JP6972665B2 - 発光装置、プロジェクター、および発光装置の製造方法 - Google Patents

発光装置、プロジェクター、および発光装置の製造方法 Download PDF

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Publication number
JP6972665B2
JP6972665B2 JP2017108346A JP2017108346A JP6972665B2 JP 6972665 B2 JP6972665 B2 JP 6972665B2 JP 2017108346 A JP2017108346 A JP 2017108346A JP 2017108346 A JP2017108346 A JP 2017108346A JP 6972665 B2 JP6972665 B2 JP 6972665B2
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Prior art keywords
light emitting
substrate
emitting device
electrode
semiconductor layer
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JP2017108346A
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Japanese (ja)
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JP2018206860A5 (enExample
JP2018206860A (ja
Inventor
浩康 加▲瀬▼谷
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Seiko Epson Corp
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Seiko Epson Corp
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Priority to JP2017108346A priority Critical patent/JP6972665B2/ja
Priority to US16/618,088 priority patent/US11239390B2/en
Priority to CN201880034936.2A priority patent/CN110678991B/zh
Priority to PCT/JP2018/019841 priority patent/WO2018221351A1/ja
Publication of JP2018206860A publication Critical patent/JP2018206860A/ja
Publication of JP2018206860A5 publication Critical patent/JP2018206860A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8585—Means for heat extraction or cooling being an interconnection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages

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  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Projection Apparatus (AREA)
  • Led Devices (AREA)
JP2017108346A 2017-05-31 2017-05-31 発光装置、プロジェクター、および発光装置の製造方法 Active JP6972665B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017108346A JP6972665B2 (ja) 2017-05-31 2017-05-31 発光装置、プロジェクター、および発光装置の製造方法
US16/618,088 US11239390B2 (en) 2017-05-31 2018-05-23 Light emitting apparatus, projector, method for manufacturing light emitting apparatus
CN201880034936.2A CN110678991B (zh) 2017-05-31 2018-05-23 发光装置、投影仪以及发光装置的制造方法
PCT/JP2018/019841 WO2018221351A1 (ja) 2017-05-31 2018-05-23 発光装置、プロジェクター、および発光装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017108346A JP6972665B2 (ja) 2017-05-31 2017-05-31 発光装置、プロジェクター、および発光装置の製造方法

Publications (3)

Publication Number Publication Date
JP2018206860A JP2018206860A (ja) 2018-12-27
JP2018206860A5 JP2018206860A5 (enExample) 2020-07-02
JP6972665B2 true JP6972665B2 (ja) 2021-11-24

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JP2017108346A Active JP6972665B2 (ja) 2017-05-31 2017-05-31 発光装置、プロジェクター、および発光装置の製造方法

Country Status (4)

Country Link
US (1) US11239390B2 (enExample)
JP (1) JP6972665B2 (enExample)
CN (1) CN110678991B (enExample)
WO (1) WO2018221351A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018206861A (ja) * 2017-05-31 2018-12-27 セイコーエプソン株式会社 発光装置、プロジェクター、および発光装置の製造方法

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JP6954562B2 (ja) * 2017-09-15 2021-10-27 セイコーエプソン株式会社 発光装置およびその製造方法、ならびにプロジェクター
US20200091388A1 (en) 2018-09-19 2020-03-19 Vuereal Inc. Highly efficient microdevices
JP2021150373A (ja) * 2020-03-17 2021-09-27 セイコーエプソン株式会社 発光装置、プロジェクター、およびディスプレイ
JP7776817B2 (ja) * 2021-09-13 2025-11-27 セイコーエプソン株式会社 発光装置、プロジェクター、およびディスプレイ
JP2024108649A (ja) * 2023-01-31 2024-08-13 ウシオ電機株式会社 光源装置

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JP2000261088A (ja) 1999-03-05 2000-09-22 Hitachi Ltd 発光素子
US7022550B2 (en) * 2004-04-07 2006-04-04 Gelcore Llc Methods for forming aluminum-containing p-contacts for group III-nitride light emitting diodes
KR100624419B1 (ko) * 2004-04-07 2006-09-19 삼성전자주식회사 나노와이어 발광소자 및 그 제조방법
JP2008047850A (ja) 2006-07-19 2008-02-28 Mitsubishi Cable Ind Ltd 窒化物半導体発光ダイオード素子
JP2007235122A (ja) * 2006-02-02 2007-09-13 Matsushita Electric Ind Co Ltd 半導体発光装置及びその製造方法
US7786491B2 (en) * 2006-02-02 2010-08-31 Panasonic Corporation Semiconductor light-emitting device comprising a plurality of semiconductor layers
JP5029079B2 (ja) * 2007-03-15 2012-09-19 富士ゼロックス株式会社 半導体素子および光学装置
JP4984170B2 (ja) * 2008-04-01 2012-07-25 日本電信電話株式会社 光半導体素子の実装構造
US20100038670A1 (en) * 2008-08-18 2010-02-18 Luminus Devices, Inc. Illumination assembly including chip-scale packaged light-emitting device
KR101567121B1 (ko) * 2008-09-01 2015-11-06 가꼬호징 조찌가꾸잉 반도체 광소자 어레이 및 그의 제조방법
WO2010033792A1 (en) * 2008-09-18 2010-03-25 Lumenz Llc Textured semiconductor light-emitting devices
JP2010153561A (ja) * 2008-12-25 2010-07-08 Nichia Corp 発光装置
CN101859824A (zh) * 2009-04-07 2010-10-13 山东璨圆光电科技有限公司 双回路电极设计的发光二极管芯片
JP5679117B2 (ja) * 2011-03-09 2015-03-04 セイコーエプソン株式会社 発光装置、照射装置、およびプロジェクター
JP2013042079A (ja) 2011-08-19 2013-02-28 Sharp Corp 半導体発光装置
WO2013161208A1 (ja) * 2012-04-27 2013-10-31 パナソニック株式会社 発光素子
JP2015056652A (ja) * 2013-09-13 2015-03-23 株式会社東芝 窒化物半導体発光装置
KR20150035111A (ko) * 2013-09-27 2015-04-06 서울바이오시스 주식회사 주변 발광부를 구비하는 발광다이오드 칩
US10304998B2 (en) * 2013-09-27 2019-05-28 Seoul Viosys Co., Ltd. Light emitting diode chip and light emitting device having the same
US10910350B2 (en) * 2014-05-24 2021-02-02 Hiphoton Co., Ltd. Structure of a semiconductor array
CN204144306U (zh) * 2014-09-16 2015-02-04 惠州比亚迪实业有限公司 Led芯片
CA2992154A1 (en) * 2015-07-13 2017-01-19 Crayonano As Nanowires/nanopyramids shaped light emitting diodes and photodetectors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018206861A (ja) * 2017-05-31 2018-12-27 セイコーエプソン株式会社 発光装置、プロジェクター、および発光装置の製造方法
JP7147132B2 (ja) 2017-05-31 2022-10-05 セイコーエプソン株式会社 発光装置、プロジェクター、および発光装置の製造方法

Also Published As

Publication number Publication date
US11239390B2 (en) 2022-02-01
WO2018221351A1 (ja) 2018-12-06
CN110678991B (zh) 2022-12-23
JP2018206860A (ja) 2018-12-27
US20200152833A1 (en) 2020-05-14
CN110678991A (zh) 2020-01-10

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