JP6926012B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6926012B2
JP6926012B2 JP2018024047A JP2018024047A JP6926012B2 JP 6926012 B2 JP6926012 B2 JP 6926012B2 JP 2018024047 A JP2018024047 A JP 2018024047A JP 2018024047 A JP2018024047 A JP 2018024047A JP 6926012 B2 JP6926012 B2 JP 6926012B2
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Japan
Prior art keywords
conductive
region
electrode
semiconductor
conductive portion
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JP2018024047A
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Japanese (ja)
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JP2019140310A (ja
JP2019140310A5 (enExample
Inventor
紗矢 下村
紗矢 下村
研也 小林
研也 小林
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Priority to JP2018024047A priority Critical patent/JP6926012B2/ja
Priority to US16/033,371 priority patent/US10847648B2/en
Priority to CN201810762478.6A priority patent/CN110164971B/zh
Publication of JP2019140310A publication Critical patent/JP2019140310A/ja
Publication of JP2019140310A5 publication Critical patent/JP2019140310A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0295—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the source electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/143—VDMOS having built-in components the built-in components being PN junction diodes
    • H10D84/144—VDMOS having built-in components the built-in components being PN junction diodes in antiparallel diode configurations

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2018024047A 2018-02-14 2018-02-14 半導体装置 Active JP6926012B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018024047A JP6926012B2 (ja) 2018-02-14 2018-02-14 半導体装置
US16/033,371 US10847648B2 (en) 2018-02-14 2018-07-12 Semiconductor device
CN201810762478.6A CN110164971B (zh) 2018-02-14 2018-07-12 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018024047A JP6926012B2 (ja) 2018-02-14 2018-02-14 半導体装置

Publications (3)

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JP2019140310A JP2019140310A (ja) 2019-08-22
JP2019140310A5 JP2019140310A5 (enExample) 2020-03-26
JP6926012B2 true JP6926012B2 (ja) 2021-08-25

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JP2018024047A Active JP6926012B2 (ja) 2018-02-14 2018-02-14 半導体装置

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US (1) US10847648B2 (enExample)
JP (1) JP6926012B2 (enExample)
CN (1) CN110164971B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6864640B2 (ja) * 2018-03-19 2021-04-28 株式会社東芝 半導体装置及びその制御方法
JP7164497B2 (ja) * 2019-08-23 2022-11-01 株式会社東芝 半導体装置
CN111739936B (zh) * 2020-08-07 2020-11-27 中芯集成电路制造(绍兴)有限公司 一种半导体器件及其形成方法
JP7447769B2 (ja) * 2020-11-13 2024-03-12 三菱電機株式会社 半導体素子、半導体装置
JP7486407B2 (ja) * 2020-11-27 2024-05-17 三菱電機株式会社 半導体装置および半導体装置の製造方法
CN117121213A (zh) * 2021-03-26 2023-11-24 罗姆股份有限公司 半导体装置
JP7728216B6 (ja) * 2022-03-23 2025-09-19 株式会社東芝 半導体装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4830360B2 (ja) 2005-06-17 2011-12-07 株式会社デンソー 半導体装置およびその製造方法
JP2010010263A (ja) 2008-06-25 2010-01-14 Panasonic Corp 縦型半導体装置
JP5422930B2 (ja) 2008-06-30 2014-02-19 株式会社デンソー 半導体装置
US8022470B2 (en) * 2008-09-04 2011-09-20 Infineon Technologies Austria Ag Semiconductor device with a trench gate structure and method for the production thereof
WO2011111500A1 (ja) * 2010-03-09 2011-09-15 富士電機システムズ株式会社 半導体装置
JP5287835B2 (ja) * 2010-04-22 2013-09-11 株式会社デンソー 半導体装置
US8716746B2 (en) * 2010-08-17 2014-05-06 Denso Corporation Semiconductor device
JP6392133B2 (ja) * 2015-01-28 2018-09-19 株式会社東芝 半導体装置
JP6334438B2 (ja) * 2015-03-10 2018-05-30 株式会社東芝 半導体装置
JP6445952B2 (ja) * 2015-10-19 2018-12-26 株式会社東芝 半導体装置
US9530882B1 (en) * 2015-11-17 2016-12-27 Force Mos Technology Co., Ltd Trench MOSFET with shielded gate and diffused drift region
US20170317207A1 (en) * 2016-04-29 2017-11-02 Force Mos Technology Co., Ltd. Trench mosfet structure and layout with separated shielded gate
JP6677613B2 (ja) 2016-09-15 2020-04-08 株式会社東芝 半導体装置

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Publication number Publication date
JP2019140310A (ja) 2019-08-22
US20190252541A1 (en) 2019-08-15
US10847648B2 (en) 2020-11-24
CN110164971B (zh) 2022-08-12
CN110164971A (zh) 2019-08-23

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