JP2013506986A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2013506986A5 JP2013506986A5 JP2012531562A JP2012531562A JP2013506986A5 JP 2013506986 A5 JP2013506986 A5 JP 2013506986A5 JP 2012531562 A JP2012531562 A JP 2012531562A JP 2012531562 A JP2012531562 A JP 2012531562A JP 2013506986 A5 JP2013506986 A5 JP 2013506986A5
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing
- semiconductor device
- substrate
- oxygen plasma
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 claims 15
- 239000004065 semiconductor Substances 0.000 claims 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 12
- 229910052760 oxygen Inorganic materials 0.000 claims 12
- 239000001301 oxygen Substances 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 12
- 125000006850 spacer group Chemical group 0.000 claims 6
- 238000000034 method Methods 0.000 claims 4
- 125000004432 carbon atom Chemical group C* 0.000 claims 1
- 230000005284 excitation Effects 0.000 claims 1
- 125000001153 fluoro group Chemical group F* 0.000 claims 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/573,138 | 2009-10-04 | ||
| US12/573,138 US8497196B2 (en) | 2009-10-04 | 2009-10-04 | Semiconductor device, method for fabricating the same and apparatus for fabricating the same |
| PCT/JP2010/005926 WO2011040047A1 (en) | 2009-10-04 | 2010-10-02 | Semiconductor device, method for fabricating the same and apparatus for fabricating the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013506986A JP2013506986A (ja) | 2013-02-28 |
| JP2013506986A5 true JP2013506986A5 (cg-RX-API-DMAC10.html) | 2013-10-10 |
| JP5442871B2 JP5442871B2 (ja) | 2014-03-12 |
Family
ID=43822528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012531562A Active JP5442871B2 (ja) | 2009-10-04 | 2010-10-02 | 半導体デバイスの製造方法および半導体デバイスの製造装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8497196B2 (cg-RX-API-DMAC10.html) |
| JP (1) | JP5442871B2 (cg-RX-API-DMAC10.html) |
| KR (2) | KR20120049399A (cg-RX-API-DMAC10.html) |
| CN (1) | CN102549756B (cg-RX-API-DMAC10.html) |
| TW (1) | TWI423336B (cg-RX-API-DMAC10.html) |
| WO (1) | WO2011040047A1 (cg-RX-API-DMAC10.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170095887A (ko) * | 2014-12-24 | 2017-08-23 | 도쿄엘렉트론가부시키가이샤 | 도핑 방법, 도핑 장치 및 반도체 소자의 제조 방법 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07142447A (ja) * | 1993-11-16 | 1995-06-02 | Kawasaki Steel Corp | 半導体装置の製造方法 |
| JP3402937B2 (ja) | 1996-06-28 | 2003-05-06 | 三洋電機株式会社 | 半導体装置の製造方法 |
| JP3217280B2 (ja) | 1996-10-30 | 2001-10-09 | 松下電器産業株式会社 | ドライエッチング後処理方法とｍｏｓ型半導体装置の製造方法 |
| TW376551B (en) | 1996-08-07 | 1999-12-11 | Matsushita Electric Industrial Co Ltd | Aftertreatment method of dry etching and process of manufacturing semiconductor device |
| JP4048618B2 (ja) * | 1998-10-07 | 2008-02-20 | ソニー株式会社 | 半導体装置の製造方法 |
| US7223676B2 (en) * | 2002-06-05 | 2007-05-29 | Applied Materials, Inc. | Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer |
| KR100582481B1 (ko) | 2001-01-25 | 2006-05-23 | 동경 엘렉트론 주식회사 | 전자 디바이스 재료의 제조 방법 |
| US6534420B2 (en) * | 2001-07-18 | 2003-03-18 | Micron Technology, Inc. | Methods for forming dielectric materials and methods for forming semiconductor devices |
| CN100561684C (zh) * | 2002-03-29 | 2009-11-18 | 东京毅力科创株式会社 | 基底绝缘膜的形成方法 |
| TWI225668B (en) * | 2002-05-13 | 2004-12-21 | Tokyo Electron Ltd | Substrate processing method |
| JP2005051140A (ja) * | 2003-07-31 | 2005-02-24 | Toshiba Corp | 半導体装置およびその製造方法 |
| US6982196B2 (en) * | 2003-11-04 | 2006-01-03 | International Business Machines Corporation | Oxidation method for altering a film structure and CMOS transistor structure formed therewith |
| JP2006165335A (ja) * | 2004-12-08 | 2006-06-22 | Toshiba Corp | 半導体装置 |
| JP5084169B2 (ja) * | 2005-04-28 | 2012-11-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TWI408734B (zh) * | 2005-04-28 | 2013-09-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| JP5422854B2 (ja) | 2007-08-31 | 2014-02-19 | 国立大学法人東北大学 | 半導体装置の製造方法 |
| JP2008098640A (ja) * | 2007-10-09 | 2008-04-24 | Toshiba Corp | 半導体装置の製造方法 |
| WO2009099252A1 (ja) | 2008-02-08 | 2009-08-13 | Tokyo Electron Limited | 絶縁膜のプラズマ改質処理方法 |
-
2009
- 2009-10-04 US US12/573,138 patent/US8497196B2/en active Active
-
2010
- 2010-10-01 TW TW099133451A patent/TWI423336B/zh active
- 2010-10-02 KR KR1020127008779A patent/KR20120049399A/ko not_active Ceased
- 2010-10-02 CN CN201080044368.8A patent/CN102549756B/zh active Active
- 2010-10-02 WO PCT/JP2010/005926 patent/WO2011040047A1/en not_active Ceased
- 2010-10-02 JP JP2012531562A patent/JP5442871B2/ja active Active
- 2010-10-02 KR KR1020147001310A patent/KR101384590B1/ko active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9443701B2 (en) | Etching method | |
| TW202217444A (zh) | 光阻之乾式顯影製程 | |
| US9911622B2 (en) | Method of processing target object | |
| US9911607B2 (en) | Method of processing target object | |
| JP2013046070A5 (cg-RX-API-DMAC10.html) | ||
| JP2007088454A5 (cg-RX-API-DMAC10.html) | ||
| JP6550278B2 (ja) | エッチング方法 | |
| JP5783890B2 (ja) | プラズマ処理方法 | |
| US10707088B2 (en) | Method of processing target object | |
| JP5703315B2 (ja) | ラジカルエッチング方法 | |
| CN109219866A (zh) | 蚀刻方法 | |
| JP2010500758A (ja) | エッチング処理を実行する前のマスク層処理方法 | |
| JP2015065393A5 (cg-RX-API-DMAC10.html) | ||
| JP2021184505A (ja) | 基板処理システム及び基板処理方法 | |
| JP2015529011A5 (cg-RX-API-DMAC10.html) | ||
| WO2015172505A1 (zh) | 一种离子注入的方法 | |
| JP5642427B2 (ja) | プラズマ処理方法 | |
| Brihoum et al. | Revisiting the mechanisms involved in Line Width Roughness smoothing of 193 nm photoresist patterns during HBr plasma treatment | |
| Choi et al. | Highly anisotropic etching of Ta thin films using high density plasmas of halogen based gases | |
| US20120094499A1 (en) | Method of performing an in situ chamber clean | |
| CN102543686A (zh) | 半导体衬底聚酰亚胺工艺 | |
| JP2012068579A (ja) | フォトマスクのクリーニング方法及びフォトマスクのクリーニング装置 | |
| Li et al. | Selective etching of ruthenium using electron beam-irradiation and Ar/O2/CF4 remote plasma-based surface functionalization: Comparisons to tantalum | |
| JP2010062212A (ja) | 半導体装置の製造方法 | |
| JP5093854B2 (ja) | エッチング方法 |