JP7037415B2 - 集積回路素子及びその製造方法 - Google Patents
集積回路素子及びその製造方法 Download PDFInfo
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- JP7037415B2 JP7037415B2 JP2018063862A JP2018063862A JP7037415B2 JP 7037415 B2 JP7037415 B2 JP 7037415B2 JP 2018063862 A JP2018063862 A JP 2018063862A JP 2018063862 A JP2018063862 A JP 2018063862A JP 7037415 B2 JP7037415 B2 JP 7037415B2
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Description
絶縁ライナ126を形成するために、複数の第1コンタクトホールCAH及びジャンパコンタクトホール130Hが形成された結果物の露出表面をコンフォーマル(conformal)に覆う絶縁薄膜を形成した後、絶縁薄膜をエッチバックし、複数の第1コンタクトホールCAH及びジャンパコンタクトホール130Hを介して複数のソース/ドレイン領域172を露出する。絶縁ライナ126は、シリコン窒化膜からなるが、それに限定されるものではない。
110 基板
110M 基板の主面
112 素子分離膜
118、318 ゲート絶縁膜
119 ゲート導電層
120、220、320、420、620 絶縁分離構造物
120A 埋め立て分離部
120B、220P 突出分離部
120BT、320BT、420BT 絶縁分離構造物の底面
120S、220S、320S 絶縁分離構造物の側壁
120T 絶縁分離構造物の上面
126 絶縁ライナ
128 金属シリサイド膜
130、530、630、730、830 ジャンパコンタクト
130H ジャンパコンタクトホール
130T ジャンパコンタクトの上面
132 垂直延長部
134 水平延長部
162 絶縁スペーサ
164 ゲート間絶縁膜
172 ソース/ドレイン領域
180 ゲート絶縁キャッピング層
190、198 層間絶縁膜
220M メイン分離部
308、D14 ダミーゲート絶縁膜
320T、420T 絶縁分離構造物の上面
BN セルバウンダリ
CA、CA1、CA2 ソース/ドレインコンタクトプラグ
CAH 第1コンタクトホール
CAT ソース/ドレインコンタクトプラグの上面
CB ゲートコンタクトプラグ
CBT ゲートコンタクトプラグの上面
CL 導電膜
CL1 導電性バリア膜
CL2 埋め立て金属膜
D16、DGL ダミーゲートライン
D18 ダミーゲート絶縁キャッピング層
DGL ダミーゲートライン
DGS ダミーゲート構造体
DTA 素子間分離領域
FA フィン型活性領域
FT フィン型活性領域の上面
GL ゲートライン
GL1、GL2 分離ゲートライン
GS ゲート構造体
H1、H2、H3 ホール
LC ロジックセル
LV1 最低面のレベル
LV2 基板の主面のレベル
LV3 フィン型活性領域の上面のレベル
LV4 絶縁分離構造物の最上面のレベル
LV5 ゲートラインの最上面のレベル
LV6 ゲート絶縁キャッピング層の最上面のレベル
M1、M2、M3、M4 マスクパターン
ML 導電ライン
R1 リセス領域
RX1、RX2 第1、第2素子領域
S1 分離空間
S2 絶縁空間
SP1、SP3 ゲート空間
SP2 キャッピング空間
T1 フィン分離トレンチ
VC1、VC2 第1、第2ビアコンタクトプラグ
VDD 電源線
VSS 接地線
Claims (25)
- 基板上に、第1方向に延長されたフィン型活性領域と、
前記フィン型活性領域上に、前記第1方向と交差する第2方向に延長された絶縁分離構造物と、
前記絶縁分離構造物を挟んで互いに離隔され、前記絶縁分離構造物と一直線上の前記第2方向に延長された1対の分離ゲートラインと、
前記フィン型活性領域上に配置され、前記絶縁分離構造物を挟んで互いに離隔された1対のソース/ドレイン領域と、
前記絶縁分離構造物の上部に配置され、前記1対のソース/ドレイン領域間に連結されたジャンパコンタクトと、を備えることを特徴とする集積回路素子。 - 前記ジャンパコンタクトは、
前記1対のソース/ドレイン領域にそれぞれ連結された1対の垂直延長部と、
前記絶縁分離構造物の上部に配置され、前記第1方向に延長された水平延長部と、を含むことを特徴とする請求項1に記載の集積回路素子。 - 前記水平延長部は、前記絶縁分離構造物に垂直方向にオーバーラップし、前記1対の分離ゲートラインに垂直方向にオーバーラップしないことを特徴とする請求項2に記載の集積回路素子。
- 前記フィン型活性領域は、前記フィン型活性領域の上面よりも低いレベルの底面を有するフィン分離トレンチを含み、
前記絶縁分離構造物は、
前記フィン分離トレンチを充填する埋め立て分離部と、
前記埋め立て分離部に一体に連結され、前記フィン型活性領域から遠くなる方向に延長されて前記フィン型活性領域の上面上に突出した突出分離部と、を含むことを特徴とする請求項1に記載の集積回路素子。 - 前記絶縁分離構造物は、
前記フィン型活性領域の上面に対面する底面と、
前記ジャンパコンタクトに対面する上面と、を有することを特徴とする請求項1に記載の集積回路素子。 - 前記絶縁分離構造物の最低面のレベルは、前記1対のソース/ドレイン領域の各々の底面のレベルよりも低いことを特徴とする請求項1に記載の集積回路素子。
- 前記絶縁分離構造物の最低面のレベルは、前記1対のソース/ドレイン領域の各々の底面のレベルよりも高いことを特徴とする請求項1に記載の集積回路素子。
- 前記ジャンパコンタクトは、
前記1対のソース/ドレイン領域にそれぞれ連結された1対の垂直延長部と、
前記1対の垂直延長部に一体に連結された水平延長部と、を含み、
前記絶縁分離構造物は、前記1対の垂直延長部間に介在し、前記水平延長部で覆われることを特徴とする請求項1に記載の集積回路素子。 - 前記1対の分離ゲートラインの上面を覆う1対のゲート絶縁キャッピング層を更に含み、
前記絶縁分離構造物の最上面のレベルは、
前記1対の分離ゲートラインの各々の最上面のレベルよりも高く、
前記1対のゲート絶縁キャッピング層の各々の最上面のレベルよりも低いことを特徴とする請求項1に記載の集積回路素子。 - 前記絶縁分離構造物は、単一絶縁膜からなることを特徴とする請求項1に記載の集積回路素子。
- 前記絶縁分離構造物は、複数の絶縁膜の組み合わせからなることを特徴とする請求項1に記載の集積回路素子。
- 前記絶縁分離構造物は、エアギャップを含むことを特徴とする請求項1に記載の集積回路素子。
- 前記1対の分離ゲートラインのうちの1本の第1分離ゲートラインは、正常なゲートラインであり、他の1本の第2分離ゲートラインは、ダミーゲートラインであることを特徴とする請求項1に記載の集積回路素子。
- 前記第1分離ゲートライン上に、前記第1分離ゲートラインに交差する方向に延長された導電ラインと、
前記第1分離ゲートラインと前記導電ラインとを互いに連結するように、前記第1分離ゲートラインと前記導電ラインとの間に垂直方向に延長されたビアコンタクトプラグと、を更に含むことを特徴とする請求項13に記載の集積回路素子。 - 基板上に、第1方向に互いに平行に延長された複数のフィン型活性領域と、
前記複数のフィン型活性領域上に、前記第1方向と交差する第2方向に延長された絶縁分離構造物と、
前記絶縁分離構造物を挟んで互いに離隔され、前記絶縁分離構造物と一直線上の前記第2方向に延長された1対の分離ゲートラインと、
前記複数のフィン型活性領域上に形成された複数のソース/ドレイン領域と、
前記複数のソース/ドレイン領域のうち、前記絶縁分離構造物を挟んで互いに離隔された第1ソース/ドレイン領域と第2ソース/ドレイン領域とを互いに連結するように、前記第1ソース/ドレイン領域と第2ソース/ドレイン領域との間に、前記絶縁分離構造物の上部を通過して前記第1方向に延長されたジャンパコンタクトと、を備えることを特徴とする集積回路素子。 - 前記第1ソース/ドレイン領域と前記ジャンパコンタクトとの間、及び第2ソース/ドレイン領域と前記ジャンパコンタクトとの間にそれぞれ形成された複数の金属シリサイド膜を更に含むことを特徴とする請求項15に記載の集積回路素子。
- 前記複数のソース/ドレイン領域のうち、前記第1ソース/ドレイン領域及び第2ソース/ドレイン領域から離隔された第3ソース/ドレイン領域に連結され、前記第3ソース/ドレイン領域から前記基板に対して遠くなる方向に延長されたソース/ドレインコンタクトプラグを更に含み、
前記ジャンパコンタクトの上面と前記ソース/ドレインコンタクトプラグの上面とは、同一レベルに配置されることを特徴とする請求項15に記載の集積回路素子。 - 前記基板は、
前記複数のフィン型活性領域のうちの一部のフィン型活性領域が配置された第1素子領域と、
前記複数のフィン型活性領域のうちの他の一部のフィン型活性領域が配置された第2素子領域と、
前記第1素子領域と前記第2素子領域との間に介在する素子間分離領域と、を含み、
前記1対の分離ゲートラインのうちの第1分離ゲートラインは、前記第1素子領域及び前記素子間分離領域に位置し、
前記1対の分離ゲートラインのうちの第2分離ゲートライン、前記絶縁分離構造物、及び前記ジャンパコンタクトは、前記第2素子領域に位置することを特徴とする請求項15に記載の集積回路素子。 - 前記第2方向において、前記ジャンパコンタクトの第1長は、前記絶縁分離構造物の第2長よりも短いことを特徴とする請求項15に記載の集積回路素子。
- 前記絶縁分離構造物は、丸い凸面を有する上面を含み、
前記ジャンパコンタクトは、前記絶縁分離構造物の丸い凸面に接して前記丸い凸面のプロファイルに対応する形状の丸い凹面を有することを特徴とする請求項15に記載の集積回路素子。 - 基板上に、第1方向に延長されるフィン型活性領域を形成する段階と、
前記フィン型活性領域上に1対のソース/ドレイン領域を形成する段階と、
前記1対のソース/ドレイン領域の間に、前記第1方向と交差する第2方向に延長される絶縁分離構造物と、前記絶縁分離構造物を挟んで互いに離隔されて前記絶縁分離構造物と一直線上の前記第2方向に延長される1対の分離ゲートラインと、を含む構造物を形成する段階と、
前記絶縁分離構造物の上部に配置され、前記1対のソース/ドレイン領域間に連結されるジャンパコンタクトを形成する段階と、を有することを特徴とする集積回路素子の製造方法。 - 前記構造物を形成する段階は、
前記フィン型活性領域上に、前記第2方向に延長されるゲートラインを形成する段階と、
前記ゲートラインの一部を除去して分離空間を形成する段階と、
前記分離空間を充填する絶縁分離構造物を形成する段階と、を含むことを特徴とする請求項21に記載の集積回路素子の製造方法。 - 前記構造物を形成する段階は、
前記フィン型活性領域上に、前記第2方向に延長されるゲートラインを形成する段階と、
前記ゲートラインの一部を除去して分離空間を形成する段階と、
前記フィン型活性領域に、前記分離空間に連通するフィン分離トレンチを形成する段階と、
前記分離空間及び前記フィン分離トレンチを充填する絶縁分離構造物を形成する段階と、を含むことを特徴とする請求項21に記載の集積回路素子の製造方法。 - 前記構造物を形成する段階は、
前記フィン型活性領域上に、前記第2方向に延長されるダミーゲートラインを形成する段階と、
前記ダミーゲートラインの一部を除去して分離空間を形成する段階と、
前記分離空間を充填する絶縁分離構造物を形成する段階と、
前記ダミーゲートラインの残りの一部を除去して前記フィン型活性領域上にゲート空間を形成する段階と、
前記ゲート空間に1対の分離ゲートラインを形成する段階と、を含むことを特徴とする請求項21に記載の集積回路素子の製造方法。 - 前記ジャンパコンタクトを形成する段階は、
前記1対のソース/ドレイン領域及び前記絶縁分離構造物の両方を露出させるジャンパコンタクトホールを形成する段階と、
前記ジャンパコンタクトホール内に導電膜を形成する段階と、を含むことを特徴とする請求項21に記載の集積回路素子の製造方法。
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