TWI802840B - 電漿處理裝置 - Google Patents

電漿處理裝置 Download PDF

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Publication number
TWI802840B
TWI802840B TW110102809A TW110102809A TWI802840B TW I802840 B TWI802840 B TW I802840B TW 110102809 A TW110102809 A TW 110102809A TW 110102809 A TW110102809 A TW 110102809A TW I802840 B TWI802840 B TW I802840B
Authority
TW
Taiwan
Prior art keywords
waveguide
plasma
aforementioned
processing chamber
circular waveguide
Prior art date
Application number
TW110102809A
Other languages
English (en)
Chinese (zh)
Other versions
TW202130231A (zh
Inventor
田村仁
池田紀彦
Original Assignee
日商日立全球先端科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 日商日立全球先端科技股份有限公司 filed Critical 日商日立全球先端科技股份有限公司
Publication of TW202130231A publication Critical patent/TW202130231A/zh
Application granted granted Critical
Publication of TWI802840B publication Critical patent/TWI802840B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32311—Circuits specially adapted for controlling the microwave discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/16—Dielectric waveguides, i.e. without a longitudinal conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
TW110102809A 2020-01-27 2021-01-26 電漿處理裝置 TWI802840B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2020/002737 2020-01-27
PCT/JP2020/002737 WO2021152655A1 (ja) 2020-01-27 2020-01-27 プラズマ処理装置

Publications (2)

Publication Number Publication Date
TW202130231A TW202130231A (zh) 2021-08-01
TWI802840B true TWI802840B (zh) 2023-05-21

Family

ID=77078043

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110102809A TWI802840B (zh) 2020-01-27 2021-01-26 電漿處理裝置

Country Status (6)

Country Link
US (1) US20220359162A1 (https=)
JP (1) JP7035277B2 (https=)
KR (1) KR102521817B1 (https=)
CN (1) CN113454760B (https=)
TW (1) TWI802840B (https=)
WO (1) WO2021152655A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022157883A1 (ja) * 2021-01-21 2022-07-28 株式会社日立ハイテク プラズマ処理装置
JP7516674B2 (ja) * 2022-06-21 2024-07-16 株式会社日立ハイテク プラズマ処理装置および加熱装置
TWI899592B (zh) * 2022-10-19 2025-10-01 日商日立全球先端科技股份有限公司 電漿處理裝置
TW202514705A (zh) 2023-05-30 2025-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於將能量提供至具有多個功率信號輸入之電漿腔室的系統以及半導體處理系統
US20260011900A1 (en) * 2024-07-06 2026-01-08 Applied Materials, Inc. Wideband tem to tm01 mode converter for microwave plasma systems

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW339497B (en) * 1995-05-19 1998-09-01 Hitachi Ltd Method of processing plasma and processor of plasma
CN1652661A (zh) * 2004-02-07 2005-08-10 三星电子株式会社 等离子体产生设备及等离子体处理设备
TW200737342A (en) * 2005-11-25 2007-10-01 Tokyo Electron Ltd Microwave introduction device, and plasma treatment device
TW200810613A (en) * 2006-02-09 2008-02-16 Tokyo Electron Ltd Plasma treatment device, and plasma treatment method
TWI407843B (zh) * 2005-11-29 2013-09-01 東京威力科創股份有限公司 Plasma processing device

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263186A (ja) * 1994-03-17 1995-10-13 Hitachi Ltd プラズマ処理装置
JPH07296990A (ja) * 1994-04-28 1995-11-10 Hitachi Ltd プラズマ処理装置
JPH10255998A (ja) * 1997-03-06 1998-09-25 Toshiba Corp マイクロ波励起プラズマ処理装置
JP4062928B2 (ja) * 2002-02-06 2008-03-19 東京エレクトロン株式会社 プラズマ処理装置
US20030178143A1 (en) * 2002-03-25 2003-09-25 Applied Materials, Inc. Plasma reactor with plural independently driven concentric coaxial waveguides
JP2004273682A (ja) * 2003-03-07 2004-09-30 Sharp Corp 処理装置
JP2006324551A (ja) * 2005-05-20 2006-11-30 Shibaura Mechatronics Corp プラズマ発生装置及びプラズマ処理装置
JP5213150B2 (ja) * 2005-08-12 2013-06-19 国立大学法人東北大学 プラズマ処理装置及びプラズマ処理装置を用いた製品の製造方法
JP5063626B2 (ja) * 2009-02-19 2012-10-31 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5631088B2 (ja) * 2010-07-15 2014-11-26 国立大学法人東北大学 プラズマ処理装置及びプラズマ処理方法
JP5572019B2 (ja) * 2010-07-15 2014-08-13 国立大学法人東北大学 プラズマ処理装置及びプラズマ処理方法
US20120186747A1 (en) * 2011-01-26 2012-07-26 Obama Shinji Plasma processing apparatus
JP2012190899A (ja) * 2011-03-09 2012-10-04 Hitachi High-Technologies Corp プラズマ処理装置
US20140368110A1 (en) * 2012-02-17 2014-12-18 Tohoku University Plasma processing apparatus and plasma processing method
JP6046985B2 (ja) * 2012-11-09 2016-12-21 株式会社Ihi マイクロ波プラズマ生成装置
JP2015032779A (ja) * 2013-08-06 2015-02-16 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2016177997A (ja) * 2015-03-20 2016-10-06 東京エレクトロン株式会社 チューナ、マイクロ波プラズマ源、およびインピーダンス整合方法
JP2019109980A (ja) * 2017-12-15 2019-07-04 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP7001456B2 (ja) * 2017-12-19 2022-01-19 株式会社日立ハイテク プラズマ処理装置
JP6991934B2 (ja) * 2018-07-02 2022-01-13 株式会社日立ハイテク プラズマ処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW339497B (en) * 1995-05-19 1998-09-01 Hitachi Ltd Method of processing plasma and processor of plasma
CN1652661A (zh) * 2004-02-07 2005-08-10 三星电子株式会社 等离子体产生设备及等离子体处理设备
TW200737342A (en) * 2005-11-25 2007-10-01 Tokyo Electron Ltd Microwave introduction device, and plasma treatment device
TWI407843B (zh) * 2005-11-29 2013-09-01 東京威力科創股份有限公司 Plasma processing device
TW200810613A (en) * 2006-02-09 2008-02-16 Tokyo Electron Ltd Plasma treatment device, and plasma treatment method

Also Published As

Publication number Publication date
CN113454760A (zh) 2021-09-28
CN113454760B (zh) 2024-03-22
US20220359162A1 (en) 2022-11-10
KR20210098939A (ko) 2021-08-11
JP7035277B2 (ja) 2022-03-14
JPWO2021152655A1 (https=) 2021-08-05
KR102521817B1 (ko) 2023-04-14
WO2021152655A1 (ja) 2021-08-05
TW202130231A (zh) 2021-08-01

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