JP7023832B2 - フレキシブルパネルの製造方法、フレキシブルパネルおよび表示装置 - Google Patents
フレキシブルパネルの製造方法、フレキシブルパネルおよび表示装置 Download PDFInfo
- Publication number
- JP7023832B2 JP7023832B2 JP2018501217A JP2018501217A JP7023832B2 JP 7023832 B2 JP7023832 B2 JP 7023832B2 JP 2018501217 A JP2018501217 A JP 2018501217A JP 2018501217 A JP2018501217 A JP 2018501217A JP 7023832 B2 JP7023832 B2 JP 7023832B2
- Authority
- JP
- Japan
- Prior art keywords
- flexible panel
- material layer
- deformable material
- flexible
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 68
- 239000000463 material Substances 0.000 claims description 120
- 238000000034 method Methods 0.000 claims description 62
- 239000000758 substrate Substances 0.000 claims description 62
- 239000010409 thin film Substances 0.000 claims description 26
- 239000012781 shape memory material Substances 0.000 claims description 20
- 239000010408 film Substances 0.000 claims description 19
- 230000008859 change Effects 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 6
- 229910001285 shape-memory alloy Inorganic materials 0.000 claims description 6
- 230000009920 chelation Effects 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000006479 redox reaction Methods 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 description 19
- 230000004888 barrier function Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 8
- 238000002161 passivation Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 6
- 239000004372 Polyvinyl alcohol Substances 0.000 description 4
- 229920002125 Sokalan® Polymers 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229920002401 polyacrylamide Polymers 0.000 description 4
- 239000004584 polyacrylic acid Substances 0.000 description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011232 storage material Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920000431 shape-memory polymer Polymers 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Description
例えば、本発明の一実施例に係るフレキシブルパネルの製造方法において、前記形状記憶材料は、形状記憶合金、形状記憶セラミックス、または有機形状記憶材料のうちの少なくとも1つを含む。
例えば、図2に示されるように、剛性のベース基板101上に変形材料層110を形成する。ベース基板101は、例えば、ガラス基板、石英基板、プラスチック基板などの硬質基板であってもよい。
例えば、ベース基板101は、平坦な基板であってもよい。
例えば、図2に示すように、ベース基板101上にフレキシブルパネル本体120を形成する。フレキシブルパネル本体120は、フレキシブルディスプレイパネルおよび/またはフレキシブルタッチパネルであってもよい。
例えば、図3に示すように、変形材料層110を駆動してその形状を変化させることで、ベース基板101と少なくとも部分的に分離し、それによってフレキシブルパネル本体120を少なくとも部分的に剥離できるようにする。
例えば、変形後の変形材料層110は、少なくとも1つの曲げ部115を含む。
例えば、図4に示すように、ベース基板を剥離することで、フレキシブルパネルが得られる。
例えば、図8に示すように、変形材料層110上にフレキシブルフィルム124を形成する。
例えば、図8に示すように、フレキシブルフィルム124上にゲート電極1221を形成し、ゲート電極1221とフレキシブルフィルム124上にゲート電極1221を被覆するゲート絶縁層1222を形成し、ゲート絶縁層1222上にゲート電極1221の位置で活性層1223を形成し、活性層1223上にエッチングバリア層1226を形成し、エッチングバリア層1226上にソース電極1224とドレイン電極1225を形成する。ソース電極1224とドレイン電極1225は、エッチングバリア層1226におけるビアホールを介して活性層1223にそれぞれ接続される。図8に示されるゲート電極1221、ゲート絶縁層1222、活性層1223、エッチングバリア層1226、ソース電極1224およびドレイン電極1225は、ESL(Etching Stop Layer)型の薄膜トランジスタ122を構成可能であるが、本発明の実施例はこれに限定されず、薄膜トランジスタ122はトップゲート型またはバックチャネルエッチ型の薄膜トランジスタであってもよい。
例えば、図8に示すように、ソース電極1224とドレイン電極1225上にパッシベーション層1227を形成し、薄膜トランジスタ122とパッシベーション層1227上に第1電極123を形成する。第1電極123は、パッシベーション層1227におけるビアホールを介してドレイン電極1225に電気的に接続される。なお、第1電極123が画素電極である場合、該フレキシブルパネル本体はフレキシブル液晶ディスプレイパネルである。
(1)本発明の実施例の図面は、本発明の実施例に係る構造のみに関し、他の構造は通常の設計を参照すればよい。
(2)明確にするために、本開示の実施例を説明するための図面において、層またはマイクロ構造の厚さや寸法は拡大または縮小される。層、膜、領域や基板のような素子が他の素子の「上」または「下」に位置すると説明される場合、該素子が他の素子の「上」または「下」に「直接」に位置してもよく、または中間素子が介在してもよいと理解すべきである。
(3)矛盾がない限り、本発明の実施例または実施例における特徴を互いに組み合わせて新しい実施例を得ることができる。
110 変形材料層
115 曲げ部
120 フレキシブルパネル本体
122 薄膜トランジスタ
123 第1電極
124 フレキシブルフィルム
125 有機発光層
1221 ゲート電極
1222 ゲート絶縁層
1223 活性層
1224 ソース電極
1225 ドレイン電極
1226 エッチングバリア層
1227 パッシベーション層
Claims (13)
- フレキシブルパネルの製造方法であって、
ベース基板上に、形状記憶材料が含まれている変形材料層を形成するステップと、
前記変形材料層の前記ベース基板から離れた側に、フレキシブルパネル本体を形成するステップと、
前記フレキシブルパネル本体を前記ベース基板から少なくとも部分的に剥離できるように、前記変形材料層を駆動するステップと、
前記ベース基板を剥離するステップと、を含む、フレキシブルパネルの製造方法。 - 前記変形材料層を形状変化させるとともに前記ベース基板と少なくとも部分的に分離するように、前記変形材料層を駆動する、請求項1に記載のフレキシブルパネルの製造方法。
- 前記変形材料層の変形後の形状は、少なくとも1つの曲げ部を含む、請求項1に記載のフレキシブルパネルの製造方法。
- 前記変形材料層を形状変化させるとともに前記ベース基板と少なくとも部分的に分離するように、前記変形材料層を駆動するステップは、
化学的駆動手段または物理的駆動手段により前記変形材料層を駆動することで、前記変形材料層を形状変化させるとともに前記ベース基板と少なくとも部分的に分離するステップを含む、請求項2に記載のフレキシブルパネルの製造方法。 - 前記化学的駆動手段は、pH値調整、対イオン交換、キレート化反応、または酸化還元反応を含む、請求項4に記載のフレキシブルパネルの製造方法。
- 前記フレキシブルパネル本体を形成する前に、前記変形材料層の初期形状を固定するステップと、
前記ベース基板を剥離した後に、前記変形材料層を駆動して前記初期形状に復帰させるステップと、をさらに含む、請求項1~5のいずれか一項に記載のフレキシブルパネルの製造方法。 - 前記形状記憶材料は、形状記憶合金、形状記憶セラミックス、および有機形状記憶材料のうちの少なくとも1つを含む、請求項1~4のいずれか一項に記載のフレキシブルパネルの製造方法。
- 前記変形材料層を形状変化させるように前記変形材料層を駆動する前に、前記フレキシブルパネル本体を封止するステップをさらに含む、請求項1~5のいずれか一項に記載のフレキシブルパネルの製造方法。
- 前記曲げ部の曲率半径は、1メートルより大きい、請求項3に記載のフレキシブルパネルの製造方法。
- 前記フレキシブルパネル本体は、フレキシブルディスプレイパネル、またはフレキシブルタッチパネルの少なくとも1つを含む、請求項1~5のいずれか一項に記載のフレキシブルパネルの製造方法。
- 前記フレキシブルパネル本体を形成するステップは、
前記変形材料層上にフレキシブルフィルムを形成するステップと、
前記フレキシブルフィルム上に薄膜トランジスタを形成するステップと、
前記薄膜トランジスタ上に第1電極を形成するステップと、を含む、請求項1~5のいずれか一項に記載のフレキシブルパネルの製造方法。 - 前記フレキシブルパネル本体を形成するステップは、
前記変形材料層上に薄膜トランジスタを直接に形成するステップと、
前記薄膜トランジスタアレイ上に第1電極を形成するステップと、を含む、請求項1~5のいずれか一項に記載のフレキシブルパネルの製造方法。 - 前記フレキシブルパネル本体を形成するステップは、
前記第1電極上に有機発光層を形成するステップをさらに含む、請求項11または12に記載のフレキシブルパネルの製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611219101.3A CN108242424B (zh) | 2016-12-26 | 2016-12-26 | 柔性面板的制作方法、柔性面板及显示装置 |
CN201611219101.3 | 2016-12-26 | ||
PCT/CN2017/092965 WO2018120765A1 (zh) | 2016-12-26 | 2017-07-14 | 柔性面板的制作方法、柔性面板及显示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020514778A JP2020514778A (ja) | 2020-05-21 |
JP7023832B2 true JP7023832B2 (ja) | 2022-02-22 |
Family
ID=62701477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018501217A Active JP7023832B2 (ja) | 2016-12-26 | 2017-07-14 | フレキシブルパネルの製造方法、フレキシブルパネルおよび表示装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10818878B2 (ja) |
EP (1) | EP3561863A4 (ja) |
JP (1) | JP7023832B2 (ja) |
CN (1) | CN108242424B (ja) |
WO (1) | WO2018120765A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106910431A (zh) * | 2017-05-04 | 2017-06-30 | 京东方科技集团股份有限公司 | 柔性显示屏及改变柔性显示屏的形状的方法 |
CN108389888B (zh) * | 2018-04-28 | 2020-11-17 | 京东方科技集团股份有限公司 | 柔性显示面板及其制造方法、显示装置 |
WO2020132802A1 (zh) * | 2018-12-24 | 2020-07-02 | 深圳市柔宇科技有限公司 | 电子器件及其制作方法 |
CN111725435A (zh) * | 2020-06-08 | 2020-09-29 | 武汉华星光电半导体显示技术有限公司 | 曲面显示器及其制备方法 |
CN114188498A (zh) * | 2021-12-03 | 2022-03-15 | 武汉华星光电半导体显示技术有限公司 | 柔性显示面板及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003280546A (ja) | 2002-03-27 | 2003-10-02 | Matsushita Electric Ind Co Ltd | 自己変形型フレキシブルディスプレイ及びそれを用いた情報処理端末 |
JP2011062978A (ja) | 2009-09-18 | 2011-03-31 | Fujifilm Corp | インプリント方法に用いる剥離板、モールド構造体及びインプリント方法 |
US20150171354A1 (en) | 2013-12-12 | 2015-06-18 | Electronics And Telecommunications Research Institute | Method for fabricating flexible display |
US20160004032A1 (en) | 2013-02-21 | 2016-01-07 | Empire Technology Development Llc | Shape memory alloy apparatus and methods of formation and operation thereof |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1194452A (zh) * | 1997-03-26 | 1998-09-30 | 佳能株式会社 | 薄膜形成工艺 |
CA2232796C (en) | 1997-03-26 | 2002-01-22 | Canon Kabushiki Kaisha | Thin film forming process |
JPH11109880A (ja) * | 1997-10-02 | 1999-04-23 | Japan Aviation Electron Ind Ltd | 表示装置 |
KR101037794B1 (ko) * | 2004-12-30 | 2011-05-27 | 삼성전자주식회사 | 플렉서블 디스플레이 장치 및 그 제조 방법 |
US8137417B2 (en) * | 2006-09-29 | 2012-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Peeling apparatus and manufacturing apparatus of semiconductor device |
US7968382B2 (en) | 2007-02-02 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
KR101084230B1 (ko) * | 2009-11-16 | 2011-11-16 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
DE102013209913B4 (de) * | 2012-06-08 | 2018-07-12 | GM Global Technology Operations, LLC (n.d. Ges. d. Staates Delaware) | Oberflächentexturierung mithilfe technischer Strukturen |
KR102066075B1 (ko) | 2012-12-12 | 2020-01-14 | 엘지디스플레이 주식회사 | 플렉서블 디스플레이용 기판 및 그 제조방법 |
KR101950847B1 (ko) | 2012-12-20 | 2019-02-21 | 엘지디스플레이 주식회사 | 플렉서블 디스플레이 모듈, 그 제조방법 및 이를 구동 제어하는 방법 |
KR102338062B1 (ko) | 2014-06-30 | 2021-12-13 | 엘지디스플레이 주식회사 | 형상 기억 복합체 및 이를 포함하는 가변형 표시장치 |
KR102343892B1 (ko) | 2015-01-15 | 2021-12-27 | 삼성디스플레이 주식회사 | 가요성 표시 장치 |
US10345905B2 (en) * | 2015-09-08 | 2019-07-09 | Apple Inc. | Electronic devices with deformable displays |
CN105355645B (zh) | 2015-11-06 | 2019-07-26 | 上海天马微电子有限公司 | 一种柔性显示面板及其制造方法、显示装置 |
CN105428312B (zh) * | 2015-11-18 | 2018-05-01 | 上海大学 | 柔性衬底的制备和分离方法 |
CN105449124B (zh) * | 2015-12-01 | 2018-01-23 | 昆山工研院新型平板显示技术中心有限公司 | 柔性显示装置及其制备方法 |
-
2016
- 2016-12-26 CN CN201611219101.3A patent/CN108242424B/zh active Active
-
2017
- 2017-07-14 JP JP2018501217A patent/JP7023832B2/ja active Active
- 2017-07-14 WO PCT/CN2017/092965 patent/WO2018120765A1/zh unknown
- 2017-07-14 EP EP17825093.2A patent/EP3561863A4/en not_active Withdrawn
- 2017-07-14 US US15/743,849 patent/US10818878B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003280546A (ja) | 2002-03-27 | 2003-10-02 | Matsushita Electric Ind Co Ltd | 自己変形型フレキシブルディスプレイ及びそれを用いた情報処理端末 |
JP2011062978A (ja) | 2009-09-18 | 2011-03-31 | Fujifilm Corp | インプリント方法に用いる剥離板、モールド構造体及びインプリント方法 |
US20160004032A1 (en) | 2013-02-21 | 2016-01-07 | Empire Technology Development Llc | Shape memory alloy apparatus and methods of formation and operation thereof |
US20150171354A1 (en) | 2013-12-12 | 2015-06-18 | Electronics And Telecommunications Research Institute | Method for fabricating flexible display |
Also Published As
Publication number | Publication date |
---|---|
CN108242424B (zh) | 2019-09-03 |
EP3561863A4 (en) | 2020-07-29 |
US20190006633A1 (en) | 2019-01-03 |
US10818878B2 (en) | 2020-10-27 |
JP2020514778A (ja) | 2020-05-21 |
EP3561863A1 (en) | 2019-10-30 |
CN108242424A (zh) | 2018-07-03 |
WO2018120765A1 (zh) | 2018-07-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7023832B2 (ja) | フレキシブルパネルの製造方法、フレキシブルパネルおよび表示装置 | |
CN105280673B (zh) | 显示装置以及显示装置的制造方法 | |
TWI457886B (zh) | 可撓性顯示裝置之製造方法 | |
CN101976671B (zh) | 防止基板变形 | |
CN106816443A (zh) | 显示基底、制造显示基底的方法及显示器件 | |
TWI734074B (zh) | 顯示面板及其製作方法 | |
CN109360901B (zh) | 一种显示装置、柔性oled显示面板及其制作方法 | |
US20190157355A1 (en) | Touch screen panel and manufacturing method thereof | |
CN104392991B (zh) | 一种阵列基板及其制备方法、显示装置 | |
CN104037127A (zh) | 一种多晶硅层及显示基板的制备方法、显示基板 | |
CN1893142A (zh) | 微细结构、微机械、有机晶体管、电器及其制造方法 | |
CN105702686A (zh) | 导电元件基板、导电元件基板的制造方法以及显示面板 | |
CN104766802B (zh) | 液晶显示面板、阵列基板及其薄膜晶体管的制造方法 | |
TWI313062B (en) | Method for producing active plastic panel displayers | |
JP2008085313A5 (ja) | ||
CN105097673B (zh) | Tft基板结构的制作方法 | |
JP2007283480A5 (ja) | ||
CN109560085A (zh) | 显示面板及显示模组 | |
CN108333845A (zh) | 阵列基板、显示面板以及阵列基板的制作方法 | |
US11342358B2 (en) | Display panel and method for manufacturing same | |
CN111312728A (zh) | 阵列基板及其制作方法 | |
TW462135B (en) | Method for manufacturing the electronic device of thin film transistor display | |
CN108831892B (zh) | 显示背板及其制造方法、显示面板和显示装置 | |
US10490756B2 (en) | Method for fabricating flexible OLED panel and flexible OLED panel | |
EP3528286B1 (en) | Display device and manufacturing method therefor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200625 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210426 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210510 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210810 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20211004 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220104 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220117 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220209 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7023832 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |