JP2019517017A5 - - Google Patents

Download PDF

Info

Publication number
JP2019517017A5
JP2019517017A5 JP2018552155A JP2018552155A JP2019517017A5 JP 2019517017 A5 JP2019517017 A5 JP 2019517017A5 JP 2018552155 A JP2018552155 A JP 2018552155A JP 2018552155 A JP2018552155 A JP 2018552155A JP 2019517017 A5 JP2019517017 A5 JP 2019517017A5
Authority
JP
Japan
Prior art keywords
target
design
pitch
hybrid
hybrid periodic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2018552155A
Other languages
English (en)
Japanese (ja)
Other versions
JP6952711B2 (ja
JP2019517017A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2016/060626 external-priority patent/WO2017176314A1/en
Publication of JP2019517017A publication Critical patent/JP2019517017A/ja
Publication of JP2019517017A5 publication Critical patent/JP2019517017A5/ja
Application granted granted Critical
Publication of JP6952711B2 publication Critical patent/JP6952711B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2018552155A 2016-04-04 2016-11-04 ターゲットデザイン方法、製造方法及び計量ターゲット Active JP6952711B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662318086P 2016-04-04 2016-04-04
US62/318,086 2016-04-04
PCT/US2016/060626 WO2017176314A1 (en) 2016-04-04 2016-11-04 Process compatibility improvement by fill factor modulation

Publications (3)

Publication Number Publication Date
JP2019517017A JP2019517017A (ja) 2019-06-20
JP2019517017A5 true JP2019517017A5 (enExample) 2019-12-12
JP6952711B2 JP6952711B2 (ja) 2021-10-20

Family

ID=60001339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018552155A Active JP6952711B2 (ja) 2016-04-04 2016-11-04 ターゲットデザイン方法、製造方法及び計量ターゲット

Country Status (8)

Country Link
US (1) US10579768B2 (enExample)
EP (1) EP3440511B1 (enExample)
JP (1) JP6952711B2 (enExample)
KR (1) KR102788661B1 (enExample)
CN (1) CN109073981B (enExample)
IL (1) IL261879B (enExample)
TW (1) TWI710860B (enExample)
WO (1) WO2017176314A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110312966B (zh) * 2017-02-10 2022-03-25 科磊股份有限公司 与散射测量术测量中的光栅非对称相关的不精确性的减轻
US10754261B2 (en) 2017-06-06 2020-08-25 Kla-Tencor Corporation Reticle optimization algorithms and optimal target design
US10628544B2 (en) 2017-09-25 2020-04-21 International Business Machines Corporation Optimizing integrated circuit designs based on interactions between multiple integration design rules
WO2019083560A1 (en) * 2017-10-23 2019-05-02 Kla-Tencor Corporation REDUCTION OR ELIMINATION OF PATTERN PLACEMENT ERROR IN METROLOGY MEASUREMENTS
KR102381168B1 (ko) * 2018-10-30 2022-03-30 케이엘에이 코포레이션 비대칭 수차의 추정
NL2024878A (en) * 2019-02-19 2020-08-27 Asml Holding Nv Metrology system, lithographic apparatus, and method
US11378394B1 (en) * 2020-12-11 2022-07-05 Kla Corporation On-the-fly scatterometry overlay metrology target
KR102871169B1 (ko) * 2021-12-17 2025-10-14 케이엘에이 코포레이션 개선된 타겟 배치 정확성을 위한 오버레이 타겟 설계
US12628621B2 (en) * 2023-02-06 2026-05-12 Nanya Technology Corporation Semiconductor structure and method of overlay measurement of semiconductor structure
US12411420B2 (en) * 2023-09-29 2025-09-09 Kla Corporation Small in-die target design for overlay measurement

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6303252B1 (en) * 1999-12-27 2001-10-16 United Microelectronics Corp. Reticle having assist feature between semi-dense lines
TW512424B (en) * 2000-05-01 2002-12-01 Asml Masktools Bv Hybrid phase-shift mask
TW479157B (en) 2000-07-21 2002-03-11 Asm Lithography Bv Mask for use in a lithographic projection apparatus and method of making the same
US6433878B1 (en) * 2001-01-29 2002-08-13 Timbre Technology, Inc. Method and apparatus for the determination of mask rules using scatterometry
US6519760B2 (en) * 2001-02-28 2003-02-11 Asml Masktools, B.V. Method and apparatus for minimizing optical proximity effects
SG108975A1 (en) * 2003-07-11 2005-02-28 Asml Netherlands Bv Marker structure for alignment or overlay to correct pattern induced displacement, mask pattern for defining such a marker structure and lithographic projection apparatus using such a mask pattern
SG111289A1 (en) * 2003-11-05 2005-05-30 Asml Masktools Bv A method for performing transmission tuning of a mask pattern to improve process latitude
EP1709490B1 (en) * 2003-12-19 2010-08-04 International Business Machines Corporation Differential critical dimension and overlay metrology
JP4634849B2 (ja) 2005-04-12 2011-02-16 株式会社東芝 集積回路のパターンレイアウト、フォトマスク、半導体装置の製造方法、及びデータ作成方法
US7749662B2 (en) * 2005-10-07 2010-07-06 Globalfoundries Inc. Process margin using discrete assist features
US7925486B2 (en) 2006-03-14 2011-04-12 Kla-Tencor Technologies Corp. Computer-implemented methods, carrier media, and systems for creating a metrology target structure design for a reticle layout
US7911612B2 (en) * 2007-06-13 2011-03-22 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
KR100880232B1 (ko) * 2007-08-20 2009-01-28 주식회사 동부하이텍 미세 마스크 및 그를 이용한 패턴 형성 방법
JP2009109581A (ja) * 2007-10-26 2009-05-21 Toshiba Corp 半導体装置の製造方法
JP5529391B2 (ja) * 2008-03-21 2014-06-25 ルネサスエレクトロニクス株式会社 ハーフトーン型位相シフトマスク、そのハーフトーン型位相シフトマスクを有する半導体装置の製造装置、およびそのハーフトーン型位相シフトマスクを用いた半導体装置の製造方法
JP5627394B2 (ja) * 2010-10-29 2014-11-19 キヤノン株式会社 マスクのデータ及び露光条件を決定するためのプログラム、決定方法、マスク製造方法、露光方法及びデバイス製造方法
US8913237B2 (en) * 2012-06-26 2014-12-16 Kla-Tencor Corporation Device-like scatterometry overlay targets
WO2015009619A1 (en) 2013-07-15 2015-01-22 Kla-Tencor Corporation Producing resist layers using fine segmentation
US9053284B2 (en) 2013-09-04 2015-06-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for overlay control
NL2013838A (en) * 2013-12-17 2015-06-18 Asml Netherlands Bv Inspection method, lithographic apparatus, mask and substrate.
WO2015109036A1 (en) 2014-01-15 2015-07-23 Kla-Tencor Corporation Overlay measurement of pitch walk in multiply patterned targets
WO2016030255A2 (en) * 2014-08-29 2016-03-03 Asml Netherlands B.V. Metrology method, target and substrate
NL2017300A (en) * 2015-08-27 2017-03-01 Asml Netherlands Bv Method and apparatus for measuring a parameter of a lithographic process, substrate and patterning devices for use in the method
US10670975B2 (en) * 2015-12-17 2020-06-02 Asml Netherlands B.V. Adjustment of a metrology apparatus or a measurement thereby based on a characteristic of a target measured

Similar Documents

Publication Publication Date Title
JP2018200695A5 (ja) ドットパターン
JP2017210657A5 (enExample)
WO2016030255A3 (en) Metrology method, target and substrate
JP2014140058A5 (enExample)
JP2017114118A5 (enExample)
JP2017530031A5 (enExample)
JP2019502959A5 (enExample)
JP2016035967A5 (enExample)
JP2016009118A5 (enExample)
Radwan et al. A nonlocal strain gradient model for dynamic deformation of orthotropic viscoelastic graphene sheets under time harmonic thermal load
MX385939B (es) Métodos de fabricación de un dispositivo de seguridad.
Segers et al. Nonparametric estimation of the tree structure of a nested Archimedean copula
JP2013175006A5 (enExample)
JP2017001216A5 (enExample)
JP2015034973A5 (enExample)
JP2016195242A5 (ja) インプリント装置、インプリント方法、物品の製造方法、決定方法、およびプログラム
JP2018059211A5 (enExample)
JP2015125162A5 (ja) マスクパターン作成方法、プログラム、マスク製造方法、露光方法及び物品製造方法
JP2018032938A5 (enExample)
JP2014135417A5 (enExample)
JP2012008883A5 (ja) 編集装置、編集方法およびプログラム
JP2017508145A5 (enExample)
RU2016140888A (ru) Усовершенствованный компьютерно-реализуемый способ задания точек построения опорных элементов объекта, изготавлеваемого в ходе стереолитографического процесса
JP2014164054A5 (enExample)
Sun et al. G1 continuity between toric surface patches