JP6924648B2 - ホウ素含有ガスおよびフッ化水素ガスを使用した原子層エッチング - Google Patents

ホウ素含有ガスおよびフッ化水素ガスを使用した原子層エッチング Download PDF

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JP6924648B2
JP6924648B2 JP2017154337A JP2017154337A JP6924648B2 JP 6924648 B2 JP6924648 B2 JP 6924648B2 JP 2017154337 A JP2017154337 A JP 2017154337A JP 2017154337 A JP2017154337 A JP 2017154337A JP 6924648 B2 JP6924648 B2 JP 6924648B2
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boron
gas
substrate
oxide film
metal oxide
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JP2018026566A (ja
JP2018026566A5 (cg-RX-API-DMAC10.html
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ロバート　ディー．クラーク
ディー．クラーク ロバート
エヌ．タピリー カンダバラ
エヌ．タピリー カンダバラ
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C01B7/191—Hydrogen fluoride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/02—Boron; Borides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/06—Boron halogen compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
JP2017154337A 2016-08-10 2017-08-09 ホウ素含有ガスおよびフッ化水素ガスを使用した原子層エッチング Active JP6924648B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662373232P 2016-08-10 2016-08-10
US62/373,232 2016-08-10

Publications (3)

Publication Number Publication Date
JP2018026566A JP2018026566A (ja) 2018-02-15
JP2018026566A5 JP2018026566A5 (cg-RX-API-DMAC10.html) 2020-07-30
JP6924648B2 true JP6924648B2 (ja) 2021-08-25

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JP2017154337A Active JP6924648B2 (ja) 2016-08-10 2017-08-09 ホウ素含有ガスおよびフッ化水素ガスを使用した原子層エッチング

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US (2) US10283369B2 (cg-RX-API-DMAC10.html)
JP (1) JP6924648B2 (cg-RX-API-DMAC10.html)
KR (1) KR102510736B1 (cg-RX-API-DMAC10.html)
TW (1) TWI717544B (cg-RX-API-DMAC10.html)

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TWI828998B (zh) * 2018-09-13 2024-01-11 日商中央硝子股份有限公司 矽氧化物之蝕刻方法及蝕刻裝置
JP7336884B2 (ja) 2018-10-04 2023-09-01 東京エレクトロン株式会社 表面処理方法及び処理システム
US11387112B2 (en) 2018-10-04 2022-07-12 Tokyo Electron Limited Surface processing method and processing system
KR102448630B1 (ko) * 2019-02-25 2022-09-28 주식회사 아이큐랩 탄화 규소 반도체 공정에서 트렌치 형성 방법
KR102758592B1 (ko) * 2019-06-11 2025-01-23 어플라이드 머티어리얼스, 인코포레이티드 플루오린 및 금속 할로겐화물들을 사용한 금속 산화물들의 식각
CN111168056A (zh) * 2020-01-17 2020-05-19 宁波柔创纳米科技有限公司 一种金属粉末及降低金属粉末含氧量提升抗氧化性的方法
US12533726B2 (en) * 2020-02-18 2026-01-27 Forge Nano, Inc. Atomic layer deposition (ALD) for multi-layer ceramic capacitors (MLCCs)
CN115244666A (zh) 2020-03-06 2022-10-25 朗姆研究公司 钼的原子层蚀刻
JP7096279B2 (ja) * 2020-03-25 2022-07-05 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、プログラム、および基板処理方法
WO2022003803A1 (ja) * 2020-06-30 2022-01-06 株式会社日立ハイテク エッチング処理方法およびエッチング処理装置
JP7174016B2 (ja) 2020-07-16 2022-11-17 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
CN116210072B (zh) * 2020-09-01 2025-12-12 株式会社Adeka 蚀刻方法
US11488835B2 (en) * 2020-11-20 2022-11-01 Applied Materials, Inc. Systems and methods for tungsten-containing film removal
JP7621876B2 (ja) * 2021-01-26 2025-01-27 東京エレクトロン株式会社 基板処理方法、部品処理方法及び基板処理装置
US11462414B2 (en) * 2021-03-08 2022-10-04 Tokyo Electron Limited Atomic layer etching of metal oxides
JP2024510255A (ja) 2021-03-18 2024-03-06 ラム リサーチ コーポレーション インジウムガリウム亜鉛酸化物のエッチング
US11631589B2 (en) 2021-05-04 2023-04-18 Applied Materials, Inc. Metal etch in high aspect-ratio features
WO2023282191A1 (ja) 2021-07-05 2023-01-12 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US20240381790A1 (en) * 2021-09-07 2024-11-14 Lam Research Corporation Techniques and apparatuses for processing chalcogenides
TW202320149A (zh) * 2021-09-07 2023-05-16 美商蘭姆研究公司 使用三氯化硼的原子層蝕刻
KR102737901B1 (ko) * 2021-12-13 2024-12-04 한양대학교 에리카산학협력단 고유전율 박막의 원자층 식각 방법 및 원자층 식각 장치
KR102737905B1 (ko) * 2021-12-13 2024-12-04 한양대학교 에리카산학협력단 촉매 반응 기반 원자층 식각 방법
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JP7709946B2 (ja) * 2022-09-22 2025-07-17 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、プログラム、及び基板処理装置
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Publication number Publication date
US10283369B2 (en) 2019-05-07
TWI717544B (zh) 2021-02-01
US20190267249A1 (en) 2019-08-29
JP2018026566A (ja) 2018-02-15
US20180047577A1 (en) 2018-02-15
KR102510736B1 (ko) 2023-03-15
US10790156B2 (en) 2020-09-29
KR20180018413A (ko) 2018-02-21
TW201820459A (zh) 2018-06-01

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