TWI710860B - 複合週期性目標結構 - Google Patents

複合週期性目標結構 Download PDF

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Publication number
TWI710860B
TWI710860B TW106110992A TW106110992A TWI710860B TW I710860 B TWI710860 B TW I710860B TW 106110992 A TW106110992 A TW 106110992A TW 106110992 A TW106110992 A TW 106110992A TW I710860 B TWI710860 B TW I710860B
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TW
Taiwan
Prior art keywords
target
pitch
elements
design
auxiliary
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TW106110992A
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English (en)
Chinese (zh)
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TW201800873A (zh
Inventor
維拉得摩 朗維司基
依坦 哈賈
托爾 伊茲卡維奇
夏倫 雅哈崙
麥克 E 艾黛兒
尤瑞 帕斯卡維爾
戴瑞亞 尼葛瑞
尤法 路巴希福斯基
阿農 馬那森
李明俊
馬克 D 史密斯
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美商克萊譚克公司
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Publication of TW201800873A publication Critical patent/TW201800873A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H10P74/203—
    • H10P76/00—
    • H10P76/2041—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Geometry (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW106110992A 2016-04-04 2017-03-31 複合週期性目標結構 TWI710860B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662318086P 2016-04-04 2016-04-04
US62/318,086 2016-04-04
WOPCT/US16/60626 2016-11-04
??PCT/US16/60626 2016-11-04
PCT/US2016/060626 WO2017176314A1 (en) 2016-04-04 2016-11-04 Process compatibility improvement by fill factor modulation

Publications (2)

Publication Number Publication Date
TW201800873A TW201800873A (zh) 2018-01-01
TWI710860B true TWI710860B (zh) 2020-11-21

Family

ID=60001339

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106110992A TWI710860B (zh) 2016-04-04 2017-03-31 複合週期性目標結構

Country Status (8)

Country Link
US (1) US10579768B2 (enExample)
EP (1) EP3440511B1 (enExample)
JP (1) JP6952711B2 (enExample)
KR (1) KR102788661B1 (enExample)
CN (1) CN109073981B (enExample)
IL (1) IL261879B (enExample)
TW (1) TWI710860B (enExample)
WO (1) WO2017176314A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201906424WA (en) * 2017-02-10 2019-08-27 Kla Tencor Corp Mitigation of inaccuracies related to grating asymmetries in scatterometry measurements
WO2018226215A1 (en) 2017-06-06 2018-12-13 Kla-Tencor Corporation Reticle optimization algorithms and optimal target design
US10628544B2 (en) 2017-09-25 2020-04-21 International Business Machines Corporation Optimizing integrated circuit designs based on interactions between multiple integration design rules
US20190250504A1 (en) * 2017-10-23 2019-08-15 Kla-Tencor Corporation Reduction or elimination of pattern placement error in metrology measurements
SG11202103847QA (en) * 2018-10-30 2021-05-28 Kla Tencor Corp Estimation of asymmetric aberrations
WO2020169419A1 (en) * 2019-02-19 2020-08-27 Asml Holding N.V. Metrology system, lithographic apparatus, and method
US11378394B1 (en) * 2020-12-11 2022-07-05 Kla Corporation On-the-fly scatterometry overlay metrology target
CN117546100B (zh) * 2021-12-17 2025-05-02 科磊股份有限公司 用于改进目标置放准确度的叠加目标设计
US12411420B2 (en) * 2023-09-29 2025-09-09 Kla Corporation Small in-die target design for overlay measurement

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020131055A1 (en) * 2001-01-29 2002-09-19 Xinhui Niu Method and apparatus for the determination of mask rules using scatterometry
US20070082277A1 (en) * 2005-10-07 2007-04-12 Advanced Micro Devices, Inc. Process margin using discrete assist features
TW201527901A (zh) * 2013-12-17 2015-07-16 Asml Netherlands Bv 檢查方法、微影裝置、光罩及基板
US20160061589A1 (en) * 2014-08-29 2016-03-03 Asml Netherlands B.V. Metrology method, target and substrate

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6303252B1 (en) 1999-12-27 2001-10-16 United Microelectronics Corp. Reticle having assist feature between semi-dense lines
TW512424B (en) * 2000-05-01 2002-12-01 Asml Masktools Bv Hybrid phase-shift mask
TW479157B (en) 2000-07-21 2002-03-11 Asm Lithography Bv Mask for use in a lithographic projection apparatus and method of making the same
US6519760B2 (en) * 2001-02-28 2003-02-11 Asml Masktools, B.V. Method and apparatus for minimizing optical proximity effects
SG108975A1 (en) * 2003-07-11 2005-02-28 Asml Netherlands Bv Marker structure for alignment or overlay to correct pattern induced displacement, mask pattern for defining such a marker structure and lithographic projection apparatus using such a mask pattern
SG111289A1 (en) * 2003-11-05 2005-05-30 Asml Masktools Bv A method for performing transmission tuning of a mask pattern to improve process latitude
EP1709490B1 (en) * 2003-12-19 2010-08-04 International Business Machines Corporation Differential critical dimension and overlay metrology
JP4634849B2 (ja) * 2005-04-12 2011-02-16 株式会社東芝 集積回路のパターンレイアウト、フォトマスク、半導体装置の製造方法、及びデータ作成方法
US7925486B2 (en) 2006-03-14 2011-04-12 Kla-Tencor Technologies Corp. Computer-implemented methods, carrier media, and systems for creating a metrology target structure design for a reticle layout
US7911612B2 (en) 2007-06-13 2011-03-22 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
KR100880232B1 (ko) * 2007-08-20 2009-01-28 주식회사 동부하이텍 미세 마스크 및 그를 이용한 패턴 형성 방법
JP2009109581A (ja) * 2007-10-26 2009-05-21 Toshiba Corp 半導体装置の製造方法
JP5529391B2 (ja) * 2008-03-21 2014-06-25 ルネサスエレクトロニクス株式会社 ハーフトーン型位相シフトマスク、そのハーフトーン型位相シフトマスクを有する半導体装置の製造装置、およびそのハーフトーン型位相シフトマスクを用いた半導体装置の製造方法
JP5627394B2 (ja) * 2010-10-29 2014-11-19 キヤノン株式会社 マスクのデータ及び露光条件を決定するためのプログラム、決定方法、マスク製造方法、露光方法及びデバイス製造方法
US8913237B2 (en) * 2012-06-26 2014-12-16 Kla-Tencor Corporation Device-like scatterometry overlay targets
WO2015009619A1 (en) * 2013-07-15 2015-01-22 Kla-Tencor Corporation Producing resist layers using fine segmentation
US9053284B2 (en) 2013-09-04 2015-06-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for overlay control
KR102169557B1 (ko) * 2014-01-15 2020-10-26 케이엘에이 코포레이션 다중 패터닝된 타겟에서의 피치 워크의 오버레이 측정
NL2017300A (en) * 2015-08-27 2017-03-01 Asml Netherlands Bv Method and apparatus for measuring a parameter of a lithographic process, substrate and patterning devices for use in the method
KR102477933B1 (ko) * 2015-12-17 2022-12-15 에이에스엠엘 네델란즈 비.브이. 메트롤로지 장치의 조정 또는 측정 타겟의 특성에 기초한 측정

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020131055A1 (en) * 2001-01-29 2002-09-19 Xinhui Niu Method and apparatus for the determination of mask rules using scatterometry
US20070082277A1 (en) * 2005-10-07 2007-04-12 Advanced Micro Devices, Inc. Process margin using discrete assist features
TW201527901A (zh) * 2013-12-17 2015-07-16 Asml Netherlands Bv 檢查方法、微影裝置、光罩及基板
US20160061589A1 (en) * 2014-08-29 2016-03-03 Asml Netherlands B.V. Metrology method, target and substrate

Also Published As

Publication number Publication date
CN109073981A (zh) 2018-12-21
US20180157784A1 (en) 2018-06-07
EP3440511A1 (en) 2019-02-13
IL261879A (en) 2018-10-31
KR102788661B1 (ko) 2025-03-28
JP6952711B2 (ja) 2021-10-20
IL261879B (en) 2021-01-31
EP3440511B1 (en) 2024-03-06
WO2017176314A1 (en) 2017-10-12
EP3440511A4 (en) 2019-12-18
TW201800873A (zh) 2018-01-01
JP2019517017A (ja) 2019-06-20
KR20180123156A (ko) 2018-11-14
US10579768B2 (en) 2020-03-03
CN109073981B (zh) 2021-09-24

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