CN113454760B - 等离子处理装置 - Google Patents

等离子处理装置 Download PDF

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Publication number
CN113454760B
CN113454760B CN202080004143.3A CN202080004143A CN113454760B CN 113454760 B CN113454760 B CN 113454760B CN 202080004143 A CN202080004143 A CN 202080004143A CN 113454760 B CN113454760 B CN 113454760B
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CN
China
Prior art keywords
waveguide
plasma
processing chamber
plasma processing
circular waveguide
Prior art date
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Active
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CN202080004143.3A
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English (en)
Chinese (zh)
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CN113454760A (zh
Inventor
田村仁
池田纪彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Publication of CN113454760A publication Critical patent/CN113454760A/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32311—Circuits specially adapted for controlling the microwave discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/16—Dielectric waveguides, i.e. without a longitudinal conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
CN202080004143.3A 2020-01-27 2020-01-27 等离子处理装置 Active CN113454760B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/002737 WO2021152655A1 (ja) 2020-01-27 2020-01-27 プラズマ処理装置

Publications (2)

Publication Number Publication Date
CN113454760A CN113454760A (zh) 2021-09-28
CN113454760B true CN113454760B (zh) 2024-03-22

Family

ID=77078043

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080004143.3A Active CN113454760B (zh) 2020-01-27 2020-01-27 等离子处理装置

Country Status (6)

Country Link
US (1) US20220359162A1 (https=)
JP (1) JP7035277B2 (https=)
KR (1) KR102521817B1 (https=)
CN (1) CN113454760B (https=)
TW (1) TWI802840B (https=)
WO (1) WO2021152655A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022157883A1 (ja) * 2021-01-21 2022-07-28 株式会社日立ハイテク プラズマ処理装置
JP7516674B2 (ja) * 2022-06-21 2024-07-16 株式会社日立ハイテク プラズマ処理装置および加熱装置
TWI899592B (zh) * 2022-10-19 2025-10-01 日商日立全球先端科技股份有限公司 電漿處理裝置
TW202514705A (zh) 2023-05-30 2025-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於將能量提供至具有多個功率信號輸入之電漿腔室的系統以及半導體處理系統
US20260011900A1 (en) * 2024-07-06 2026-01-08 Applied Materials, Inc. Wideband tem to tm01 mode converter for microwave plasma systems

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263186A (ja) * 1994-03-17 1995-10-13 Hitachi Ltd プラズマ処理装置
JPH07296990A (ja) * 1994-04-28 1995-11-10 Hitachi Ltd プラズマ処理装置
JPH10255998A (ja) * 1997-03-06 1998-09-25 Toshiba Corp マイクロ波励起プラズマ処理装置
JP2004273682A (ja) * 2003-03-07 2004-09-30 Sharp Corp 処理装置
CN1628495A (zh) * 2002-02-06 2005-06-15 东京毅力科创株式会社 等离子体处理装置
CN101316946A (zh) * 2005-11-29 2008-12-03 东京毅力科创株式会社 等离子处理装置
JP2010192750A (ja) * 2009-02-19 2010-09-02 Hitachi High-Technologies Corp プラズマ処理装置
WO2012008525A1 (ja) * 2010-07-15 2012-01-19 国立大学法人東北大学 プラズマ処理装置及びプラズマ処理方法
JP2012190899A (ja) * 2011-03-09 2012-10-04 Hitachi High-Technologies Corp プラズマ処理装置
JP2014096270A (ja) * 2012-11-09 2014-05-22 Ihi Corp マイクロ波プラズマ生成装置
CN109935511A (zh) * 2017-12-15 2019-06-25 株式会社日立高新技术 等离子体处理装置
JP2019110047A (ja) * 2017-12-19 2019-07-04 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2020004672A (ja) * 2018-07-02 2020-01-09 株式会社日立ハイテクノロジーズ プラズマ処理装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG50732A1 (en) * 1995-05-19 1998-07-20 Hitachi Ltd Method and apparatus for plasma processing apparatus
US20030178143A1 (en) * 2002-03-25 2003-09-25 Applied Materials, Inc. Plasma reactor with plural independently driven concentric coaxial waveguides
KR20050079860A (ko) * 2004-02-07 2005-08-11 삼성전자주식회사 마이크로 웨이브 공급장치, 이를 이용한 플라즈마공정장치 및 플라즈마 공정방법
JP2006324551A (ja) * 2005-05-20 2006-11-30 Shibaura Mechatronics Corp プラズマ発生装置及びプラズマ処理装置
JP5213150B2 (ja) * 2005-08-12 2013-06-19 国立大学法人東北大学 プラズマ処理装置及びプラズマ処理装置を用いた製品の製造方法
JP4852997B2 (ja) * 2005-11-25 2012-01-11 東京エレクトロン株式会社 マイクロ波導入装置及びプラズマ処理装置
JP4677918B2 (ja) * 2006-02-09 2011-04-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5631088B2 (ja) * 2010-07-15 2014-11-26 国立大学法人東北大学 プラズマ処理装置及びプラズマ処理方法
US20120186747A1 (en) * 2011-01-26 2012-07-26 Obama Shinji Plasma processing apparatus
US20140368110A1 (en) * 2012-02-17 2014-12-18 Tohoku University Plasma processing apparatus and plasma processing method
JP2015032779A (ja) * 2013-08-06 2015-02-16 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2016177997A (ja) * 2015-03-20 2016-10-06 東京エレクトロン株式会社 チューナ、マイクロ波プラズマ源、およびインピーダンス整合方法

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263186A (ja) * 1994-03-17 1995-10-13 Hitachi Ltd プラズマ処理装置
JPH07296990A (ja) * 1994-04-28 1995-11-10 Hitachi Ltd プラズマ処理装置
JPH10255998A (ja) * 1997-03-06 1998-09-25 Toshiba Corp マイクロ波励起プラズマ処理装置
CN1628495A (zh) * 2002-02-06 2005-06-15 东京毅力科创株式会社 等离子体处理装置
JP2004273682A (ja) * 2003-03-07 2004-09-30 Sharp Corp 処理装置
CN101316946A (zh) * 2005-11-29 2008-12-03 东京毅力科创株式会社 等离子处理装置
JP2010192750A (ja) * 2009-02-19 2010-09-02 Hitachi High-Technologies Corp プラズマ処理装置
WO2012008525A1 (ja) * 2010-07-15 2012-01-19 国立大学法人東北大学 プラズマ処理装置及びプラズマ処理方法
JP2012190899A (ja) * 2011-03-09 2012-10-04 Hitachi High-Technologies Corp プラズマ処理装置
JP2014096270A (ja) * 2012-11-09 2014-05-22 Ihi Corp マイクロ波プラズマ生成装置
CN109935511A (zh) * 2017-12-15 2019-06-25 株式会社日立高新技术 等离子体处理装置
JP2019110047A (ja) * 2017-12-19 2019-07-04 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2020004672A (ja) * 2018-07-02 2020-01-09 株式会社日立ハイテクノロジーズ プラズマ処理装置

Also Published As

Publication number Publication date
CN113454760A (zh) 2021-09-28
US20220359162A1 (en) 2022-11-10
KR20210098939A (ko) 2021-08-11
JP7035277B2 (ja) 2022-03-14
JPWO2021152655A1 (https=) 2021-08-05
KR102521817B1 (ko) 2023-04-14
WO2021152655A1 (ja) 2021-08-05
TW202130231A (zh) 2021-08-01
TWI802840B (zh) 2023-05-21

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