JP6979881B2 - 多層金属誘電体膜のｐｖｄ堆積とアニール - Google Patents

多層金属誘電体膜のｐｖｄ堆積とアニール Download PDF

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JP6979881B2
JP6979881B2 JP2017565799A JP2017565799A JP6979881B2 JP 6979881 B2 JP6979881 B2 JP 6979881B2 JP 2017565799 A JP2017565799 A JP 2017565799A JP 2017565799 A JP2017565799 A JP 2017565799A JP 6979881 B2 JP6979881 B2 JP 6979881B2
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substrate
metal
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JP2018527456A (ja
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ミンルイ ユイ，
カイ マー，
トーマス クォン，
カウシャル ケー． シン，
アル−シュアン ピン，
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Applied Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/418—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/075—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers of multilayered thin functional dielectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Non-Volatile Memory (AREA)
  • General Chemical & Material Sciences (AREA)
  • Laminated Bodies (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2017565799A 2015-06-19 2016-06-03 多層金属誘電体膜のｐｖｄ堆積とアニール Active JP6979881B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/745,367 2015-06-19
US14/745,367 US10879177B2 (en) 2015-06-19 2015-06-19 PVD deposition and anneal of multi-layer metal-dielectric film
PCT/US2016/035826 WO2016204987A1 (en) 2015-06-19 2016-06-03 Pvd deposition and anneal of multi-layer metal-dielectric film

Publications (3)

Publication Number Publication Date
JP2018527456A JP2018527456A (ja) 2018-09-20
JP2018527456A5 JP2018527456A5 (https=) 2019-08-29
JP6979881B2 true JP6979881B2 (ja) 2021-12-15

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US (1) US10879177B2 (https=)
JP (1) JP6979881B2 (https=)
KR (1) KR102506953B1 (https=)
CN (1) CN107873107B (https=)
TW (1) TWI705149B (https=)
WO (1) WO2016204987A1 (https=)

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TW202411448A (zh) 2022-05-02 2024-03-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括摻雜黏著膜的結構之方法

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4930357B1 (https=) * 1970-12-30 1974-08-12
US3852078A (en) * 1970-12-24 1974-12-03 M Wakatsuki Mass of polycrystalline cubic system boron nitride and composites of polycrystalline cubic system boron nitride and other hard materials, and processes for manufacturing the same
US5272367A (en) 1988-05-02 1993-12-21 Micron Technology, Inc. Fabrication of complementary n-channel and p-channel circuits (ICs) useful in the manufacture of dynamic random access memories (drams)
JPH0493362A (ja) * 1990-08-10 1992-03-26 Toshiba Ceramics Co Ltd 電子部品封止用充填剤およびその製造方法
JPH05267471A (ja) * 1991-04-05 1993-10-15 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
ATE145195T1 (de) * 1992-07-11 1996-11-15 Pilkington Uk Ltd Verfahren zur herstellung von reflektierenden schichten auf glas und nach diesem verfahren hergestellte spiegel
US5700718A (en) * 1996-02-05 1997-12-23 Micron Technology, Inc. Method for increased metal interconnect reliability in situ formation of titanium aluminide
US6231999B1 (en) * 1996-06-21 2001-05-15 Cardinal Ig Company Heat temperable transparent coated glass article
US5994217A (en) * 1996-12-16 1999-11-30 Chartered Semiconductor Manufacturing Ltd. Post metallization stress relief annealing heat treatment for ARC TiN over aluminum layers
US6437441B1 (en) * 1997-07-10 2002-08-20 Kawasaki Microelectronics, Inc. Wiring structure of a semiconductor integrated circuit and a method of forming the wiring structure
US6136682A (en) * 1997-10-20 2000-10-24 Motorola Inc. Method for forming a conductive structure having a composite or amorphous barrier layer
US6011646A (en) * 1998-02-20 2000-01-04 The Regents Of The Unviersity Of California Method to adjust multilayer film stress induced deformation of optics
US6042929A (en) * 1998-03-26 2000-03-28 Alchemia, Inc. Multilayer metalized composite on polymer film product and process
JP4766724B2 (ja) * 1999-06-22 2011-09-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6475581B2 (en) * 1999-12-21 2002-11-05 E.I. Du Pont De Nemours And Company Clay coatings for thermoplastic polymeric resins or films
JP4578777B2 (ja) 2003-02-07 2010-11-10 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP2005033095A (ja) 2003-07-10 2005-02-03 Hitachi Powdered Metals Co Ltd 熱電変換素子用熱応力緩和パッドの製造方法
US7566900B2 (en) * 2005-08-31 2009-07-28 Applied Materials, Inc. Integrated metrology tools for monitoring and controlling large area substrate processing chambers
US7416995B2 (en) * 2005-11-12 2008-08-26 Applied Materials, Inc. Method for fabricating controlled stress silicon nitride films
CN101395521B (zh) * 2006-03-03 2010-09-29 金泰克斯公司 改进的薄膜涂层、光电元件和包含这些元件的组件
EP2426552A1 (en) * 2006-03-03 2012-03-07 Gentex Corporation Electro-optic elements incorporating improved thin-film coatings
US7695232B2 (en) * 2006-06-15 2010-04-13 Applied Materials, Inc. Multi-level load lock chamber, transfer chamber, and robot suitable for interfacing with same
EP2041774A2 (en) 2006-07-03 2009-04-01 Applied Materials, Inc. Cluster tool for advanced front-end processing
TWI343630B (en) 2007-05-15 2011-06-11 Nanya Technology Corp Method for forming a semiconductor structure
KR100881716B1 (ko) * 2007-07-02 2009-02-06 주식회사 하이닉스반도체 낮은 시트저항의 텅스텐막을 갖는 텅스텐배선 제조 방법 및그를 이용한 반도체소자의 게이트 제조 방법
US20090051026A1 (en) 2007-08-20 2009-02-26 International Business Machines Corporation Process for forming metal film and release layer on polymer
KR100902106B1 (ko) * 2007-10-31 2009-06-09 주식회사 하이닉스반도체 텅스텐함유막이 포함된 패턴을 구비한 반도체소자의 제조방법
KR101015125B1 (ko) * 2008-03-21 2011-02-16 주식회사 하이닉스반도체 계면반응배리어를 구비한 반도체장치 제조 방법
CN101323945A (zh) * 2008-07-25 2008-12-17 西南大学 含应力缓和层的硬质薄膜及其制备方法
TW201036065A (en) * 2009-03-20 2010-10-01 Nanya Technology Corp Method of forming multi metal layers thin film on wafer
US8209857B2 (en) * 2009-06-19 2012-07-03 The Regents Of The University Of Michigan Method of making a thin film device
US8338856B2 (en) * 2010-08-10 2012-12-25 Omnivision Technologies, Inc. Backside illuminated image sensor with stressed film
US20120097234A1 (en) 2010-10-26 2012-04-26 International Business Machines Corporation Using Diffusion Barrier Layer for CuZnSn(S,Se) Thin Film Solar Cell
US8530294B2 (en) 2011-10-21 2013-09-10 Taiwan Semiconductor Manufacturing Company, Ltd. Stress modulation for metal gate semiconductor device
US9087839B2 (en) 2013-03-29 2015-07-21 International Business Machines Corporation Semiconductor structures with metal lines
CN104388899A (zh) * 2014-12-10 2015-03-04 武汉大学 一种具有MoN/Cr/CrN/Cr纳米复合超厚涂层的活塞环及其制备方法

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Publication number Publication date
CN107873107B (zh) 2022-01-28
TW201704508A (zh) 2017-02-01
TWI705149B (zh) 2020-09-21
KR20180010333A (ko) 2018-01-30
KR102506953B1 (ko) 2023-03-08
WO2016204987A1 (en) 2016-12-22
US20160372330A1 (en) 2016-12-22
US10879177B2 (en) 2020-12-29
CN107873107A (zh) 2018-04-03
JP2018527456A (ja) 2018-09-20

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