JP7035277B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP7035277B2
JP7035277B2 JP2021514448A JP2021514448A JP7035277B2 JP 7035277 B2 JP7035277 B2 JP 7035277B2 JP 2021514448 A JP2021514448 A JP 2021514448A JP 2021514448 A JP2021514448 A JP 2021514448A JP 7035277 B2 JP7035277 B2 JP 7035277B2
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JP
Japan
Prior art keywords
waveguide
plasma
plasma processing
processing apparatus
dielectric
Prior art date
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Expired - Fee Related
Application number
JP2021514448A
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English (en)
Japanese (ja)
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JPWO2021152655A1 (https=
Inventor
仁 田村
紀彦 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Tech Corp
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Publication date
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Publication of JPWO2021152655A1 publication Critical patent/JPWO2021152655A1/ja
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32311—Circuits specially adapted for controlling the microwave discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/16—Dielectric waveguides, i.e. without a longitudinal conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2021514448A 2020-01-27 2020-01-27 プラズマ処理装置 Expired - Fee Related JP7035277B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/002737 WO2021152655A1 (ja) 2020-01-27 2020-01-27 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPWO2021152655A1 JPWO2021152655A1 (https=) 2021-08-05
JP7035277B2 true JP7035277B2 (ja) 2022-03-14

Family

ID=77078043

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021514448A Expired - Fee Related JP7035277B2 (ja) 2020-01-27 2020-01-27 プラズマ処理装置

Country Status (6)

Country Link
US (1) US20220359162A1 (https=)
JP (1) JP7035277B2 (https=)
KR (1) KR102521817B1 (https=)
CN (1) CN113454760B (https=)
TW (1) TWI802840B (https=)
WO (1) WO2021152655A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022157883A1 (ja) * 2021-01-21 2022-07-28 株式会社日立ハイテク プラズマ処理装置
JP7516674B2 (ja) * 2022-06-21 2024-07-16 株式会社日立ハイテク プラズマ処理装置および加熱装置
TWI899592B (zh) * 2022-10-19 2025-10-01 日商日立全球先端科技股份有限公司 電漿處理裝置
TW202514705A (zh) 2023-05-30 2025-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於將能量提供至具有多個功率信號輸入之電漿腔室的系統以及半導體處理系統
US20260011900A1 (en) * 2024-07-06 2026-01-08 Applied Materials, Inc. Wideband tem to tm01 mode converter for microwave plasma systems

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005235755A (ja) 2004-02-07 2005-09-02 Samsung Electronics Co Ltd マイクロウェーブ供給装置、それを用いたプラズマ工程装置及びプラズマ工程方法
JP2006324551A (ja) 2005-05-20 2006-11-30 Shibaura Mechatronics Corp プラズマ発生装置及びプラズマ処理装置
JP2012022917A (ja) 2010-07-15 2012-02-02 Tohoku Univ プラズマ処理装置及びプラズマ処理方法
JP2012022916A (ja) 2010-07-15 2012-02-02 Tohoku Univ プラズマ処理装置及びプラズマ処理方法
WO2013121467A1 (ja) 2012-02-17 2013-08-22 国立大学法人東北大学 プラズマ処理装置およびプラズマ処理方法
JP2015032779A (ja) 2013-08-06 2015-02-16 株式会社日立ハイテクノロジーズ プラズマ処理装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263186A (ja) * 1994-03-17 1995-10-13 Hitachi Ltd プラズマ処理装置
JPH07296990A (ja) * 1994-04-28 1995-11-10 Hitachi Ltd プラズマ処理装置
SG50732A1 (en) * 1995-05-19 1998-07-20 Hitachi Ltd Method and apparatus for plasma processing apparatus
JPH10255998A (ja) * 1997-03-06 1998-09-25 Toshiba Corp マイクロ波励起プラズマ処理装置
JP4062928B2 (ja) * 2002-02-06 2008-03-19 東京エレクトロン株式会社 プラズマ処理装置
US20030178143A1 (en) * 2002-03-25 2003-09-25 Applied Materials, Inc. Plasma reactor with plural independently driven concentric coaxial waveguides
JP2004273682A (ja) * 2003-03-07 2004-09-30 Sharp Corp 処理装置
JP5213150B2 (ja) * 2005-08-12 2013-06-19 国立大学法人東北大学 プラズマ処理装置及びプラズマ処理装置を用いた製品の製造方法
JP4852997B2 (ja) * 2005-11-25 2012-01-11 東京エレクトロン株式会社 マイクロ波導入装置及びプラズマ処理装置
JP5082229B2 (ja) * 2005-11-29 2012-11-28 東京エレクトロン株式会社 プラズマ処理装置
JP4677918B2 (ja) * 2006-02-09 2011-04-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5063626B2 (ja) * 2009-02-19 2012-10-31 株式会社日立ハイテクノロジーズ プラズマ処理装置
US20120186747A1 (en) * 2011-01-26 2012-07-26 Obama Shinji Plasma processing apparatus
JP2012190899A (ja) * 2011-03-09 2012-10-04 Hitachi High-Technologies Corp プラズマ処理装置
JP6046985B2 (ja) * 2012-11-09 2016-12-21 株式会社Ihi マイクロ波プラズマ生成装置
JP2016177997A (ja) * 2015-03-20 2016-10-06 東京エレクトロン株式会社 チューナ、マイクロ波プラズマ源、およびインピーダンス整合方法
JP2019109980A (ja) * 2017-12-15 2019-07-04 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP7001456B2 (ja) * 2017-12-19 2022-01-19 株式会社日立ハイテク プラズマ処理装置
JP6991934B2 (ja) * 2018-07-02 2022-01-13 株式会社日立ハイテク プラズマ処理装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005235755A (ja) 2004-02-07 2005-09-02 Samsung Electronics Co Ltd マイクロウェーブ供給装置、それを用いたプラズマ工程装置及びプラズマ工程方法
JP2006324551A (ja) 2005-05-20 2006-11-30 Shibaura Mechatronics Corp プラズマ発生装置及びプラズマ処理装置
JP2012022917A (ja) 2010-07-15 2012-02-02 Tohoku Univ プラズマ処理装置及びプラズマ処理方法
JP2012022916A (ja) 2010-07-15 2012-02-02 Tohoku Univ プラズマ処理装置及びプラズマ処理方法
WO2013121467A1 (ja) 2012-02-17 2013-08-22 国立大学法人東北大学 プラズマ処理装置およびプラズマ処理方法
JP2015032779A (ja) 2013-08-06 2015-02-16 株式会社日立ハイテクノロジーズ プラズマ処理装置

Also Published As

Publication number Publication date
CN113454760A (zh) 2021-09-28
CN113454760B (zh) 2024-03-22
US20220359162A1 (en) 2022-11-10
KR20210098939A (ko) 2021-08-11
JPWO2021152655A1 (https=) 2021-08-05
KR102521817B1 (ko) 2023-04-14
WO2021152655A1 (ja) 2021-08-05
TW202130231A (zh) 2021-08-01
TWI802840B (zh) 2023-05-21

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