TWI717544B - 使用含硼氣體與氟化氫氣體之原子層蝕刻 - Google Patents

使用含硼氣體與氟化氫氣體之原子層蝕刻 Download PDF

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Publication number
TWI717544B
TWI717544B TW106126861A TW106126861A TWI717544B TW I717544 B TWI717544 B TW I717544B TW 106126861 A TW106126861 A TW 106126861A TW 106126861 A TW106126861 A TW 106126861A TW I717544 B TWI717544 B TW I717544B
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Taiwan
Prior art keywords
boron
substrate
ale
gas
atomic layer
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TW106126861A
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English (en)
Chinese (zh)
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TW201820459A (zh
Inventor
羅伯特 Ｄ 克拉克
坎達巴拉 Ｎ 泰伯利
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日商東京威力科創股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C01B7/191—Hydrogen fluoride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/02—Boron; Borides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/06—Boron halogen compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
TW106126861A 2016-08-10 2017-08-09 使用含硼氣體與氟化氫氣體之原子層蝕刻 TWI717544B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662373232P 2016-08-10 2016-08-10
US62/373,232 2016-08-10

Publications (2)

Publication Number Publication Date
TW201820459A TW201820459A (zh) 2018-06-01
TWI717544B true TWI717544B (zh) 2021-02-01

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TW106126861A TWI717544B (zh) 2016-08-10 2017-08-09 使用含硼氣體與氟化氫氣體之原子層蝕刻

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Country Link
US (2) US10283369B2 (cg-RX-API-DMAC10.html)
JP (1) JP6924648B2 (cg-RX-API-DMAC10.html)
KR (1) KR102510736B1 (cg-RX-API-DMAC10.html)
TW (1) TWI717544B (cg-RX-API-DMAC10.html)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US10283369B2 (en) * 2016-08-10 2019-05-07 Tokyo Electron Limited Atomic layer etching using a boron-containing gas and hydrogen fluoride gas
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
JP6679642B2 (ja) * 2018-03-27 2020-04-15 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
TWI828998B (zh) * 2018-09-13 2024-01-11 日商中央硝子股份有限公司 矽氧化物之蝕刻方法及蝕刻裝置
JP7336884B2 (ja) 2018-10-04 2023-09-01 東京エレクトロン株式会社 表面処理方法及び処理システム
US11387112B2 (en) 2018-10-04 2022-07-12 Tokyo Electron Limited Surface processing method and processing system
KR102448630B1 (ko) * 2019-02-25 2022-09-28 주식회사 아이큐랩 탄화 규소 반도체 공정에서 트렌치 형성 방법
KR102758592B1 (ko) * 2019-06-11 2025-01-23 어플라이드 머티어리얼스, 인코포레이티드 플루오린 및 금속 할로겐화물들을 사용한 금속 산화물들의 식각
CN111168056A (zh) * 2020-01-17 2020-05-19 宁波柔创纳米科技有限公司 一种金属粉末及降低金属粉末含氧量提升抗氧化性的方法
US12533726B2 (en) * 2020-02-18 2026-01-27 Forge Nano, Inc. Atomic layer deposition (ALD) for multi-layer ceramic capacitors (MLCCs)
CN115244666A (zh) 2020-03-06 2022-10-25 朗姆研究公司 钼的原子层蚀刻
JP7096279B2 (ja) * 2020-03-25 2022-07-05 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、プログラム、および基板処理方法
WO2022003803A1 (ja) * 2020-06-30 2022-01-06 株式会社日立ハイテク エッチング処理方法およびエッチング処理装置
JP7174016B2 (ja) 2020-07-16 2022-11-17 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
CN116210072B (zh) * 2020-09-01 2025-12-12 株式会社Adeka 蚀刻方法
US11488835B2 (en) * 2020-11-20 2022-11-01 Applied Materials, Inc. Systems and methods for tungsten-containing film removal
JP7621876B2 (ja) * 2021-01-26 2025-01-27 東京エレクトロン株式会社 基板処理方法、部品処理方法及び基板処理装置
US11462414B2 (en) * 2021-03-08 2022-10-04 Tokyo Electron Limited Atomic layer etching of metal oxides
JP2024510255A (ja) 2021-03-18 2024-03-06 ラム リサーチ コーポレーション インジウムガリウム亜鉛酸化物のエッチング
US11631589B2 (en) 2021-05-04 2023-04-18 Applied Materials, Inc. Metal etch in high aspect-ratio features
WO2023282191A1 (ja) 2021-07-05 2023-01-12 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US20240381790A1 (en) * 2021-09-07 2024-11-14 Lam Research Corporation Techniques and apparatuses for processing chalcogenides
TW202320149A (zh) * 2021-09-07 2023-05-16 美商蘭姆研究公司 使用三氯化硼的原子層蝕刻
KR102737901B1 (ko) * 2021-12-13 2024-12-04 한양대학교 에리카산학협력단 고유전율 박막의 원자층 식각 방법 및 원자층 식각 장치
KR102737905B1 (ko) * 2021-12-13 2024-12-04 한양대학교 에리카산학협력단 촉매 반응 기반 원자층 식각 방법
US20250154658A1 (en) * 2022-02-22 2025-05-15 Lam Research Corporation Atomic layer etching using an inhibitor
WO2023214521A1 (ja) 2022-05-02 2023-11-09 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7709946B2 (ja) * 2022-09-22 2025-07-17 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、プログラム、及び基板処理装置
EP4651182A1 (en) * 2023-01-27 2025-11-19 Tokyo Electron Limited Substrate processing method and substrate processing system

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6331672B1 (en) * 1996-03-01 2001-12-18 Canon Kabushiki Kaisha Photovoltaic cell and method for manufacturing the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0368732B1 (en) * 1988-11-04 1995-06-28 Fujitsu Limited Process for forming resist mask pattern
US5041362A (en) * 1989-07-06 1991-08-20 Texas Instruments Incorporated Dry developable resist etch chemistry
US7012027B2 (en) * 2004-01-27 2006-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Zirconium oxide and hafnium oxide etching using halogen containing chemicals
JP5297615B2 (ja) * 2007-09-07 2013-09-25 株式会社日立ハイテクノロジーズ ドライエッチング方法
US20140179106A1 (en) * 2012-12-21 2014-06-26 Lam Research Corporation In-situ metal residue clean
US9773683B2 (en) * 2014-06-09 2017-09-26 American Air Liquide, Inc. Atomic layer or cyclic plasma etching chemistries and processes
US10381227B2 (en) * 2014-12-18 2019-08-13 The Regents Of The University Of Colorado, A Body Corporate Methods of atomic layer etching (ALE) using sequential, self-limiting thermal reactions
US9576811B2 (en) * 2015-01-12 2017-02-21 Lam Research Corporation Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
US9837304B2 (en) * 2015-06-24 2017-12-05 Tokyo Electron Limited Sidewall protection scheme for contact formation
US10283369B2 (en) * 2016-08-10 2019-05-07 Tokyo Electron Limited Atomic layer etching using a boron-containing gas and hydrogen fluoride gas

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6331672B1 (en) * 1996-03-01 2001-12-18 Canon Kabushiki Kaisha Photovoltaic cell and method for manufacturing the same

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US10283369B2 (en) 2019-05-07
US20190267249A1 (en) 2019-08-29
JP2018026566A (ja) 2018-02-15
JP6924648B2 (ja) 2021-08-25
US20180047577A1 (en) 2018-02-15
KR102510736B1 (ko) 2023-03-15
US10790156B2 (en) 2020-09-29
KR20180018413A (ko) 2018-02-21
TW201820459A (zh) 2018-06-01

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