JP6998690B2 - 情報端末 - Google Patents
情報端末 Download PDFInfo
- Publication number
- JP6998690B2 JP6998690B2 JP2017139602A JP2017139602A JP6998690B2 JP 6998690 B2 JP6998690 B2 JP 6998690B2 JP 2017139602 A JP2017139602 A JP 2017139602A JP 2017139602 A JP2017139602 A JP 2017139602A JP 6998690 B2 JP6998690 B2 JP 6998690B2
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- JP
- Japan
- Prior art keywords
- transistor
- bending
- liquid crystal
- light emitting
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Images
Classifications
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- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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- H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
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- H—ELECTRICITY
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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Description
本実施の形態は、本発明の一態様である情報端末について説明する。
本実施の形態では、表示パネル30の構成例について、図10を用いて説明を行う。
図10では、表示領域が凹方向に曲がる場合に、複数のクラック194が開いて曲げセンサ素子190の抵抗値が大きくなる。つまり、図10に示す曲げセンサ素子190は曲げセンサDRgに相当する。一方で、曲げセンサ素子190を図10と反対向きに配置した場合、表示領域が凸方向に曲がるときに、複数のクラック194が開いて曲げセンサ素子190の抵抗値が大きくなる。つまり、この場合の曲げセンサ素子190は曲げセンサCRgに相当する。このように、曲げセンサCRgと曲げセンサDRgとは反対向きに配置されている(図11(A)及び図11(B)参照)。
<CAC-OSの構成>
以下では、本発明の一態様で開示されるトランジスタに用いることができるCAC(Cloud-Aligned Composite)-OSの構成について説明する。
C2 容量素子
C3 容量素子
CND ノード
DND ノード
FD1 ノード
FD2 ノード
M1 トランジスタ
M2 トランジスタ
M3 トランジスタ
M3a トランジスタ
M4 トランジスタ
MC1 トランジスタ
MC2 トランジスタ
MC3 トランジスタ
MD1 トランジスタ
MD2 トランジスタ
MD3 トランジスタ
SIN ノード
T1 時刻
T2 時刻
T3 時刻
T4 時刻
T5 時刻
10 情報端末
11 表示画素
11a 表示画素
14 ゲートドライバ
15 ソースドライバ
16 表示領域
30 表示パネル
31 上部カバー
32 タッチパネル
33 フレーム
34 プリント基板
35 バッテリー
36 下部カバー
50 画素ブロック
60C マルチプレクサ
60D マルチプレクサ
70 ADコンバータ
80 判定回路
110 画素
120 画素
130 センサ素子
170 発光素子
171 導電層
172 導電層
173 EL層
180 液晶素子
181 配向膜
182 配向膜
183 液晶
190 曲げセンサ素子
191 導電層
192a 導電層
192b 導電層
193 導電層
194 クラック
200 フィルム
201 接着層
202 電極
211 絶縁層
212 絶縁層
213 絶縁層
214 絶縁層
215 絶縁層
216 絶縁層
220 絶縁層
221 導電層
222 導電層
223 導電層
224 導電層
225 導電層
231 半導体層
241 着色層
251 接続部
252 接続部
260 接続層
271 トランジスタ
272 トランジスタ
273 トランジスタ
300 フィルム
301 偏光板
302 接着層
303 接続体
311 着色層
312 遮光層
313 絶縁層
314 絶縁層
321 導電層
322 導電層
323 導電層
330 開口
350 FPC
Claims (7)
- 液晶素子を有する第1の画素と、発光素子を有する第2の画素と、センサ素子と、を表示部に有し、前記液晶素子と前記発光素子とを独立して制御して表示を行う情報端末であって、
前記液晶素子は、前記発光素子の上方に設けられ、
前記センサ素子は、前記表示部の凸方向の曲げに応じて抵抗値が変化する第1の曲げセンサと、前記表示部の凹方向の曲げに応じて抵抗値が変化する第2の曲げセンサと、を有し、
前記表示部が凸方向に曲がることによって前記液晶素子の反射光量が増加するとき、前記センサ素子の出力に応じて、前記発光素子の輝度が低下し、
前記表示部が凹方向に曲がることによって前記液晶素子の反射光量が減少するとき、前記センサ素子の出力に応じて、前記発光素子の輝度を高くなる、情報端末。 - 液晶素子を有する第1の画素と、発光素子を有する第2の画素と、センサ素子と、を表示部に有し、前記液晶素子と前記発光素子とを独立して制御して表示を行う情報端末であって、
前記第2の画素は、前記発光素子に電流を供給するトランジスタと、容量素子と、を有し、
前記液晶素子は、前記発光素子の上方に設けられ、
前記センサ素子は、前記表示部の凸方向の曲げに応じて抵抗値が変化する第1の曲げセンサと、前記表示部の凹方向の曲げに応じて抵抗値が変化する第2の曲げセンサと、を有し、
前記容量素子は、第1の電極が前記トランジスタのゲートと電気的に接続され、第2の電極が前記センサ素子と電気的に接続され、
前記表示部が凸方向に曲がることによって前記液晶素子の反射光量が増加するとき、前記センサ素子の出力に応じて、前記発光素子の輝度が低下し、
前記表示部が凹方向に曲がることによって前記液晶素子の反射光量が減少するとき、前記センサ素子の出力に応じて、前記発光素子の輝度を高くなる、情報端末。 - 請求項2において、
前記表示部が凸方向に曲がることによって前記液晶素子の反射光量が増加するとき、前記容量素子の第1の電極と前記センサ素子とが電気的に接続する第1のノードの電位を低下させることで、前記容量素子の第2の電極と前記トランジスタのゲートとが電気的に接続する第2のノードの電位が低下し、
前記表示部が凹方向に曲がることによって前記液晶素子の反射光量が減少するとき、前記第1のノードの電位を上昇させることで、前記第2のノードの電位が上昇する、情報端末。 - 液晶素子を有する第1の画素と、発光素子を有する第2の画素と、センサ素子と、を表示部に有し、前記液晶素子と前記発光素子とを独立して制御して表示を行う情報端末であって、
前記第2の画素は、前記発光素子に電流を供給するトランジスタを有し、
前記液晶素子は、前記発光素子の上方に設けられ、
前記センサ素子は、前記表示部の凸方向の曲げに応じて抵抗値が変化する第1の曲げセンサと、前記表示部の凹方向の曲げに応じて抵抗値が変化する第2の曲げセンサと、を有し、
前記センサ素子は、前記トランジスタのバックゲートと電気的に接続され、
前記表示部が凸方向に曲がることによって前記液晶素子の反射光量が増加するとき、前記センサ素子の出力に応じて、前記発光素子の輝度が低下し、
前記表示部が凹方向に曲がることによって前記液晶素子の反射光量が減少するとき、前記センサ素子の出力に応じて、前記発光素子の輝度を高くなる、情報端末。 - 請求項4において、
前記表示部が凸方向に曲がることによって前記液晶素子の反射光量が増加するとき、前記トランジスタのバックゲートと前記センサ素子とが電気的に接続する第1のノードの電位を低下させることで、前記トランジスタのゲートが電気的に接続する第2のノードの電位が低下し、
前記表示部が凹方向に曲がることによって前記液晶素子の反射光量が減少するとき、前記第1のノードの電位を上昇させることで、前記第2のノードの電位が上昇する、情報端末。 - 請求項1乃至5のいずれか一項において、
前記センサ素子は、第1の抵抗素子と、第2の抵抗素子と、を有し、
前記第1の抵抗素子の第1の端子は、前記第1の曲げセンサの第1の端子と電気的に接続され、
前記第2の抵抗素子の第1の端子は、前記第2の曲げセンサの第1の端子と電気的に接続され、
前記第1の抵抗素子の第2の端子は、前記第2の曲げセンサの第2の端子と電気的に接続され、
前記第2の抵抗素子の第2の端子は、前記第1の曲げセンサの第2の端子と電気的に接続され、
前記表示部が凸方向に曲がっている場合、前記センサ素子は前記第1の曲げセンサの第1の端子の電位を出力し、
前記表示部が凹方向に曲がっている場合、前記センサ素子は前記第2の曲げセンサの第1の端子の電位を出力する、情報端末。 - 請求項1乃至6のいずれか一項において、
前記液晶素子は、反射型液晶素子である、情報端末。
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