JP2018026566A5 - - Google Patents
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- Publication number
- JP2018026566A5 JP2018026566A5 JP2017154337A JP2017154337A JP2018026566A5 JP 2018026566 A5 JP2018026566 A5 JP 2018026566A5 JP 2017154337 A JP2017154337 A JP 2017154337A JP 2017154337 A JP2017154337 A JP 2017154337A JP 2018026566 A5 JP2018026566 A5 JP 2018026566A5
- Authority
- JP
- Japan
- Prior art keywords
- boron
- gas
- metal oxide
- substrate
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000000034 method Methods 0.000 claims 22
- 239000007789 gas Substances 0.000 claims 20
- 229910052796 boron Inorganic materials 0.000 claims 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 12
- 229910044991 metal oxide Inorganic materials 0.000 claims 12
- 150000004706 metal oxides Chemical class 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 11
- 239000002344 surface layer Substances 0.000 claims 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 7
- 239000010410 layer Substances 0.000 claims 5
- 238000005530 etching Methods 0.000 claims 4
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 2
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims 2
- 239000011261 inert gas Substances 0.000 claims 2
- 238000010926 purge Methods 0.000 claims 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- -1 boron halide Chemical class 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000003672 processing method Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662373232P | 2016-08-10 | 2016-08-10 | |
| US62/373,232 | 2016-08-10 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018026566A JP2018026566A (ja) | 2018-02-15 |
| JP2018026566A5 true JP2018026566A5 (cg-RX-API-DMAC10.html) | 2020-07-30 |
| JP6924648B2 JP6924648B2 (ja) | 2021-08-25 |
Family
ID=61159322
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017154337A Active JP6924648B2 (ja) | 2016-08-10 | 2017-08-09 | ホウ素含有ガスおよびフッ化水素ガスを使用した原子層エッチング |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US10283369B2 (cg-RX-API-DMAC10.html) |
| JP (1) | JP6924648B2 (cg-RX-API-DMAC10.html) |
| KR (1) | KR102510736B1 (cg-RX-API-DMAC10.html) |
| TW (1) | TWI717544B (cg-RX-API-DMAC10.html) |
Families Citing this family (30)
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| US12444651B2 (en) | 2009-08-04 | 2025-10-14 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| US10283369B2 (en) * | 2016-08-10 | 2019-05-07 | Tokyo Electron Limited | Atomic layer etching using a boron-containing gas and hydrogen fluoride gas |
| US10566212B2 (en) | 2016-12-19 | 2020-02-18 | Lam Research Corporation | Designer atomic layer etching |
| JP6679642B2 (ja) * | 2018-03-27 | 2020-04-15 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
| TWI828998B (zh) * | 2018-09-13 | 2024-01-11 | 日商中央硝子股份有限公司 | 矽氧化物之蝕刻方法及蝕刻裝置 |
| JP7336884B2 (ja) | 2018-10-04 | 2023-09-01 | 東京エレクトロン株式会社 | 表面処理方法及び処理システム |
| US11387112B2 (en) | 2018-10-04 | 2022-07-12 | Tokyo Electron Limited | Surface processing method and processing system |
| KR102448630B1 (ko) * | 2019-02-25 | 2022-09-28 | 주식회사 아이큐랩 | 탄화 규소 반도체 공정에서 트렌치 형성 방법 |
| KR102758592B1 (ko) * | 2019-06-11 | 2025-01-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 플루오린 및 금속 할로겐화물들을 사용한 금속 산화물들의 식각 |
| CN111168056A (zh) * | 2020-01-17 | 2020-05-19 | 宁波柔创纳米科技有限公司 | 一种金属粉末及降低金属粉末含氧量提升抗氧化性的方法 |
| US12533726B2 (en) * | 2020-02-18 | 2026-01-27 | Forge Nano, Inc. | Atomic layer deposition (ALD) for multi-layer ceramic capacitors (MLCCs) |
| CN115244666A (zh) | 2020-03-06 | 2022-10-25 | 朗姆研究公司 | 钼的原子层蚀刻 |
| JP7096279B2 (ja) * | 2020-03-25 | 2022-07-05 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、プログラム、および基板処理方法 |
| WO2022003803A1 (ja) * | 2020-06-30 | 2022-01-06 | 株式会社日立ハイテク | エッチング処理方法およびエッチング処理装置 |
| JP7174016B2 (ja) | 2020-07-16 | 2022-11-17 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
| CN116210072B (zh) * | 2020-09-01 | 2025-12-12 | 株式会社Adeka | 蚀刻方法 |
| US11488835B2 (en) * | 2020-11-20 | 2022-11-01 | Applied Materials, Inc. | Systems and methods for tungsten-containing film removal |
| JP7621876B2 (ja) * | 2021-01-26 | 2025-01-27 | 東京エレクトロン株式会社 | 基板処理方法、部品処理方法及び基板処理装置 |
| US11462414B2 (en) * | 2021-03-08 | 2022-10-04 | Tokyo Electron Limited | Atomic layer etching of metal oxides |
| JP2024510255A (ja) | 2021-03-18 | 2024-03-06 | ラム リサーチ コーポレーション | インジウムガリウム亜鉛酸化物のエッチング |
| US11631589B2 (en) | 2021-05-04 | 2023-04-18 | Applied Materials, Inc. | Metal etch in high aspect-ratio features |
| WO2023282191A1 (ja) | 2021-07-05 | 2023-01-12 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| US20240381790A1 (en) * | 2021-09-07 | 2024-11-14 | Lam Research Corporation | Techniques and apparatuses for processing chalcogenides |
| TW202320149A (zh) * | 2021-09-07 | 2023-05-16 | 美商蘭姆研究公司 | 使用三氯化硼的原子層蝕刻 |
| KR102737901B1 (ko) * | 2021-12-13 | 2024-12-04 | 한양대학교 에리카산학협력단 | 고유전율 박막의 원자층 식각 방법 및 원자층 식각 장치 |
| KR102737905B1 (ko) * | 2021-12-13 | 2024-12-04 | 한양대학교 에리카산학협력단 | 촉매 반응 기반 원자층 식각 방법 |
| US20250154658A1 (en) * | 2022-02-22 | 2025-05-15 | Lam Research Corporation | Atomic layer etching using an inhibitor |
| WO2023214521A1 (ja) | 2022-05-02 | 2023-11-09 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| JP7709946B2 (ja) * | 2022-09-22 | 2025-07-17 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、プログラム、及び基板処理装置 |
| EP4651182A1 (en) * | 2023-01-27 | 2025-11-19 | Tokyo Electron Limited | Substrate processing method and substrate processing system |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0368732B1 (en) * | 1988-11-04 | 1995-06-28 | Fujitsu Limited | Process for forming resist mask pattern |
| US5041362A (en) * | 1989-07-06 | 1991-08-20 | Texas Instruments Incorporated | Dry developable resist etch chemistry |
| JP2984595B2 (ja) * | 1996-03-01 | 1999-11-29 | キヤノン株式会社 | 光起電力素子 |
| US7012027B2 (en) * | 2004-01-27 | 2006-03-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Zirconium oxide and hafnium oxide etching using halogen containing chemicals |
| JP5297615B2 (ja) * | 2007-09-07 | 2013-09-25 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法 |
| US20140179106A1 (en) * | 2012-12-21 | 2014-06-26 | Lam Research Corporation | In-situ metal residue clean |
| US9773683B2 (en) * | 2014-06-09 | 2017-09-26 | American Air Liquide, Inc. | Atomic layer or cyclic plasma etching chemistries and processes |
| US10381227B2 (en) * | 2014-12-18 | 2019-08-13 | The Regents Of The University Of Colorado, A Body Corporate | Methods of atomic layer etching (ALE) using sequential, self-limiting thermal reactions |
| US9576811B2 (en) * | 2015-01-12 | 2017-02-21 | Lam Research Corporation | Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch) |
| US9837304B2 (en) * | 2015-06-24 | 2017-12-05 | Tokyo Electron Limited | Sidewall protection scheme for contact formation |
| US10283369B2 (en) * | 2016-08-10 | 2019-05-07 | Tokyo Electron Limited | Atomic layer etching using a boron-containing gas and hydrogen fluoride gas |
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2017
- 2017-08-08 US US15/671,404 patent/US10283369B2/en active Active
- 2017-08-09 TW TW106126861A patent/TWI717544B/zh active
- 2017-08-09 JP JP2017154337A patent/JP6924648B2/ja active Active
- 2017-08-10 KR KR1020170101457A patent/KR102510736B1/ko active Active
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2019
- 2019-05-07 US US16/405,462 patent/US10790156B2/en active Active