JP2019533088A - 金属基板へのスズ層の被覆方法、および、ニッケル/リン合金下層と、前記方法による前記スズ層と、を備えた構造の使用 - Google Patents
金属基板へのスズ層の被覆方法、および、ニッケル/リン合金下層と、前記方法による前記スズ層と、を備えた構造の使用 Download PDFInfo
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- JP2019533088A JP2019533088A JP2019521768A JP2019521768A JP2019533088A JP 2019533088 A JP2019533088 A JP 2019533088A JP 2019521768 A JP2019521768 A JP 2019521768A JP 2019521768 A JP2019521768 A JP 2019521768A JP 2019533088 A JP2019533088 A JP 2019533088A
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- Prior art keywords
- tin
- nickel
- coating
- layer
- tin layer
- Prior art date
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- Granted
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims abstract description 337
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title claims abstract description 299
- 229910052718 tin Inorganic materials 0.000 title claims abstract description 290
- 238000000576 coating method Methods 0.000 title claims abstract description 132
- 239000000758 substrate Substances 0.000 title claims abstract description 120
- 238000000034 method Methods 0.000 title claims abstract description 115
- 239000011248 coating agent Substances 0.000 title claims abstract description 99
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 63
- 239000002184 metal Substances 0.000 title claims abstract description 63
- 229910000990 Ni alloy Inorganic materials 0.000 title claims description 28
- 229910001096 P alloy Inorganic materials 0.000 title claims description 25
- 238000007747 plating Methods 0.000 claims abstract description 213
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 144
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 70
- 239000000956 alloy Substances 0.000 claims abstract description 70
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims abstract description 63
- 230000015572 biosynthetic process Effects 0.000 claims description 89
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 66
- 239000004332 silver Substances 0.000 claims description 65
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- 229910001316 Ag alloy Inorganic materials 0.000 claims description 39
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- 239000011574 phosphorus Substances 0.000 claims description 14
- 229910052698 phosphorus Inorganic materials 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000011135 tin Substances 0.000 description 280
- 239000010410 layer Substances 0.000 description 193
- 239000000243 solution Substances 0.000 description 136
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- 239000010949 copper Substances 0.000 description 52
- 238000009713 electroplating Methods 0.000 description 46
- 230000000052 comparative effect Effects 0.000 description 44
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- -1 copper atoms Chemical class 0.000 description 24
- 241000894007 species Species 0.000 description 24
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- 239000002585 base Substances 0.000 description 14
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- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
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- 238000011282 treatment Methods 0.000 description 8
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 7
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- 210000001787 dendrite Anatomy 0.000 description 7
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- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 7
- 239000002736 nonionic surfactant Substances 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
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- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 6
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 6
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 6
- 239000000872 buffer Substances 0.000 description 6
- 229910017052 cobalt Inorganic materials 0.000 description 6
- 239000010941 cobalt Substances 0.000 description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
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- 229910052500 inorganic mineral Inorganic materials 0.000 description 6
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- 229940098779 methanesulfonic acid Drugs 0.000 description 6
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- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 6
- 229910001432 tin ion Inorganic materials 0.000 description 6
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- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 5
- 150000007513 acids Chemical class 0.000 description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000007772 electroless plating Methods 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 229910021645 metal ion Inorganic materials 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 4
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 4
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 4
- 150000001768 cations Chemical class 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000004070 electrodeposition Methods 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine Substances NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
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- 230000007246 mechanism Effects 0.000 description 4
- 229910001092 metal group alloy Inorganic materials 0.000 description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 4
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- 230000010287 polarization Effects 0.000 description 4
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- 239000011734 sodium Substances 0.000 description 4
- 230000001629 suppression Effects 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- SYRHIZPPCHMRIT-UHFFFAOYSA-N tin(4+) Chemical compound [Sn+4] SYRHIZPPCHMRIT-UHFFFAOYSA-N 0.000 description 4
- 238000009736 wetting Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
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- 229910002651 NO3 Inorganic materials 0.000 description 3
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 3
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 3
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- 125000002091 cationic group Chemical group 0.000 description 3
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- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
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- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 2
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- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 2
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- 239000007769 metal material Substances 0.000 description 2
- AICMYQIGFPHNCY-UHFFFAOYSA-J methanesulfonate;tin(4+) Chemical compound [Sn+4].CS([O-])(=O)=O.CS([O-])(=O)=O.CS([O-])(=O)=O.CS([O-])(=O)=O AICMYQIGFPHNCY-UHFFFAOYSA-J 0.000 description 2
- 150000002815 nickel Chemical class 0.000 description 2
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 2
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 2
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- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
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- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
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- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
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- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- UORVGPXVDQYIDP-BJUDXGSMSA-N borane Chemical class [10BH3] UORVGPXVDQYIDP-BJUDXGSMSA-N 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- KXZJHVJKXJLBKO-UHFFFAOYSA-N chembl1408157 Chemical compound N=1C2=CC=CC=C2C(C(=O)O)=CC=1C1=CC=C(O)C=C1 KXZJHVJKXJLBKO-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000004675 formic acid derivatives Chemical class 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- RVPVRDXYQKGNMQ-UHFFFAOYSA-N lead(2+) Chemical compound [Pb+2] RVPVRDXYQKGNMQ-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- CXIHYTLHIDQMGN-UHFFFAOYSA-L methanesulfonate;nickel(2+) Chemical compound [Ni+2].CS([O-])(=O)=O.CS([O-])(=O)=O CXIHYTLHIDQMGN-UHFFFAOYSA-L 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- OQTOQAYHQVKZET-UHFFFAOYSA-N oxalonitrile;silver Chemical compound [Ag].N#CC#N OQTOQAYHQVKZET-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- UEZVMMHDMIWARA-UHFFFAOYSA-M phosphonate Chemical compound [O-]P(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-M 0.000 description 1
- HKSGQTYSSZOJOA-UHFFFAOYSA-N potassium argentocyanide Chemical compound [K+].[Ag+].N#[C-].N#[C-] HKSGQTYSSZOJOA-UHFFFAOYSA-N 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 1
- 229940081974 saccharin Drugs 0.000 description 1
- 235000019204 saccharin Nutrition 0.000 description 1
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229940100890 silver compound Drugs 0.000 description 1
- LFAGQMCIGQNPJG-UHFFFAOYSA-N silver cyanide Chemical compound [Ag+].N#[C-] LFAGQMCIGQNPJG-UHFFFAOYSA-N 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229960002317 succinimide Drugs 0.000 description 1
- VYECFMCAAHMRNW-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O.NS(O)(=O)=O VYECFMCAAHMRNW-UHFFFAOYSA-N 0.000 description 1
- FDDDEECHVMSUSB-UHFFFAOYSA-N sulfanilamide Chemical compound NC1=CC=C(S(N)(=O)=O)C=C1 FDDDEECHVMSUSB-UHFFFAOYSA-N 0.000 description 1
- 229940124530 sulfonamide Drugs 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- FAKFSJNVVCGEEI-UHFFFAOYSA-J tin(4+);disulfate Chemical compound [Sn+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O FAKFSJNVVCGEEI-UHFFFAOYSA-J 0.000 description 1
- AECLSPNOPRYXFI-UHFFFAOYSA-J tin(4+);tetrasulfamate Chemical compound [Sn+4].NS([O-])(=O)=O.NS([O-])(=O)=O.NS([O-])(=O)=O.NS([O-])(=O)=O AECLSPNOPRYXFI-UHFFFAOYSA-J 0.000 description 1
- LTSUHJWLSNQKIP-UHFFFAOYSA-J tin(iv) bromide Chemical compound Br[Sn](Br)(Br)Br LTSUHJWLSNQKIP-UHFFFAOYSA-J 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 229910000597 tin-copper alloy Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- YJGJRYWNNHUESM-UHFFFAOYSA-J triacetyloxystannyl acetate Chemical compound [Sn+4].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O YJGJRYWNNHUESM-UHFFFAOYSA-J 0.000 description 1
- YQMWDQQWGKVOSQ-UHFFFAOYSA-N trinitrooxystannyl nitrate Chemical compound [Sn+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O YQMWDQQWGKVOSQ-UHFFFAOYSA-N 0.000 description 1
- BSVBQGMMJUBVOD-UHFFFAOYSA-N trisodium borate Chemical compound [Na+].[Na+].[Na+].[O-]B([O-])[O-] BSVBQGMMJUBVOD-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
- C25D5/14—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
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- C25D5/34—Pretreatment of metallic surfaces to be electroplated
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- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
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- C25D7/00—Electroplating characterised by the article coated
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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Abstract
Description
(a)金属基板を提供し、
(b)前記金属基板の少なくとも一つの表面にニッケル/リン合金下層を被覆し、
(c)前記ニッケル/リン合金下層に前記スズ層を被覆する、
ことを備え、
前記スズ層の被覆は、パルスめっき法を用いることを備え、
前記パルスめっき法は、単極性パルスめっき法であり、この単極性パルスめっき法は、それぞれカソードパルス部分(section)およびゼロ電流パルス部分(section)を備えた、連続するパルス時間(pulse periods)を備え、
前記ゼロ電流パルス部分は、少なくとも0.1秒のゼロ電流パルス幅(pulse duration)を有する。
本明細書中に記載の比率および範囲の限界値は組み合わせられてもよい。例えば30〜100の範囲が記載され、50〜70の範囲が記載されている場合、30〜70の範囲および70〜100の範囲は記載されているとみなされる。
従来の方法で銅板を前処理することにより、すなわち、アルカリ洗浄剤で銅板を陰極的(cathodically)に洗浄し、次いで酸性洗浄剤で銅板をエッチングし、最後に希硫酸で活性化することにより、比較例の試験試料を作成した。
標準状態で作用する通常のワット(Watts)ニッケル電気めっき浴を用いて清浄な銅板に純ニッケルを被覆した。電気めっきはDC電流を用いて行った。得られたニッケル被覆の厚さを表2に示す。
メタンスルホン酸スズ/メタンスルホン酸ベースで構成されたスズ電気めっき浴を用いてスズを電気めっきした。銅板にパルス電流を印加することによりスズ層を得た。
本発明による試験試料を、比較例1,2に用いた試験片と同様に作成した。次いで洗浄した板に様々な被覆を表1に示すように設けた。そのため銅板を再び表2に示す条件下でめっきした。ニッケルおよびスズ被覆の作成に用いられるめっき浴は、比較例1,2を参照して前述したものであった。ニッケル/リン合金層と銀最上層の作成に用いためっき浴、および、それらの被覆の作成に用いた条件を以下に示す。
先に銅板上に被覆したニッケル被覆(第1の層)の上に、第2の下層(下層2)としてニッケル/リン合金を電気めっきした(実施例3,4)。ニッケル/リン電気めっき浴は、被覆にリンを含めるためのリン源として、ホスホン酸ナトリウム(Na2HPO3)を含む通常のめっき浴であった。めっき浴中のニッケルイオン濃度は120g/l、めっき浴のpHは1.5、温度は65°Cであった。DC電流を用いることにより電気めっきを行った。ニッケル被覆の厚さは表2に示す通りであった。
実施例4の場合では、アトテック・ドイチュランド・ゲーエムベーハーのArgalux(登録商標)NC mod 電気めっき浴を用いることにより、スズ層に銀最上層を被覆した。この浴は非シアン化物ベースで構成される。pHは8.8、温度は20°Cであった。DC電流を用いることにより電気めっきを行った。銀被覆の厚さは表2に示す通りであった。
銅板を前述のように前処理し、前述の条件下、表3に示した各金属被覆で被覆した。銅板を表4に示す条件下でめっきした。得られたニッケル堆積物の厚さは表4に示す通りであった。スズ電気めっきにおけるカソードパルス電流部分のパルス幅およびカソードピーク電流密度もまた表4に示す通りであった。めっき液の組成およびめっき条件は本明細書の上記例1,2,3,4に記載の通りであった。
本発明による試験試料を比較例5で用いた試験片と同様の方法で作成した。清浄な銅板には、表3に示すように様々な金属被覆を設けた。そのため銅板を再び表4に示す条件下でめっきした。得られたニッケル、ニッケル/リン合金、および銀被覆の厚さは表4に示す通りであった。スズ電気めっきにおけるカソードパルス電流部分のパルス幅およびカソードピーク電流密度はまた表4に示す通りであった。ニッケル、ニッケル/リン合金、スズ、および銀被覆の作成に用いられるめっき浴ならびにそれらの作成に用いられる条件は、本明細書の上記例1,2,3,4に示す通りであった。
銅板の2つの試験片を前述のように前処理し、前述の条件下、表3に示した各金属被覆で被覆した。銅板を表4に示す条件下でめっきした。得られたニッケル堆積物の厚さは表4に示す通りであった。カソードパルス電流部分のパルス幅およびカソードピーク電流密度もまた表4に示す通りであった。めっき液の組成およびめっき条件は本明細書の上記例1,2,3,4に記載の通りであった。
銅板の2つの試験片を、それぞれ、比較例7A,7Bで用いた試験片と同様の方法で前処理した。
銅板の幾つかの試験片を前述のように前処理し、比較例7A,7B(比較例:ニッケル被覆、スズ被覆)の試料と同様に各金属被覆でめっきした。比較例7A,7Bについて表4に示す条件下で銅板をめっきした。得られたニッケル堆積物の厚さは表4に示す通りであった。スズ電気めっきにおけるカソードパルス電流部分のパルス幅およびカソードピーク電流密度もまた表4に示す通りであった。めっき液の組成およびめっき条件は本明細書の上記例1,2,3,4に記載の通りであった。
銅板の幾つかの試験片を前述のように前処理し、比較例1に記載の条件下でスズ堆積物のみをめっきした。スズ電気めっきにおけるカソードパルス電流部分のパルス幅およびカソードピーク電流密度もまた比較例1について表2に示す通りであった。スズめっき液の組成は本明細書の上記比較例1について記載の通りであった。
銅板の2つの試験片を、それぞれ、比較例7A,7Bで用いた試験片と同様の方法で前処理した。
銅板の2つの試験片を、それぞれ、比較例7A,7Bで用いた試験片と同様の方法で前処理した。
銅板の幾つかの試験片を前述のように前処理し、実施例8(ニッケル被覆、ニッケル/リン合金被覆、スズ被覆)の試料と同様に各金属被覆でめっきした。銅板を表7に示す条件下でめっきした。パルス幅を変化させた。全ての例における平均電流密度は15A/dm2であった。得られたニッケル、ニッケル/リン、およびスズ被覆の厚さは表7に示す通りであった。スズ電気めっきにおけるカソードパルス電流部分のパルス幅およびカソードピーク電流密度もまた表7に示す通りであった。めっき液の組成およびめっき条件は本明細書の上記例1,2,3,4に記載の通りであった。
11…基板
12…保持機構
13…ガイド要素
14…貫通開口部
15…固定ブラケット
16…ねじ穴
17…ねじ付きボルト
18…圧子の前面
20…圧子
21…圧子先端部
A…平坦な領域、押込み部
C…半円
P…基板試料
R…隆起部
S…短絡長さ(shorting length)
Smean…平均短絡長さ(mean shorting length)
Sn…スズ層
Claims (17)
- 金属基板へのスズ層の被覆方法であって、
(a)前記金属基板を提供し、
(b)前記金属基板の少なくとも一つの表面にニッケル/リン合金下層を被覆し、
(c)前記ニッケル/リン合金下層に前記スズ層を被覆する、
ことを備え、
前記スズ層の被覆は、パルスめっき法を用いることを備え、
前記パルスめっき法は、単極性パルスめっき法であり、この単極性パルスめっき法は、それぞれカソードパルス部分およびゼロ電流パルス部分を備えた、連続するパルス時間を備え、
前記ゼロ電流パルス部分は、少なくとも0.1秒のゼロ電流パルス幅を有する、被覆方法。 - (b1)前記ステップ(c)において前記スズ層を被覆する前に、前記基板の少なくとも一つの表面にニッケル下層を被覆することをさらに備えた請求項1に記載の被覆方法。
- 前記ステップ(b)において前記ニッケル/リン合金下層を被覆する前に、前記ニッケル下層を被覆することを特徴とする請求項2に記載の被覆方法。
- 前記ニッケル/リン合金下層が、5重量%〜15重量%のリン含有量のリンを備えることを特徴とする請求項1〜3のいずれか一項に記載の被覆方法。
- 前記ステップ(b1),(b)が、前記ニッケル下層および前記ニッケル/リン合金下層を備えた二重層を被覆することを備え、前記二重層は、0.01μm〜10μmの厚さを有することを特徴とする請求項2〜4のうちいずれか一項に記載の被覆方法。
- 前記ステップ(b1),(b)が、0.05μm〜5μmの厚さを有する前記二重層を被覆することを備えることを特徴とする請求項5に記載の被覆方法。
- 前記方法が、さらに
(d)前記スズ層に銀または銀合金の最上層を被覆することをさらに備えることを特徴とする請求項1〜6のうちいずれか一項に記載の被覆方法。 - 前記ステップ(d)が、前記銀または銀合金の最上層を0.01μm〜0.5μmの厚さで被覆することを備えることを特徴とする請求項7に記載の被覆方法。
- 前記ステップ(c)が、前記スズ層を0.1μm〜10μmの厚さで被覆することを備えることを特徴とする請求項1〜8のうちいずれか一項に記載の被覆方法。
- 前記カソードパルス部分は、0.1秒〜10秒のカソード電流パルス幅を有し、前記ゼロ電流パルス部分は、0.1秒〜10秒のゼロ電流パルス幅を有することを特徴とする請求項1〜9のうちいずれか一項に記載の被覆方法。
- 前記単極性パルスめっき法の周波数は、0.05s-1〜5s-1であることを特徴とする請求項1〜10のうちいずれか一項に記載の被覆方法。
- 前記カソードパルス部分は、1A/dm2〜60A/dm2のカソードパルスピーク電流密度を有することを特徴とする請求項1〜11のうちいずれか一項に記載の被覆方法。
- 前記スズ層には、圧力誘起されたウィスカが無いことを特徴とする請求項1〜12のうちいずれか一項に記載の被覆方法。
- 前記スズ層に圧力誘起されたウィスカが無いことが、前記スズ層に所定圧力の機械的応力を所定期間の間、印加することによって判定されることを特徴とする請求項13に記載の被覆方法。
- 前記所定圧力が0.001Nm〜100Nmであり、前記所定期間が1分〜前記めっきされた基板の耐用期間の終了までの範囲に及ぶことを特徴とする請求項14に記載の被覆方法。
- 金属基板上に被覆されたニッケル/リン合金下層と、圧力誘起によるウィスカの形成を防止するように請求項1〜15のいずれかに記載の方法によってパルス電気めっきされたスズ層と、を備えた構造の使用。
- 圧力誘起されたウィスカの無いスズ層を有する、電子装置における電子回路の製造のための請求項1〜15に記載の方法の使用であって、前記スズ層に圧力誘起されたウィスカが無いことが、前記スズ層に所定圧力の機械的応力を所定期間の間、印加することによって判定される、請求項1〜15に記載の方法の使用。
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US11788199B2 (en) * | 2019-02-25 | 2023-10-17 | Tata Steel Ijmuiden B.V. | Method for electrolytically depositing a chromium oxide layer |
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