JP7063259B2 - シリコンエピタキシャルウェーハの製造方法 - Google Patents

シリコンエピタキシャルウェーハの製造方法 Download PDF

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JP7063259B2
JP7063259B2 JP2018245109A JP2018245109A JP7063259B2 JP 7063259 B2 JP7063259 B2 JP 7063259B2 JP 2018245109 A JP2018245109 A JP 2018245109A JP 2018245109 A JP2018245109 A JP 2018245109A JP 7063259 B2 JP7063259 B2 JP 7063259B2
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Prior art keywords
wafer
epitaxial layer
less
silicon
manufacturing
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JP2018245109A
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JP2020107730A (ja
JP2020107730A5 (https=
Inventor
昌幸 石橋
吉田みどり
大介 丸岡
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Sumco Corp
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Sumco Corp
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Priority to JP2018245109A priority Critical patent/JP7063259B2/ja
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to US17/296,281 priority patent/US11990336B2/en
Priority to KR1020217016881A priority patent/KR102508213B1/ko
Priority to PCT/JP2019/030722 priority patent/WO2020136973A1/ja
Priority to CN201980086171.1A priority patent/CN113544817B/zh
Priority to DE112019006437.1T priority patent/DE112019006437T5/de
Publication of JP2020107730A publication Critical patent/JP2020107730A/ja
Publication of JP2020107730A5 publication Critical patent/JP2020107730A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/14—Preparing bulk and homogeneous wafers by setting crystal orientation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2018245109A 2018-12-27 2018-12-27 シリコンエピタキシャルウェーハの製造方法 Active JP7063259B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2018245109A JP7063259B2 (ja) 2018-12-27 2018-12-27 シリコンエピタキシャルウェーハの製造方法
KR1020217016881A KR102508213B1 (ko) 2018-12-27 2019-08-05 실리콘 에피택셜 웨이퍼의 제조 방법 및 실리콘 에피택셜 웨이퍼
PCT/JP2019/030722 WO2020136973A1 (ja) 2018-12-27 2019-08-05 シリコンエピタキシャルウェーハの製造方法及びシリコンエピタキシャルウェーハ
CN201980086171.1A CN113544817B (zh) 2018-12-27 2019-08-05 硅外延晶片的制造方法和硅外延晶片
US17/296,281 US11990336B2 (en) 2018-12-27 2019-08-05 Silicon epitaxial wafer production method and silicon epitaxial wafer
DE112019006437.1T DE112019006437T5 (de) 2018-12-27 2019-08-05 Siliziumepitaxialwaferherstellungsverfahren und siliziumepitaxialwafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018245109A JP7063259B2 (ja) 2018-12-27 2018-12-27 シリコンエピタキシャルウェーハの製造方法

Publications (3)

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JP2020107730A JP2020107730A (ja) 2020-07-09
JP2020107730A5 JP2020107730A5 (https=) 2021-03-04
JP7063259B2 true JP7063259B2 (ja) 2022-05-09

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US (1) US11990336B2 (https=)
JP (1) JP7063259B2 (https=)
KR (1) KR102508213B1 (https=)
CN (1) CN113544817B (https=)
DE (1) DE112019006437T5 (https=)
WO (1) WO2020136973A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7629154B2 (ja) * 2022-01-26 2025-02-13 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法
US20230326752A1 (en) * 2022-04-08 2023-10-12 Sumco Corporation Flat epitaxial wafer having minimal thickness variation
JP2025141255A (ja) * 2024-03-15 2025-09-29 信越半導体株式会社 シリコン基板の熱処理方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007204286A (ja) 2006-01-31 2007-08-16 Sumco Corp エピタキシャルウェーハの製造方法
JP2008091891A (ja) 2006-09-05 2008-04-17 Sumco Corp エピタキシャルシリコンウェーハおよびその製造方法
WO2009150896A1 (ja) 2008-06-10 2009-12-17 株式会社Sumco シリコンエピタキシャルウェーハ及びその製造方法
JP2012043892A (ja) 2010-08-17 2012-03-01 Shin Etsu Handotai Co Ltd シリコンエピタキシャルウェーハの製造方法およびシリコンエピタキシャルウェーハ
JP2015162522A (ja) 2014-02-26 2015-09-07 株式会社Sumco エピタキシャルシリコンウェーハの製造方法及びエピタキシャルシリコンウェーハ

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6362510B1 (en) * 1998-12-07 2002-03-26 Advanced Micro Devices, Inc. Semiconductor topography having improved active device isolation and reduced dopant migration
JP2004339003A (ja) * 2003-05-15 2004-12-02 Shin Etsu Handotai Co Ltd シリコンエピタキシャルウェーハ及びシリコンエピタキシャルウェーハの製造方法
JP2009302140A (ja) 2008-06-10 2009-12-24 Sumco Corp シリコンエピタキシャルウェーハ及びその製造方法
JP4887418B2 (ja) * 2009-12-14 2012-02-29 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法
JP6287778B2 (ja) * 2014-11-21 2018-03-07 信越半導体株式会社 エピタキシャルウェーハの製造方法
JP6459132B2 (ja) * 2016-08-31 2019-01-30 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法、並びに、欠陥識別方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007204286A (ja) 2006-01-31 2007-08-16 Sumco Corp エピタキシャルウェーハの製造方法
JP2008091891A (ja) 2006-09-05 2008-04-17 Sumco Corp エピタキシャルシリコンウェーハおよびその製造方法
WO2009150896A1 (ja) 2008-06-10 2009-12-17 株式会社Sumco シリコンエピタキシャルウェーハ及びその製造方法
JP2012043892A (ja) 2010-08-17 2012-03-01 Shin Etsu Handotai Co Ltd シリコンエピタキシャルウェーハの製造方法およびシリコンエピタキシャルウェーハ
JP2015162522A (ja) 2014-02-26 2015-09-07 株式会社Sumco エピタキシャルシリコンウェーハの製造方法及びエピタキシャルシリコンウェーハ

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Publication number Publication date
US11990336B2 (en) 2024-05-21
JP2020107730A (ja) 2020-07-09
US20220020585A1 (en) 2022-01-20
KR20210082252A (ko) 2021-07-02
DE112019006437T5 (de) 2021-09-09
WO2020136973A1 (ja) 2020-07-02
KR102508213B1 (ko) 2023-03-08
CN113544817B (zh) 2024-07-09
CN113544817A (zh) 2021-10-22

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