JP7002731B2 - 気相成長装置 - Google Patents
気相成長装置 Download PDFInfo
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- JP7002731B2 JP7002731B2 JP2018092438A JP2018092438A JP7002731B2 JP 7002731 B2 JP7002731 B2 JP 7002731B2 JP 2018092438 A JP2018092438 A JP 2018092438A JP 2018092438 A JP2018092438 A JP 2018092438A JP 7002731 B2 JP7002731 B2 JP 7002731B2
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- phase growth
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- 238000007740 vapor deposition Methods 0.000 title description 5
- 239000007789 gas Substances 0.000 claims description 346
- 239000002994 raw material Substances 0.000 claims description 217
- 229910052751 metal Inorganic materials 0.000 claims description 77
- 239000002184 metal Substances 0.000 claims description 77
- 238000001947 vapour-phase growth Methods 0.000 claims description 41
- 238000006243 chemical reaction Methods 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 19
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 claims description 11
- 230000003197 catalytic effect Effects 0.000 claims description 10
- 239000012071 phase Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 38
- 239000013078 crystal Substances 0.000 description 19
- 229910052721 tungsten Inorganic materials 0.000 description 14
- 239000010937 tungsten Substances 0.000 description 14
- 238000001556 precipitation Methods 0.000 description 13
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 13
- 230000000694 effects Effects 0.000 description 5
- 238000005192 partition Methods 0.000 description 5
- 238000007599 discharging Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
Images
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- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018092438A JP7002731B2 (ja) | 2018-05-11 | 2018-05-11 | 気相成長装置 |
| CN201880061909.4A CN111133133B (zh) | 2017-09-25 | 2018-09-07 | 气相生长装置及其控制方法 |
| US16/649,371 US11591717B2 (en) | 2017-09-25 | 2018-09-07 | Vapor phase epitaxial growth device |
| PCT/JP2018/033324 WO2019059009A1 (ja) | 2017-09-25 | 2018-09-07 | 気相成長装置 |
| US18/112,750 US12009206B2 (en) | 2017-09-25 | 2023-02-22 | Vapor phase epitaxial growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018092438A JP7002731B2 (ja) | 2018-05-11 | 2018-05-11 | 気相成長装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019196293A JP2019196293A (ja) | 2019-11-14 |
| JP2019196293A5 JP2019196293A5 (enExample) | 2020-10-08 |
| JP7002731B2 true JP7002731B2 (ja) | 2022-01-20 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018092438A Active JP7002731B2 (ja) | 2017-09-25 | 2018-05-11 | 気相成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP7002731B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7653162B2 (ja) | 2020-02-14 | 2025-03-28 | 国立大学法人東海国立大学機構 | 窒化ガリウムの気相成長装置および製造方法 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002316892A (ja) | 2001-04-12 | 2002-10-31 | Matsushita Electric Ind Co Ltd | 気相成長装置 |
| JP2003306398A (ja) | 2002-04-09 | 2003-10-28 | Denso Corp | 炭化珪素単結晶の製造方法および製造装置 |
| JP2008504443A (ja) | 2004-06-30 | 2008-02-14 | ワン ナン ワン | 高品質化合物半導体材料を製造するための成膜方法 |
| JP2010222232A (ja) | 2009-02-26 | 2010-10-07 | Kyocera Corp | 単結晶体、単結晶基板、ならびに単結晶体の製造方法および製造装置 |
| CN102108547A (zh) | 2010-12-31 | 2011-06-29 | 东莞市中镓半导体科技有限公司 | 一种多片大尺寸氢化物气相外延方法和装置 |
| JP2011256082A (ja) | 2010-06-10 | 2011-12-22 | Sumitomo Electric Ind Ltd | ＧａＮ結晶自立基板およびその製造方法 |
| JP2014201496A (ja) | 2013-04-05 | 2014-10-27 | 古河機械金属株式会社 | 半導体装置の製造方法及びハイドライド気相成長装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006013326A (ja) * | 2004-06-29 | 2006-01-12 | Nippon Spindle Mfg Co Ltd | 半導体製造装置の温度制御方法 |
| JP2013058741A (ja) * | 2011-08-17 | 2013-03-28 | Hitachi Cable Ltd | 金属塩化物ガス発生装置、ハイドライド気相成長装置、及び窒化物半導体テンプレート |
| JP2013070016A (ja) * | 2011-09-06 | 2013-04-18 | Sharp Corp | 窒化物半導体結晶成長装置およびその成長方法 |
| JP6026188B2 (ja) * | 2011-09-12 | 2016-11-16 | 住友化学株式会社 | 窒化物半導体結晶の製造方法 |
-
2018
- 2018-05-11 JP JP2018092438A patent/JP7002731B2/ja active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002316892A (ja) | 2001-04-12 | 2002-10-31 | Matsushita Electric Ind Co Ltd | 気相成長装置 |
| JP2003306398A (ja) | 2002-04-09 | 2003-10-28 | Denso Corp | 炭化珪素単結晶の製造方法および製造装置 |
| JP2008504443A (ja) | 2004-06-30 | 2008-02-14 | ワン ナン ワン | 高品質化合物半導体材料を製造するための成膜方法 |
| JP2010222232A (ja) | 2009-02-26 | 2010-10-07 | Kyocera Corp | 単結晶体、単結晶基板、ならびに単結晶体の製造方法および製造装置 |
| JP2011256082A (ja) | 2010-06-10 | 2011-12-22 | Sumitomo Electric Ind Ltd | ＧａＮ結晶自立基板およびその製造方法 |
| CN102108547A (zh) | 2010-12-31 | 2011-06-29 | 东莞市中镓半导体科技有限公司 | 一种多片大尺寸氢化物气相外延方法和装置 |
| JP2014201496A (ja) | 2013-04-05 | 2014-10-27 | 古河機械金属株式会社 | 半導体装置の製造方法及びハイドライド気相成長装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019196293A (ja) | 2019-11-14 |
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