KR102521817B1 - 플라스마 처리 장치 - Google Patents

플라스마 처리 장치 Download PDF

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Publication number
KR102521817B1
KR102521817B1 KR1020217002237A KR20217002237A KR102521817B1 KR 102521817 B1 KR102521817 B1 KR 102521817B1 KR 1020217002237 A KR1020217002237 A KR 1020217002237A KR 20217002237 A KR20217002237 A KR 20217002237A KR 102521817 B1 KR102521817 B1 KR 102521817B1
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KR
South Korea
Prior art keywords
waveguide
plasma
processing chamber
circular waveguide
dielectric
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KR1020217002237A
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English (en)
Korean (ko)
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KR20210098939A (ko
Inventor
히토시 다무라
노리히코 이케다
Original Assignee
주식회사 히타치하이테크
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Publication of KR20210098939A publication Critical patent/KR20210098939A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32311—Circuits specially adapted for controlling the microwave discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/16—Dielectric waveguides, i.e. without a longitudinal conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
KR1020217002237A 2020-01-27 2020-01-27 플라스마 처리 장치 Active KR102521817B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/002737 WO2021152655A1 (ja) 2020-01-27 2020-01-27 プラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20210098939A KR20210098939A (ko) 2021-08-11
KR102521817B1 true KR102521817B1 (ko) 2023-04-14

Family

ID=77078043

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217002237A Active KR102521817B1 (ko) 2020-01-27 2020-01-27 플라스마 처리 장치

Country Status (6)

Country Link
US (1) US20220359162A1 (https=)
JP (1) JP7035277B2 (https=)
KR (1) KR102521817B1 (https=)
CN (1) CN113454760B (https=)
TW (1) TWI802840B (https=)
WO (1) WO2021152655A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022157883A1 (ja) * 2021-01-21 2022-07-28 株式会社日立ハイテク プラズマ処理装置
JP7516674B2 (ja) * 2022-06-21 2024-07-16 株式会社日立ハイテク プラズマ処理装置および加熱装置
TWI899592B (zh) * 2022-10-19 2025-10-01 日商日立全球先端科技股份有限公司 電漿處理裝置
TW202514705A (zh) 2023-05-30 2025-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於將能量提供至具有多個功率信號輸入之電漿腔室的系統以及半導體處理系統
US20260011900A1 (en) * 2024-07-06 2026-01-08 Applied Materials, Inc. Wideband tem to tm01 mode converter for microwave plasma systems

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006324551A (ja) 2005-05-20 2006-11-30 Shibaura Mechatronics Corp プラズマ発生装置及びプラズマ処理装置
JP2012022917A (ja) 2010-07-15 2012-02-02 Tohoku Univ プラズマ処理装置及びプラズマ処理方法
JP2012022916A (ja) 2010-07-15 2012-02-02 Tohoku Univ プラズマ処理装置及びプラズマ処理方法
JP2015032779A (ja) 2013-08-06 2015-02-16 株式会社日立ハイテクノロジーズ プラズマ処理装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263186A (ja) * 1994-03-17 1995-10-13 Hitachi Ltd プラズマ処理装置
JPH07296990A (ja) * 1994-04-28 1995-11-10 Hitachi Ltd プラズマ処理装置
SG50732A1 (en) * 1995-05-19 1998-07-20 Hitachi Ltd Method and apparatus for plasma processing apparatus
JPH10255998A (ja) * 1997-03-06 1998-09-25 Toshiba Corp マイクロ波励起プラズマ処理装置
JP4062928B2 (ja) * 2002-02-06 2008-03-19 東京エレクトロン株式会社 プラズマ処理装置
US20030178143A1 (en) * 2002-03-25 2003-09-25 Applied Materials, Inc. Plasma reactor with plural independently driven concentric coaxial waveguides
JP2004273682A (ja) * 2003-03-07 2004-09-30 Sharp Corp 処理装置
KR20050079860A (ko) * 2004-02-07 2005-08-11 삼성전자주식회사 마이크로 웨이브 공급장치, 이를 이용한 플라즈마공정장치 및 플라즈마 공정방법
JP5213150B2 (ja) * 2005-08-12 2013-06-19 国立大学法人東北大学 プラズマ処理装置及びプラズマ処理装置を用いた製品の製造方法
JP4852997B2 (ja) * 2005-11-25 2012-01-11 東京エレクトロン株式会社 マイクロ波導入装置及びプラズマ処理装置
JP5082229B2 (ja) * 2005-11-29 2012-11-28 東京エレクトロン株式会社 プラズマ処理装置
JP4677918B2 (ja) * 2006-02-09 2011-04-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5063626B2 (ja) * 2009-02-19 2012-10-31 株式会社日立ハイテクノロジーズ プラズマ処理装置
US20120186747A1 (en) * 2011-01-26 2012-07-26 Obama Shinji Plasma processing apparatus
JP2012190899A (ja) * 2011-03-09 2012-10-04 Hitachi High-Technologies Corp プラズマ処理装置
US20140368110A1 (en) * 2012-02-17 2014-12-18 Tohoku University Plasma processing apparatus and plasma processing method
JP6046985B2 (ja) * 2012-11-09 2016-12-21 株式会社Ihi マイクロ波プラズマ生成装置
JP2016177997A (ja) * 2015-03-20 2016-10-06 東京エレクトロン株式会社 チューナ、マイクロ波プラズマ源、およびインピーダンス整合方法
JP2019109980A (ja) * 2017-12-15 2019-07-04 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP7001456B2 (ja) * 2017-12-19 2022-01-19 株式会社日立ハイテク プラズマ処理装置
JP6991934B2 (ja) * 2018-07-02 2022-01-13 株式会社日立ハイテク プラズマ処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006324551A (ja) 2005-05-20 2006-11-30 Shibaura Mechatronics Corp プラズマ発生装置及びプラズマ処理装置
JP2012022917A (ja) 2010-07-15 2012-02-02 Tohoku Univ プラズマ処理装置及びプラズマ処理方法
JP2012022916A (ja) 2010-07-15 2012-02-02 Tohoku Univ プラズマ処理装置及びプラズマ処理方法
JP2015032779A (ja) 2013-08-06 2015-02-16 株式会社日立ハイテクノロジーズ プラズマ処理装置

Also Published As

Publication number Publication date
CN113454760A (zh) 2021-09-28
CN113454760B (zh) 2024-03-22
US20220359162A1 (en) 2022-11-10
KR20210098939A (ko) 2021-08-11
JP7035277B2 (ja) 2022-03-14
JPWO2021152655A1 (https=) 2021-08-05
WO2021152655A1 (ja) 2021-08-05
TW202130231A (zh) 2021-08-01
TWI802840B (zh) 2023-05-21

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