JP6990240B2 - 金属基板へのスズ層の被覆方法、および、ニッケル／リン合金下層と、前記方法による前記スズ層と、を備えた構造の使用 - Google Patents

金属基板へのスズ層の被覆方法、および、ニッケル／リン合金下層と、前記方法による前記スズ層と、を備えた構造の使用 Download PDF

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JP6990240B2
JP6990240B2 JP2019521768A JP2019521768A JP6990240B2 JP 6990240 B2 JP6990240 B2 JP 6990240B2 JP 2019521768 A JP2019521768 A JP 2019521768A JP 2019521768 A JP2019521768 A JP 2019521768A JP 6990240 B2 JP6990240 B2 JP 6990240B2
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Japan
Prior art keywords
tin
nickel
layer
whiskers
silver
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Expired - Fee Related
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JP2019521768A
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English (en)
Japanese (ja)
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JP2019533088A5 (enExample
JP2019533088A (ja
Inventor
ネオ，ティン－ジー
タン，チー－チョウ
ジョー リン，チェン
ルーター，ローベルト
バルテルメス，ユルゲン
クルツ，オーラフ
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Atotech Deutschland GmbH and Co KG
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Atotech Deutschland GmbH and Co KG
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/03—Alloys based on nickel or cobalt based on nickel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
    • C25D5/14—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34—Pretreatment of metallic surfaces to be electroplated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/615—Microstructure of the layers, e.g. mixed structure
    • C25D5/617—Crystalline layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Rolls And Other Rotary Bodies (AREA)
JP2019521768A 2016-10-24 2017-10-24 金属基板へのスズ層の被覆方法、および、ニッケル／リン合金下層と、前記方法による前記スズ層と、を備えた構造の使用 Expired - Fee Related JP6990240B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP16195351.8 2016-10-24
EP16195351 2016-10-24
PCT/EP2017/077156 WO2018077874A1 (en) 2016-10-24 2017-10-24 A method of depositing a tin layer on a metal substrate and a use of a structure comprising a nickel/phosphorous alloy underlayer and said tin layer with said method

Publications (3)

Publication Number Publication Date
JP2019533088A JP2019533088A (ja) 2019-11-14
JP2019533088A5 JP2019533088A5 (enExample) 2020-11-19
JP6990240B2 true JP6990240B2 (ja) 2022-01-12

Family

ID=57211308

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JP2019521768A Expired - Fee Related JP6990240B2 (ja) 2016-10-24 2017-10-24 金属基板へのスズ層の被覆方法、および、ニッケル／リン合金下層と、前記方法による前記スズ層と、を備えた構造の使用

Country Status (8)

Country Link
US (1) US20190271093A1 (enExample)
EP (1) EP3529398B1 (enExample)
JP (1) JP6990240B2 (enExample)
KR (1) KR102404045B1 (enExample)
CN (1) CN109844182A (enExample)
MY (1) MY192687A (enExample)
SG (1) SG11201902595UA (enExample)
WO (1) WO2018077874A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7121881B2 (ja) * 2017-08-08 2022-08-19 三菱マテリアル株式会社 銀皮膜付端子材及び銀皮膜付端子
MX2021010225A (es) * 2019-02-25 2021-09-21 Tata Steel Ijmuiden Bv Metodo para depositar electroliticamente una capa de oxido de cromo.
US11306409B2 (en) 2019-05-23 2022-04-19 Ag-Nano System Llc Method to enable electroplating of golden silver nanoparticles
CA3202631A1 (en) * 2020-12-17 2022-06-23 George Bokisa Multilayer corrosion system
JP2023075905A (ja) * 2021-11-19 2023-05-31 千住金属工業株式会社 金属体の形成方法および金属体、ならびにその金属体を備える嵌合型接続端子

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003003292A (ja) 2001-05-11 2003-01-08 Lucent Technol Inc 被覆金属製品
JP2006307328A (ja) 2005-03-28 2006-11-09 Sony Corp 無鉛Ｓｎベースめっき膜及びその製造方法、並びに接続部品の接点構造

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58221291A (ja) * 1982-06-16 1983-12-22 Furukawa Electric Co Ltd:The 電気接続用銀被覆銅材料
JPH0790675A (ja) * 1993-09-21 1995-04-04 Murata Mfg Co Ltd 電子部品の製造方法
US5750017A (en) * 1996-08-21 1998-05-12 Lucent Technologies Inc. Tin electroplating process
US6361823B1 (en) 1999-12-03 2002-03-26 Atotech Deutschland Gmbh Process for whisker-free aqueous electroless tin plating
US20020187364A1 (en) * 2001-03-16 2002-12-12 Shipley Company, L.L.C. Tin plating
DE10132478C1 (de) * 2001-07-03 2003-04-30 Atotech Deutschland Gmbh Verfahren zum Abscheiden einer Metallschicht sowie Verfahren zum Regenerieren einer Metallionen in einer hohen Oxidationsstufe enthaltenden Lösung
JP2005109373A (ja) * 2003-10-02 2005-04-21 Fuji Electric Device Technology Co Ltd 半導体装置
WO2007002424A1 (en) 2005-06-24 2007-01-04 Technic, Inc. Silver barrier layer to minimize whisker growth in tin electrodeposits
JP2007284762A (ja) 2006-04-18 2007-11-01 Sumitomo Metal Mining Co Ltd スズめっき皮膜の形成方法および半導体装置
JP4847898B2 (ja) * 2007-03-07 2011-12-28 日立電線株式会社 配線用導体およびその製造方法
EP2014798B1 (en) 2007-07-10 2016-04-13 ATOTECH Deutschland GmbH Solution and process for increasing the solderability and corrosion resistance of metal or metal alloy surface
JP5086485B1 (ja) 2011-09-20 2012-11-28 Ｊｘ日鉱日石金属株式会社 電子部品用金属材料及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003003292A (ja) 2001-05-11 2003-01-08 Lucent Technol Inc 被覆金属製品
JP2006307328A (ja) 2005-03-28 2006-11-09 Sony Corp 無鉛Ｓｎベースめっき膜及びその製造方法、並びに接続部品の接点構造

Also Published As

Publication number Publication date
EP3529398A1 (en) 2019-08-28
MY192687A (en) 2022-09-01
CN109844182A (zh) 2019-06-04
WO2018077874A1 (en) 2018-05-03
JP2019533088A (ja) 2019-11-14
US20190271093A1 (en) 2019-09-05
SG11201902595UA (en) 2019-05-30
EP3529398B1 (en) 2022-10-19
KR20190070958A (ko) 2019-06-21
KR102404045B1 (ko) 2022-05-30

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