JP6939771B2 - 光モジュール - Google Patents
光モジュール Download PDFInfo
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- JP6939771B2 JP6939771B2 JP2018505500A JP2018505500A JP6939771B2 JP 6939771 B2 JP6939771 B2 JP 6939771B2 JP 2018505500 A JP2018505500 A JP 2018505500A JP 2018505500 A JP2018505500 A JP 2018505500A JP 6939771 B2 JP6939771 B2 JP 6939771B2
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- 230000003287 optical effect Effects 0.000 title claims description 89
- 239000004065 semiconductor Substances 0.000 claims description 75
- 150000001875 compounds Chemical class 0.000 claims description 7
- 230000001681 protective effect Effects 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 229910021478 group 5 element Inorganic materials 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 230000010287 polarization Effects 0.000 description 24
- 230000008033 biological extinction Effects 0.000 description 22
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 241000269800 Percidae Species 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
- H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02253—Out-coupling of light using lenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
- H01S5/4093—Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Description
最初に本開示の実施態様を列記して説明する。本開示に係る光モジュールの第1の態様は、半導体レーザと、半導体レーザの出射方向に配置され、半導体レーザから出射された光のうち特定方向の直線偏光成分の光のみを透過させるように構成された直線偏光子と、を備える。
次に、本開示に係る光モジュールの一実施の形態を、図1〜図7を参照しつつ説明する。図2は、図1のキャップ40を取り外した状態に対応する図である。以下の図面において同一または相当する部分には同一の参照番号を付しその説明は繰返さない場合がある。
このように、第1フィルタ97および第2フィルタ98は、特定の波長の光を選択的に透過および反射する。その結果、第1フィルタ97および第2フィルタ98は、赤色レーザダイオード81、緑色レーザダイオード82および青色レーザダイオード83から出射された光を合波する。第1フィルタ97および第2フィルタ98は、それぞれベース領域61上に形成された凸部である第1突出領域88および第2突出領域89上に配置される。
10 基部
10A 一方の主面
10B 他方の主面
20 光形成部
30 電子冷却モジュール(TEC)
31 吸熱板
32 放熱板
33 半導体柱
36 第1偏光子
37 第2偏光子
38 第3偏光子
40 キャップ
41 出射窓
51 リードピン
60 ベース板
60A 一方の主面
60B 他方の主面
61 ベース領域
62 チップ搭載領域
63 第1チップ搭載領域
64 第2チップ搭載領域
65 第3チップ搭載領域
66 サーミスタ
71 第1サブマウント
72 第2サブマウント
73 第3サブマウント
74 第4サブマウント
75 第5サブマウント
76 第6サブマウント
77 第1レンズ保持部
78 第2レンズ保持部
79 第3レンズ保持部
81 赤色レーザダイオード
82 緑色レーザダイオード
83 青色レーザダイオード
88 第1突出領域
89 第2突出領域
91 第1レンズ
92 第2レンズ
93 第3レンズ
91A,92A,93A レンズ部
94 第1フォトダイオード
95 第2フォトダイオード
96 第3フォトダイオード
94A,95A,96A 受光部
97 第1フィルタ
98 第2フィルタ
Claims (6)
- 半導体レーザと、
前記半導体レーザの出射方向に配置され、前記半導体レーザから出射された光のうち特定方向の直線偏光成分の光のみを透過させるように構成された直線偏光子と、
前記半導体レーザの出射方向であって、前記直線偏光子から見て前記半導体レーザと反対側に配置され、前記直線偏光子を透過した前記直線偏光成分の光の一部を受光するように構成された受光素子と、を備えた光モジュール。 - 前記半導体レーザ、前記直線偏光子および前記受光素子を取り囲む保護部材をさらに備えた請求項1に記載の光モジュール。
- 前記半導体レーザの出射方向であって、前記受光素子から見て前記半導体レーザと反対側に配置されるレンズをさらに含む、請求項2に記載の光モジュール。
- 前記半導体レーザの出射方向であって、前記受光素子から見て前記半導体レーザと反対側に配置されるレンズをさらに含み、前記レンズは前記保護部材に取り囲まれている請求項2に記載の光モジュール。
- 前記半導体レーザは、赤色の光または赤外光を出射するように構成された、請求項1から請求項4のいずれか1項に記載の光モジュール。
- 前記半導体レーザは、III−V族化合物半導体を材料とするレーザであって、V族元素がヒ素またはリンの少なくともいずれか一つを含む、請求項1から請求項5のいずれか1項に記載の光モジュール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016244662 | 2016-12-16 | ||
JP2016244662 | 2016-12-16 | ||
PCT/JP2017/040579 WO2018110172A1 (ja) | 2016-12-16 | 2017-11-10 | 光モジュール |
Publications (2)
Publication Number | Publication Date |
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JPWO2018110172A1 JPWO2018110172A1 (ja) | 2019-10-24 |
JP6939771B2 true JP6939771B2 (ja) | 2021-09-22 |
Family
ID=62558690
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2018505500A Active JP6939771B2 (ja) | 2016-12-16 | 2017-11-10 | 光モジュール |
Country Status (4)
Country | Link |
---|---|
US (1) | US10601200B2 (ja) |
JP (1) | JP6939771B2 (ja) |
DE (1) | DE112017006331T5 (ja) |
WO (1) | WO2018110172A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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KR102527477B1 (ko) | 2017-04-24 | 2023-05-02 | 아이엠이씨 브이제트더블유 | 고체 나노복합재 전해질 재료 |
ES2968891T3 (es) | 2017-11-02 | 2024-05-14 | Imec Vzw | Electrolito sólido, electrodo, elemento de almacenamiento de electricidad y procedimiento para la producción de electrolitos sólidos |
US11557789B2 (en) | 2017-11-02 | 2023-01-17 | Imec Vzw | Solid electrolyte, electrode, power storage device, and method for producing solid electrolytes |
US20210257814A1 (en) * | 2018-06-29 | 2021-08-19 | Sumitomo Electric Industries, Ltd. | Optical module |
JP7073964B2 (ja) * | 2018-07-25 | 2022-05-24 | 住友電気工業株式会社 | 光モジュールおよび光モジュールの製造方法 |
CN115343811A (zh) * | 2022-04-21 | 2022-11-15 | 讯芸电子科技(中山)有限公司 | 蝶型封装光收发器 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998019375A1 (fr) * | 1996-10-30 | 1998-05-07 | Hitachi, Ltd. | Machine de traitement optique de l'information et dispositif a semi-conducteur emetteur de lumiere afferent |
US6275317B1 (en) * | 1998-03-10 | 2001-08-14 | Agere Systems Optoelectronics Guardian Corp. | Hybrid integration of a wavelength selectable laser source and optical amplifier/modulator |
JP2001228372A (ja) | 2000-02-15 | 2001-08-24 | Nec Corp | 半導体レーザモジュール |
JP2002040350A (ja) * | 2000-07-28 | 2002-02-06 | Fuji Xerox Co Ltd | 光走査装置 |
JP2007017925A (ja) | 2005-06-07 | 2007-01-25 | Fujifilm Holdings Corp | 合波レーザ光源 |
JP2007328895A (ja) | 2005-06-16 | 2007-12-20 | Sanyo Electric Co Ltd | 光ピックアップ装置 |
US7616550B2 (en) * | 2005-06-16 | 2009-11-10 | Sanyo Electric Co., Ltd. | Optical pickup unit |
JP2007065600A (ja) | 2005-09-02 | 2007-03-15 | Fujifilm Corp | 合波レーザ装置 |
JP2008060272A (ja) | 2006-08-30 | 2008-03-13 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置の製造方法、および半導体レーザ装置 |
JP4885688B2 (ja) | 2006-11-16 | 2012-02-29 | ルネサスエレクトロニクス株式会社 | 半導体レーザ装置 |
JP2009093101A (ja) | 2007-10-12 | 2009-04-30 | Hitachi Communication Technologies Ltd | 光モジュール |
JP5619826B2 (ja) * | 2012-07-12 | 2014-11-05 | 古河電気工業株式会社 | 接着剤組成物およびレーザモジュール |
JP6413675B2 (ja) * | 2014-11-13 | 2018-10-31 | 住友電気工業株式会社 | 光モジュール |
-
2017
- 2017-11-10 US US15/998,661 patent/US10601200B2/en active Active
- 2017-11-10 DE DE112017006331.0T patent/DE112017006331T5/de not_active Withdrawn
- 2017-11-10 JP JP2018505500A patent/JP6939771B2/ja active Active
- 2017-11-10 WO PCT/JP2017/040579 patent/WO2018110172A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
JPWO2018110172A1 (ja) | 2019-10-24 |
US20190237932A1 (en) | 2019-08-01 |
WO2018110172A1 (ja) | 2018-06-21 |
US10601200B2 (en) | 2020-03-24 |
DE112017006331T5 (de) | 2019-09-19 |
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