JP6932552B2 - マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法 - Google Patents

マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法 Download PDF

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Publication number
JP6932552B2
JP6932552B2 JP2017107767A JP2017107767A JP6932552B2 JP 6932552 B2 JP6932552 B2 JP 6932552B2 JP 2017107767 A JP2017107767 A JP 2017107767A JP 2017107767 A JP2017107767 A JP 2017107767A JP 6932552 B2 JP6932552 B2 JP 6932552B2
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Japan
Prior art keywords
light
shielding film
mask
film
translucent substrate
Prior art date
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JP2017107767A
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English (en)
Japanese (ja)
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JP2018205400A (ja
JP2018205400A5 (https=
Inventor
雅広 橋本
雅広 橋本
真理子 内田
真理子 内田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Electronics Singapore Pte Ltd
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Hoya Electronics Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority to JP2017107767A priority Critical patent/JP6932552B2/ja
Application filed by Hoya Electronics Singapore Pte Ltd filed Critical Hoya Electronics Singapore Pte Ltd
Priority to PCT/JP2018/018707 priority patent/WO2018221201A1/ja
Priority to CN201880031374.6A priority patent/CN110651225B/zh
Priority to US16/615,542 priority patent/US20200166833A1/en
Priority to KR1020197030979A priority patent/KR102565111B1/ko
Priority to TW107117658A priority patent/TWI768050B/zh
Publication of JP2018205400A publication Critical patent/JP2018205400A/ja
Publication of JP2018205400A5 publication Critical patent/JP2018205400A5/ja
Application granted granted Critical
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
JP2017107767A 2017-05-31 2017-05-31 マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法 Active JP6932552B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2017107767A JP6932552B2 (ja) 2017-05-31 2017-05-31 マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法
CN201880031374.6A CN110651225B (zh) 2017-05-31 2018-05-15 光罩基底、转印用光罩的制造方法以及半导体设备的制造方法
US16/615,542 US20200166833A1 (en) 2017-05-31 2018-05-15 Mask blank, method of manufacturing transfer mask, and method for manufacturing semiconductor device
KR1020197030979A KR102565111B1 (ko) 2017-05-31 2018-05-15 마스크 블랭크, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
PCT/JP2018/018707 WO2018221201A1 (ja) 2017-05-31 2018-05-15 マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法
TW107117658A TWI768050B (zh) 2017-05-31 2018-05-24 光罩基底、轉印用光罩之製造方法及半導體裝置之製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017107767A JP6932552B2 (ja) 2017-05-31 2017-05-31 マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2018205400A JP2018205400A (ja) 2018-12-27
JP2018205400A5 JP2018205400A5 (https=) 2020-06-11
JP6932552B2 true JP6932552B2 (ja) 2021-09-08

Family

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JP2017107767A Active JP6932552B2 (ja) 2017-05-31 2017-05-31 マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法

Country Status (6)

Country Link
US (1) US20200166833A1 (https=)
JP (1) JP6932552B2 (https=)
KR (1) KR102565111B1 (https=)
CN (1) CN110651225B (https=)
TW (1) TWI768050B (https=)
WO (1) WO2018221201A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7329033B2 (ja) 2020-12-31 2023-08-17 エスケー エンパルス カンパニー リミテッド ブランクマスク及びそれを用いたフォトマスク
JP7329031B2 (ja) * 2020-12-31 2023-08-17 エスケー エンパルス カンパニー リミテッド ブランクマスク及びそれを用いたフォトマスク
KR102465982B1 (ko) * 2021-07-13 2022-11-09 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
WO2023037731A1 (ja) * 2021-09-08 2023-03-16 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法
KR102503790B1 (ko) * 2021-10-07 2023-02-23 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3115185B2 (ja) * 1993-05-25 2000-12-04 株式会社東芝 露光用マスクとパターン形成方法
JP2878143B2 (ja) * 1994-02-22 1999-04-05 インターナショナル・ビジネス・マシーンズ・コーポレイション 減衰位相シフト・マスク作成用の薄膜材料及びその作成方法
JP3286103B2 (ja) 1995-02-15 2002-05-27 株式会社東芝 露光用マスクの製造方法及び製造装置
JP3247306B2 (ja) * 1995-11-17 2002-01-15 株式会社トプコン フォトマスクのパターンの微小欠陥検査方法及びその装置
JP2002214793A (ja) * 2001-01-22 2002-07-31 Mitsubishi Electric Corp 反射防止膜及び半導体装置の製造方法
US6753538B2 (en) 2001-07-27 2004-06-22 Fei Company Electron beam processing
JP2004109592A (ja) * 2002-09-19 2004-04-08 Renesas Technology Corp フォトマスクおよびその製造方法
JP4494173B2 (ja) * 2004-11-26 2010-06-30 パナソニック株式会社 固体撮像装置の製造方法
JP2009122566A (ja) * 2007-11-19 2009-06-04 Dainippon Printing Co Ltd 低反射型フォトマスクブランクスおよびフォトマスク
KR101153663B1 (ko) 2009-02-13 2012-07-20 호야 가부시키가이샤 포토마스크 블랭크 및 그 제조 방법과 포토마스크 및 그 제조 방법
JP5208011B2 (ja) 2009-02-13 2013-06-12 セイコーインスツル株式会社 メモリ回路装置
WO2010119811A1 (ja) * 2009-04-16 2010-10-21 Hoya株式会社 マスクブランク及び転写用マスク並びに膜緻密性評価方法
JP6005530B2 (ja) 2013-01-15 2016-10-12 Hoya株式会社 マスクブランク、位相シフトマスクおよびこれらの製造方法
JP6358265B2 (ja) * 2013-11-18 2018-07-18 株式会社ニコン 空間光変調素子モジュール、光描画装置、露光装置、空間光変調素子モジュール製造方法およびデバイス製造方法
TW201537281A (zh) * 2014-03-18 2015-10-01 Hoya Corp 光罩基底、相偏移光罩及半導體裝置之製造方法
JP6394496B2 (ja) * 2014-07-15 2018-09-26 信越化学工業株式会社 バイナリフォトマスクブランク、その製造方法、及びバイナリフォトマスクの製造方法
JP6080915B2 (ja) * 2014-08-25 2017-02-15 エスアンドエス テック カンパニー リミテッド 位相反転ブランクマスク及びフォトマスク
JP6743679B2 (ja) * 2016-03-02 2020-08-19 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
KR102254035B1 (ko) * 2016-08-26 2021-05-20 호야 가부시키가이샤 마스크 블랭크, 전사용 마스크 및 반도체 디바이스의 제조 방법

Also Published As

Publication number Publication date
TWI768050B (zh) 2022-06-21
JP2018205400A (ja) 2018-12-27
CN110651225B (zh) 2023-10-03
TW201903516A (zh) 2019-01-16
CN110651225A (zh) 2020-01-03
KR102565111B1 (ko) 2023-08-09
US20200166833A1 (en) 2020-05-28
KR20200014272A (ko) 2020-02-10
WO2018221201A1 (ja) 2018-12-06

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