JP7069331B2 - ペルヒドロポリシラザン組成物及びそれを使用する窒化物膜の形成方法 - Google Patents
ペルヒドロポリシラザン組成物及びそれを使用する窒化物膜の形成方法 Download PDFInfo
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- JP7069331B2 JP7069331B2 JP2020543889A JP2020543889A JP7069331B2 JP 7069331 B2 JP7069331 B2 JP 7069331B2 JP 2020543889 A JP2020543889 A JP 2020543889A JP 2020543889 A JP2020543889 A JP 2020543889A JP 7069331 B2 JP7069331 B2 JP 7069331B2
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- IHMQNZFRFVYNDS-UHFFFAOYSA-N tert-butyl n-amino-n-methylcarbamate Chemical compound CN(N)C(=O)OC(C)(C)C IHMQNZFRFVYNDS-UHFFFAOYSA-N 0.000 description 1
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- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 1
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- 150000003568 thioethers Chemical class 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Images
Classifications
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
- H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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- Chemical & Material Sciences (AREA)
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US201862633195P | 2018-02-21 | 2018-02-21 | |
US62/633,195 | 2018-02-21 | ||
PCT/US2019/019000 WO2019165102A1 (en) | 2018-02-21 | 2019-02-21 | Perhydropolysilazane compositions and methods for forming nitride films using same |
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JP7069331B2 true JP7069331B2 (ja) | 2022-05-17 |
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US (1) | US20210102092A1 (zh) |
EP (1) | EP3755738A4 (zh) |
JP (1) | JP7069331B2 (zh) |
KR (2) | KR102400945B1 (zh) |
CN (2) | CN114773604B (zh) |
SG (1) | SG11202007793RA (zh) |
TW (1) | TWI793262B (zh) |
WO (1) | WO2019165102A1 (zh) |
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SG11202007789UA (en) | 2018-02-21 | 2020-09-29 | Air Liquide | Perhydropolysilazane compositions and methods for forming oxide films using same |
US11450526B2 (en) * | 2018-05-30 | 2022-09-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Cyclic spin-on coating process for forming dielectric material |
JP6783888B2 (ja) * | 2019-03-15 | 2020-11-11 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置及び記録媒体 |
WO2022061410A1 (en) * | 2020-09-24 | 2022-03-31 | Nanokote Pty Ltd | Coating process |
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- 2019-02-19 TW TW108105474A patent/TWI793262B/zh active
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- 2019-02-21 EP EP19757206.8A patent/EP3755738A4/en active Pending
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- 2019-02-21 KR KR1020227015930A patent/KR102414008B1/ko active IP Right Grant
- 2019-02-21 WO PCT/US2019/019000 patent/WO2019165102A1/en unknown
- 2019-02-21 US US16/971,873 patent/US20210102092A1/en not_active Abandoned
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JP2013162072A (ja) | 2012-02-08 | 2013-08-19 | Az Electronic Materials Mfg Co Ltd | 無機ポリシラザン樹脂 |
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KR102414008B1 (ko) | 2022-06-27 |
TWI793262B (zh) | 2023-02-21 |
CN111918905A (zh) | 2020-11-10 |
KR20220066429A (ko) | 2022-05-24 |
EP3755738A4 (en) | 2022-03-02 |
SG11202007793RA (en) | 2020-09-29 |
JP2021513953A (ja) | 2021-06-03 |
KR20200120714A (ko) | 2020-10-21 |
US20210102092A1 (en) | 2021-04-08 |
EP3755738A1 (en) | 2020-12-30 |
CN114773604B (zh) | 2023-08-15 |
CN111918905B (zh) | 2022-05-24 |
WO2019165102A1 (en) | 2019-08-29 |
KR102400945B1 (ko) | 2022-05-20 |
CN114773604A (zh) | 2022-07-22 |
TW201938651A (zh) | 2019-10-01 |
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