JP6959004B2 - 接続材料及び接続構造体 - Google Patents
接続材料及び接続構造体 Download PDFInfo
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- JP6959004B2 JP6959004B2 JP2016570116A JP2016570116A JP6959004B2 JP 6959004 B2 JP6959004 B2 JP 6959004B2 JP 2016570116 A JP2016570116 A JP 2016570116A JP 2016570116 A JP2016570116 A JP 2016570116A JP 6959004 B2 JP6959004 B2 JP 6959004B2
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/17—Metallic particles coated with metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
- B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
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Description
本発明に係る粒子は、2つの接続対象部材を接続する接続部を形成する接続材料を得るために用いられる粒子である。
F:粒子が10%圧縮変形したときの荷重値(N)
S:粒子が10%圧縮変形したときの圧縮変位(mm)
R:粒子の半径(mm)
ρ:粒子の粒子径の標準偏差
Dn:粒子の粒子径の平均値
本発明に係る粒子において、導電部を有さない粒子を、粒子Aと呼ぶ。本発明に係る粒子は、基材粒子と、該基材粒子の表面上に配置された導電部とを有していてもよい。
上記導電部の材料は特に限定されない。上記導電部の材料は、金属を含むことが好ましい。該金属としては、例えば、金、銀、パラジウム、銅、白金、亜鉛、鉄、錫、鉛、ルテニウム、アルミニウム、コバルト、インジウム、ニッケル、クロム、チタン、アンチモン、ビスマス、タリウム、ゲルマニウム、カドミウム、ケイ素及びこれらの合金等が挙げられる。また、上記金属としては、錫ドープ酸化インジウム(ITO)及びはんだ等が挙げられる。接続抵抗をより一層低くすることができるので、上記導電部の材料は、ニッケル、金、銀、銅、又は錫を含むことが好ましい。
後述する接続構造体を作製する場合等に、後述する金属原子含有粒子との密着性を向上させることを目的として、粒子の表面に、金属原子含有粒子が金属拡散しやすい金属微粒子を焼結促進剤として配置する方法、及び粒子の表面に、フラックスを焼結促進剤として配置する方法を採用してもよい。上記粒子は、金属微粒子を有していてもよく、フラックスを有していてもよい。
本発明に係る接続材料は、2つの接続対象部材を接続する接続部を形成するために用いられる。本発明に係る接続材料は、上述した粒子と、樹脂又は金属原子含有粒子とを含む。この場合に、上記接続材料は、上記樹脂及び上記金属原子含有粒子の内の少なくとも一方を含む。上記接続材料は、上記金属原子含有粒子を含むことが好ましい。本発明に係る接続材料は、金属原子含有粒子を溶融させた後に固化させることで、上記接続部を形成するために用いられることが好ましい。上記金属原子含有粒子には、本発明に係る粒子は含まれない。
本発明に係る接続構造体は、第1の接続対象部材と、第2の接続対象部材と、第1,第2の接続対象部材を接続している接続部とを備える。本発明に係る接続構造体では、上記接続部が、上記接続材料により形成されている。上記接続部の材料が、上記接続材料である。
1,3−ジビニルテトラメチルジシロキサン(東京化成工業社製)
ジメチルジメトキシシラン(信越化学工業社製「KBM−22」)
メチルビニルジメトキシシラン(東京化成工業社製)
メチルフェニルジメトキシシラン(東京化成工業社製)
メチルトリメトキシシラン(信越化学工業社製「KBM−13」)
イソプレン(和光純薬工業社製)
ジビニルベンゼン(新日鐵住金化学社製「DVB570」)
ポリテトラメチレングリコールジアクリレート(共栄社化学社製「ライトアクリレートPTMGA−250」)
1,4−ブタンジオールビニルエーテル(日本カーバイド工業社製「1,4−ブタンジオールビニルエーテル」)
ジイソブチレン(和光純薬工業社製)
フルオレンモノマー(大阪ガスケミカル社製「オグソールEA−0300」)
ジシクロペンタジエン(東京化成工業社製「DCPD」)
銀粒子(平均粒子径50nm、平均粒子径5μm)
酸化銀粒子(平均粒子径50nm、平均粒子径5μm)
銅粒子(平均粒子径50nm、平均粒子径5μm)
エポキシ樹脂(長瀬産業社製「EX−201」)
(1)シリコーンオリゴマーの作製
温浴槽内に設置した100mlのセパラブルフラスコに、1,3−ジビニルテトラメチルジシロキサン1重量部(表の重量%となる量)と、0.5重量%p−トルエンスルホン酸水溶液20重量部とを入れた。40℃で1時間撹拌した後、炭酸水素ナトリウム0.05重量部を添加した。その後、ジメチルジメトキシシラン30重量部(表の重量%となる量)、メチルビニルジメトキシシラン30重量部(表の重量%となる量)を添加し、1時間撹拌を行った。その後、10重量%水酸化カリウム水溶液1.9重量部を添加して、85℃まで昇温してアスピレーターで減圧しながら、10時間撹拌し、反応を行った。反応終了後、常圧に戻し40℃まで冷却して、酢酸0.2重量部を添加し、12時間以上分液漏斗内で静置した。二層分離後の下層を取り出して、エバポレーターにて精製することでシリコーンオリゴマーを得た。
得られたシリコーンオリゴマー30重量部に、tert−ブチル−2−エチルペルオキシヘキサノアート(重合開始剤、日油社製「パーブチルO」)0.5重量部を溶解させた溶解液Aを用意した。また、イオン交換水150重量部に、ポリオキシエチレンアルキルフェニルエーテル(乳化剤)0.8重量部とポリビニルアルコール(重合度:約2000、けん化度:86.5〜89モル%、日本合成化学社製「ゴーセノールGH−20」)の5重量%水溶液80重量部とを混合して、水溶液Bを用意した。
平均粒子径50nmである銀粒子を20重量部と、平均粒子径5μmである銀粒子を20重量部(表の重合%となる量)と、上記粒子Xを1重量部(表の重合%となる量)と、溶媒であるトルエン40重量部とを配合し、混合して、接続材料を得た。
第1の接続対象部材として、パワー半導体素子を用意した。第2の接続対象部材として、窒化アルミニウム基板を用意した。
シリコーンオリゴマーの作製に用いたシリコーンモノマーを表1,2に示すように変更したこと、SPG孔径を下記の表1,2に示すように変更したこと、並びに粒子及び接続材料の構成を表1,2に示すように変更したこと以外は実施例1と同様にして、粒子X、接続材料及び接続構造体を作製した。
シリコーン粒子作製時にポリオキシエチレンアルキルフェニルエーテルの添加量を0.5重量部に変更し、ポリビニルアルコールの5重量%水溶液の添加量を60重量部に変更したこと以外は実施例2と同様にして、粒子X、接続材料及び接続構造体を作製した。
シリコーン粒子作製時にポリオキシエチレンアルキルフェニルエーテルの添加量を0.5重量部に変更し、ポリビニルアルコールの5重量%水溶液の添加量を45重量部に変更したこと以外は実施例2と同様にして、粒子X、接続材料及び接続構造体を作製した。
実施例1の分散液Cを用意した。
イソプレン粒子の作製:
モノマーとしてイソプレン90重量部、DVB570を10重量部、及び重合開始剤として過酸化ベンゾイル(日油社製「ナイパーBW」)1重量部を溶解させた溶解液Aを用意した。
粒子の組成(溶解液Aの組成)を表1,2に示すように変更したこと以外は実施例1と同様にして、粒子X、接続材料及び接続構造体を作製した。
フルオレン粒子の作製:
フルオレンモノマー(大阪ガスケミカル社製「オグソールEA−0300」)100重量部と、重合開始剤であるtert−ブチルペルオキシ−2−エチルヘキサノアート(日油社製「パーブチルO」)1重量部とを溶解させた溶解液Aを用意した。実施例10の溶解液Aを、得られた溶解液Aに変更したこと、SPG孔径を下記の表2に示すように変更したこと以外は実施例10と同様にして、粒子X、接続材料及び接続構造体を作製した。
ROMP(開環メタセシス重合)粒子の作製:
ルウテニウムビニリデン錯体化合物(式(2)で表される化合物)の合成
ジクロロシメンルテニウム(東京化成工業社製「Ru(p−cymene)Cl2」)5.57g(9.1mmol)と、トリシクロヘキシルホスフィン(東京化成工業社製「PCy3」)18.2mmolと、t−ブチルアセチレン9.1mmolと、トルエン150mlとを、300mlのフラスコ中に入れ、窒素気流下、80℃で7時間反応させた。反応終了後、トルエンを減圧により除去し、テトラヒドロフラン/エタノールにて再結晶を行うことにより、下記式(2)で表される化合物を得た。
式(2)で表される化合物304mg(ジシクロペンタジエン(東京化成工業社製「DCPD」)の1/10000モル当量)をトルエン30mLに溶解させた溶液を用意した。この溶液と、アリルアセテート25gを加えた触媒溶液と、凝固点降下のためのトルエン10mLとを、ジシクロペンタジエン(東京化成工業社製「DCPD」)500gに加えて混合し、得られた混合液を、蒸留水1.5kgが入った5Lのセパラブルフラスコに入れた。
実施例1の粒子Xを用意した。
実施例1の粒子Xを用意した。
シリコーン粒子作製時にポリオキシエチレンアルキルフェニルエーテルの添加量を0.3重量部に変更し、ポリビニルアルコールの5重量%水溶液の添加量を30重量部に変更したこと以外は実施例2と同様にして、粒子X、接続材料及び接続構造体を作製した。
(1)10%K値
フィッシャー社製「フィッシャースコープH−100」を用いて、粒子の10%K値を測定した。導電性粒子に関しては、導電部を有する粒子の10%K値を測定した。
粒子を走査型電子顕微鏡で観察し、観察された画像における任意に選択した50個の各粒子の最大径を算術平均することにより、粒子の平均粒子径を求めた。導電性粒子に関しては、導電部を有する粒子の平均粒子径を測定した。
導電部を有する粒子に関しては、任意の50個の粒子の断面を観察することにより、粒子の導電部の厚みを求めた。
粒子を走査型電子顕微鏡で観察し、観察された画像における任意に選択した50個の各粒子の粒子径の標準偏差を求め、上述した式により粒子の粒子径のCV値を求めた。導電性粒子に関しては、導電部を有する粒子の粒子径のCV値を測定した。
日立ハイテック社製示差熱熱重量同時測定装置「TG−DTA6300」を用い、大気雰囲気下中にて、粒子10mgを30℃〜800℃(昇温速度5℃/min)で加熱した際、粒子の重量が5%低下した温度を熱分解温度とした。
光学顕微鏡(Nikon ECLIPSE社製「ME600」)を用いて、粒子の凝集状態を評価した。粒子の凝集状態を以下の基準で判定した。
A:粒子100万個あたり、凝集している粒子の数が100個以下
B:粒子100万個あたり、凝集している粒子の数が100個を超える
4mm×4mmのシリコンチップ及び接合面に金蒸着層を設けた裏面金チップを、半導体用樹脂ペーストを用いて、無垢の銅フレーム及びPPF(Ni−Pd/Auめっきした銅フレーム)にマウントし、200℃、60分で硬化した。硬化及び吸湿処理(85℃、相対湿度85%、72時間)後、マウント強度測定装置を用い、260℃での接続強度(シェア強度)を測定した。
○○:シェア強度が150N/cm2以上
○:シェア強度が100N/cm2以上、150N/cm2未満
×:シェア強度が100N/cm2未満
得られた接続構造体を−65℃から150℃に加熱し、−65℃に冷却する過程を1サイクルとする冷熱サイクル試験を1000サイクル実施した。超音波探傷装置(SAT)により、クラック及び剥離の発生の有無を観察した。クラック又は剥離の発生から冷熱サイクル特性を以下の基準で判定した。
○○:クラック及び剥離ありの数が5サンプル中0個
○:クラック及び剥離ありの数が5サンプル中1〜2個
×:クラック及び剥離ありの数が5サンプル中3〜5個
11…粒子(導電性粒子)
12…基材粒子
13…導電部
21…粒子(導電性粒子)
22…導電部
22A…第1の導電部
22B…第2の導電部
51…接続構造体
52…第1の接続対象部材
53…第2の接続対象部材
54…接続部
61…ギャップ制御粒子
62…金属接続部
Claims (13)
- 2つの接続対象部材を接続する接続部を形成するために用いられる接続材料であり、
前記接続材料は、粒子及び金属原子含有粒子を含み、
前記粒子は、接続後の前記接続部の厚みが、接続前の前記粒子の平均粒子径の2倍を超えるように、前記接続部を形成するために用いられるか、又は、前記粒子は、0.1μm以上、15μm以下の平均粒子径を有し、
前記粒子は、30N/mm2以上、3000N/mm2以下の10%K値を有し、
前記粒子は、50%以下の粒子径のCV値を有し、
前記粒子の熱分解温度が、前記金属原子含有粒子の融点よりも高い、接続材料。 - 2つの接続対象部材を接続する接続部を形成するために用いられる接続材料であり、
前記接続材料は、粒子及び金属原子含有粒子を含み、
前記粒子は、接続後の前記接続部の厚みが、接続前の前記粒子の平均粒子径の2倍を超えるように、前記接続部を形成するために用いられるか、又は、前記粒子は、0.1μm以上、15μm以下の平均粒子径を有し、
前記粒子は、30N/mm 2 以上、3000N/mm 2 以下の10%K値を有し、
前記粒子は、50%以下の粒子径のCV値を有し、
前記金属原子含有粒子を溶融させた後に固化させることで、前記接続部を形成するために用いられる、接続材料。 - 前記粒子は、接続後の前記接続部の厚みが、接続前の前記粒子の平均粒子径の2倍を超えるように、前記接続部を形成するために用いられる、請求項1又は2に記載の接続材料。
- 前記粒子は、0.1μm以上、15μm以下の平均粒子径を有する、請求項1〜3のいずれか1項に記載の接続材料。
- 前記粒子100万個あたり、凝集している粒子の数が100個以下である、請求項1〜4のいずれか1項に記載の接続材料。
- 前記粒子は、200℃以上の熱分解温度を有する、請求項1〜5のいずれか1項に記載の接続材料。
- 前記粒子の材料が、ビニル化合物、(メタ)アクリル化合物、α−オレフィン化合物、ジエン化合物、又はシリコーン化合物を含む、請求項1〜6のいずれか1項に記載の接続材料。
- 前記粒子が、外表面部分に導電部を有さない、請求項1〜7のいずれか1項に記載の接続材料。
- 前記粒子が、基材粒子と、前記基材粒子の表面上に配置された導電部とを有する、請求項1〜7のいずれか1項に記載の接続材料。
- 前記導電部の材料が、ニッケル、金、銀、銅、又は錫を含む、請求項9に記載の接続材料。
- 前記粒子は、1つの前記粒子が、2つの前記接続対象部材の双方に接しないように、前記接続部を形成するために用いられる、請求項1〜10のいずれか1項に記載の接続材料。
- 樹脂を含む、請求項1〜11のいずれか1項に記載の接続材料。
- 第1の接続対象部材と、
第2の接続対象部材と、
前記第1の接続対象部材と、前記第2の接続対象部材とを接続している接続部とを備え、
前記接続部の材料が、請求項1〜12のいずれか1項に記載の接続材料である、接続構造体。
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