja) * 2008-02-29 2009-09-10 Atsense Inc 燃料混合装置
US8726838B2 (en) 2010-03-31 2014-05-20 Intermolecular, Inc. Combinatorial plasma enhanced deposition and etch techniques
US8532832B2 (en) 2008-09-23 2013-09-10 Be Aerospace, Inc. Method and apparatus for thermal exchange with two-phase media
DE102008062290A1 (de) * 2008-12-15 2010-06-24 Abb Technology Ag Verfahren zur Diagnose des Verschleißzustandes einer Ventilanordnung zur Steuerung eines Prozessmediumflusses
KR101691044B1 (ko) * 2009-02-04 2016-12-29 맷슨 테크놀로지, 인크. 기판의 표면에 걸친 온도 프로파일을 방사상으로 튜닝하는 정전 척 시스템 및 방법
US7985188B2 (en) * 2009-05-13 2011-07-26 Cv Holdings Llc Vessel, coating, inspection and processing apparatus
US8278224B1 (en) * 2009-09-24 2012-10-02 Novellus Systems, Inc. Flowable oxide deposition using rapid delivery of process gases
US8361231B2 (en) * 2009-09-30 2013-01-29 Ckd Corporation Liquid vaporization system
JP5519992B2 (ja) * 2009-10-14 2014-06-11 東京エレクトロン株式会社 基板載置台の温度制御システム及びその温度制御方法
US8742665B2 (en) * 2009-11-18 2014-06-03 Applied Materials, Inc. Plasma source design
US8916793B2 (en) * 2010-06-08 2014-12-23 Applied Materials, Inc. Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow
WO2011149615A2 (en) * 2010-05-24 2011-12-01 Applied Materials, Inc. Hybrid hotwire chemical vapor deposition and plasma enhanced chemical vapor deposition method and apparatus
US8847103B2 (en) * 2010-07-16 2014-09-30 Hypertherm, Inc. Electronic pressure regulator
US8580693B2 (en) 2010-08-27 2013-11-12 Applied Materials, Inc. Temperature enhanced electrostatic chucking in plasma processing apparatus
US9719169B2 (en) * 2010-12-20 2017-08-01 Novellus Systems, Inc. System and apparatus for flowable deposition in semiconductor fabrication
JP5703038B2 (ja) * 2011-01-26 2015-04-15 株式会社日立ハイテクノロジーズ プラズマ処理装置
CN103123906A (zh) 2011-11-18 2013-05-29 中芯国际集成电路制造(北京)有限公司 用于处理晶圆的反应装置、静电吸盘和晶圆温度控制方法
US10537013B2 (en) 2012-04-23 2020-01-14 Applied Materials, Inc. Distributed electro-static chuck cooling
TW201422155A (zh) * 2012-07-06 2014-06-16 Arigos Biomedical Inc 以氣體灌注快速冷卻與升溫預防玻璃質化組織受熱-力破壞的方法與裝置
US9916967B2 (en) * 2013-03-13 2018-03-13 Applied Materials, Inc. Fast response fluid control system
JP6287139B2 (ja) * 2013-12-04 2018-03-07 富士通株式会社 電子システム及び電子システムの制御方法
US10079165B2 (en) * 2014-05-20 2018-09-18 Applied Materials, Inc. Electrostatic chuck with independent zone cooling and reduced crosstalk

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000193106A (ja) 1998-12-25 2000-07-14 Advance Denki Kogyo Kk 流量コントロ―ルバルブ
JP2002276845A (ja) 2001-03-15 2002-09-25 Asahi Organic Chem Ind Co Ltd 調節弁
JP2007107606A (ja) 2005-10-13 2007-04-26 Ckd Corp 流体制御弁
JP2007299344A (ja) 2006-05-08 2007-11-15 Ckd Corp 流量制御装置
JP2012508991A (ja) 2008-11-12 2012-04-12 ラム リサーチ コーポレーション 液体を制御された複数領域基板支持体による改良基板温度制御
JP2011142300A (ja) 2009-12-09 2011-07-21 Tokyo Electron Ltd 基板処理装置、基板処理方法及びこの基板処理方法を実行させるためのプログラムを記録した記録媒体
JP2013519192A (ja) 2010-01-29 2013-05-23 アプライド マテリアルズ インコーポレイテッド プラズマ処理装置のフィードフォワード温度制御
JP2013534716A (ja) 2010-05-24 2013-09-05 ラム リサーチ コーポレーション 半導体基板サポートの温度制御のための装置および方法

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