JP6952711B2 - ターゲットデザイン方法、製造方法及び計量ターゲット - Google Patents

ターゲットデザイン方法、製造方法及び計量ターゲット Download PDF

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JP6952711B2
JP6952711B2 JP2018552155A JP2018552155A JP6952711B2 JP 6952711 B2 JP6952711 B2 JP 6952711B2 JP 2018552155 A JP2018552155 A JP 2018552155A JP 2018552155 A JP2018552155 A JP 2018552155A JP 6952711 B2 JP6952711 B2 JP 6952711B2
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target
pitch
design
hybrid
metering
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JP2019517017A5 (enExample
JP2019517017A (ja
Inventor
ウラディミル レビンスキ
ウラディミル レビンスキ
エイタン ハジャジ
エイタン ハジャジ
タル イツコビッチ
タル イツコビッチ
シャロン アハロン
シャロン アハロン
ミカエル イー アデル
ミカエル イー アデル
ユリ パスコバ
ユリ パスコバ
ダリア ネグリ
ダリア ネグリ
ユバル ルバシェブスキー
ユバル ルバシェブスキー
アムノン マナッセン
アムノン マナッセン
ミュンジュン リー
ミュンジュン リー
マーク ディー スミス
マーク ディー スミス
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KLA Corp
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KLA Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H10P74/203—
    • H10P76/00—
    • H10P76/2041—

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Geometry (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2018552155A 2016-04-04 2016-11-04 ターゲットデザイン方法、製造方法及び計量ターゲット Active JP6952711B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662318086P 2016-04-04 2016-04-04
US62/318,086 2016-04-04
PCT/US2016/060626 WO2017176314A1 (en) 2016-04-04 2016-11-04 Process compatibility improvement by fill factor modulation

Publications (3)

Publication Number Publication Date
JP2019517017A JP2019517017A (ja) 2019-06-20
JP2019517017A5 JP2019517017A5 (enExample) 2019-12-12
JP6952711B2 true JP6952711B2 (ja) 2021-10-20

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Country Status (8)

Country Link
US (1) US10579768B2 (enExample)
EP (1) EP3440511B1 (enExample)
JP (1) JP6952711B2 (enExample)
KR (1) KR102788661B1 (enExample)
CN (1) CN109073981B (enExample)
IL (1) IL261879B (enExample)
TW (1) TWI710860B (enExample)
WO (1) WO2017176314A1 (enExample)

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SG11201906424WA (en) * 2017-02-10 2019-08-27 Kla Tencor Corp Mitigation of inaccuracies related to grating asymmetries in scatterometry measurements
WO2018226215A1 (en) 2017-06-06 2018-12-13 Kla-Tencor Corporation Reticle optimization algorithms and optimal target design
US10628544B2 (en) 2017-09-25 2020-04-21 International Business Machines Corporation Optimizing integrated circuit designs based on interactions between multiple integration design rules
US20190250504A1 (en) * 2017-10-23 2019-08-15 Kla-Tencor Corporation Reduction or elimination of pattern placement error in metrology measurements
SG11202103847QA (en) * 2018-10-30 2021-05-28 Kla Tencor Corp Estimation of asymmetric aberrations
WO2020169419A1 (en) * 2019-02-19 2020-08-27 Asml Holding N.V. Metrology system, lithographic apparatus, and method
US11378394B1 (en) * 2020-12-11 2022-07-05 Kla Corporation On-the-fly scatterometry overlay metrology target
CN117546100B (zh) * 2021-12-17 2025-05-02 科磊股份有限公司 用于改进目标置放准确度的叠加目标设计
US12411420B2 (en) * 2023-09-29 2025-09-09 Kla Corporation Small in-die target design for overlay measurement

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TW512424B (en) * 2000-05-01 2002-12-01 Asml Masktools Bv Hybrid phase-shift mask
TW479157B (en) 2000-07-21 2002-03-11 Asm Lithography Bv Mask for use in a lithographic projection apparatus and method of making the same
US6433878B1 (en) * 2001-01-29 2002-08-13 Timbre Technology, Inc. Method and apparatus for the determination of mask rules using scatterometry
US6519760B2 (en) * 2001-02-28 2003-02-11 Asml Masktools, B.V. Method and apparatus for minimizing optical proximity effects
SG108975A1 (en) * 2003-07-11 2005-02-28 Asml Netherlands Bv Marker structure for alignment or overlay to correct pattern induced displacement, mask pattern for defining such a marker structure and lithographic projection apparatus using such a mask pattern
SG111289A1 (en) * 2003-11-05 2005-05-30 Asml Masktools Bv A method for performing transmission tuning of a mask pattern to improve process latitude
EP1709490B1 (en) * 2003-12-19 2010-08-04 International Business Machines Corporation Differential critical dimension and overlay metrology
JP4634849B2 (ja) * 2005-04-12 2011-02-16 株式会社東芝 集積回路のパターンレイアウト、フォトマスク、半導体装置の製造方法、及びデータ作成方法
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Also Published As

Publication number Publication date
CN109073981A (zh) 2018-12-21
US20180157784A1 (en) 2018-06-07
EP3440511A1 (en) 2019-02-13
IL261879A (en) 2018-10-31
KR102788661B1 (ko) 2025-03-28
TWI710860B (zh) 2020-11-21
IL261879B (en) 2021-01-31
EP3440511B1 (en) 2024-03-06
WO2017176314A1 (en) 2017-10-12
EP3440511A4 (en) 2019-12-18
TW201800873A (zh) 2018-01-01
JP2019517017A (ja) 2019-06-20
KR20180123156A (ko) 2018-11-14
US10579768B2 (en) 2020-03-03
CN109073981B (zh) 2021-09-24

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