JP6967292B2 - 発光素子 - Google Patents
発光素子 Download PDFInfo
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- JP6967292B2 JP6967292B2 JP2018535275A JP2018535275A JP6967292B2 JP 6967292 B2 JP6967292 B2 JP 6967292B2 JP 2018535275 A JP2018535275 A JP 2018535275A JP 2018535275 A JP2018535275 A JP 2018535275A JP 6967292 B2 JP6967292 B2 JP 6967292B2
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- 239000004065 semiconductor Substances 0.000 claims description 84
- 230000007480 spreading Effects 0.000 claims description 65
- 238000003892 spreading Methods 0.000 claims description 65
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 39
- 239000000126 substance Substances 0.000 claims description 33
- 230000000903 blocking effect Effects 0.000 claims description 10
- 239000007769 metal material Substances 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 395
- 230000000052 comparative effect Effects 0.000 description 27
- 230000020169 heat generation Effects 0.000 description 20
- 239000000463 material Substances 0.000 description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 229910052791 calcium Inorganic materials 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 229910052712 strontium Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 229910019897 RuOx Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- KWXIRYKCFANFRC-UHFFFAOYSA-N [O--].[O--].[O--].[Al+3].[In+3] Chemical compound [O--].[O--].[O--].[Al+3].[In+3] KWXIRYKCFANFRC-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000003287 bathing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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Description
Claims (19)
- 基板;
前記基板上に配置され、第1導電型半導体層、活性層および第2導電型半導体層を含む発光構造物;
前記第1導電型半導体層上に配置された第1オーミック層;
前記第2導電型半導体層上に配置された第2オーミック層;
前記第1オーミック層上に配置された第1バンプ;
前記第2オーミック層上に互いに離隔して配置された複数の第2バンプ;および
前記第2オーミック層と前記第2導電型半導体層との間に配置される電流遮断層;を含み、
前記第2オーミック層は、
前記複数の第2バンプの間に配置された第1領域を含み、
前記電流遮断層は、
前記第1領域上に水平方向に前記第2オーミック層と重なるように配置され、幅が前記第2オーミック層の幅より小さく、
前記水平方向は前記発光構造物の厚さ方向と交差し、
前記電流遮断層は空気を含むか、前記第2導電型半導体層とショットキー接触する物質を含む、発光素子。 - 前記第1領域は、
前記複数の第2バンプの間に配置された空間と前記発光構造物の厚さ方向に重なり、
前記第2オーミック層は、
前記発光構造物の厚さ方向と交差する水平方向に前記第1領域に隣接した第2領域をさらに含む、請求項1に記載の発光素子。 - 前記電流遮断層は、前記第1領域から前記第2領域まで延びて配置された、請求項2に記載の発光素子。
- 前記電流遮断層は、
前記第1領域に配置された第1セグメントを含む、請求項2に記載の発光素子。 - 前記電流遮断層は、
前記第1セグメントから前記第2領域まで延び、前記発光構造物の厚さ方向に前記複数の第2バンプとオーバーラップされる第2セグメントをさらに含む、請求項4に記載の発光素子。 - 前記第1セグメントは幅が10μm〜90μmであり、
前記第2セグメントは幅が5μm〜25μmである、請求項5に記載の発光素子。 - 前記基板に対向して配置されたサブマウント;
前記サブマウント上に互いに離隔して配置された第1および第2金属パッド;
前記第1オーミック層と前記第1バンプとの間に配置された第1スプレッディング層;および
前記第2オーミック層と前記複数の第2バンプとの間に配置された第2スプレッディング層;をさらに含む、 請求項1乃至6のいずれか1項に記載の発光素子。 - 前記電流遮断層は、
前記第2導電型半導体層と接する第1面;および
前記発光構造物の厚さ方向に前記第2スプレッディング層と対向し、前記第1面の反対側である第2面を含む、請求項7に記載の発光素子。 - 前記第2オーミック層は透光伝導性物質を含み、前記電流遮断層の前記第2面から前記第2スプレッディング層までの最短距離は1nm〜10nmである、請求項8に記載の発光素子。
- 前記第2オーミック層は金属物質を含み、前記電流遮断層の前記第2面から前記第2スプレッディング層までの最短距離は200nm以上である、請求項8又は9に記載の発光素子。
- 前記電流遮断層は絶縁物質を含む、請求項1乃至10のいずれか1項に記載の発光素子。
- 前記活性層は深紫外線波長帯域の光を放出する、請求項1乃至11のいずれか1項に記載の発光素子。
- 前記電流遮断層は、
前記複数の第2バンプと前記発光構造物の厚さ方向に一部が重なり、水平方向に配置された複数の電流遮断層を含む、請求項1乃至12のいずれか1項に記載の発光素子。 - 前記複数の電流遮断層は離隔して配置された、請求項13に記載の発光素子。
- 前記複数の電流遮断層は前記水平方向の幅が互いに同じである、請求項13又は14に記載の発光素子。
- 基板;
前記基板上に配置され、第1導電型半導体層、活性層および第2導電型半導体層を含む発光構造物;
前記発光構造物上に配置される電極層;
前記電極層上に配置される複数のバンプ;および
前記複数のバンプの間の領域で水平方向に前記電極層と重なるように配置され、前記電極層の幅より小さい電流遮断層を含み、
前記電流遮断層は空気を含むか、前記第2導電型半導体層とショットキー接触する物質を含む、発光素子。 - 前記電極層は、
前記発光構造物と前記複数のバンプとの間に配置されたオーミック層;および
前記オーミック層と前記複数のバンプとの間に配置されたスプレッディング層を含み、
前記電流遮断層は前記オーミック層に配置された、請求項16に記載の発光素子。 - 前記発光構造物は、
前記基板の下に配置された第1導電型半導体層;
前記第1導電型半導体層の下に配置された活性層;および
前記活性層の下に配置された第2導電型半導体層を含む、請求項17に記載の発光素子。 - 前記オーミック層は第1および第2オーミック層を含み、
前記スプレッディング層は第1および第2スプレッディング層を含み、
複数の金属パッドは第1および第2金属パッドを含み、
前記複数のバンプは、
前記第1スプレッディング層と前記第1金属パッドとの間に配置された第1バンプ;および
前記第2スプレッディング層と前記第2金属パッドとの間に配置された複数の第2バンプを含み、
前記電流遮断層は前記複数の第2バンプと前記発光構造物の厚さ方向に重なる領域まで前記水平方向に延びた、請求項17又は18に記載の発光素子。
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JP2006147630A (ja) * | 2004-11-16 | 2006-06-08 | Matsushita Electric Works Ltd | 半導体装置およびその評価方法 |
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JP5237854B2 (ja) | 2009-02-24 | 2013-07-17 | パナソニック株式会社 | 発光装置 |
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KR20170082719A (ko) | 2017-07-17 |
KR102465406B1 (ko) | 2022-11-09 |
US10541351B2 (en) | 2020-01-21 |
EP3401965B1 (en) | 2024-05-01 |
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